# Power MOSFET, N Channel, 240 V, 260 mA, 6 ohm, SOT-89, Surface Mount

![Product image](https://novapart.co/image/farnell:2480657/)

**URL**: https://novapart.co/products/BSS87H6327FTSA1/power-mosfet-n-channel-240-v-260-ma-6-ohm-sot-89
**SKU**: BSS87H6327FTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1870
**Stock**: 1000+
**Lead Time**: 148 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:260mA; Drain Source Voltage Vds:240V; On Resistance Rds(on):3.9ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-89 |
| Drain Source Voltage Vds | 240V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 260mA |
| Drain Source On State Resistance | 6ohm |
| Gate Source Threshold Voltage Max | 1.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2480657/)

**BSS87** 

_**Rev. 2.0**_ 

## **SIPMOS Small-Signal-Transistor** 

**Feature** . N-Channel . Enhancement mode, Logic Level . dv/dt rated 

**Product Summary** _V_ DS 240 V P| _R_ 6 | DS(on) fa _I_ D 0.26 A ff 

Pb-free lead plating; RoHS compliant 

- Qualified according to AEC Q101 

- Halogen­free according to IEC61249­2­21 

**==> picture [94 x 68] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>2<br>3<br>2<br>VPS05558<br>**----- End of picture text -----**<br>


|**Maximum Ratings**, at _T_j= 25 °C, unless otherwise specified|= 25 °C, unless otherwise specified|= 25 °C, unless otherwise specified||
|---|---|---|---|
|j<br>**Parameter**|**Symbol**|**Value**|**Unit**|
|Continuous drain current<br>_T_A=25°C<br>_T_A=70°C|_I_D<br>pf|0.26<br>0.21<br>pf|A|
|Pulsed drain current<br>_T_A=25°C|_I_D puls|1.04||
|Reverse diode d_v_/d_t_<br>_I_S=0.26A,_V_DS=192V, d_i_/d_t_=200A/µs,_T_jmax=150°C|d_v_/d_t_|6|kV/µs|
|Gate source voltage|_V_GS<br>a|±20<br>|V|
|ESDclass (JESD22-A114-HBM)|re|1A (>250V, <500V)<br>re||
|Power dissipation, related to min. footprint<br>_T_A=25°C|_P_tot|1|W|
|Operating and storage temperature|_T_j ,_T_stg<br>a|-55... +150|°C|
|IEC climatic category; DIN IEC 68-1|jstg<br>a|55/150/56||



2016-05-30 

Page 1 

**BSS87** 

_**Rev. 2.0**_ 

**Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~ee~~||||
|**Characteristics**||||
|||||
|Thermal resistance, junction - case|_R_thJC<br>-<br>-<br>10||K/W|
|(Pin 2)||||
|||||
|SMD version, device on PCB:|_R_thJA|||
|@ min. footprint|-<br>-<br>125|||
|@ 6 cm2cooling area1)|-<br>-<br>70|||
|||||
|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~ee~~||||
|**Static Characteristics**||||
|Drain-source breakdown voltage<br>_V_GS=0,_I_D=250µA<br>Gate threshold voltage,_V_GS=_V_DS<br>_I_D=108µA<br>Zero gate voltage drain current<br>_V_DS=240V,_V_GS=0,_T_j=25°C<br>_V_DS=240V,_V_GS=0,_T_j=150°C<br>Gate-source leakage current<br>_V_GS=20V,_V_DS=0<br>Drain-source on-state resistance<br>_V_GS=4.5V,_I_D=0.24A<br>Drain-source on-state resistance<br>_V_GS=10V,_I_D=0.26A|_V_(BR)DSS<br>240<br>-<br>-<br>_V_GS(th)<br>0.8<br>1.2<br>1.8<br>_I_DSS<br>-<br>-<br>-<br>-<br>0.1<br>100<br>_I_GSS<br>-<br>-<br>10<br>_R_DS(on)<br>-<br>4.6<br>7.5<br>_R_DS(on)<br>-<br>3.9<br>6<br>|<br>|tf<br>|<br>|tt<br>tty<br>|<br>|tf<br>|<br>|<br>|<br>|<br>|tt||V<br>µA<br>nA<br>Fe|



