# Bipolar (BJT) Single Transistor, NPN, 400 V, 10 A, 100 W, TO-3, Through Hole

![Product image](https://novapart.co/image/farnell:1165901/)

**URL**: https://novapart.co/products/BUX80/bipolar-bjt-single-transistor-npn-400-v-10-a-100-w
**SKU**: BUX80
**Manufacturer**: MULTICOMP PRO
**Price**: €1.8400
**Stock**: 500+
**Lead Time**: 176 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:-; Power Dissipation Pd:100W; DC Collector Current:10A; DC Current Gain hFE:30hFE; Transistor Case Style:TO

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (21-Jan-2025) |
| No. Of Pins | 2Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 100W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | - |
| Transistor Case Style | TO-3 |
| Dc Current Gain Hfe Min | 30hFE |
| Operating Temperature Max | 200°C |
| Continuous Collector Current | 10A |
| Collector Emitter Voltage Max | 400V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1165901/)

## **Transistor, NPN TO-3** 

## **Description:** 

High voltage power transistor. 

Designed for use in high-voltage, high-speed, power switching in inductive circuit, motor control, solenoid and relay drivers. 

## **Features:** 

- Collector-emitter sustaining voltage - VCEO (sus) = 4,000V (Min.) 

- Low collector-emitter saturation voltage - VCE (sat) = 3V (Max.) at IC = 8A, IB = 2.5A 

## **Maximum Ratings** 

|**Maximum Ratings**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**BUX80**|**Unit**|
|Collector-Emitter Voltage|VCEO|400|V|
|CoIIector-Emitter Voltage (VBE= 0)|VCES|800||
|Emitter-Base Voltage|VEBO|10||
|Collector Current  - Continuous<br>-Peak|IC|10<br>15|A|
|Base Current-Continuous|IB|5||
|Total Power Dissipation at TC= 25°C<br>Derate above 25°C|PD|100<br>0.8|W W/°C|
|Operating and Storage Junction Temperature Range|TJ, TSTG|-65 to +200|°C|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristics**|**Symbol**|**Max.**|**Unit**|
|Thermal Resistance Junction to Case|RθJC|1.25|°C/W|



Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

17/09/19 V1.0 

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## **Transistor, NPN TO-3** 

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Power Derating<br>**----- End of picture text -----**<br>


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 Power Dissipation (Watts)<br>D,<br>P<br>**----- End of picture text -----**<br>


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TC, Temperature (°C)<br>**----- End of picture text -----**<br>


**Electrical Characteristics (TC = 25°C unless otherwise noted)** 

|**Characteristic**<br>**Symbol**<br>**Min.**<br>**Max.**<br>**Unit**<br>**OffCharacteristics**<br>~~a~~|**Characteristic**<br>**Symbol**<br>**Min.**<br>**Max.**<br>**Unit**<br>**OffCharacteristics**<br>~~a~~|**Characteristic**<br>**Symbol**<br>**Min.**<br>**Max.**<br>**Unit**<br>**OffCharacteristics**<br>~~a~~|**Characteristic**<br>**Symbol**<br>**Min.**<br>**Max.**<br>**Unit**<br>**OffCharacteristics**<br>~~a~~|**Characteristic**<br>**Symbol**<br>**Min.**<br>**Max.**<br>**Unit**<br>**OffCharacteristics**<br>~~a~~|
|---|---|---|---|---|
|Collector-Emitter Sustaining Voltage (1)<br>(lC= 100mA, lB= 0, L = 25mH)|V|400|-|V|
|Collector Cut off Current<br>(VCE= 800V, VBE= 0)<br>(VCE= 800V, VBE= 0, TC= 125°C)|ICES|-|1<br>3|mA|
|Emitter Cut off Current (VEB= 10V, IC= 0 )|IEBO|-|10||
|**OnCharacteristics(1)**|||||
|DC Current Gain<br>(lC= 1.2A, VCE= 5V)|h|30 (typical)|-|-|
|Collector-Emitter Saturation Voltage<br>(IC= 5A, IB= 1mA)<br>(lC= 8A, lB= 2.5mA)|VCE (sat)|-|1.5<br>3|V|
|Base-Emitter Saturation Voltage<br>(lC= 5.0A, IB= 1mA)<br>(lC= 8.0A, IB= 2.5mA)|VBE (sat)|-|1.4<br>1.8||
|**Switching Characteristics**|||||
|Turn On Time<br>Vcc= 250V, IC= 5A|ton|-|0.5||
|Storage Time<br>IB1= 1A, IB2= -2A|ts|-|3.5|µs|
|Fall Time<br>-|tf|-|0.5||



