# Zener Single Diode, 12 V, 1 W, SOT-89, 3 Pins, 150 °C, Surface Mount

![Product image](https://novapart.co/image/farnell:1757819/)

**URL**: https://novapart.co/products/BZV49-C12,115/zener-single-diode-12-v-1-w-sot-89-3-pins-150-c
**SKU**: BZV49-C12,115
**Manufacturer**: NEXPERIA
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Zener Single Diodes
**Price**: €0.4990
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Zener Voltage Vz Typ:12V; Power Dissipation Pd:1W; Diode Case Style:SOT-89; Zener Tolerance ±:5%; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BZV49 Series; Automotive Q

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | BZV49 |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOT-89 |
| Power Dissipation | 1W |
| Zener Voltage Nom | 12V |
| Operating Temperature Max | 150°C |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1757819/)

## _**DISCRETE SEMICONDUCTORS**_ 

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DATA SHEET<br>**----- End of picture text -----**<br>


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book, halfpage<br>M3D109<br>**----- End of picture text -----**<br>


## **BZV49 series** Voltage regulator diodes 

Product data sheet 2005 Feb 03 Supersedes data of 1999 May 11 

**==> picture [249 x 119] intentionally omitted <==**

**NXP Semiconductors** 

**Product data sheet** 

## **Voltage regulator diodes** 

## **BZV49 series** 

## **FEATURES** 

- Total power dissipation: max. 1 W 

- Tolerance series: approx. ±5% 

- Working voltage range: nom. 2.4 to 75 V (E24 range) 

- Non-repetitive peak reverse power dissipation: max. 40 W. 

## **PINNING** 

|**PINNING**||
|---|---|
|**PIN**|**DESCRIPTION**|
|1|anode|
|2|cathode|
|3|anode|



## **APPLICATIONS** 

- General regulation functions. 

## **DESCRIPTION** 

Medium-power voltage regulator diodes in a SOT89 plastic SMD package. 

The diodes are available in the normalized E24 approx. ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZV49-C2V4 to BZV49-C75). 

**==> picture [164 x 84] intentionally omitted <==**

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1 3<br>2<br>3 2 1 sym096<br>**----- End of picture text -----**<br>


Fig.1  Simplified outline (SOT89) and symbol. 

## **ORDERING INFORMATION** 

|**TYPE NUMBER**|**PACKAGE**|**PACKAGE**|**PACKAGE**|
|---|---|---|---|
||**NAME**|**DESCRIPTION**|**VERSION**|
|BZV49-C2V4 to<br>BZV49-C75<br>note 1|SC-62|plastic surface mounted package; collector pad for good heat<br>transfer; 3 leads|SOT89|



## **Note** 

1. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (E24 range). 

## **MARKING** 

|**MARKING**||||||||
|---|---|---|---|---|---|---|---|
|**TYPE**<br>**NUMBER**|**MARKING**<br>**CODE**|**TYPE**<br>**NUMBER**|**MARKING**<br>**CODE**|**TYPE**<br>**NUMBER**|**MARKING**<br>**CODE**|**TYPE**<br>**NUMBER**|**MARKING**<br>**CODE**|
|BZV49-C2V4|2Y4|BZV49-C6V2|6Y2|BZV49-C16|16Y|BZV49-C43|43Y|
|BZV49-C2V7|2Y7|BZV49-C6V8|6Y8|BZV49-C18|18Y|BZV49-C47|47Y|
|BZV49-C3V0|3Y0|BZV49-C7V5|7Y5|BZV49-C20|20Y|BZV49-C51|51Y|
|BZV49-C3Y3|3Y3|BZV49-C8V2|8Y2|BZV49-C22|22Y|BZV49-C56|56Y|
|BZV49-C3V6|3Y6|BZV49-C9V1|9Y1|BZV49-C24|24Y|BZV49-C62|62Y|
|BZV49-C3V9|3Y9|BZV49-C10|10Y|BZV49-C27|27Y|BZV49-C68|68Y|
|BZV49-C4V3|4Y3|BZV49-C11|11Y|BZV49-C30|30Y|BZV49-C75|75Y|
|BZV49-C4V7|4Y7|BZV49-C12|12Y|BZV49-C33|33Y|−|−|
|BZV49-C5V1|5Y1|BZV49-C13|13Y|BZV49-C36|36Y|−|−|
|BZV49-C5V6|5Y6|BZV49-C15|15Y|BZV49-C39|39Y|−|−|



