# Power MOSFET, N Channel, 100 V, 190 mA, 2.9 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3755136/)

**URL**: https://novapart.co/products/BSS169IXTSA1/power-mosfet-n-channel-100-v-190-ma-29-ohm-sot-23
**SKU**: BSS169IXTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1820
**Stock**: 25+
**Lead Time**: 78 days (indicative)

## Description

Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 360mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 190mA |
| Drain Source On State Resistance | 2.9ohm |
| Gate Source Threshold Voltage Max | 2.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3755136/)

BSS169I 

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## Small ~~-S~~ ignal Transistor 

## Features 

- ¢ N ~~-~~ channel 

- Depletion mode 

- dv/dt rated 

- ¢ Pb ~~-f~~ ree lead-plating; ROHS compliant ¢ Halogen ~~-f~~ ree according to AEC61249- ~~2-2~~ 1 

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PG - SOT23 -3<br>3<br>]<br>1<br>I~<br>_<br>**----- End of picture text -----**<br>


## Product validation 

Fully qualified according to JEDEC for Industrial Applications 

## ~~Table 1 _ Key Performance Parameters~~ 

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m in s<br>**----- End of picture text -----**<br>


ESD Sensitivity, 

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@ ROHS<br>**----- End of picture text -----**<br>


Final Data Sheet 

1 

Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17 

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Small ~~-S~~ ignal ~~BSS169I Transistor~~ 

Tnfit ~~C~~ in neon ; 

1 Maximum ratings at Ta=25 °C, unless otherwise specified 

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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|Table|2_—/|Maximum|ratings|
|m|aramet|er|Symbol,ymbo|Min.||aeTyp.|[Max._|it|Noote /||TeTe t|s|t|ConditionCondit|
|.|.|0.19|Ta=25|°C|
|j,max—19|2h (Gsn20|WV,|dildit=200|Alus,|
|Reverse|diode|dvidt|dvidt|-|be|||Vis||2-0.|

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## 2 Thermal characteristics 

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|||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Table|3_—|Thermal|characteristics|
|p|aramet|er|symbol,ymbo|Min,aeTyp.|[Max.nit||N|o|te|I/|TeTe t|s|t|ConditionCondit|
|Thermal|resistance,|junction|-|ambient,|
|3|Electrical|characteristics|
|at|Tj=25|°C,|unless|otherwise|specified|
|Table|4|Static|characteristics|
|p|aramet|er|Symbol,ymbo|Min,aeTyp.|[Max.||it|Noote||/|TeTe t|s|t|ConditionCondit|
|Drain-source|breakdown|voltage|[Veross|[100||-||-||v|Ves=-10|V,|Ip=250|YA|
|Gate|threshold|voltage|Vos=3|V,|Ipb=50|YA|
|Drain|-|source|cutoff current|a|a|e|9|v= 4100 vy Ven|t|o yr ra495So|
|Gate-source|leakage|current|less|see|10|[nc|Ves=20|V,|Vos=0|V|
|On-state|drain|current|loss|«goss|mak|Ves=0|V,|Vos=10|V|
|Drain-source|on-state|resistance|osm|||oe|VestOW|e019.|[A]|
|Transconductance|lo|=e|soo|-|s||Vos|>2|/o|Ros(onymax,|[p=0.15|A|

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Final Data Sheet 

3 

Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17 

Small ~~-S~~ ignal Transistor BSS169I 

CiT **n** fitneon ; 

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||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Table|5|Dynamic|characteristics|
|Parameter|Symbol|Min.|||T|wa|Note|/|Test|Condition|
|Input|capacitance|css|fe|te|p|Ves=-10|V,|Vos=25|V,|H1|MHz|
|Output|capacitance|Coss|sep|Ves=-10|V,|Vos=25|V,|H1|MHz|
|Reverse|transfer|capacitance|Ce|ee|eae|Ves=-10|V,|Vos=25|V,|1|MHz|
|.|Vpp=50|V,|Ves=|-|3|to|7|V,|Ip=0|.|12|A,|
|ae|Voo=50|V,|Ves=|-|3|to|7|V,|In=0|.|12|A,|
|.|Vop=50|V,|Ves=-3|to|7|V,|[Ip=]|[0]|[.12]|A,|
|.|Vop=50|V,|Ves=|-|3|to|7|V,|Ip=0|.|12|A,|
|Table|6|Gate|charge|characteristics|
|Parameter|Symbol|Min.|T|a|en|Note|/|Test|Condition|
|Gate|to|source|charge|las|se|sftot2||e|[nc|Vpp=80|V,|Ip=0.12|A,|Vcs=-3|to|7|V|
|Gate|to|drain|charge|las|ss eso|fe|[nc|Voo=80|V,|Ip=0.12|A,|Ves=-3|to|7|V|
|Gate|charge|total|la|eft|En|Vop=80|V,|Ip=0.12|A,|Ves=-3|to|7|V|
|Gate|plateau|voltage|Veatew|f-|—s*|(0.43|[-|fv|Vpp=80|V,|Ip=0.12|A,|Vcs=-3|to|7|V|
|Table|7|Reverse|diode|
|Parameter|Symbol|Min.|||T|a|OO|Note|/|Test|Condition|
|Diode|continous|forward|current|Ws|ee|fort|fa|Ta=25|°C|
|Diode|forward|voltage|Veo|ssf-—*014|.|2|82|V__|||Ves=-10V,|r=0.19|A,|T=25|°C|
|Reverse|recovery|time|it;||e|[20.5||25.6|[ns|||Va=50V,|r=0.12|A,|dic/dt=100|Aus|
|Reverse|recovery|charge|la,|fe|fg|[2.4|[nc|Vr=50|V,|Ir=0.12|A,|dir/dt=100|A/us|

