# Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 5.1 A, 5.1 A, 0.041 ohm

![Product image](https://novapart.co/image/farnell:4319317/)

**URL**: https://novapart.co/products/BSZ215CHXTMA1/dual-mosfet-complementary-n-and-p-channel-20-v-51
**SKU**: BSZ215CHXTMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.4080
**Stock**: 10+
**Lead Time**: 148 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | Complementary N and P Channel |
| Product Range | OptiMOS 2 Series |
| Qualification | AEC-Q101 |
| Transistor Case Style | TSDSON |
| Operating Temperature Max | 175°C |
| Power Dissipation N Channel | 2.5W |
| Power Dissipation P Channel | 2.5W |
| Drain Source Voltage Vds N Channel | 20V |
| Drain Source Voltage Vds P Channel | 20V |
| Continuous Drain Current Id N Channel | 5.1A |
| Continuous Drain Current Id P Channel | 5.1A |
| Drain Source On State Resistance N Channel | 0.041ohm |
| Drain Source On State Resistance P Channel | 0.041ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4319317/)

**BSZ215C H** 

## **OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor** 

## **Product Summary** 

## **Features** 

|**Features**||||**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Complementary P + N channel||||||||||||||||||**P**|||**N**||||
||||||||||||||||||||||||||
||||||||||||||||||||||||||
|Enhancement mode||||_V_DS||||DS||||||||||-20|||20|||V|
||||||||||||||||||||||||||
||||||||||||||||||||||||||
|Super Logic level (2.5V rated)||||_R_DS(on),max|||||||_V_GS=±4.5 V|||||||150|||55|||mW|
||||||||||||||||||||||||||
|Common drain|||||||||||_V_GS=±2.5 V|||||||310|||95||||
||||||||||||||||||||||||||
||||||||||||||||||||||||||
|Avalanche rated||||_I_D||||||||||||||-3.2|||5.1|||A|
||||||||||||||||||||||||||
|175 °C operating temperature<br>Qualified according to AEC Q101<br>100% lead-free; RoHS compliant<br>Halogen-free according to IEC61246-21<br>2S<br>RoHs,-<br>——{—<br>ro<br>Keg® * S/ (Gi,Halogen-Free|||S1<br>Gi<br>G2<br>S2[4|[4||||PS] <br>f <br>lsD1/2<br>12}|||||Di/2<br> D1/2 <br>D1/2<br> D1/2|PG-TSDSON-8LT1<br> }<br>oS<br>4<br>“29|||||||||||
||||||||||||||||||||||||||
|Type<br>Package|||Marking|Marking||||Lead Free|||||Halogen Free||||||||Packing||||
||||||||||||||||||||||||||
|BSZ215C H<br>PG-TSDSON-8 LTI|||215C|||||Yes|||||Yes||||||||Non dry||||



- Complementary P + N channel 

- Enhancement mode 

- Super Logic level (2.5V rated) 

- Common drain 

- Avalanche rated 

- 175 °C operating temperature 

- Qualified according to AEC Q101 

- 100% lead-free; RoHS compliant 

- Halogen-free according to IEC61246-21 

> [1)] 

**Maximum ratings,** at _T_ j=25 °C, unless otherwise specified 

|**Maximum ratings,**at_T_j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified[1)]||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Unit**<br>**Value**||**Unit**|
||||**P**|**N**||
|Continuous drain current|_I_D|_T_A=25 °C|-3.2|5.1<br>A|A|
|||_T_A=100 °C|-2.2|3.6||
|Pulsed drain current|_I_D,pulse|_T_A=25 °C|-13|20||
|Avalanche energy, single pulse|_E_AS|P:_I_D=-3.2 A,<br>N:_I_D=5.1 A,<br>_R_GS=25W|11|11<br>mJ|mJ|
|Gate source voltage|_V_GS||V<br>±12||V|
|Power dissipation|_P_tot<br>2)|_T_A=25 °C|W<br>2.5||W|
|Operating and storage temperature|_T_j,_T_stg||°C<br>-55 ... 175||°C|
|ESD class||JESD22-A114-HBM|0 (<250V)|||
|Soldering temperature|_T_solder||°C<br>260||°C|
|IEC climatic category; DIN IEC 68-1|||55/175/56|||