2005 Feb 03 

2 

NXP Semiconductors 

Product data sheet 

## Voltage regulator diodes 

## BZV49 series 

## **LIMITING VALUES** 

In accordance with the Absolute Maximum Rating System (IEC 60134). 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|IF|continuous forward current||−|250|mA|
|IZSM|non-repetitive peak reverse current|tp= 100μs; square wave;<br>Tj= 25°Cprior to surge|see Table<br>“Per type”|||
|Ptot|totalpower dissipation|Tamb= 25°C; note 1|−|1|W|
|PZSM|non-repetitive peak reverse power<br>dissipation|tp= 100μs; square wave;<br>Tj= 25°Cprior to surge; see Fig.2|−|40|W|
|Tstg|storage temperature||−65|+150|°C|
|Tj|junction temperature||−|150|°C|



## **Note** 

1. Device mounted on a ceramic substrate; area = 2.5 cm[2] ; thickness = 0.7 mm. 

## **ELECTRICAL CHARACTERISTICS** 

## **Total series** 

Tamb = 25 °C unless otherwise specified. 

|Tamb= 25°C|unless otherwise specified.||||
|---|---|---|---|---|
|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MAX.**|**UNIT**|
|VF|forward voltage|IF= 50 mA; see Fig.3|1|V|



2005 Feb 03 

3 

## **Per type** 

Tj = 25 °C unless otherwise specified. 

|**BZV49-**<br>**CXXX**|**WORKING**<br>**VOLTAGE**<br>**VZ (V)**<br>**at IZtest**|**WORKING**<br>**VOLTAGE**<br>**VZ (V)**<br>**at IZtest**|**DIFFERENTIAL**<br>**RESISTANCE**<br>**rdif (**Ω**)**<br>**at IZtest**|**DIFFERENTIAL**<br>**RESISTANCE**<br>**rdif (**Ω**)**<br>**at IZtest**|**TEMP. COEFF.**<br>**SZ (mV/K)**<br>**at IZtest**<br>see Figs 4 and 5|**TEMP. COEFF.**<br>**SZ (mV/K)**<br>**at IZtest**<br>see Figs 4 and 5|**TEMP. COEFF.**<br>**SZ (mV/K)**<br>**at IZtest**<br>see Figs 4 and 5|**TEST**<br>**CURRENT**<br>**IZtest (mA)**|**DIODE CAP.**<br>**Cd (pF)**<br>**at f = 1 MHz;**<br>**at VR = 0 V**|**REVERSE**<br>**CURRENT at**<br>**REVERSE**<br>**VOLTAGE**|**REVERSE**<br>**CURRENT at**<br>**REVERSE**<br>**VOLTAGE**|**NON-REPETITIVE PEAK**<br>**REVERSE CURRENT**<br>**IZSM (A)**<br>**at tp = 100**μ**s;**<br>**Tamb = 25**°**C**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||**IR (**μ**A)**|**VR**<br>**(V)**||
||**MIN.**|**MAX.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**||**MAX.**|**MAX.**||**MAX.**|
|2V4|2.2|2.6|70|100|−3.5|−1.6|0|5|450|50|1.0|6.0|
|2V7|2.5|2.9|75|100|−3.5|−2.0|0|5|450|20|1.0|6.0|
|3V0|2.8|3.2|80|95|−3.5|−2.1|0|5|450|10|1.0|6.0|
|3V3|3.1|3.5|85|95|−3.5|−2.4|0|5|450|5|1.0|6.0|
|3V6|3.4|3.8|85|90|−3.5|−2.4|0|5|450|5|1.0|6.0|
|3V9|3.7|4.1|85|90|−3.5|−2.5|0|5|450|3|1.0|6.0|
|4V3|4.0|4.6|80|90|−3.5|−2.5|0|5|450|3|1.0|6.0|
|4V7|4.4|5.0|50|80|−3.5|−1.4|+0.2|5|300|3|2.0|6.0|
|5V1|4.8|5.4|40|60|−2.7|−0.8|+1.2|5|300|2|2.0|6.0|
|5V6|5.2|6.0|15|40|−2.0|+1.2|+2.5|5|300|1|2.0|6.0|
|6V2|5.8|6.6|6|10|0.4|2.3|3.7|5|200|3|4.0|6.0|
|6V8|6.4|7.2|6|15|1.2|3.0|4.5|5|200|2|4.0|6.0|
|7V5|7.0|7.9|6|15|2.5|4.0|5.3|5|150|1|5.0|4.0|
|8V2|7.7|8.7|6|15|3.2|4.6|6.2|5|150|0.7|5.0|4.0|
|9V1|8.5|9.6|6|15|3.8|5.5|7.0|5|150|0.5|6.0|3.0|
|10|9.4|10.6|8|20|4.5|6.4|8.0|5|90|0.2|7.0|3.0|
|11|10.4|11.6|10|20|5.4|7.4|9.0|5|85|0.1|8.0|2.5|
|12|11.4|12.7|10|25|6.0|8.4|10.0|5|85|0.1|8.0|2.5|
|13|12.4|14.1|10|30|7.0|9.4|11.0|5|80|0.1|8.0|2.5|
|15|13.8|15.6|10|30|9.2|11.4|13.0|5|75|0.05|10.5|2.0|
|16|15.3|17.1|10|40|10.4|12.4|14.0|5|75|0.05|11.2|1.5|
|18|16.8|19.1|10|45|12.4|14.4|16.0|5|70|0.05|12.6|1.5|
|20|18.8|21.2|15|55|14.4|16.4|18.0|5|60|0.05|14.0|1.5|
|22|20.8|23.3|20|55|16.4|18.4|20.0|5|60|0.05|15.4|1.25|
|24|22.8|25.6|25|70|18.4|20.4|22.0|5|55|0.05|16.8|1.25|



