# MOSFET, P CHANNEL, -50V, 1.2OHM, -130mA, SOT-23-3
**URL**: https://novapart.co/products/BSS84-7-F/mosfet-p-channel-50v-12ohm-130ma-sot-23-3
**SKU**: BSS84-7-F
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0300
**Stock**: 10+
**Lead Time**: 120 days (indicative)
## Description
Channel Type:P Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:130mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Po
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 360mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 50V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 130mA |
| Drain Source On State Resistance | 10ohm |
| Gate Source Threshold Voltage Max | 1.7V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2306397/)
## **P-Channel Enhancement Mode Vertical D-MOS Transistor**
## **Features:**
- Voltage Controlled P-Channel Small signal switch
- High Density Cell Design for Low RDS(ON)
- High Saturation Current
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SOT-23
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## **Applications:**
- Line Current Interrupter in Telephone Sets
- Relay, High Speed and Line Transformer Drivers
## **Maximum Ratings:**
## **Ratings at 25°C unless otherwise specified.**
|**Parameter**|**Symbol**|**Value**|**Units**|
|---|---|---|---|
|Drain-source voltage|VDS|-50|V|
|Gate-source voltage|VGSO|±20|V|
|Drain current continuous (Note 1)
Pulse|ID|-130
-520|mA|
|Power dissipation (Note 1)|PD|0.36|W|
|Derate above 25°C||2.9|mW/°C|
|Thermal resistance, Junction-to-ambient|RθJA|350|°C/W|
|Operating junction and storage temperature|TJ, Tstg|-55 to +150|°C|
|Maximum Lead Temperature For Soldering
Purposes, 1/16” from case for 10 seconds|TL|300|°C|
## **Notes:**
(1) RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
11/09/19 V1.1
Page <1>
## **P-Channel Enhancement Mode Vertical D-MOS Transistor**
## **Electrical Characteristics:**
## **Ratings at 25°C unless otherwise specified**
|**Parameter**|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Drain-source breakdown voltage|V(BR)DSS|VGS=0V, ID=-250μA|-50|-|-|V|
|Breakdown voltage temperature coef-
fcient|ΔV(BR)DSS/ ΔTJ|ID= –250 μA,Referenced to
25°C|-|-48|-|mV/°C|
|Gate threshold voltage|VGS(th)|VDS=VGS, ID=-1mA|-0.8|-1.7|-2|V|
|Gate threshold voltage temperature
coeffcient|ΔVGS(th)/ ΔTJ|ID= –1mA, Referenced to 25°C|-|3|-|mV/°C|
|Gate-body leakage|IGSS|VDS=0V, VGS=±20V|-|-|±100|nA|
|Zero gate voltage drain current|IDSS|VDS=-50V, VGS=0V|-|-|-15|μA|
|||VDS=-50V, VGS=0V TJ= 125°C|-|-|-60|μA|
|Drain-source on-resistance|RDS(ON)|VGS= -5V, ID= -0.1A|-|1.2|10|Ω|
|||VGS= -5V, ID= -0.1A, TJ=125°C|-|1.9|17||
|On-state drain current|ID(on)|VGS=-5V, VDS=-10V|-0.6|-|-|A|
|Forwards transfer admittance||yfs||VDS=-25V, ID=-0.1A|0.05|0.6|-|S|
|Input capacitance|CISS|VDS=-25V, VGS=0V, f=1MHz|-|73|-|pF|
|Output capacitance|COSS||-|10|-||
|Reverse transfer capacitance|CRSS||-|5|-||
|Gate resistance|RG|VGS=-15mV, f=1MHz|-|9|-|Ω|
|Turn-on delaytime|tD(ON)|VDD=-30V, ID=-0.27A, VGS=-10V,
RGEN=6Ω|-|2.5|5|ns|
|Turn-on rise time|tr||-|6.3|13||
|Turn-off delaytime|tD(OFF)||-|10|20||
|Turn-off fall time|tf||-|4.8|9.6||
|Total gate charge|Qg|VDS=-25V, ID=-0.1A, VGS=-5 V|-|0.9|1.3|nC|
|Gate-source charge|Qgs||-|0.2|-||
|Gate-drain charge|Qgd||-|0.3|-||
|Maximum continuous drain-source
diode forward current|IS|-|-|-|-0.13|A|
|Drain-source diode forward voltage|VSD|VGS=0V, IS=-0.26A
(Note 2)|-|-0.8|-1.4|V|
|Diode reverse recovery time|trr|IF=-0.1A
diF/dt=100A/μs(Note 2)|-|10|-|nS|
|Diode reverse recovery charge|Qrr|-|-|3|-|nC|
## **Notes:**
(2) Pulse Test: Pulse Width δ300us, Duty Cycle ≤2%.
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
11/09/19 V1.1
Page <2>
## **P-Channel Enhancement Mode Vertical D-MOS Transistor**
## **Typical Characteristics:**
**Ta = 25°C unless otherwise specified**
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
11/09/19 V1.1
Page <3>
## **P-Channel Enhancement Mode Vertical D-MOS Transistor**
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
11/09/19 V1.1
Page <4>
## **P-Channel Enhancement Mode Vertical D-MOS Transistor**
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
11/09/19 V1.1
Page <5>
## **P-Channel Enhancement Mode Vertical D-MOS Transistor**
## **Package Outline:**
## **Plastic surface mounted package**
**==> picture [170 x 135] intentionally omitted <==**
## **Soldering Footprint:**
||||
|---|---|---|
|**SOT-23**|||
|**Dim.**|**Min.**|**Max.**|
|A|2.7|3.1|
|B|1.1|1.5|
|C|1 Typ.||
|D|0.4 Typ.||
|E|0.35|0.48|
|G|1.8|2|
|H|0.02|0.1|
|J|0.1 Typ.||
|K|2.2|2.6|
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Dimensions : Millimetres
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## **Package Information:**
|**Device**|**Package**|**Shipping**|
|---|---|---|
|BSS84-7-F|SOT-23|3,000 / Tape & Reel|
Dimensions : Millimetres
## **Part Number Table**
|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|P-Channel Enhancement Mode
Vertical D-MOS Transistor|BSS84-7-F|
**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019.
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
11/09/19 V1.1
Page <6>
## Links
- [View this product on Novapart](https://novapart.co/products/BSS84-7-F/mosfet-p-channel-50v-12ohm-130ma-sot-23-3)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/multicomp-pro/bss84-7-f/mosfet-p-channel-50v-1-2ohm-130ma/dp/2306397)
---
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