# Bipolar (BJT) Single Transistor, NPN, 800 V, 4 A, 90 W, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:9935193/)

**URL**: https://novapart.co/products/BUL216/bipolar-bjt-single-transistor-npn-800-v-4-a-90-w
**SKU**: BUL216
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.7830
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:800V; Transition Frequency ft:-; Power Dissipation Pd:90W; DC Collector Current:2A; DC Current Gain hFE:40hFE; Transistor Case Style:TO

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 90W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | - |
| Transistor Case Style | TO-220 |
| Dc Current Gain Hfe Min | 40hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 4A |
| Collector Emitter Voltage Max | 800V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9935193/)

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## **BUL216** 

## HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 

- I STMicroelectronics PREFERRED SALESTYPE 

- I NPN TRANSISTOR 

- I HIGH VOLTAGE CAPABILITY 

- I VERY HIGH SWITCHING SPEED 

- I HIGH OPERATING JUNCTION TEMPERATURE 

- I HIGH RUGGEDNESS 

## **APPLICATIONS** 

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- I ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING 

- I SWITCH MODE POWER SUPPLIES 

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## **DESCRIPTION** 

The BUL216 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. 

The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. 

## **INTERNAL  SCHEMATIC  DIAGRAM** 

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## **ABSOLUTE  MAXIMUM  RATINGS** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-Emitter Voltage(VBE= 0)|1600|V|
|VCEO|Collector-Emitter Voltage(IB= 0)|800|V|
|VEBO|Emitter-Base Voltage(IC= 0)|9|V|
|IC|Collector Current|4|A|
|ICM|Collector Peak Current(tp< 5 ms)|6|A|
|IB|Base Current|2|A|
|IBM|Base Peak Current(tp< 5 ms)|4|A|
|Ptot|Total Dissipation at Tc= 25oC|90|W|
|Tstg|Storage Temperature|-65 to 150|oC|
|Tj|Max. OperatingJunction Temperature|150|oC|



1/6 

June 2001 

**BUL216** 

## **THERMAL  DATA** 

Rthj-case Thermal  Resistance  Junction-Case                       Max 1.39 oC/W Rthj-amb Thermal  Resistance  Junction-Ambient                  Max 62.5 oC/W 

## **ELECTRICAL  CHARACTERISTICS** (Tcase = 25[o] C unless otherwise specified) 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ICES|Collector Cut-off<br>Current (VBE= 0)|VCE= 1600 V<br>VCE= 1600 V    Tj= 125oC|||100<br>500|µA<br>µA|
|ICEO|Collector Cut-off<br>Current(IB= 0)|VCE= 800 V|||250|µA|
|VCEO(sus)|Collector-Emitter<br>SustainingVoltage|IC= 100 mA   L = 25 mH|800|||V|
|VEBO|Emitter-Base Voltage<br>(IC= 0)|IE= 10 mA|9|||V|
|VCE(sat)∗|Collector-Emitter<br>Saturation Voltage|IC= 1 A    IB= 0.2 A<br>IC= 2 A    IB= 0.66 A|||1<br>3|V<br>V|
|VBE(sat)∗|Base-Emitter<br>Saturation Voltage|IC= 1 A    IB= 0.2 A<br>IC= 2 A    IB= 0.66 A|||1.2<br>1.2|V<br>V|
|hFE∗|DC Current Gain|IC= 0.4 A      VCE= 5 V<br>IC= 10 mA    VCE= 5 V|12<br>10||40||
|ts<br>tf|INDUCTIVE LOAD<br>Storage Time<br>Fall Time|IC= 1.5 A          IB1= 0.5 A<br>VBE(off)= -5 V    RBB= 0Ω<br>VCL= 250 V      L = 200µH||2.1<br>450|3.3<br>720|µs<br>ns|
|ts<br>tf|INDUCTIVE LOAD<br>Storage Time<br>Fall Time|IC= 1.5 A          IB1= 0.5 A<br>VBE(off)= -5 V    RBB= 0Ω<br>VCL= 250 V      L = 200µH<br>Tj= 100oC||3<br>600||µs<br>ns|



∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 

## Safe Operating Areas 

## Derating Curve 

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2/6 

**BUL216** 

## DC Current Gain 

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Collector Emitter Saturation Voltage 

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Inductive Fall  Time 

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## DC Current Gain 

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Base Emitter Saturation Voltage 

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Inductive Storage  Time 

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3/6 

**BUL216** 

## Inductive Fall Time 

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Reverse Biased SOA 

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Inductive Storage Time 

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RBSOA and Inductive Load Switching Test Circuits 

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4/6 

**BUL216** 

## **TO-220 MECHANICAL DATA** 

|**DIM.**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.40||4.60|0.173||0.181|
|C|1.23||1.32|0.048||0.052|
|D|2.40||2.72|0.094||0.107|
|E|0.49||0.70|0.019||0.027|
|F|0.61||0.88|0.024||0.034|
|F1|1.14||1.70|0.044||0.067|
|F2|1.14||1.70|0.044||0.067|
|G|4.95||5.15|0.194||0.202|
|G1|2.40||2.70|0.094||0.106|
|H2|10.00||10.40|0.394||0.409|
|L2||16.40|||0.645||
|L4|13.00||14.00|0.511||0.551|
|L5|2.65||2.95|0.104||0.116|
|L6|15.25||15.75|0.600||0.620|
|L7|6.20||6.60|0.244||0.260|
|L9|3.50||3.93|0.137||0.154|
|M||2.60|||0.102||
|DIA.|3.75||3.85|0.147||0.151|



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P011CI 5/6 

**BUL216** 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 

- © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES 

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**http://www.st.com** 

6/6 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/bul216/transistor-npn-to-220/dp/9935193)
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