- 1) Remark: only one of both transistors active 

Rev 2.03 

page 1 

2016-10-04 

**BSZ215C H** 

|Cinfineon|||**BSZ215C H**<br>|
|---|---|---|---|
|**Parameter**<br>**Thermal characteristics**<br>~~ee~~|~~ee~~|**Symbol Conditions**<br>~~ee~~<br>~~ee ~~|**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~<br> ~~ee~~|
|Thermal resistance, junction -<br>case|P<br>N|_R_thJC|-<br>-<br>8<br>K/W|
|Device on PCB||_R_thJA<br>6 cm2cooling area2)|-<br>-<br>60<br>K/W|



**Electrical characteristics,** at _T_ j=25 °C, unless otherwise specified 

|**Static characteristics**||||||||
|---|---|---|---|---|---|---|---|
|Drain-source breakdown voltage|P|_V_(BR)DSS|_V_GS=0 V,_I_D=-250 µA|-|-|-20|V|
||N<br>~~eee~~|~~eee~~|_V_GS=0 V,_I_D=250 µA<br>~~eee~~|20<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~||
|Gate threshold voltage|P<br>~~i~~|_V_GS(th)<br>~~i~~|_V_DS=_V_GS,_I_D=-110 µA|-1.4|-1.0|-0.7||
||N<br>~~i~~<br>ie||_V_DS=_V_GS,_I_D=110 µA|0.8<br>~~tf~~|1.1<br>~~tf~~|1.4<br>~~tf~~||
|Zero gate voltage drain current|P<br>~~|~~<br>ie|_I_DSS<br>~~| it~~<br>~~ep~~|_V_DS=-20 V,_V_GS=0 V,<br>_T_j=25 °C<br>~~it~~|-<br>~~it~~<br>~~tf~~|-<br>~~it~~<br>~~tf~~|-0.1<br>~~it~~<br>~~tf~~|µA|
||N<br>ie||_V_DS=20 V,_V_GS=0 V,<br>_T_j=25 °C|-<br>~~tf~~|-<br>~~tf~~|0.1<br>~~tf~~||
||P<br>~~ee~~||_V_DS=-20 V,_V_GS=0 V,<br>_T_j=175 °C<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|-50||
||N<br>~~ee~~<br>~~ep~~||_V_DS=20 V,_V_GS=0 V,<br>_T_j=175 °C<br>~~ee ~~<br>~~ep~~|-<br> ~~ee ~~<br>~~ep~~|-<br> ~~ee~~<br>~~ep~~|50<br>~~ep~~||
|Gate-source leakage current|P<br>~~oe~~|_I_GSS<br>~~oe~~|_V_GS=±12 V,_V_DS=0 V<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|±100<br>~~ee~~|nA|
||N<br>~~oe~~|||||||
|Drain-source on-state<br>resistance|P<br>~~Pit~~|_R_DS(on)<br>~~Pit~~<br>~~Pit~~<br>|_V_GS=-2.5 V,<br>_I_D=2.1 A<br>~~Pit~~|-<br>~~Pit~~|144<br>~~Pit~~|310<br>~~Pit~~|mW|
||N<br>~~es~~||_V_GS=2.5 V,_I_D=1.9 A<br>|-<br>|63<br>|95<br>||
||P<br>~~Pit~~||_V_GS=-4.5 V,_I_D=-3.2 A<br>~~Pit~~|-<br>~~Pit~~|95<br>~~Pit~~|150<br>~~Pit~~||
||N<br>~~Oe ~~||_V_GS=4.5 V,_I_D=5.1 A<br> ~~es~~|-<br>~~es~~|41<br>~~es~~|55<br>~~es~~||
|Transconductance|P<br>~~eee~~|_g_fs<br>~~eee~~||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=-2.2 A<br>~~eee~~|4<br>~~eee~~|7.9<br>~~eee~~|-<br>~~eee~~|S|
||N<br>~~eee~~<br>~~Eto~~|||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=3.6 A<br>~~eee~~<br>~~|~~|5.5<br>~~eee~~<br>~~tf~~|11<br>~~eee~~<br>~~tf~~|-<br>~~eee~~<br>~~tf~~||



2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air. 

