# Power MOSFET, N Channel, 60 V, 40 A, 6500 µohm, TSDSON-FL, Surface Mount

![Product image](https://novapart.co/image/farnell:3227621RL/)

**URL**: https://novapart.co/products/BSZ065N06LS5ATMA1/power-mosfet-n-channel-60-v-40-a-6500-ohm-tsdson
**SKU**: BSZ065N06LS5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4260
**Stock**: 10+
**Lead Time**: 358 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 5 |
| Qualification | - |
| Power Dissipation | 46W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 46W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0054ohm |
| Transistor Case Style | TSDSON-FL |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 40A |
| Drain Source On State Resistance | 6500µohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3227621RL/)

**BSZ065N06LS5** 

## **MOSFET** 

## **OptiMOS[TM]** 

## **Features** 

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1)<br>**----- End of picture text -----**<br>


|**Parameter**|**Value**|**Unit**|
|---|---|---|
|_V_DS|60|V|
|_R_DS(on),max|6.5|mΩ|
|_I_D|40|A|
|_Q_OSS|19|nC|
|_Q_G(0V..4.5V)|10|nC|



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|~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links|
|---|---|---|---|
|BSZ065N06LS5<br>~~Type/OrderingCode |~~|PG-TSDSON-8 FL<br>~~|~~|065N06L<br>|-<br>|



1) J-STD20 and JESD22 

Final Data Sheet 

1 

**OptiMOS[TM] �Power-Transistor,�60�V BSZ065N06LS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 

Final Data Sheet 

2 

Rev.�2.2,��2016-08-10 

**OptiMOS[TM] �Power-Transistor,�60�V BSZ065N06LS5** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|40<br>40<br>14|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=60K/W1)|
|Pulsed drain current2)|_ID,pulse_|-|-|160|A|_T_C=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|38|mJ|_I_D=20A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|46<br>2.1|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=60K/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|1.6|2.7|K/W|-|
|Device on PCB,<br>minimal footprint|_R_thJA|-|-|62|K/W|-|
|Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|60|K/W|-|



> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 2) See Diagram 3 for more detailed information 

> 3) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.2,��2016-08-10 

**OptiMOS[TM] �Power-Transistor,�60�V BSZ065N06LS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|60|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.1|1.7|2.3|V|_V_DS=_V_GS,_I_D=20µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=60V,_V_GS=0V,_T_j=25°C<br>_V_DS=60V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|5.4<br>7.3|6.5<br>9.4|mΩ|_V_GS=10V,_I_D=20A<br>_V_GS=4.5V,_I_D=10A|
|Gate resistance1)|_R_G|-|1.2|1.8|Ω|-|
|Transconductance|_g_fs|25|50|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=20A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|1400|1800|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|300|390|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|16|28|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|5.0|-|ns|_V_DD=30V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|2.9|-|ns|_V_DD=30V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|14|-|ns|_V_DD=30V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|2.6|-|ns|_V_DD=30V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|**Table6Gatechargecharacteristics2)**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|4.1|-|nC|_V_DD=30V,_I_D=20A,_V_GS=0to4.5V|
|Gate charge at threshold|_Q_g(th)|-|2.3|-|nC|_V_DD=30V,_I_D=20A,_V_GS=0to4.5V|
|Gate to drain charge1)|_Q_gd|-|3.3|4.9|nC|_V_DD=30V,_I_D=20A,_V_GS=0to4.5V|
|Switchingcharge|_Q_sw|-|5.1|-|nC|_V_DD=30V,_I_D=20A,_V_GS=0to4.5V|
|Gate charge total1)|_Q_g|-|10|13|nC|_V_DD=30V,_I_D=20A,_V_GS=0to4.5V|
|Gate plateau voltage|_V_plateau|-|2.9|-|V|_V_DD=30V,_I_D=20A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|18|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|19|26|nC|_V_DD=30V,_V_GS=0V|



> 1) Defined by design. Not subject to production test 

> 2) See ″ Gate charge waveforms ″ for parameter definition 

Final Data Sheet 

Rev.�2.2,��2016-08-10 

4 

**OptiMOS[TM] �Power-Transistor,�60�V BSZ065N06LS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|39|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|156|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.83|1.2|V|_V_GS=0V,_I_F=20A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|18|36|ns|_V_R=30V,_I_F=20_A_,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|7|14|nC|_V_R=30V,_I_F=20_A_,d_i_F/d_t_=100A/µs|



1) Defined by design. Not subject to production test Final Data Sheet 

Rev.�2.2,��2016-08-10 

5 

**OptiMOS[TM] BSZ065N06LS5** 

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Final Data Sheet 

6 

**OptiMOS[TM] BSZ065N06LS5** 

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Final Data Sheet 

7 

**OptiMOS[TM] BSZ065N06LS5** 

**==> picture [528 x 282] intentionally omitted <==**

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Final Data Sheet 

8 

**OptiMOS[TM] BSZ065N06LS5** 

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Gate charge waveforms<br>**----- End of picture text -----**<br>


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70 fF | | | | | | | | | | ft<br>fF | | | | | | | | tf ft [|<br>| | | | | | | [| | Ff ft [|<br>66 fTP|| |[| || || || || [|| || || |]ft {|<br>Fr | | | | | | | ft ft fl<br>Ft | | | fl | ld] ld]lcdp hr<br>62 | [| | | | | | [ot |<br>S | | [| | | | Per] | [ [|<br>c. |P| | Pppee<br>58 |m7]|prt|| eT| || tT|tl lmdtl |  lcdtl |  htlhd|l ld]TTTTtlt<br>fF | | | | | | | | tf ft [|<br>| | | | | | | [| | Ff ft [|<br>54 fTP|| |[| || || || || [|| || || |]ft {|<br>oe<br>Fr | | | | | | | ft ft fl<br>50 | | | | | | | | | ft ft ft |<br>-60 -20 20 60 100 140 180<br>T j<br>V BR(DSS)=f( T j I D<br>[°C]<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**OptiMOS[TM] BSZ065N06LS5** 

Final Data Sheet 

10 

## **OptiMOS[TM] BSZ065N06LS5** 

## BSZ065N06LS5 

## Previous Revision 

|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.0|2016-03-21|Release of final version|
|2.1|2016-04-07|Update Gate threshold voltage|
|2.2|2016-08-10|Update in Qrr and trr|



## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

11 



## Links

- [View this product on Novapart](https://novapart.co/products/BSZ065N06LS5ATMA1/power-mosfet-n-channel-60-v-40-a-6500-ohm-tsdson)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/bsz065n06ls5atma1/mosfet-n-ch-60v-150deg-c-46w/dp/3227621RL)
---

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