BU406 .

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September 2013 

## **BU406** 

## **NPN Epitaxial Silicon Transistor** 

## **Features** 

- High-Voltage Capability 

- High Switching Speed 

- Low Saturation Voltage 

## **Description** 

The BU406 is a 400 V 7 A Silicon Epitaxial Planar NPN Transistor. The BU406 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent Power Dissipation. 

## **Applications** 

- Horizontal deflection for TV and CRT 

**==> picture [75 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 TO-220<br>**----- End of picture text -----**<br>


1.Base    2.Collector    3.Emitter 

## **Ordering Information** 

|**Part Number**|**Marking**|**Package**|**Packing Method**|
|---|---|---|---|
|BU406|BU406|TO-220 3L|Rail|
|BU406TU|BU406|||



## **Absolute Maximum Ratings** 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Value**|**Units**|
|---|---|---|---|
|VCBO|Collector-Base Voltage|400|V|
|VCEO|Collector-Emitter Voltage|200|V|
|VEBO|Emitter-Base Voltage|6|V|
|IC|Collector Current(DC)|7|A|
|ICP|Collector Current(Pulse)|10|A|
|IB|Base Current|4|A|
|PC|Collector Dissipation|60|W|
|TJ|Junction Temperature|150|°C|
|TSTG|Storage Temperature|- 55 to 150|°C|



© 2000 Fairchild Semiconductor Corporation BU406 Rev. 1.2.1 

www.fairchildsemi.com 

1 

## **Electrical Characteristics** 

|**Symbol**|**Parameter**|**Test Condition**|**Min.**|**Max.**|**Units**|
|---|---|---|---|---|---|
|ICES|Collector Cut-Off Current|VCE= 400 V, VBE= 0||5|mA|
|||VCE= 250 V, VBE= 0||100|μA|
|||VCE= 250 V, VBE= 0<br>at TC= 150°C||1|mA|
|IEBO|Emitter Cut-Off Current|VBE= 6 V, IC= 0||1|mA|
|VCE(sat)|Collector-Emitter Saturation Voltage|IC= 5 A, IB= 0.5 A||1|V|
|VBE(sat)|Base-Emitter Saturation Voltage|IC= 5 A, IB= 0.5 A||1.2|V|
|fT|Current Gain Bandwidth Product|VCE= 10 V, IC= 0.5 A|10||MHz|
|tOFF|Turn-Off Time|IC= 5 A, IB= 0.5 A||0.75|μs|



© 2000 Fairchild Semiconductor Corporation BU406 Rev. 1.2.1 

www.fairchildsemi.com 

2 

## **Typical Performance Characteristics** 

**==> picture [424 x 575] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 1000<br>V CE = 5V<br>4<br>ZI<br>100<br>3 Po<br>2 | Zan eee<br>10<br>Zane<br>1 |.+_—_<br>yi Td<br>0 0 fFaoe 1 | | 2 |[| 3 ft| 4 | 5 fet[| 6 ft 7 ft| 8 f 9 t l 10 1 1 aa 10 100 1000 10000<br>VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT<br>Figure 1. Static Characteristic Figure 2. DC Current Gain<br>10000 1000<br>IC = 10 IB f = 1MHz<br>1000 VBE(sat) 100<br>si agai<br>100 10<br>VCE(sat)<br>10 1<br>1 10 100 1000 10000 1 10 100<br>IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE  VOLTAGE<br>Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance<br>Collector-Emitter Saturation Voltage<br>80<br>70<br>IC Max. (Pulsed)<br>10 SSS IC Max. (Continuous)  a 60 SEE<br>-——+ 50 | {| | | | | ft |<br>40<br>1 PNA\ | 30 NERP|ES|X E T]<br>2010 YF | | | IN | [|<br>A ft ft<br>0.1 \\ 0 FtP| | | ||N| {TfIN, ft | |<br>1 10 100 0 25 50 75 100 125 150 175 200<br>VCE[V], COLLECTOR-EMITTER VOLTAGE TC[oC], CASE TEMPERATURE<br>Figure 5. Safe Operating Area Figure 6. Power Derating<br>IB = 20mA<br>IB = 140mAIB = 120mAIB = 100mAIB = 80mA<br>IB = 60mA<br>IB = 40mA<br>IB = 200mA IB = 160mA<br>IB = 180mA<br>10ms<br>Dissipation Limited<br>1ms<br>100ms<br>S/b Limited<br>, DC CURRENT GAIN<br>[A], COLLECTOR CURRENTIC hFE<br>(sat)[V]SATURATION VOLTAGE<br>BE  [pF], CAPACITANCE<br>ob<br>C<br>(sat)[V], V<br>CE<br>V<br>[A], COLLECTOR CURRENTIC  [W], POWER DISSIPATIOANPC<br> MAX.<br>CE<br>V<br>**----- End of picture text -----**<br>


© 2000 Fairchild Semiconductor Corporation BU406 Rev. 1.2.1 

www.fairchildsemi.com 

3 

## **Physical Dimensions** 

**==> picture [183 x 14] intentionally omitted <==**

**----- Start of picture text -----**<br>
                         TO-220<br>**----- End of picture text -----**<br>


## **Figure 7. TO-220, MOLDED, 3-LEAD, JEDEC VARIATION AB** 

_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/TO/TO220Y03.pdf ._ 

_For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-TO220Y03_SHEDCL.pdf_ . 

© 2000 Fairchild Semiconductor Corporation BU406 Rev. 1.2.1 

www.fairchildsemi.com 

4 

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## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications may change<br>in anymanner without notice.|
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|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make<br>changes at anytime without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.<br>The datasheet is for reference information only.|



Rev. I65 

© Fairchild Semiconductor Corporation 

www.fairchildsemi.com 

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