Rev 2.03 

page 2 

2016-10-04 

**BSZ215C H** 

|**Parameter**||**Symbol **|**Conditions**|**Values**|**Unit**|
|---|---|---|---|---|---|
|||||**min.**<br>**typ.**<br>**max.**||
|**Dynamic characteristics**<br>Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delay time<br>Rise time|P<br>_C_iss<br>N<br>P<br>_C_oss<br>N<br>P<br>Crss<br>N<br>P<br>_t_d(on)<br>N<br>P<br>_t_r<br>N<br>~~a~~<br>~~-~~<br>~~fp~~<br>~~**a**~~<br>~~**a**~~<br>~~4~~<br>~~a~~||-<br>300<br>400<br>-<br>315<br>419<br>-<br>92<br>120<br>-<br>114<br>152<br>-<br>92<br>140<br>-<br>16<br>24<br>-<br>7.4<br>-<br>-<br>4.9<br>-<br>-<br>3.7<br>-<br>-<br>2.0<br>-<br>_V_GS=0 V,<br>P:_V_DS=-10 V,<br>N:_V_DS= 10 V,<br>_f_=1 MHz<br>P:_V_DD=-10 V,<br>_V_GS=-4.5 V,_R_G=6W,<br>_I_D=-3.2 A<br>~~ft~~<br>~~of~~<br>~~>~~<br>~~**Ff**~~<br>~~f~~<br>~~|~~<br>~~|~~<br>~~Ff~~<br>~~**F**f~~<br>~~f~~||pF<br>ns|
|Turn-off delay time|P<br>a|_t_d(off)|N:_V_DD=10 V,|-<br>11.3<br>-<br>=10 V,<br>~~Ff~~||
|Fall time|N<br>P<br>~~a~~<br>a|_t_f|_V_GS=4.5 V,_R_G=6W,<br>_I_D=5.1 A|-<br>12.2<br>-<br>-<br>4.7<br>-<br>~~Ff~~<br>~~Ff~~||
||N<br>~~a~~|||-<br>1.4<br>-<br>~~Ff~~||
|Gate Charge Characteristics||||||
|Gate to source charge|P|_Q_gs||-<br>-0.58<br>-0.8|nC|
|Gate to drain charge||_Q_gd|_V_DD=-10 V,<br>_I_D=-3.2 A,|-<br>-1.3<br>-1.7||
|Switching charge||_Q_g|_V_GS=0 to -4.5 V|-<br>-3.0<br>-4.6||
|Gate plateau voltage||_V_plateau||-<br>-1.9<br>-||
|Gate to source charge|N|_Q_gs||-<br>0.7<br>1.0||
|Gate to drain charge||_Q_gd|_V_DD=10 V,<br>_I_D=5.1 A,|-<br>0.4<br>-||
|Switching charge||_Q_g|_V_GS=0 to 4.5 V|2.1<br>2.8||
|Gate plateau voltage||_V_plateau||2.3||



Rev 2.03 

page 3 

2016-10-04 

**BSZ215C H** 

|Diode continuous forward current|P<br>~~a~~|_I_S|_T_C=25 °C|-<br>~~Py~~|-<br>~~Py~~|-2.1<br>~~Py~~|A|
|---|---|---|---|---|---|---|---|
||N|||||2.3||
|Diode pulse current|P|_I_S,pulse||-|-|-13||
||N<br>~~a~~|||~~PT~~|~~PT~~|20<br>~~PT~~||
|Diode forward voltage|P<br>~~ia~~|_V_SD<br>~~ia~~<br>~~Pf~~<br>~~4~~|_V_GS=0 V,_I_F=3.2 A,<br>_T_j=25 °C<br>~~ia~~|-<br>~~ia~~|-0.98<br>~~ia~~|-1.2<br>~~ia~~|V|
||N<br>~~ia~~<br>~~Pf~~<br>~~4~~||_V_GS=0 V,_I_F=5.1 A,<br>_T_j=25 °C<br>~~ia~~<br>~~Pf~~|-<br>~~ia~~<br>~~Pf~~<br>|0.9<br>~~ia~~<br>~~Pf~~<br>|1.2<br>~~ia~~<br>~~Pf~~<br>~~=~~||
|Reverse recovery time|P<br>~~F~~<br>~~4~~|_t_rr<br>~~F~~<br>~~4~~|_V_R=±10 V,_I_F=_I_S,<br>d_i_F/d_t_=100 A/µs|~~et~~|12.2<br>~~et~~|~~et=~~|ns|
||N<br>~~F~~<br>~~4~~|||-<br>~~et~~|10.9<br>~~et~~|-<br>~~et=~~||
|Reverse recovery charge|P<br>~~4~~|_Q_rr<br>~~4~~||~~Pf~~|4.6<br><br>~~Pf~~|~~=~~<br>~~Pf~~|nC|
||N<br>~~4~~<br>~~|~~|||-<br><br>~~Pt~~|3.4<br><br>~~Pt~~|-<br>~~=~~<br>~~Pt~~||