1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 

2016-05-30 

Page 2 

**BSS87** 

_**Rev. 2.0**_ 

|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~eo~~||||||||||||||||
|**Dynamic Characteristics**||||||||||||||||
|Transconductance<br>Input capacitance<br>Output capacitance<br>Reverse transfer capacitance||_g_fs<br>_V_DS 2*_I_D*_R_DS(on)max,<br>_I_D=0.21A<br>0.16<br>0.33<br>-<br>_C_iss<br>_V_GS=0,_V_DS=25V,<br>_f_=1MHz<br>-<br>77.5<br>97<br>_C_oss<br>-<br>11.2<br>14<br>_C_rss<br>-<br>5.8<br>7.3<br>ft tt<br>==||||||||||||S<br>pF||
|Turn-on delay time<br>Rise time||_t_d(on)<br>_V_DD=120V,_V_GS=10V,<br>_I_D=0.28A,_R_G=6<br>-<br>3.7<br>5.5<br>_t_r<br>-<br>3.5<br>5.2<br>a||||||||||||ns||
|Turn-off delay time<br>Fall time||_t_d(off)<br>-<br>17.6<br>26.4<br>_t_f<br>-<br>27.3<br>41<br>=||||||||||||||
|**Gate Charge Characteristics**||||||||||||||||
|Gate to source charge|||_Q_gs|||_V_DD=192V,_I_D=0.26A||-||0.14||0.21|||nC|
|Gate to drain charge|||_Q_gd|||||-||1.7||2.5||||
|Gate charge total|||_Q_g|||_V_DD=192V,_I_D=0.26A,||-||3.7||5.5||||
|||||||_V_GS=0 to 10V||||||||||
|||||||||||||||||
|Gate plateau voltage|||_V_(plateau)|||_V_DD=192V,_I_D= 0.26 A||-||2.7||-|||V|
|**Reverse Diode**||||||||||||||||
|||||||||||||||||
|Inverse diode continuous|||_I_S||_T_A=25°C|||-||-||0.26||A||
|forward current||||||||||||||||
|||||||||||||||||
|Inv. diode direct current, pulsed|||_I_SM|||||-||-||1.04||||
|Inverse diode forward voltage|||_V_SD||_V_GS=0,_I_F=_I_S|||-||0.82||1.2||V||
|Reverse recovery time|||_t_rr||_V_R=120V,_I_F=_l_S,|||-||53.6||80.4||ns||
|Reverse recovery charge|||_Q_rr||d_i_F/d_t_=100A/µs|||-||101||152||nC||



2016-05-30 

Page 3 

**BSS87** 

## _**Rev. 2.0**_ 

## **1 Power dissipation** 

## _P_ tot = _f_ ( _T_ A) 

## **2 Drain current** 

## _I_ D = _f_ ( _T_ A) 

parameter: _V_ GS > 10 V 

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1.1 0.28<br>A<br>W<br>TEL ELE EEE EL PTET TTTT<br>0.24<br>0.9<br>INET 0.22 SEE SSECEEE EEE<br>0.8 LEEN PEELE EEE 0.2 POON<br>0.7 TTELN TELE 0.18 PCOCCPOE NE<br>SEE 0.16<br>0.6<br>0.14<br>0.5<br>EE EE rea tants StaE<br>0.12<br>LUETETNUEEET<br>1 0.4 OORRREEANGEEREEE 0.1 CPPCC<br>0.3 ATTELELTEEN EELT E 0.08 GeePLETE<br>0.06<br>0.2 TENT PTT TPN<br>0.04<br>STEELE CEELEEEEELCLENE<br>0.1<br>[|] 0.02 F LA<br>0 TL [EELELEELEL] TAN [ TEN] 0 PC C C C EECCe<br>0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160<br>TA TA<br>tot<br>P I D<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

_I_ D = _f_ ( _V_ DS ) 

parameter : _D_ = 0 , _T_ A = 25 °C 

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10 1<br>A<br>t p = 65.0µs<br>10 0<br> 100 µs<br> 1 ms<br>10 -1<br> 10 ms<br>===... ee ee<br>10 -2<br>DC<br>10 -3 PL LTEAIE ETE TET<br>10 [0] 10 [1] 10 [2] V 10 [3]<br>V DS<br>/  I D<br>DS<br>=  V<br>I D R DS(on)<br>**----- End of picture text -----**<br>