|**BZV49-**<br>**CXXX**|**WORKING**<br>**VOLTAGE**<br>**VZ (V)**<br>**at IZtest**|**WORKING**<br>**VOLTAGE**<br>**VZ (V)**<br>**at IZtest**|**DIFFERENTIAL**<br>**RESISTANCE**<br>**rdif (**Ω**)**<br>**at IZtest**|**DIFFERENTIAL**<br>**RESISTANCE**<br>**rdif (**Ω**)**<br>**at IZtest**|**TEMP. COEFF.**<br>**SZ (mV/K)**<br>**at IZtest**<br>see Figs 4 and 5|**TEMP. COEFF.**<br>**SZ (mV/K)**<br>**at IZtest**<br>see Figs 4 and 5|**TEMP. COEFF.**<br>**SZ (mV/K)**<br>**at IZtest**<br>see Figs 4 and 5|**TEST**<br>**CURRENT**<br>**IZtest (mA)**|**DIODE CAP.**<br>**Cd (pF)**<br>**at f = 1 MHz;**<br>**at VR = 0 V**|**REVERSE**<br>**CURRENT at**<br>**REVERSE**<br>**VOLTAGE**|**REVERSE**<br>**CURRENT at**<br>**REVERSE**<br>**VOLTAGE**|**NON-REPETITIVE PEAK**<br>**REVERSE CURRENT**<br>**IZSM (A)**<br>**at tp = 100**μ**s;**<br>**Tamb = 25**°**C**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||**IR (**μ**A)**|**VR**<br>**(V)**||
||**MIN.**|**MAX.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**||**MAX.**|**MAX.**||**MAX.**|
|27|25.1|28.9|25|80|21.4|23.4|25.3|2|50|0.05|18.9|1.0|
|30|28.0|32.0|30|80|24.4|26.6|29.4|2|50|0.05|21.0|1.0|
|33|31.0|35.0|35|80|27.4|29.7|33.4|2|45|0.05|23.1|0.9|
|36|34.0|38.0|35|90|30.4|33.0|37.4|2|45|0.05|25.2|0.8|
|39|37.0|41.0|40|130|33.4|36.4|41.2|2|45|0.05|27.3|0.7|
|43|40.0|46.0|45|150|37.6|41.2|46.6|2|40|0.05|30.1|0.6|
|47|44.0|50.0|50|170|42.0|46.1|51.8|2|40|0.05|32.9|0.5|
|51|48.0|54.0|60|180|46.6|51.0|57.2|2|40|0.05|35.7|0.4|
|56|52.0|60.0|70|200|52.2|57.0|63.8|2|40|0.05|39.2|0.3|
|62|58.0|66.0|80|215|58.8|64.4|71.6|2|35|0.05|43.4|0.3|
|68|64.0|72.0|90|240|65.6|71.7|79.8|2|35|0.05|47.6|0.25|
|75|70.0|79.0|95|255|73.4|80.2|88.6|2|35|0.05|52.5|0.2|



NXP Semiconductors 

Product data sheet 

## Voltage regulator diodes 

## BZV49 series 

## **THERMAL CHARACTERISTICS** 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|---|---|---|---|---|
|Rth(j-tp)|thermal resistance fromjunction to tie-point||15|K/W|
|Rth(j-a)|thermal resistance fromjunction to ambient|note 1|125|K/W|



## **Note** 

1. Device mounted on a ceramic substrate; area = 2.5 cm[2] ; thickness = 0.7 mm. 

## **GRAPHICAL DATA** 

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MBG801<br>10 [3]<br>handbook, halfpage<br>PZSM<br>(W)<br>10 [2]<br>(1)<br>10<br>(2)<br>1<br>10 [−] [1] 1 duration (ms) 10<br>(1) Tj = 25 °C (prior to surge).<br>(2) Tj = 150 °C (prior to surge).<br>Fig.2 Maximum permissible non-repetitive peak<br>reverse power dissipation versus duration.<br>**----- End of picture text -----**<br>