Rev 2.03 

page 4 

2016-10-04 

**BSZ215C H** 

## **1 Power dissipation (P)** 

_P_ tot=f( _T_ A) 

## **2 Power dissipation (N)** 

_P_ tot=f( _T_ A) 

**==> picture [445 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
3 3<br>2.5 2.5<br>2 2<br>1.5 1.5<br>1 1<br>0.5 0.5<br>0 0<br>0 40 80 120 160 0 40 80 120 160<br>T A [°C]  T A [°C]<br> [W]   [W]<br>tot tot<br>P P<br>**----- End of picture text -----**<br>


## **3 Drain current (P)** 

_I_ D=f( _T_ A) 

parameter: _V_ GS≤-4.5 V 

## **4 Drain current (N)** 

_I_ D=f( _T_ A) parameter: _V_ GS≥4.5 V 

**==> picture [445 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.5 5.5<br>5<br>—-<br>3<br>4.5<br>2.5 4<br>3.5<br>2 -<br>3<br>- 2.5<br>1.5<br>2<br>1 \-<br>1.5<br>1<br>0.5<br>0.5<br>|<br>0 0<br>0 40 80 120 160 0 40 80 120 160<br>T A [°C]  T A [°C]<br> [A]  -I D  [A]  I D<br>**----- End of picture text -----**<br>


Rev 2.03 

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2016-10-04 

**BSZ215C H** 

## **5 Safe operating area (P)** 

_I_ D=f( _V_ DS); _T_ A=25 °C; _D_ =0 parameter: _t_ p 

**==> picture [227 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [2]<br>1 µs<br>10 [1 ]<br>10 µs<br>100 µs<br>1 ms<br>10 ms<br>10 [0 ]<br>DC<br>10 [-1]<br>10 [-2 ]<br>10 [-1 ] 10 [1 ] 10 [2 ]<br>-V DS [V]<br> [A]<br>D<br>-I<br>**----- End of picture text -----**<br>


## **7 Max. transient thermal impedance (P)** 

_Z_ thJA=f( _t_ p) 

parameter: _D_ = _t_ p/ _T_ 

**==> picture [225 x 268] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [2 ]<br>0.5<br>0.2<br>10 [1 ]<br>0.1<br>0.05<br>0.02<br>0.01<br>single pulse<br>10 [0 ]<br>10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10<br>t p [s]<br> [K/W]<br>thJA<br>Z<br>**----- End of picture text -----**<br>


## **6 Safe operating area (N)** 

_I_ D=f( _V_ DS); _T_ A=25 °C; _D_ =0 

parameter: _t_ p 

**==> picture [226 x 235] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 µs<br>10 µs<br>10 [1 ]<br>100 µs<br>1 ms<br>10 ms<br>10 [0 ]<br>DC<br>10 [-1 ]<br>10 [-2 ]<br>10 [-1 ] 10 [0 ] 10 [1 ] 10<br>V DS [V]<br> [A]<br>I D<br>**----- End of picture text -----**<br>


## **8 Max. transient thermal impedance (N)** 

_Z_ thJA=f( _t_ p) 

parameter: _D_ = _t_ p/ _T_ 

**==> picture [226 x 268] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [2 ]<br>0.5<br>0.2<br>10 [1 ]<br>0.1<br>0.05<br>0.02<br>0.01<br>single pulse<br>10 [0 ]<br>10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10<br>t p [s]<br> [K/W]<br>thJA<br>Z<br>**----- End of picture text -----**<br>