(1) Pulse Test : Pulse Width = 300μs, Duty Cycle ≤2%. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

17/09/19 V1.0 

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## **Transistor, NPN TO-3** 

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DC Current Gain<br>1 oo SS es<br>2S == Se<br>50<br>ee<br>- | ee t+<br>1 eT Tare<br>—————————— [—][ ——][ ———] oor<br>eSEe ooo<br>SSA<br>eePE gesa ee<br>-<br>CTIof<br>Of 15 1 2<br>I  Collector Current (Amperes)<br>C,<br> DC Current GainFE,<br>h<br>**----- End of picture text -----**<br>


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Base-Emitter Saturation Voltage<br>15>" _T_7<br>Ht ee Ht<br>ee 8 ppm<br>a  ee me”<br>a ee<br>a i —<br>pe<br>0.5jtceeee———=Oe TeLT<br>a<br>eea a<br>OL<br>ote<br>I  Collector Current (Amperes) 8S ;<br>C,<br>(Volts)<br>VBE, Base-Emitter Saturation Voltage<br>**----- End of picture text -----**<br>


## **Switching Time** 

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pS<br>i et<br>vibe|<br>1 2 3 4 5 &<br>I  Collector Current (Amperes)<br>C,<br>t, Time (μs)<br>**----- End of picture text -----**<br>


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Collector Saturation Region<br>Wa anes oon<br>34¥ 546A |p<br>sR errr tt =.<br>PLT<br>HSER<br>eatetei ree Ga<br>CHCEEE EEE]<br>“EERE EEN<br>PRHL | A AACEatREBPR<br>1 PN SE Se<br>ASERESSSSSER S S S SSSS<br>UlPeaseO.4 1.0 4<br>IC, Collector Current (Amperes)<br>Temperature Coefficients<br>A)_ a SO<br>a<br>a<br>tle<br>a a 0<br>a<br>a<br>:<br>TT<br>ee ee are,,<br>95°C<br>2 ee ;<br>i,<br>oon<br>eens<br>— a oe<br>0.1 o.2 0.4 | ?<br>IC, Collector Current (Amperes)<br>Safe Operating Area<br> Collector-Emitter Voltage (Volts)<br>CE,<br>V<br>Voltage (Volts)<br>VCE, Collector-Emitter Saturation<br>**----- End of picture text -----**<br>


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Collector Current (Amperes)<br>IC,<br>**----- End of picture text -----**<br>


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VCE, Collector Emitter Voltage (Volts)<br>**----- End of picture text -----**<br>


Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

17/09/19 V1.0 

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## **Transistor, NPN TO-3** 

## **Dimensions** 

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(TO-3)<br>**----- End of picture text -----**<br>


|**Dim.**|**Min.**|**Max.**|
|---|---|---|
|A|38.75|39.96|
|B|19.28|22.23|
|C|7.96|9.28|
|D|11.18|12.19|
|E|25.2|26.67|
|F|0.92|1.09|
|G|1.38|1.62|
|H|29.9|30.4|
|I|16.64|17.3|
|J|3.88|4.36|
|K|10.67|11.18|



Dimensions : (Millimetres) 

**Pin Configuration** Pin 1. Base 2.  Emitter Collector (Case) 

## **Part Number Table** 

|**Description**|**Part Number**|
|---|---|
|Transistor, NPN, TO-3|BUX80|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

17/09/19 V1.0 

Page <4> 



## Links

- [View this product on Novapart](https://novapart.co/products/BUX80/bipolar-bjt-single-transistor-npn-400-v-10-a-100-w)
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- [Supplier page](https://es.farnell.com/multicomp-pro/bux80/transistor-npn-to-3/dp/1165901)
---

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