# Bipolar (BJT) Single Transistor, NPN, 250 V, 180 W, 60 A, 9 hFE

![Product image](https://novapart.co/image/farnell:1084463/)

**URL**: https://novapart.co/products/BUTW92/bipolar-bjt-single-transistor-npn-250-v-180-w-60-a
**SKU**: BUTW92
**Manufacturer**: STMICROELECTRONICS
**Price**: €5.7800
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency ft:-; Power Dissipation Pd:180W; DC Collector Current:60A; DC Current Gain hFE:9hFE; Transistor Case S

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 180W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | - |
| Transistor Case Style | TO-247 |
| Dc Current Gain Hfe Min | 9hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 60A |
| Collector Emitter Voltage Max | 250V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1084463/)

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## **BUTW92** 

## HIGH CURRENT NPN SILICON TRANSISTOR 

- I STMicroelectronics PREFERRED SALESTYPE 

- I NPN TRANSISTOR 

## **APPLICATIONS:** 

- I MOTOR CONTROL 

- I HIGH FREQUENCY AND EFFICIENCY CONVERTERS 

## **DESCRIPTION** 

High current, high speed transistor suited for power conversion applications, high efficency converters and motor controls. 

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## **TO-247** 

## **INTERNAL  SCHEMATIC  DIAGRAM** 

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## **ABSOLUTE  MAXIMUM  RATINGS** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-Emitter Voltage(VBE= 0)|500|V|
|VCEO|Collector-Emitter Voltage(IB= 0)|250|V|
|VEBO|Emitter-Base Voltage(IC= 0)|7|V|
|IE|Emitter-Current|60|A|
|IEM|Emitter Peak Current(tp< 5ms)|70|A|
|IB|Base Current|15|A|
|IBM|Base Peak Current(tp< 5ms)|18|A|
|Ptot|Total Dissipation at Tc ≤25oC|180|W|
|Tstg|Storage Temperature|-65 to 150|oC|
|Tj|Max. OperatingJunction Temperature|150|oC|



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September 2001 

**BUTW92** 

## **THERMAL  DATA** 

Rthj-case Thermal  Resistance  Junction-case                         MAX 0.7 oC/W 

## **ELECTRICAL  CHARACTERISTICS** (Tcase = 25[o] C unless otherwise specified) 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ICES|Collector Cut-off<br>Current (VBE= -1.5V)|VCE= 450 V<br>VCE= 450 V          TC= 100oC|||50<br>1|µA<br>mA|
|IEBO|Emitter Cut-off Current<br>(IC= 0)|VEB= 5 V|||50|µA|
|VCES|Collector-Emitter<br>Voltage(VEB=0)|IC= 5 mA|500|||V|
|VEBO|Emitter-Base Voltage<br>(IC= 0)|IE= 50 mA|7|||V|
|VCEO(sus)∗|Collector-Emitter<br>Sustaining Voltage<br>(IB=0)|IC= 200 mA|250|||V|
|VCE(sat)∗|Collector-Emitter<br>Saturation Voltage|IC= 60 A      IB= 15 A<br>IC= 60 A      IB= 15 A     TC= 100oC||0.8<br>1.1|1<br>1.5|V<br>V|
|VBE(sat)∗|Base-Emitter<br>Saturation Voltage|IC= 60 A      IB= 15 A<br>IC= 60 A      IB= 15 A     TC= 100oC|||1.9<br>2|V<br>V|
|hFE∗|DC Current Gain|IC= 60 A        VCE= 3 V<br>IC= 60 A        VCE= 3 V  TC= 100oC<br>IC= 5 A          VCE= 3 V|9<br>6||65||
|ts<br>tf|RESISTIVE LOAD<br>Storage Time<br>Fall Time|IC= 50 A       VCC= 250 V<br>IB1= -IB2= 10 A||1.2<br>250|1.4<br>300|µs<br>ns|



* Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % 

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**BUTW92** 

## **TO-247 MECHANICAL DATA** 

|**DIM.**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.7||5.3|0.185||0.209|
|D|2.2||2.6|0.087||0.102|
|E|0.4||0.8|0.016||0.031|
|F|1||1.4|0.039||0.055|
|F3|2||2.4|0.079||0.094|
|F4|3||3.4|0.118||0.134|
|G||10.9|||0.429||
|H|15.3||15.9|0.602||0.626|
|L|19.7||20.3|0.776||0.779|
|L3|14.2||14.8|0.559||0.582|
|L4||34.6|||1.362||
|L5||5.5|||0.217||
|M|2||3|0.079||0.118|



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**BUTW92** 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 

- © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES 

Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 

**http://www.st.com** 

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- [Supplier page](https://es.farnell.com/stmicroelectronics/butw92/transistor-npn-250v-to-247/dp/1084463)
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