# Power MOSFET, N Channel, 60 V, 40 A, 4000 µohm, TSDSON-FL, Surface Mount

![Product image](https://novapart.co/image/farnell:3227620RL/)

**URL**: https://novapart.co/products/BSZ040N06LS5ATMA1/power-mosfet-n-channel-60-v-40-a-4000-ohm-tsdson
**SKU**: BSZ040N06LS5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5520
**Stock**: 1000+
**Lead Time**: 358 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 5 |
| Qualification | - |
| Power Dissipation | 69W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 69W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0033ohm |
| Transistor Case Style | TSDSON-FL |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 40A |
| Drain Source On State Resistance | 4000µohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3227620RL/)

**BSZ040N06LS5** EE Gifineon 

## **MOSFET OptiMOS[TM]** 

## **Features** 

* Qualified according to JEDEC 1) _ for target applications 

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8 7 6 5 5 6 sa 7 8<br>1 2 3 4 4 3 2 1<br>**----- End of picture text -----**<br>


|**Parameter**<br>~~Table 1__ Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|60|V|
|_R_DS(on),max|4.0|mΩ|
|_I_D|101|A|
|_Q_OSS|32|nC|
|_Q_G(0V..4.5V)|18|nC|



|~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links|
|---|---|---|---|
|BSZ040N06LS5<br>~~Type/OrderingCode |~~|PG-TSDSON-8 FL<br>~~|~~|040N06L<br>|-<br>|



1) J-STD20 and JESD22 

Final Data Sheet 

1 

**OptiMOS[TM] �Power-Transistor,�60�V BSZ040N06LS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 

Final Data Sheet 

2 

Rev.�2.3,��2021-02-11 

**OptiMOS[TM] �Power-Transistor,�60�V BSZ040N06LS5** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-<br>-|-<br>-<br>-|101<br>64<br>17|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=60K/W2)|
|Pulsed drain current3)|_ID,pulse_|-|-|404|A|_T_C=25°C|
|Avalanche energy, single pulse4)|_E_AS|-|-|117|mJ|_I_D=20A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|69<br>2.1|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=60K/W2)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|1.1|1.8|K/W|-|
|Device on PCB,<br>minimal footprint|_R_thJA|-|-|62|K/W|-|
|Device on PCB,<br>6 cm2cooling area2)|_R_thJA|-|-|60|K/W|-|



> 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 

> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 3) See Diagram 3 for more detailed information 

> 4) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.3,��2021-02-11 

**OptiMOS[TM] �Power-Transistor,�60�V BSZ040N06LS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|60|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.1|1.7|2.3|V|_V_DS=_V_GS,_I_D=36µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=60V,_V_GS=0V,_T_j=25°C<br>_V_DS=60V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|3.3<br>4.4|4.0<br>5.6|mΩ|_V_GS=10V,_I_D=20A<br>_V_GS=4.5V,_I_D=10A|
|Gate resistance1)|_R_G|-|1.6|2.4|Ω|-|
|Transconductance|_g_fs|32|65|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=20A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|2400|3100|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|500|650|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|25|44|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|8.5|-|ns|_V_DD=30V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|4.6|-|ns|_V_DD=30V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|25.6|-|ns|_V_DD=30V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|4.8|-|ns|_V_DD=30V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|6.6|-|nC|_V_DD=30V,_I_D=20A,_V_GS=0to4.5V|
|Gate charge at threshold|_Q_g(th)|-|3.9|-|nC|_V_DD=30V,_I_D=20A,_V_GS=0to4.5V|
|Gate to drain charge1)|_Q_gd|-|5.3|8.0|nC|_V_DD=30V,_I_D=20A,_V_GS=0to4.5V|
|Switchingcharge|_Q_sw|-|8.0|-|nC|_V_DD=30V,_I_D=20A,_V_GS=0to4.5V|
|Gate charge total1)|_Q_g|-|18|22|nC|_V_DD=30V,_I_D=20A,_V_GS=0to4.5V|
|Gate plateau voltage|_V_plateau|-|2.7|-|V|_V_DD=30V,_I_D=20A,_V_GS=0to4.5V|
|Gate charge total, sync. FET1)|_Q_g(sync)|-|32|42|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|32|42|nC|_V_DD=30V,_V_GS=0V|



> 1) Defined by design. Not subject to production test 

> 2) See ″ Gate charge waveforms ″ for parameter definition 

Final Data Sheet 

Rev.�2.3,��2021-02-11 

4 

**OptiMOS[TM] �Power-Transistor,�60�V BSZ040N06LS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|58|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|404|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.80|1.2|V|_V_GS=0V,_I_F=20A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|24|48|ns|_V_R=30V,_I_F=20_A_,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|11|22|nC|_V_R=30V,_I_F=20_A_,d_i_F/d_t_=100A/µs|