Rev 2.03 

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2016-10-04 

**BSZ215C H** 

## **9 Typ. output characteristics (P)** 

_I_ D=f( _V_ DS); _T_ j=25 °C 

parameter: _V_ GS 

## **10 Typ. output characteristics (N)** 

_I_ D=f( _V_ DS); _T_ j=25 °C 

parameter: _V_ GS 

**==> picture [467 x 643] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 20<br>4.5 V<br>10 V<br>10 V<br>18 4.5 V  18 3.5 V<br>3 V<br>16 3.3 V  16<br>14 14<br>12 3 V  12<br>10 10<br>2.5 V<br>8 8 2.5 V<br>2.3 V<br>6 6<br>2.3 V<br>4 2 V  4<br>1.8 V<br>2 2 2 V<br>1.8 V<br>0 0<br>0 1 2 3 0 1 2 3<br>V DS [V]  VDS [V]<br>11 Typ. drain-source on resistance (P) 12 Typ. drain-source on resistance (N)<br>R  DS(on)=f( I  D);  T  j=25 °C R  DS(on)=f( I  D);  T  j=25 °C<br>parameter:  V  GS parameter:  V  GS<br>280 120<br>240<br>100<br>1.8 V<br>2.2 V<br>200<br>2 V  80<br>2.2 V<br>160 2.5 V<br>2.5 V<br>3 V  60<br>3 V<br>120<br>3.3 V<br>3.5 V<br>4.5 V  4.5 V<br>40<br>6 V<br>80 6 V<br>20<br>40<br>0 ae 0<br>0 2 4 6 8 0 2 4 6 8<br>I D [A]  I D [A]<br>Rev 2.03 page 7<br> [A]  I D ID [A]<br>]<br>] W W<br> [m  [m<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


Rev 2.03 

2016-10-04 

**BSZ215C H** 

## **13 Typ. transfer characteristics (P)** 

_I_ D=f( _V_ GS); | _V_ DS |>2 | ID| RDS(on)max parameter: _T_ j 

## **14 Typ. transfer characteristics (N)** 

_I_ D=f( _V_ GS); _|V DS  |>2 | I D | R DS(on)max_ parameter: _T_ j 

**==> picture [470 x 592] intentionally omitted <==**

**----- Start of picture text -----**<br>
6 6<br>5 5<br>4 | 4 |<br>3 3<br>2 2<br>175 °C<br>1 25 °C  1 175 °C<br>25 °C<br>0 Ai 0 g<br>0 1 2 3 0 1 2 3<br>-V GS [V]  V GS [V]<br>15 Drain-source on-state resistance (P) 16 Drain-source on-state resistance (N)<br>R  DS(on)=f( T  j);  I  D=-3.2 A;  V  GS=-4.5 V R  DS(on)=f( T  j);  I  D=5.1A;  V  GS=4.5 V<br>240 100<br>90<br>200<br>80<br>70<br>160 max<br>60 max<br>120 50<br>typ  typ<br>40<br>80<br>30<br>20<br>40<br>10<br>0 eae 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br> [A]   [A]<br>-I D I D<br>]  ]<br>W W<br>[m  [m<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


**==> picture [268 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
T j [°C]  T j [°C]<br>**----- End of picture text -----**<br>


Rev 2.03 

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2016-10-04 

**BSZ215C H** 

## **17 Typ. gate threshold voltage (P)** 

_V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=-110 µA 

## **18 Typ. gate threshold voltage (N)** 

_V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=110 µA 

**==> picture [470 x 587] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.6 1.6<br>max<br>max<br>1.2 1.2<br>typ<br>typ<br>p ee ] B R min  E A<br>0.8 min  0.8<br>0.4 0.4<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C]  T j [°C]<br>19 Typ. capacitances (P) 20 Typ. capacitances (N)<br>C  =f( V  DS);  V  GS=0 V;  f  =1 MHz C  =f( V  DS);  V  GS=0 V;  f  =1 MHz<br>10 [3 ] 10 [3 ]<br>Ciss<br>Ciss<br>Coss<br>10 [2 ]<br>Coss<br>10 [2 ]<br>Crss<br>Crss<br>10 [1 ]<br>10 [1 ] ro 10 [0 ] Ae<br>0 10 20 0 5 10 15 20<br>-V DS [V]  V DS [V]<br> [V]   [V]<br>GS(th) GS(th)<br>-V V<br> [pF]   [pF]<br>C C<br>**----- End of picture text -----**<br>


