# Fast / Ultrafast Diode, 200 V, 8 A, Single, 1.25 V, 35 ns, 100 A ![Product image](https://novapart.co/image/farnell:2101175/) **URL**: https://novapart.co/products/BYW80-200G/fast-ultrafast-diode-200-v-8-a-single-125-35-ns **SKU**: BYW80-200G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes **Price**: €0.5350 **Stock**: 1000+ **Lead Time**: 78 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):8A; Diode Configuration:Single; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:35ns; Forward Surge Curren ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 2 Pin | | Product Range | BYW80 | | Qualification | - | | Diode Case Style | TO-220B | | Diode Configuration | Single | | Forward Voltage Max | 1.25V | | Forward Surge Current | 100A | | Reverse Recovery Time | 35ns | | Average Forward Current | 8A | | Operating Temperature Max | 175°C | | Repetitive Peak Reverse Voltage | 200V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2101175/) ## **ON Semiconductor** ## **Is Now** **==> picture [390 x 69] intentionally omitted <==** **To learn more about onsemi™, please visit our website at www.onsemi.com** **onsemi** and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. BYW80-200 ## SWITCHMODE Power Rectifiers This state−of−the−art device is designed for use in switching power supplies, inverters and as free wheeling diodes. ## **Features** ## **http://onsemi.com** - Ultrafast 35 Nanosecond Recovery Time - 175°C Operating Junction Temperature - Popular TO−220 Package **ULTRAFAST RECTIFIERS 8.0 AMPERES, 200 VOLTS** - Epoxy Meets UL 94 V−0 @ 0.125 in - Low Forward Voltage • Low Leakage Current 1 4 • High Temperature Glass Passivated Junction 3 • Pb−Free Package is Available* **Mechanical Characteristics** ~~aa~~ • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) 4 **MARKING DIAGRAM** • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable q • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds **CASE 221B** AY WWG **MAXIMUM RATINGS TO−220B** BYW80-200 1 **Rating Symbol Values Unit** 3 **PLASTIC** KA Peak Repetitive Reverse Voltage VRRM 200 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) 8.0 A Total Device, (Rated VR), TC = 150 ° C A = Assembly Location Peak Repetitive Forward Current IFM 16 A Y = Year (Rated VR, Square Wave, 20 kHz), WW = Work Week TC = 150 ° C BYW80−200 = Device Code G = Pb−Free Package Nonrepetitive Peak Surge Current IFSM 100 A KA = Diode Polarity (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature and TJ, Tstg −65 to +175 ° C **ORDERING INFORMATION** ~~=~~ Storage Temperature Range **Device Package Shipping** Stresses exceeding Maximum Ratings may damage the device. Maximum BYW80−200 TO−220 50 Units/Rail Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the BYW80−200G TO−220 50 Units/Rail Recommended Operating Conditions may affect device reliability. (Pb−Free) ~~TS~~ - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2008 **June, 2008 − Rev. 3** **BYW80/D** **BYW80−200** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Values**|**Unit**| |Maximum Thermal Resistance, Junction−to−Case|R�JC|3.0|°C/W| |**ELECTRICAL CHARACTERISTICS**|||| |Maximum Instantaneous Forward Voltage (Note 1)
(iF= 7.0 Amps, TC= 100°C)
(iF= 22 Amps, TC= 25°C)|vF|0.85
1.25|V| |Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ= 100°C)
(Rated dc Voltage, TJ= 25°C)|iR|1
0.01|mA| |Maximum Reverse Recovery Time
(IF= 1.0 Amp, di/dt = 50 Amps/�s)
(IF= 0.5 Amp, iR= 1.0 Amp, IREC= 0.25 Amp)|trr|35
25|ns| 1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. **==> picture [491 x 401] intentionally omitted <==** **----- Start of picture text -----**
100 1000
70
100 TJ = 175°C
50
10
100°C
30
20 1.0 25°C
0.1
10
7.0 0.01
0 20 40 60 80 100 120 140 160 180 200
5.0 VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
3.0 * The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
2.0 estimated from these same curves if VR is sufficiently below rated VR.
TJ = 175°C 100°C 25°C 10
1.0 9.0 RATED VR APPLIED
8.0 dc
0.7
7.0
0.5 6.0
SQUARE WAVE
5.0
0.3 4.0
3.0
0.2
2.0
1.0
0.1 0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 140 150 160 170 180
vF, INSTANTANEOUS VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)
�
, REVERSE CURRENT ( A)
IR
, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF
, AVERAGE FORWARD CURRENT (AMPS)
IF(AV)
**----- End of picture text -----**
**Figure 1. Typical Forward Voltage** **Figure 3. Current Derating, Case** **http://onsemi.com** **2** **BYW80−200** **==> picture [492 x 390] intentionally omitted <==** **----- Start of picture text -----**
14 10
12 RR � � JAJA = 16 = 60°°C/WC/W 9.0 T J = 175°C
dc (NO HEAT SINK) 8.0
10 7.0
SQUARE WAVE
8.0 SQUARE WAVE 6.0 dc
5.0
6.0
4.0
4.0 dc 3.0
2.0
2.0 SQUARE WAVE
1.0
0 0
0 20 40 60 80 100 120 140 160 180 200 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Current Derating, Ambient Figure 5. Power Dissipation
1.0
D = 0.5
0.5
0.2 0.1
0.1 0.05 Z � JC(t) = r(t) R � JC
0.05 0.01 P (pk) R D CURVES APPLY FOR POWER� JC = 1.5 ° C/W MAX
t1 PULSE TRAIN SHOWN
SINGLE PULSE t 2 READ TIME AT T 1
0.02 DUTY CYCLE, D = t 1 /t 2 TJ(pk) - TC = P(pk) Z�JC(t)
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
t, TIME (ms)
, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE POWER DISSIPATION (WATTS)
IF(AV) PF(AV)
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
**----- End of picture text -----**
**Figure 6. Thermal Response** **==> picture [246 x 171] intentionally omitted <==** **----- Start of picture text -----**
1000
300
TJ = 25°C
100
30
10
1.0 10 100
VR, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 7. Typical Capacitance** **http://onsemi.com** **3** **BYW80−200** ## **PACKAGE DIMENSIONS** **TO−220** CASE 221B−04 ISSUE E **==> picture [180 x 147] intentionally omitted <==** **----- Start of picture text -----**
C
Q B F T S
4
A
U
1 3
H
K
L
D R
J
G
**----- End of picture text -----**
**==> picture [122 x 152] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.595 0.620 15.11 15.75
B 0.380 0.405 9.65 10.29
C 0.160 0.190 4.06 4.82
D 0.025 0.035 0.64 0.89
F 0.142 0.161 3.61 4.09
G 0.190 0.210 4.83 5.33
H 0.110 0.130 2.79 3.30
J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.14 1.52
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.14 1.39
T 0.235 0.255 5.97 6.48
U 0.000 0.050 0.000 1.27
**----- End of picture text -----**
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