# Bipolar (BJT) Single Transistor, NPN, 400 V, 2 A, 20 W, TO-251, Through Hole

![Product image](https://novapart.co/image/farnell:2807153/)

**URL**: https://novapart.co/products/BULD118D-1/bipolar-bjt-single-transistor-npn-400-v-2-a-20-w
**SKU**: BULD118D-1
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.2170
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:-; Power Dissipation Pd:20W; DC Collector Current:2A; DC Current Gain hFE:8hFE; Transistor Case

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 20W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | - |
| Transistor Case Style | TO-251 |
| Dc Current Gain Hfe Min | 8hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 2A |
| Collector Emitter Voltage Max | 400V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807153/)

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## **BULD118D-1** 

## HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 

- I INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE 

- I HIGH VOLTAGE CAPABILITY 

- I LOW SPREAD OF DYNAMIC PARAMETERS 

- I MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION 

- I VERY HIGH SWITCHING SPEED 

## **APPLICATIONS:** 

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- I ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING 

- I FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS 

**IPAK (TO-251)** 

## **DESCRIPTION** 

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. 

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. 

The device is designed for use in lighting applications and low cost switch-mode power supplies. 

## **INTERNAL  SCHEMATIC  DIAGRAM** 

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## **ABSOLUTE  MAXIMUM  RATINGS** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-Emitter Voltage(VBE= 0)|700|V|
|VCEO|Collector-Emitter Voltage(IB= 0)|400|V|
|VEBO|Emitter-Base Voltage(IC= 0)|9|V|
|IC|Collector Current|2|A|
|ICM|Collector Peak Current(tp< 5 ms)|4|A|
|IB|Base Current|1|A|
|IBM|Base Peak Current(tp< 5 ms)|2|A|
|Ptot|Total Dissipation at Tc= 25oC|20|W|
|Tstg|Storage Temperature|-65 to 150|oC|
|Tj|Max. OperatingJunction Temperature|150|oC|



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June 2001 

**BULD118D-1** 

## **THERMAL  DATA** 

Rthj-case Thermal  Resistance  Junction-Case                   Max 6.25 oC/W Rthj-amb Thermal  Resistance  Junction-Ambient               Max 100 oC/W 

## **ELECTRICAL  CHARACTERISTICS** (Tcase = 25[o] C unless otherwise specified) 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ICES|Collector Cut-off<br>Current (VBE= 0)|VCE= 700 V<br>VCE= 700 V             Tj= 125oC|||100<br>500|µA<br>µA|
|VEBO|Emitter-Base Voltage|IE= 10 mA|9|||V|
|VCEO(sus)|Collector-Emitter<br>SustainingVoltage|IC= 100 mA             L = 25 mH|400|||V|
|ICEO|Collector-Emitter<br>Leakage Current|VCE= 400 V|||250|µA|
|VCE(sat)∗|Collector-Emitter<br>Saturation Voltage|IC= 0.5 A                 IB= 0.1 A<br>IC= 1 A                    IB= 0.2 A<br>IC= 2 A                    IB= 0.4 A|||0.5<br>1<br>1.5|V<br>V<br>V|
|VBE(sat)∗|Base-Emitter<br>Saturation Voltage|IC= 0.5 A                 IB= 0.1 A<br>IC= 1 A                    IB= 0.2 A<br>IC= 2 A                    IB= 0.4 A|||1.0<br>1.2<br>1.3|V<br>V<br>V|
|hFE∗|DC Current Gain|IC= 10 mA               VCE= 5 V<br>IC= 0.5 A                 VCE= 5 V<br>IC= 2 A                    VCE= 5 V|10<br>10<br>8||50||
|tr<br>tf<br>ts|RESISTIVE LOAD<br>Rise Time<br>Fall Time<br>Storage Time<br>group A<br>group B|VCC= 125  V            IC= 2 A<br>IB1= 0.4 A               IB2= -0.2 A<br>tp= 30µs|1.4<br>2|0.7<br>0.3|0.5<br>2.1<br>2.75|µs<br>µs<br>µs<br>µs|
|ts<br>tf|INDUCTIVE LOAD<br>Storage Time<br>Fall Time|IC= 1 A                   IB1= 0.2 A<br>VBE= -5 V               L = 50 mH<br>Vclamp= 300 V||0.8<br>0.10||µs<br>µs|
|VF|Diode Forward  Voltage|IC= 1 A|||2.5|V|



∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Note : Product is pre-selected in storage time (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. 

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**BULD118D-1** 

Safe Operating Areas 

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DC Current Gain 

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Collector Emitter Saturation Voltage 

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## Derating Curve 

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DC Current Gain 

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Base Emitter Saturation Voltage 

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**BULD118D-1** 

## Inductive Fall  Time 

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Resistive Fall  Time 

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## Inductive Storage  Time 

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Resistive Load Storage  Time 

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Reverse Biased SOA 

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**BULD118D-1** 

**Figure 1:** Inductive Load Switching Test Circuit. 

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1) Fast electronic switch<br>2) Non-inductive Resistor<br>3) Fast recovery rectifier<br>**----- End of picture text -----**<br>


**Figure 2:** Resistive Load Switching Test Circuit. 

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1) Fast electronic switch<br>2) Non-inductive Resistor<br>**----- End of picture text -----**<br>


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**BULD118D-1** 

## **TO-251 (IPAK) MECHANICAL DATA** 

|**DIM**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
|**.**|**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|2.20||2.40|0.087||0.094|
|A1|0.90||1.10|0.035||0.043|
|A3|0.70||1.30|0.028||0.051|
|B|0.64||0.90|0.025||0.035|
|B2|5.20||5.40|0.204||0.213|
|B3|||0.85|||0.033|
|B5||0.30|||0.012||
|B6|||0.95|||0.037|
|C|0.45||0.60|0.018||0.024|
|C2|0.48||0.60|0.019||0.024|
|D|6.00||6.20|0.237||0.244|
|E|6.40||6.60|0.252||0.260|
|G|4.40||4.60|0.173||0.181|
|H|15.90||16.30|0.626||0.642|
|L|9.00||9.40|0.354||0.370|
|L1|0.80||1.20|0.031||0.047|
|L2||0.80|1.00||0.031|0.039|
|V1||10o|||10o||



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**BULD118D-1** 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 

- © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES 

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**http://www.st.com** 

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- [Supplier page](https://es.farnell.com/stmicroelectronics/buld118d-1/transistor-npn-400v-2a-to-251/dp/2807153)
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