Rev 2.03 

page 9 

2016-10-04 

**BSZ215C H** 

## **21 Forward characteristics of reverse diode (P)** 

_I_ F=f( _V_ SD) 

parameter: _T_ j 

## **22 Forward characteristics of reverse diode (N)** 

_I_ F=f( _V_ SD) parameter: _T_ j 

**==> picture [465 x 610] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [1 ] 10 [1 ]<br>25 °C<br>175 °C  175 °C<br>25 °C<br>10 [0 ] 10 [0 ]<br>max, 175°C<br>10 [-1 ] 10 [-1 ]<br>175 °C, max<br>max, 25 °C<br>25 °C, max<br>IE<br>10 [-2 ] 10 [-2 ]<br>0 0.5 1 1.5 2 0 0.4 0.8 1.2 1.6<br>-V SD [V]  V SD [V]<br>23 Avalanche characteristics (P) 24 Avalanche characteristics (N)<br>=f( t  AV); );  R  GS=25 W=25 WW I  AS=f( t  AV);  R  GS=25 W<br>parameter:  T  j(start) parameter:  T  j(start)<br>10 [1 ] 10 [1 ]<br>25 °C<br>25 °C  100 °C<br>100 °C  150 °C<br>150 °C<br>10 [0 ] 10 [0 ]<br>10 [-1 ] 10 [-1 ]<br>10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ] 10 [0 ] 10 [1 ] 10 [2 ] 10<br>t AV [µs]  t AV [µs]<br> [A]  -I F  [A]  I F<br> [A]   [A]<br>-I AV I AV<br>**----- End of picture text -----**<br>


## **23 Avalanche characteristics (P)** 

_I_ AS=f( _t_ AV); ); _R_ GS=25 W=25 WW parameter: _T_ j(start) 

Rev 2.03 

page 10 

2016-10-04 

**BSZ215C H** 

## **25 Typ. gate charge (P)** 

_V_ GS=f( _Q_ gate); _I_ D=-3.2A pulsed parameter: _V_ DD 

## **26 Typ. gate charge (N)** 

_V_ GS=f( _Q_ gate); _I_ D=5.1A pulsed parameter: _V_ DD 

**==> picture [465 x 610] intentionally omitted <==**

**----- Start of picture text -----**<br>
6 6<br>5 5<br>-4 V  -16 V<br>4 V  10 V<br>-10 V<br>4 4<br>16 V<br>3 3<br>Uv<br>2 2<br>1 1<br>0 [ 0 ;Wi<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3<br>-Q gate [nC]  Q gate [nC]<br>27 Drain-source breakdown voltage (P) 28 Drain-source breakdown voltage (N)<br> BR(DSS)=f(=f( T  j); );  I  D=-250 µA=-250 µA V  BR(DSS)=f( T  j);  I  D=250 µA<br>25 25<br>24 24<br>23 23<br>22 22<br>21 21<br>20 20<br>19 19<br>18 18<br>17 17<br>16 16<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C]  T j [°C]<br> [V]   [V]<br>GS GS<br>-V V<br> [V]   [V]<br>BR(DSS) BR(DSS)<br>-V V<br>**----- End of picture text -----**<br>


## **27 Drain-source breakdown voltage (P)** 

_V_ BR(DSS)=f(=f( _T_ j); ); _I_ D=-250 µA=-250 µA 

Rev 2.03 

page 11 

2016-10-04 

**BSZ215C H** 

**Package Outline PG-TSDSON-8LTI** 

## **PG-TSDSON-8LTI : Outline** 

Dimensions in mm 

Rev 2.03 

page 12 

2016-10-04 

## BSZ215C H 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.3|2016-10-06|Update package drawing|



## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

13 



## Links

- [View this product on Novapart](https://novapart.co/products/BSZ215CHXTMA1/dual-mosfet-complementary-n-and-p-channel-20-v-51)
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- [Supplier page](https://es.farnell.com/infineon/bsz215chxtma1/mosfet-n-p-ch-20v-5-1a-tsdson/dp/4319317)
---

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