# Bipolar (BJT) Single Transistor, NPN, 400 V, 5 A, 80 W, TO-220, Through Hole
**URL**: https://novapart.co/products/BUL138/bipolar-bjt-single-transistor-npn-400-v-5-a-80-w
**SKU**: BUL138
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.7010
**Stock**: 100+
**Lead Time**: 274 days (indicative)
## Description
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:-; Power Dissipation Pd:80W; DC Collector Current:5A; DC Current Ga; Available until stocks are exhausted
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 80W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | - |
| Transistor Case Style | TO-220 |
| Dc Current Gain Hfe Min | 10hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 5A |
| Collector Emitter Voltage Max | 400V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:9935185/)
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®
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## **BUL138**
## HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
- I STMicroelectronics PREFERRED SALESTYPE
- I NPN TRANSISTOR
- I HIGH VOLTAGE CAPABILITY
- I LOW SPREAD OF DYNAMIC PARAMETERS
- I MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
- I VERY HIGH SWITCHING SPEED
- I FULLY CHARACTERIZED AT 125[o] C
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2
1
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## **APPLICATIONS**
- I ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
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TO-220
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- I FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS
## **DESCRIPTION**
The BUL138 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds.
The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.
## **INTERNAL SCHEMATIC DIAGRAM**
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## **ABSOLUTE MAXIMUM RATINGS**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-Emitter Voltage(VBE= 0)|800|V|
|VCEO|Collector-Emitter Voltage(IB= 0)|400|V|
|VEBO|Emitter-Base Voltage(IC= 0)|9|V|
|IC|Collector Current|5|A|
|ICM|Collector Peak Current(tp< 5 ms)|10|A|
|IB|Base Current|2|A|
|IBM|Base Peak Current(tp< 5 ms)|4|A|
|Ptot|Total Dissipation at Tc= 25oC|80|W|
|Tstg|Storage Temperature|-65 to 150|oC|
|Tj|Max. OperatingJunction Temperature|150|oC|
1/6
June 2001
**BUL138**
## **THERMAL DATA**
Rthj-case Thermal Resistance Junction-case Max 1.56 oC/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 oC/W
## **ELECTRICAL CHARACTERISTICS** (Tcase = 25[o] C unless otherwise specified)
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ICES|Collector Cut-off
Current (VBE= 0)|VCE= 800 V
VCE= 800 V Tj= 125oC|||100
500|µA
µA|
|ICEO|Collector Cut-off
Current(IB= 0)|VCE= 400 V|||250|µA|
|VCEO(sus)|Collector-Emitter
SustainingVoltage|IC= 100 mA L = 25 mH|400|||V|
|VEBO|Emitter-Base Voltage|IE= 10 mA|9|||V|
|VCE(sat)∗|Collector-Emitter
Saturation Voltage|IC= 1 A IB= 0.2 A
IC= 2 A IB= 0.4 A
IC= 3 A IB= 0.6 A
IC= 4 A IB= 1 A
IC= 5 A IB= 1 A||0.7|0.5
0.7
1
1|V
V
V
V
V|
|VBE(sat)∗|Base-Emitter
Saturation Voltage|IC= 1 A IB= 0.2 A
IC= 2 A IB= 0.4 A
IC= 3 A IB= 0.6 A|||1.1
1.3
1.5|V
V
V|
|hFE∗|DC Current Gain|IC= 2 A VCE= 5 V
IC= 10 mA VCE= 5 V|8
10||40||
|ts|RESISTIVE LOAD
Storage Time|IC= 2 A IB1= -IB2= 0.4 A
VCC= 250 V|2.4||3.5|µs|
|ts
tf|INDUCTIVE LOAD
Storage Time
Fall Time|IC= 2 A IB1= 0.4 A
VBE(off)= -5 V RBB= 0Ω
VCL= 250 V L = 200µH||0.7
50|1.4
100|µs
ns|
|ts
tf|INDUCTIVE LOAD
Storage Time
Fall Time|IC= 2 A IB1= 0.4 A
VBE(off)= -5V RBB= 0Ω
VCL= 250 V L = 200µH
Tj= 125oC||1
75||µs
ns|
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
## Safe Operating Areas
## Derating Curve
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2/6
**BUL138**
## DC Current Gain
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Collector-Emitter Saturation Voltage
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Inductive Fall Time
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## DC Current Gain
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Base-Emitter Saturation Voltage
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Inductive Storage Time
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3/6
**BUL138**
## Reverse Biased SOA
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RBSOA and Inductive Load Switching Test Circuits
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1) Fast electronic switch 2) Non-inductive Resistor
3) Fast recovery rectifier
4/6
**BUL138**
## **TO-220 MECHANICAL DATA**
|**DIM.**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.40||4.60|0.173||0.181|
|C|1.23||1.32|0.048||0.052|
|D|2.40||2.72|0.094||0.107|
|E|0.49||0.70|0.019||0.027|
|F|0.61||0.88|0.024||0.034|
|F1|1.14||1.70|0.044||0.067|
|F2|1.14||1.70|0.044||0.067|
|G|4.95||5.15|0.194||0.202|
|G1|2.40||2.70|0.094||0.106|
|H2|10.00||10.40|0.394||0.409|
|L2||16.40|||0.645||
|L4|13.00||14.00|0.511||0.551|
|L5|2.65||2.95|0.104||0.116|
|L6|15.25||15.75|0.600||0.620|
|L7|6.20||6.60|0.244||0.260|
|L9|3.50||3.93|0.137||0.154|
|M||2.60|||0.102||
|DIA.|3.75||3.85|0.147||0.151|
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P011CI 5/6
**BUL138**
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics
- © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES
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**http://www.st.com**
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## Links
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- [Supplier page](https://es.farnell.com/stmicroelectronics/bul138/transistor-npn-to-220/dp/9935185)
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