## **4 Transient thermal impedance** 

_Z_ thJA = _f_ ( _t_ p) 

parameter : _D_ = _t_ p/ _T_ 

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**----- Start of picture text -----**<br>
10 3<br>K/W<br>10 2<br>10 1<br>D = 0.50<br>amet 202 A SU Ht<br>10 0 0.20<br>0.10<br>single pulse<br>0.05<br>10 -1 0.02<br>0.01<br>10 -2 FU CCIM AE CCNFCO<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2] s 10 [4]<br>t<br>p<br>thJA<br>Z<br>**----- End of picture text -----**<br>


2016-05-30 

Page 4 

**BSS87** 

## _**Rev. 2.0**_ 

## **5 Typ. output characteristic** 

_I_ D = _f_ ( _V_ DS) 

parameter: _T_ j = 25 °C, _V_ GS 

## **6 Typ. drain-source on resistance** 

_R_ DS(on) = _f_ ( _I_ D) 

parameter: _T_ j = 25 °C, _V_ GS 

**==> picture [483 x 262] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.52 10<br>A 2.3V 2.9V 3.5V<br>10V ; Wf oo Sa 4.1V<br>7V 4.5V<br>0.44 6V TP EE EH 5V<br>5V 8 6V<br>0.4 4.5V i7//00RE pe bas 7V<br>0.36 4.1V 7 10V<br>3.5V ines //Aeeeeeee PEA<br>0.32 2.9V Sf 6 Foose<br>2.3V<br>0.28<br>Yi sane<br>5 tc ennmn es<br>0.24<br>1A 4<br>0.2<br>0.16 3<br>cere) | GREP<br>0.12<br>2<br>0.08<br>1<br>0.04<br>Je FEE EEE<br>0 0<br>0 0.5 1 1.5 2 2.5 3 V 4 0 0.08 0.16 0.24 0.32 0.4 A 0.52<br>V DS I D<br>DS(on)<br>I D R<br>**----- End of picture text -----**<br>


## **7 Typ. transfer characteristics** 

_I_ D= _f_ ( _V_ GS ); _V_ DS 2 x _I_ D x _R_ DS(on)max parameter: _T_ j = 25 °C 

## **8 Typ. forward transconductance** 

_g_ fs = f( _I_ D) 

parameter: _T_ j = 25 °C 

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**----- Start of picture text -----**<br>
A1 0.6 |<br>S<br>0.8<br>0.7<br>| a<br>0.4<br>COC 4<br>0.6<br>0.5 cr 0.3 o<br>0.4<br>to ot 0.2 LAE<br>0.3<br>0.2<br>POPPE ART EE<br>0.1<br>COCA<br>0.1<br>cree LL EE<br>0 0<br>0 0.8 1.6 2.4 3.2 V 4.4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A 1<br>V GS I D<br>fs<br>I D g<br>**----- End of picture text -----**<br>


2016-05-30 

Page 5 

**BSS87** 

## _**Rev. 2.0**_ 

## **9 Drain-source on-state resistance** 

## **10 Typ. gate threshold voltage** 

_R_ DS(on) = _f_ ( _T_ j) 

## _V_ GS(th) = _f_ ( _T_ j) 

parameter : _I_ D = 0.26 A, _V_ GS = 10 V 

parameter: _V_ GS = _V_ DS; _I_ D =108µA 

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**----- Start of picture text -----**<br>
2<br>V TRL | | | |<br>~,<br>98%<br>ft] ) Tp ; aaa<br>1.6 Saaeeeeene<br>1.4<br><a<br>PN] typ. py |<br>1.2<br>=<br>1<br>Oy ET KL ETI<br>- So<br>2%<br>0.8<br>| ><br>0.6<br>.<br>OE<br>0.4<br>-60 -20 20 60 100 °C 160<br>T<br>—_P r j<br>12 Forward character. of reverse diode<br>F =  =  f  (VSD)SD))<br>parameter: T<br>j<br>10 1<br>A [ft | ft Py yt<br>rt tt; | TT ttt EE<br>FLEE ELEL ELLE ELEL ELLE ELLE Ef<br>10 0<br>BRRRRRRRRRRREEE<br>=. >><br>Lt | TAFT | Tet<br>ptt te | PA tT tt tt<br>10 -1 tEThfEThfhff<br>T j = 25 °C typ = 25 °C typ<br>LSe|Se|| [PATE T j = 150 °C typ = 150 °C typ [===[|===[|[| |<br>eli T j = 25 °C (98%) = 25 °C (98%) [| ty]<br>T j = 150 °C (98%) = 150 °C (98%)<br>10 -2 ts TH<br>0 0.4 0.8 1.2 1.6 2 2.4 V 3<br>— V SD<br>GS(th)<br>V<br>I F<br>**----- End of picture text -----**<br>


