# Thyristor, 800 V, 80 mA, 32 A, 50 A, TOP-3

![Product image](https://novapart.co/image/farnell:1057302/)

**URL**: https://novapart.co/products/BTW69-800RG/thyristor-800-v-80-ma-32-a-50-top-3
**SKU**: BTW69-800RG
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCRs
**Price**: €4.8100
**Stock**: 500+
**Lead Time**: 379 days (indicative)

## Description

Peak Repetitive Off-State Voltage, Vdrm:800V; Gate Trigger Current Max, Igt:80mA; Current It av:32A; On State RMS Current IT(rms):50A; Thyristor Case Style:TOP-3; No. of Pins:-; Peak Non Rep S

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | - |
| Product Range | - |
| Thyristor Mounting | Through Hole |
| Holding Current Max | 150mA |
| On State Rms Current | 50A |
| Thyristor Case Style | TOP-3 |
| Average On State Current | 32A |
| Gate Trigger Current Max | 80mA |
| Gate Trigger Voltage Max | 1.3V |
| Operating Temperature Max | 125°C |
| Peak Non Repetitive Surge Current | 580A |
| Peak Repetitive Off State Voltage | 800V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1057302/)

**BTW69-800** 

Datasheet 

## 50 A 800 V SCR in TOP3 insulated 

**==> picture [70 x 149] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>G<br>x<br>K<br>K<br>A<br>G<br>TOP3 Isolated<br>**----- End of picture text -----**<br>


## **Features** 

- Max. repetitive blocking voltage = VDRM, VRRM = 800 V 

- IGT maximum = 80 mA 

- ECOPACK[®] 2 component (RoHS and HF compliance) 

- Complies with UL 1557 standard (File ref : E81734) 

## **Applications** 

- Solid state relays 

- Welding equipment 

- High power motor control 

- Heating systems 

- Controlled AC/DC bridge 

## **Description** 

Available in a high power package TOP3-I, the BTW69-800 is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment, high power motor control and power converters. 

This device offers a superior performance in surge current handling capabilities, allowing usage in industrial environment. 

|**Product status link**<br>~~ea~~|
|---|
|BTW69-800|
||
|**Product summary**<br>~~ea~~|
|**IT(RMS)**<br>50 A|
|**VDRM/VRRM**<br>800 V|
|**IGT**<br>80 mA|



Thanks to its internal ceramic pad, it provide high voltage insulation (2500VRMS), complying with UL standards (file ref: E81734). 

**DS13093** - **Rev 1** - **September 2019** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**BTW69-800 Characteristics** 

**1** 

## **Characteristics** 

**Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameters**|**Parameters**||**Value**|**Unit**|
|---|---|---|---|---|---|
|IT(RMS)|RMS on-state current (180° conduction angle)||Tc= 75 °C|50|A|
|IT(AV)|Average on-state current<br>(180° conduction angle)||Tc= 75 °C|32|A|
|ITSM|Non repetitive surge peak on-state current (full cycle, Tjinitial = 25 °C, VR= 0 V)||tp= 8.3 ms|610|A|
||||tp= 10 ms|580||
|I2t|I2t value for fusing|tp= 10 ms, Tj= 25°C||1680|A2s|
|dl/dt|Critical rate of rise of on-state current<br>IG= 2 x IGT, tr≤ 100 ns|F = 60 Hz|Tj= 125 °C|50|A/µs|
|IGM|Peak gate current|tp= 20 µs|Tj= 125 °C|8|A|
|PG(AV)|Average gate power dissipation||Tj= 125 °C|1|W|
|Tstg|Storage junction temperature range|||-40 to +150|°C|
|Tj|Operating junction temperature range|||-40 to +125|°C|
|VGRM|Maximum peak reverse gate voltage|||5|V|
|Vins|Insulation RMS voltage, 1 minute|||2500|V|



**Table 2. Electrical characteristics (Tj = 25°C, unless otherwise specified)** 

|**Symbol**|**Test conditions**|**Tj**||**Value**|**Unit**|
|---|---|---|---|---|---|
|IGT|VD= 12 V, RL= 33 Ω||Min.|8|mA|
||||Max|80||
|VGT|||Max|1.3|V|
|VGD|VD= VDRM, RL= 3.3 kΩ|125 °C|Min.|0.2|V|
|IH|IT= 500 mA, gate open||Max.|150|mA|
|IL|IG= 1.2 x IGT||Max.|200|mA|
|dV/dt|VD= 67 %, VDRMgate open|125 °C|Min.|1000|V/µs|
|VTM|ITM= 100 A, tp= 380 μs||Max.|1.9|V|
|VTO|Threshold on-state voltage|125 °C|Max.|1.0|V|
|RD|On-state dynamic resistance|125 °C|Max.|8.5|mΩ|
|IDRM/IRRM|VD= VDRM, VR= VRRM|25 °C|Max.|10|µA|
|||125 °C||5|mA|



**DS13093** - **Rev 1** 

**page 2/9** 

**BTW69-800 Characteristics (curves)** 

**Table 3. Thermal resistance** 

|**Symbol**|**Parameters**|**Value**|**Unit**|
|---|---|---|---|
|Rth(j-c)|Junction to case (D.C)|0.9<br><br>50|°C/W|
|Rth(j-a)|Junction to ambiant (D.C)|||