**==> picture [242 x 289] intentionally omitted <==**

**----- Start of picture text -----**<br>
MBG781<br>300<br>handbook, halfpage<br>IF<br>(mA)<br>200<br>100<br>0<br>0.6 0.8 VF (V) 1<br>Tj = 25 °C.<br>Fig.3 Forward current as a function of forward<br>voltage; typical values.<br>**----- End of picture text -----**<br>


2005 Feb 03 

6 

NXP Semiconductors 

Product data sheet 

## Voltage regulator diodes 

## BZV49 series 

**==> picture [497 x 306] intentionally omitted <==**

**----- Start of picture text -----**<br>
MBG927<br>1<br>handbook, full pagewidth<br>SZ 4V3<br>(mV/K) 3V9<br>0 3V6<br>3V3<br>− 1<br>3V0<br>− 2<br>2V7<br>2V4<br>− 3<br>10 [-] [3] 10 [-] [2] 10 [-] [1] 1<br>IZ (A)<br>BZV49-C2V4 to C4V3.<br>Tj = 25 to 150 °C.<br>Fig.4  Temperature coefficient as a function of working current; typical values.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
MBG924<br>10<br>handbook, halfpage<br>SZ<br>(mV/K)<br>10<br>9V1<br>5<br>8V2<br>7V5<br>6V8<br>6V2<br>5V6<br>5V1<br>0<br>4V7<br>− 5<br>0 4 8 12 16 20<br>IZ (mA)<br>BZV49-C4V7 to C10.<br>Tj = 25 to 150 °C.j = 25 to 150 °C. = 25 to 150 °C.°C.C.<br>Fig.5 Temperature coefficient as a function of<br>working current; typical values.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
MBG924<br>10<br>handbook, halfpage<br>SZ<br>(mV/K)<br>10<br>9V1<br>5<br>8V2<br>7V5<br>6V8<br>6V2<br>5V6<br>5V1<br>0<br>4V7<br>− 5<br>0 4 8 12 16 20<br>IZ (mA)<br>BZV49-C4V7 to C10.<br>Tj = 25 to 150 °C.j = 25 to 150 °C. = 25 to 150 °C.°C.C.<br>Fig.5 Temperature coefficient as a function of<br>working current; typical values.<br>**----- End of picture text -----**<br>


2005 Feb 03 

7 

NXP Semiconductors 

Product data sheet 

## Voltage regulator diodes 

## BZV49 series 

## **PACKAGE OUTLINE** 

**==> picture [481 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89<br>D B<br>A<br>bp3<br>E<br>HE<br>Lp<br>1 2 3<br>bp2 c<br>w M bp1<br>e1<br>e<br>0 2 4 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w<br>1.6 0.48 0.53 1.8 0.44 4.6 2.6 4.25 1.2<br>mm 3.0 1.5 0.13<br>1.4 0.35 0.40 1.4 0.23 4.4 2.4 3.75 0.8<br>OUTLINE  REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  JEITA PROJECTION<br>04-08-03<br> SOT89 TO-243 SC-62<br>06-03-16<br>**----- End of picture text -----**<br>


2005 Feb 03 

8 

NXP Semiconductors 

Product data sheet 

## Voltage regulator diodes 

## BZV49 series 

## **DATA SHEET STATUS** 

|**DATA SHEET STATUS**|||
|---|---|---|
|**DOCUMENT**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)|**DEFINITION**|
|Objective data sheet|Development|This document contains data from the objective specification for product<br>development.|
|Preliminarydata sheet|Qualification|This document contains data from thepreliminaryspecification.|
|Product data sheet|Production|This document contains theproduct specification.|



## **Notes** 

1. Please consult the most recently issued document before initiating or completing a design. 

2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 

## **DISCLAIMERS** 

**General** ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 

**Right to make changes** ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 

**Suitability for use** ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 

⎯ **Applications** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Terms and conditions of sale** ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. 

**No offer to sell or license** ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 

⎯ **Export control** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 

**Quick reference data** ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 

⎯ **Limiting values** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 

2005 Feb 03 

9 

## _**NXP Semiconductors**_ 

## **Customer notification** 

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. 

## **Contact information** 

For additional information please visit: **http://www.nxp.com** For sales offices addresses send e-mail to: **salesaddresses@nxp.com** 

## © NXP B.V. 2009 

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 

Printed in The Netherlands 

**==> picture [178 x 143] intentionally omitted <==**

R76/04/pp10 

Date of release: 2005 Feb 03 Document order number: 9397 750 13926 



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- [Supplier page](https://es.farnell.com/nexperia/bzv49-c12-115/diode-zener-1w-12v-sot89/dp/1757819)
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