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os 30 ee<br>PELE<br>24<br>-ELELLEEELL LL<br>PELE ELL<br>22<br>20<br>SS000e0ee000<br>18<br>PELE<br>16<br>SEPP EEE<br>14 ~ELEELEEELLE EL<br>12<br>Pee<br>10<br>PELE LL<br>8 98%<br>Ser ee<br>6<br>4 typ<br>ppt eer eT<br>2<br>Pe?LELLELELLEL<br>0<br>-60 -20 20 60 100 °C 180<br>T<br>—_ j<br>DS(on)<br>R V<br>**----- End of picture text -----**<br>


## **12 Forward character. of reverse diode** 

## **11 Typ. capacitances** 

_C_ = _f_ ( _V_ DS) 

## _I_ F =  = _f_ (VSD)SD)) 

parameter: _V_ GS=0, _f_ =1 MHz, _T_ j = 25 °C 

parameter: _T_ j 

**==> picture [474 x 265] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 3 10 1<br>===52=======—NN====2==2=======<br>pF a eG GO A [ft | ft Py yt<br>ee ee rt tt; | TT ttt EE<br>NESS FLEE ELEL ELLE ELEL ELLE ELLE Ef<br>C iss<br>10 2 10 0<br>MEET EEE BRRRRRRRRRRREEE<br>== =. >><br>fr Mm fT fT Lt | TAFT | Tet<br>ee ptt te | PA tT tt tt<br>C oss<br>f 10 1 ASSECETPCASES 10 -1 tEThfEThfhff<br>C rss T j = 25 °C typ = 25 °C typ<br>aae LSe|Se|| [PATE T j = 150 °C typ = 150 °C typ [===[|===[|[| |<br>a eli T j = 25 °C (98%) = 25 °C (98%) [| ty]<br>T j = 150 °C (98%) = 150 °C (98%)<br>10 0 Coe 10 -2 ts TH<br>0 6 12 18 24 V 36 0 0.4 0.8 1.2 1.6 2 2.4 V<br>— V DS — V SD<br>C I F<br>**----- End of picture text -----**<br>


2016-05-30 

Page 6 

**BSS87** 

## _**Rev. 2.0**_ 

**==> picture [484 x 323] intentionally omitted <==**

**----- Start of picture text -----**<br>
13 Typ. gate charge 14 Drain-source breakdown voltage<br>V GS =  f   ( Q G);   parameter:  V DS , V (BR)DSS =  f  ( T j)<br>I D = 0.26 A pulsed,  T j = 25 °C<br>16 = 291V<br>V =io rrcoe<br>276<br>EEE<br>12<br>271<br>ECE FH<br>266<br>10<br>261<br>Efof<br>8 0.2  V DS max ff 256<br>ie<br>251<br>0.5  V DS max<br>246<br>6 0.8  V DS max , [Hn]<br>241<br>236<br>4<br>231<br>2 tL [fe] 226<br>221<br>rf pfeHioae; [a] [a] aceueaiH [y] a cH nt tiecoe<br>0 216<br>0 1 2 3 4 nC 6 -60 -20 20 60 100 °C 180<br>aie Q G T j<br>GS (BR)DSS<br>V V<br>**----- End of picture text -----**<br>


2016-05-30 

Page 7 

**BSS87** 

_**Rev. 2.0**_ 

## **Package Outline SOT-89** 

## **Footprint** 

Soldering type: Reflow soldering 

## **Tape and Reel** 

Dimensions in mm 

2016-05-30 

Page 8 

**BSS87** 

## BSS87 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2016-06-09|Release of final version|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

9 



## Links

- [View this product on Novapart](https://novapart.co/products/BSS87H6327FTSA1/power-mosfet-n-channel-240-v-260-ma-6-ohm-sot-89)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/bss87h6327ftsa1/mosfet-n-ch-240v-0-26a-sot-89/dp/2480657)
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