# Dual MOSFET, N Channel, 30 V, 30 V, 20 A, 20 A, 0.018 ohm

![Product image](https://novapart.co/image/farnell:2771840RL/)

**URL**: https://novapart.co/products/BSZ0909NDXTMA1/dual-mosfet-n-channel-30-v-20-a-0018-ohm
**SKU**: BSZ0909NDXTMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.2730
**Stock**: 10+

## Description

Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | WISON |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 20A |
| Power Dissipation N Channel | 17W |
| Power Dissipation P Channel | 17W |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 30V |
| Continuous Drain Current Id N Channel | 20A |
| Continuous Drain Current Id P Channel | 20A |
| Drain Source On State Resistance N Channel | 0.018ohm |
| Drain Source On State Resistance P Channel | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2771840RL/)

**BSZ0909ND** 

## **MOSFET** 

## **Features** 

|**Parameter**|**Value**|**Unit**|
|---|---|---|
|_V_DS|30|V|
|_R_DS(on),max|18|mΩ|
|_I_D|20|A|
|_Q_OSS|2.3|nC|
|_Q_G(0V..4.5V)|1.8|nC|



|~~Type/OrderingCode~~<br>~~|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~|
|---|---|---|---|
|BSZ0909ND<br>~~Type/OrderingCode~~<br>~~|~~|PG-WISON-8<br>~~|~~<br>~~|~~|0909ND|-<br>~~Related Links~~|



Final Data Sheet 

1 

**PowerStage�3x3 BSZ0909ND** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 

Final Data Sheet 

2 

Rev.�2.0,��2016-12-05 

**PowerStage�3x3 BSZ0909ND** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ j=25�°C,�unless�otherwise�specified,�one�transistor�active 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-<br>-|-<br>-<br>-<br>-|20<br>8.1<br>5.5<br>4.1|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_A=25°C1)<br>_V_GS=4.5V,_T_A=70°C1)<br>_V_GS=4.5V,_T_A=25°C2)|
|Pulsed drain current3)|_I_D,pulse|-|-|40|A|_T_C=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|4|mJ|_I_D=9A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|17<br>1.9|-<br>-|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=65°C/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|7.5|°C/W|-|
|Device on PCB,<br>minimal footprint|_R_thJA|-|-|180|°C/W|-|
|Device on PCB,<br>6 cm2cooling area|_R_thJA|-|-|65|°C/W|-|



> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 2) device mounted on a minimum pad (one layer, 70 µm thick) 

> 3) See Diagram 3 for more detailed information 

Final Data Sheet 

3 

Rev.�2.0,��2016-12-05 

**PowerStage�3x3 BSZ0909ND** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|30|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.2|1.6|2|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>-|1<br>100|µA|_V_DS=30V,_V_GS=0V,_T_j=25°C<br>_V_DS=30V,_V_GS=0V,_T_j=150°C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|20<br>14.5|25<br>18|mΩ|_V_GS=4.5V,_I_D=9A<br>_V_GS=10V,_I_D=9A|
|Gate resistance1)|_R_G|3.5|7|14|Ω|-|
|Transconductance|_g_fs|-|22|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=9A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|270|360|pF|_V_GS=0V,_V_DS=15V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|88|120|pF|_V_GS=0V,_V_DS=15V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|11|-|pF|_V_GS=0V,_V_DS=15V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|5|-|ns|_V_DD=15V,_V_GS=10V,_I_D=9A,<br>_R_G,ext=6Ω|
|Rise time|_t_r|-|2.5|-|ns|_V_DD=15V,_V_GS=10V,_I_D=9A,<br>_R_G,ext=6Ω|
|Turn-off delay time|_t_d(off)|-|15|-|ns|_V_DD=15V,_V_GS=10V,_I_D=9A,<br>_R_G,ext=6Ω|
|Fall time|_t_f|-|2|-|ns|_V_DD=15V,_V_GS=10V,_I_D=9A,<br>_R_G,ext=6Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|0.8|-|nC|_V_DD=15V,_I_D=9A,_V_GS=0to4.5V|
|Gate charge at threshold|_Q_g(th)|-|0.4|-|nC|_V_DD=15V,_I_D=9A,_V_GS=0to4.5V|
|Gate to drain charge|_Q_gd|-|0.5|-|nC|_V_DD=15V,_I_D=9A,_V_GS=0to4.5V|
|Switchingcharge|_Q_sw|-|0.8|-|nC|_V_DD=15V,_I_D=9A,_V_GS=0to4.5V|
|Gate charge total|_Q_g|-|1.8|2.6|nC|_V_DD=15V,_I_D=9A,_V_GS=0to4.5V|
|Gate plateau voltage|_V_plateau|-|2.8|-|V|_V_DD=15V,_I_D=9A,_V_GS=0to4.5V|
|Gate charge total|_Q_g|-|3.7|5.2|nC|_V_DD=15V,_I_D=9A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|1.5|-|nC|_V_DS=0.1V,_V_GS=0to4.5V|
|Output charge|_Q_oss|-|2.3|-|nC|_V_DD=15V,_V_GS=0V|



> 1) Defined by design. Not subject to production test. 

> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet 

Rev.�2.0,��2016-12-05 

4 

**PowerStage�3x3 BSZ0909ND** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|17|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|40|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.92|1.2|V|_V_GS=0V,_I_F=9A,_T_j=25°C|
|Reverse recoverycharge|_Q_rr|-|5|-|nC|_V_R=15V,_I_F=9A,d_i_F/d_t_=400A/µs|



Final Data Sheet 

Rev.�2.0,��2016-12-05 

5 

**BSZ0909ND** 

**==> picture [528 x 633] intentionally omitted <==**

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Final Data Sheet 

6 

**BSZ0909ND** 

**==> picture [526 x 633] intentionally omitted <==**

**----- Start of picture text -----**<br>
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Final Data Sheet 

7 

**BSZ0909ND** 

**==> picture [528 x 633] intentionally omitted <==**

**----- Start of picture text -----**<br>
30 2.5<br>ood<br>OO<br>Ja OO<br>7 OO<br>2.0<br>a<br>=e<br>Lo a<br>20<br>max<br>7A 1.5 Ds<br>a v esSfaa<br>ZS typ FeSO<br>Bp a<br>1.0<br>ee ed<br>10 — OO<br>OO<br>OO<br>OO<br>0.5<br>FeO EEE<br>FR RTT<br>Se eedEE<br>OO<br>FRO<br>0 0.0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS I D<br>10 [3] 10 [2]<br>L_ —|- —- }L— —__—_}<br>a 25 °C | | |<br>150 °C<br>De | oee o<br>Ciss<br>eS : Pp<br>PN TLD t tt<br>H e<br>Coss<br>PPE tt tt tt<br>10 [2]<br>_ | Peet | Saeco<br>-/_——- ES We<br>SS ReCe<br>IN] 7<br>[ok 10 [1] f<br>Ir} P| ae<br>Crss<br>SL———_ YeOO<br>10 [1] _————__——_—_—— | | [| | | [| tf [ft te<br>a se ee es es / |<br>10 [0] 10 [0]<br>0 5 10 15 20 25 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>V DS [V] V SD [V]<br>C =f( V DS V GS f I F=f( V SD T j<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>C I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**BSZ0909ND** 

**==> picture [524 x 634] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [1] 12<br>15 V<br>10<br>25 °C 6 V<br>NUM eco | oe<br>100 °C 24 V<br>NUN TINE tT y 4,<br>8<br>UN 125 °C ONHIING TTT Sea<br>10 [0] 6<br>c WWN ONL fe SO<br>EHP<br>4<br>LUCoMPETTINGSSSTENTNu || = EL LSY v<br>2<br>Ni Y T) ft ty<br>10 [-1] 0<br>\ fi | | | | | | |<br>10 [0] 10 [1] 10 [2] 10 [3] 0 1 2 3 4<br>t AV [us] Q gate [nC]<br>I AS=f( t AV )} R GS =25 Ω  ; parameter: T j(start) V GS=f( Q gate ); I D =9 A pulsed; parameter: V DD<br>Plagram 1; Drain-source breakdown voltage pT Gate charge waveforms<br>34<br>i<br>a a Ves<br>32 ia<br>ii Q Q<br>cl<br>30<br>a<br>iI cs sO<br>28 ce<br>aa<br>a<br>a<br>26<br>i<br>a<br>a<br>i<br>24<br>a<br>i<br>22 aa re; Qgae<br>a<br>a<br>20 = Qys Oye<br>-60 -20 20 60 100 140 180<br>T j<br>V BR(DSS)=f( T j I D po<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


**==> picture [265 x 14] intentionally omitted <==**

**----- Start of picture text -----**<br>
pT Gate charge waveforms<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**BSZ0909ND** 

Final Data Sheet 

10 

**BSZ0909ND** 

## BSZ0909ND 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2016-12-05|Release of final version|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

11 



## Links

- [View this product on Novapart](https://novapart.co/products/BSZ0909NDXTMA1/dual-mosfet-n-channel-30-v-20-a-0018-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/bsz0909ndxtma1/mosfet-dual-n-ch-30v-20a-wison/dp/2771840RL)
---

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