1) Defined by design. Not subject to production test Final Data Sheet 

Rev.�2.3,��2021-02-11 

5 

**OptiMOS[TM] BSZ040N06LS5** 

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Final Data Sheet 

6 

**OptiMOS[TM] BSZ040N06LS5** 

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Final Data Sheet 

7 

**OptiMOS[TM] BSZ040N06LS5** 

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10 [4] 10 [3]<br>_—— PSS 25 °C SESS EEE EEE EEEEEEPEELE<br>25 °C, max<br>es [| 150 °C EERE<br>ae S U 150 °C, max tertesssttteenes<br>Cs \ SITET TT TT ert<br>Ne Ciss TT T<br>10 [3] ne NE 10 [2] TT er<br>————Se UNTOaeUAUONEQUONEND?S <cA0TENIINee<br>ac Vo TN eeee eee<br>Coss<br>& \o0 eeeoo _«(Cdk SERLETTE EET ALAo ETE er<br>No ALLELEEEL LE EL<br>10 [2] PN | tf 10 [1] ALLELE<br>——————— SSceseseseasLLL LAL<br>— PERE EEEEEEEEEsessseseseesese=e<br>ee ee SER eeeEEE EEE<br>a ee ee eee PLEEELEL ELE EPIL LFA EEE<br>Crss<br>= PETE aT<br>10 [1] | | | [| 10 [0] TELLLEEEERLLTEEELLLEAL/<br>0 20 40 60 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**OptiMOS[TM] BSZ040N06LS5** 

**==> picture [526 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [2] 10<br>aeeE e e ee 9 TELEVAYj<br>ee el 8 EL ELL AAR y.<br>30 V<br>7<br>10 [1] 25 °C 12 V<br>CMS PU NT | ELE<br>100 °C 48 V<br>6<br>ee ee 125 °C IN NAT TT TTT TT Y<br>Ne |<br>5<br>2 coioh Natty |= y<br>Naa 4 Bae Ae<br>10 [0] PAIN EEE EAN] 7<br>3<br>a a ee ee ee ee ee<br>=e ra,<br>ee ee ee T ym EL<br>2<br>—}--A H HHtf 1 A TTAT<br>10 [-1] 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 5 10 15 20 25 30 35 40<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>I AV V GS<br>**----- End of picture text -----**<br>


—— **Diagram Gate charge waveforms** 

**==> picture [259 x 282] intentionally omitted <==**

**----- Start of picture text -----**<br>
70 fF | | | | | | | | | | ft<br>fF | | | | | | | | tf ft [|<br>| | | | | | | [| | Ff ft [|<br>66 fT | [| | | | | [| | | ft {|<br>P| | | | | | | | | |]<br>Fr | | | | | | | ft ft fl<br>Ft | | | fl | ld] ld]lcdp hr<br>62 | [| | | | | | [ot |<br>S | | [| | | | Per] | [ [|<br>c. |P| | Pppee<br>58 |m7]|prt|| eT| || tT|tl lmdtl |  lcdtl |  htlhd|l ld]TTTTtlt<br>fF | | | | | | | | tf ft [|<br>| | | | | | | [| | Ff ft [|<br>54 fTP|| |[| || || || || [|| || || |]ft {|<br>STEP<br>Fr | | | | | | | ft ft fl<br>50 | | | | | | | | | ft ft ft |<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**OptiMOS[TM] �Power-Transistor,�60�V BSZ040N06LS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **5�����Package�Outlines** 

**==> picture [187 x 203] intentionally omitted <==**

**==> picture [148 x 153] intentionally omitted <==**

**==> picture [148 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
NUMBER:PACKAGE - GROUP PG-TSDSON-8-U03<br>REVISION: 03 DATE: 20.10.2020<br>MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 0.90 1.10<br>b 0.24 0.44<br>c (0.20)<br>D 3.20 3.40<br>D1 2.19 2.39<br>D2 1.54 1.74<br>E 3.20 3.40<br>E1 2.01 2.21<br>E2 0.10 0.30<br>e 0.65<br>L 0.30 0.50<br>L1 0.40 0.60<br>L2 0.50 0.70<br>aaa 0.06<br>**----- End of picture text -----**<br>


## **Figure�1�����Outline�PG-TSDSON-8�FL,�dimensions�in�mm** 

Final Data Sheet 

10 

Rev.�2.3,��2021-02-11 

**OptiMOS[TM] BSZ040N06LS5** 

## BSZ040N06LS5 

## Previous Revision 

|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.0|2016-04-21|Release of final version|
|2.1|2016-08-10|Update in Qrr and trr|
|2.2|2020-05-18|Update Max Current Rating|
|2.3|2021-02-11|Update package drawing|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **Warnings** 

Final Data Sheet 

11 



## Links

- [View this product on Novapart](https://novapart.co/products/BSZ040N06LS5ATMA1/power-mosfet-n-channel-60-v-40-a-4000-ohm-tsdson)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/bsz040n06ls5atma1/mosfet-n-ch-60v-150deg-c-69w/dp/3227620RL)
---

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