## **1.1 Characteristics (curves)** 

**==> picture [513 x 205] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1. Maximum average power dissipation versus Figure 2. Average on-state current versus case<br>average on-state current temperature<br>55 P(W) 60 IT(AV)(A)<br>DC<br>50 α = 180 ° 50<br>45<br>40<br>40<br>35 α  = 180 °<br>30<br>30<br>25<br>20<br>15 360 ° 20 360°<br>10<br>5 I T(AV) (A) 10<br>0 Tc (°C)<br>0 10 20 30 40 0<br>0 25 50 75 100 125<br>**----- End of picture text -----**<br>


**==> picture [513 x 206] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3. Relative variation of thermal impedance versus<br>pulse duration Figure 4. Relative variation of gate trigger current, holding<br>current and latching current versus junction temperature<br>IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25 °C]<br>1.E+00 K = [Zth / Rth] 2.5<br>2.0<br>Zth (j-c) I GT<br>1.E-01 Zth (j-a) 1.5<br>1.0 IH and IL<br>0.5<br>1.E-02 tp(s) Tj (°C)<br>0.0<br>1.E-03 1.E-01 1.E+01 1.E+03<br>-40 10 60 110<br>**----- End of picture text -----**<br>


**DS13093** - **Rev 1** 

**page 3/9** 

**BTW69-800 Characteristics (curves)** 

**==> picture [513 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 6. Non repetitive surge peak on-state current for a<br>Figure 5. Surge peak on-state current versus number of<br>sinusoidal pulse with width tp< 10 ms, and corresponding<br>cycles (VR = 0 V)<br>value of I²t (VR = 0 V)<br>ITSM(A) ITSM(A) ,I t (A s)2 2<br>600 10000<br>Tj initial=25°C<br>500<br>t=10ms<br>Non repetitive<br>400 T j  initial = 25 °C One cycle dI/dt limitation:<br>50A/µs ITSM<br>300 RepetitiveTc = 75 °C 1000<br>200<br>100<br>Number of cycles<br>0 tp(ms)<br>1 10 100 1000 100<br>0.01 0.10 1.00 10.00<br>**----- End of picture text -----**<br>


**Figure 7. On-state characteristics (maximum values)** 

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**----- Start of picture text -----**<br>
ITM(A)<br>1000<br>100<br>TJ = 125 °C<br>10<br>1<br>TJ = 25 °C TJ max:<br>Vt0 [= 1 V]<br>VTM(V) Rd = 8.5 mΩ<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>**----- End of picture text -----**<br>


**DS13093** - **Rev 1** 

**page 4/9** 

**BTW69-800 Package information** 

**2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **2.1 TOP3 Ins. package information** 

- ECOPACK® (Lead-free plating and Halogen free package compliance) 

- Lead-free package leads finishing 

- Halogen-free molding compound resin meets UL94 standard level V0 

- Recommended torque: 1.05 N·m (max. torque: 1.2 N·m) 

**Figure 8. TOP3 Isolated package outline** 

**==> picture [312 x 370] intentionally omitted <==**

**DS13093** - **Rev 1** 

**page 5/9** 

**BTW69-800 TOP3 Isolated package information** 

## **Table 4. TOP3 Isolated mechanical data** 

||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|
|**Ref.**|**mm**|||**Inches(1)**|||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|0.1732||0.1811|
|B|1.45||1.55|0.0571||0.0610|
|C|14.35||15.60|0.5650||0.6142|
|D|0.50||0.70|0.0197||0.0276|
|E|2.70||2.90|0.1063||0.1142|
|F|15.80||16.50|0.6220||0.6496|
|G|20.40||21.10|0.8031||0.8307|
|H|15.10||15.50|0.5945||0.6102|
|J|5.40||5.65|0.2126||0.2224|
|K|3.40||3.65|0.1339||0.1437|
|L|4.08||4.17|0.1606||0.1642|
|M|1.20||1.40|0.0472||0.0551|
|R||4.60|||0.1811||



_1. Inches given for reference only_ 

**DS13093** - **Rev 1** 

**page 6/9** 

**BTW69-800 Ordering information** 

**3** 

## **Ordering information** 

**Figure 9. Ordering information scheme** 

**==> picture [356 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
BTW  69   -  800       RG<br>Standard SCR series<br>Type<br>69 = 50 A<br>Voltage<br>800 = 800 V<br>Packing mode<br>RG = Tube<br>**----- End of picture text -----**<br>


**Table 5. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|BTW69-800RG|BTW69800|TOP3 Ins.|4.5 g|30|Tube|



**DS13093** - **Rev 1** 

**page 7/9** 

**BTW69-800** 

## **Revision history** 

**Table 6. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|09-Sep-2019|1|Initial release.|



**DS13093** - **Rev 1** 

**page 8/9** 

**BTW69-800** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2019 STMicroelectronics – All rights reserved 

**DS13093** - **Rev 1** 

**page 9/9** 



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