# Power MOSFET, N Channel, 100 V, 40 A, 9700 µohm, TSDSON, Surface Mount

![Product image](https://novapart.co/image/farnell:2725825/)

**URL**: https://novapart.co/products/BSZ097N10NS5ATMA1/power-mosfet-n-channel-100-v-40-a-9700-ohm-tsdson
**SKU**: BSZ097N10NS5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6240
**Stock**: 1000+
**Lead Time**: 358 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0083ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 5 |
| Qualification | - |
| Power Dissipation | 69W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TSDSON |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 40A |
| Drain Source On State Resistance | 9700µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725825/)

**BSZ097N10NS5** 

## **MOSFET** 

## **OptiMOS[TM]** 

## **Features** 

**==> picture [200 x 21] intentionally omitted <==**

**----- Start of picture text -----**<br>
* Optimized technology for DC/DC converters<br>« Excellent gate charge x R DS(on) product<br>**----- End of picture text -----**<br>


|**Parameter**<br>Table 1<br>Key Performance|**Value**<br>Performance Parameters|**Unit**<br>Parameters|
|---|---|---|
|_V_DS|100|V|
|_R_DS(on),max|9.7|mΩ|
|_I_D|40|A|



**==> picture [137 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
(enlarged source interconnection)<br>eo tz, ass,<br>. Ae<br>2™<br>D 3<br>S 1 8 D<br>S 2 | c 7 D<br>S 3 1 I h 6 D<br>G 4 5 D<br>**----- End of picture text -----**<br>


|~~Type/OrderingCode|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~|
|---|---|---|---|
|BSZ097N10NS5<br>~~Type/OrderingCode |~~|PG-TSDSON-8 FL<br>~~|~~<br>~~|~~|097N10N|-<br>~~Related Links~~|



1) J-STD20 and JESD22 

Final Data Sheet 

1 

**OptiMOS[TM] 5�Power-Transistor,�100�V BSZ097N10NS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 

Final Data Sheet 

2 

Rev.�2.3,��2017-01-26 

**OptiMOS[TM] 5�Power-Transistor,�100�V BSZ097N10NS5** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|40<br>39<br>11|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=60K/W1)|
|Pulsed drain current2)|_I_D,pulse|-|-|160|A|_T_C=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|97|mJ|_I_D=20A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|69<br>2.1|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=60K/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|1.1|1.8|K/W|-|
|Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|60|K/W|-|



> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 2) See Diagram 3 for more detailed information 

> 3) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.3,��2017-01-26 

**OptiMOS[TM] 5�Power-Transistor,�100�V BSZ097N10NS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|100|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.2|3.0|3.8|V|_V_DS=_V_GS,_I_D=36µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=100V,_V_GS=0V,_T_j=25°C<br>_V_DS=100V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|10.3<br>8.3|13.0<br>9.7|mΩ|_V_GS=6V,_I_D=5A<br>_V_GS=10V,_I_D=20A|
|Gate resistance1)|_R_G|-|1.2|1.8|Ω|-|
|Transconductance|_g_fs|23|46|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=20A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|1600|2080|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|250|325|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|12|21|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|11|-|ns|_V_DD=50V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=3Ω|
|Rise time|_t_r|-|5|-|ns|_V_DD=50V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=3Ω|
|Turn-off delay time|_t_d(off)|-|21|-|ns|_V_DD=50V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=3Ω|
|Fall time|_t_f|-|5|-|ns|_V_DD=50V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=3Ω|
|**Table6Gatechargecharacteristics2)**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|7|-|nC|_V_DD=50V,_I_D=20A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|4|-|nC|_V_DD=50V,_I_D=20A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|5|8|nC|_V_DD=50V,_I_D=20A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|7|-|nC|_V_DD=50V,_I_D=20A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|22|28|nC|_V_DD=50V,_I_D=20A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.6|-|V|_V_DD=50V,_I_D=20A,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|30|40|nC|_V_DD=50V,_V_GS=0V|



> 1) Defined by design. Not subject to production test 

> 2) See ″ Gate charge waveforms ″ for parameter definition 

Final Data Sheet 

Rev.�2.3,��2017-01-26 

4 

**OptiMOS[TM] 5�Power-Transistor,�100�V BSZ097N10NS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|40|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|160|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.9|1.2|V|_V_GS=0V,_I_F=20A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|43|85|ns|_V_R=50V,_I_F=20A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|60|120|nC|_V_R=50V,_I_F=20A,d_i_F/d_t_=100A/µs|



1) Defined by design. Not subject to production test Final Data Sheet 

Rev.�2.3,��2017-01-26 

5 

**OptiMOS[TM] BSZ097N10NS5** 

**==> picture [539 x 633] intentionally omitted <==**

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Final Data Sheet 

6 

**OptiMOS[TM]** 5 Power-Transistor, 100 V **BSZ097N10NS5** 

**==> picture [528 x 633] intentionally omitted <==**

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Final Data Sheet 

7 

**OptiMOS[TM] BSZ097N10NS5** 

**==> picture [528 x 282] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 4.0<br>3.5<br>360 µA<br>I<br>15 3.0<br>36 µA<br>TLE LEAKELoKM ) 2.5 PL E RE™e’v N TA<br>max<br>10 KK gs 2.0  OS:<br>Typ<br>fle ELELLI) 1.5 6 LELEEL EEL.<br>ATIF<br>5 LL ELL} 1.0 LELEELEEL EEL<br>0.5<br>0 0.0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>**----- End of picture text -----**<br>


**==> picture [527 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
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Final Data Sheet 

8 

**OptiMOS[TM] BSZ097N10NS5** 

**==> picture [536 x 634] intentionally omitted <==**

**----- Start of picture text -----**<br>
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Final Data Sheet 

9 

**OptiMOS[TM] BSZ097N10NS5** 

Final Data Sheet 

10 

**OptiMOS[TM] BSZ097N10NS5** 

## BSZ097N10NS5 

## Previous Revision 

|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.1|2014-05-05|Release of Final Version|
|2.2|2016-09-23|Update Avalanche Energy|
|2.3|2017-01-26|Update Id at Tc=100°C and Ta=25°C|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

11 



## Links

- [View this product on Novapart](https://novapart.co/products/BSZ097N10NS5ATMA1/power-mosfet-n-channel-100-v-40-a-9700-ohm-tsdson)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/bsz097n10ns5atma1/mosfet-n-ch-100v-40a-tsdson/dp/2725825)
---

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