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Final Data Sheet 

4 

Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17 

Small ~~-S~~ ignal Transistor BSS169I 

~~a~~ 

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## 4 Electrical characteristics diagrams 

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Final Data Sheet 

5 

Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17 

on Cinfineon ; 

Small ~~-S~~ ignal Transistor BSS1691 

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0.5 14<br>Le 40g “H el fer BEE<br>nalffev} EtELT] | ee ee<br>YT<br>TTT TTT) RRA+ +- +<br>2 Ss<br>2 [fe t | YS)<br>|f e | ga<br>ayf aa<br>4 | e e n y<br>|e e<br>| e e<br>of EEEE E EE | See<br>0 2 4 6 8 10 0 . 0 0 . 1 0 . 2 0 . 3 0 . 4 0 . 5<br>Vos [V] bb [A]<br>0 . 5 0 . 35<br>a ee 0.30 CCC ae—<br>f o EEE Te<br>03ef wlltlLLLtitttALLLeet tt<br>ee ee) ee<br>ee A A he<br>ToL ee HA<br>so ALEC<br>a LZ 7EEE<br>TFL] | o s HEE EE<br>| TCEEEEEEEEEEL<br>4ee ee LL<br>- 2 - 1 0 1 2 0.00 0.05 0.10 015 0.20 0.25 0.30 0 3 5 0 . 40<br>Ves [V] Ip [A]<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17 

~~a~~ 

## Small ~~-S~~ ignal ~~BSS1691 Transistor~~ 

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[Diagram 9: Normalized drain-source on resistance [Diagram 10: Typ.gate threshold voltage<br>2.0 PTT TTT TTT TTT TTT TT TTT TT - 1.0<br>PITT TT TTT TTT TTT TT<br>FCHEEEE-EEEEE<br>1.6 VA - 1.5<br>PLETE TT TTT LTE TETFEE HE MTT<br>os LLL yeeA<br>go EERE eee<br>2 12 4 - 2.0 >=<br>ee Oe aeeae<br>S Litt ti Teer fe<br>@ [TTTTerre<br>ee5s ostLITTTTertyTTT | éss linTNLSee<br>| cree Peete<br>& 0.4 PTT ETT TTT EEE EEE - 3.0<br>PTET TT LTT EEE EEE<br>PTT ETT TTTEEE<br>0 . 0 FEEEEEEEEEEEEEEE HEHE - 3 . 5<br>- 80 - 40 0 40 80 120 160 - 80 - 40 0 40 80 120 160<br>[Rosionj=f(T1), lo=0.05A, Ves=OV TEC] (| Vssinf(Ti), Vos=3 Vs o=50WA nC)<br>[Diagram 11:Typ.capacitances «Diagram 12: Forward characteristics ofreverse diode |<br>10  eee 0  SS SSS<br>RS SS SS SS | PP ———=$ 95 °C a<br>PpRS QS | ° aa.ee ee<br>L [| [| [ | J[ JT[ [ JTT fT Jtf fT T ft T tT fTfT TT f [\ } --— - — 21 5 °C,max0°C |[|_|| [A14) 7A ||| UT<br>a en 150°C, max } |ZT<br>tiing  titi titty ttt |} p FAya<br>1? KEE tt PPT | df. =====22=72ee ee =<br>——— i<br>SS OSE ee<br>e ESSNESSSRSSSSS fee CLE<br>— 2 eee < 1 07<br>eo oy [TT7]LLIN [IMETPT] ) ARRLLEEeePTTTE Tt)| j* eeSEESeeSeeee<br>===>RS nS—— === SS Ted/<br>LSa [RS] [RS][ A] 3 | de<br>SEE ee ie 5 eSSe<br>P| |  EE| ft  EEEft ft ttESSty dh SSSa a SS<br>© o w  ELLE<br>0 10 20 30 0.0 0.5 1.0 1 . 5<br>Vos [V] Vsp [V]<br>|C=f(Vos), Ves=-3 Vi RIMHz sd e=f(Von); parameter:<br>**----- End of picture text -----**<br>


Final Data Sheet 

7 

Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17 

BSS169I 

~~Te~~ 

## Small ~~-S~~ ignal Transistor 

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Diagram 13: Typ. gate charge Diagram 14: Drain - source breakdown voltage<br>8 a 120<br>}—20vy TT<br>W—--50v;---sovi || | | | | fF,viv ||| J |<br>a es a 4 2 A 115 7<br>a e e ee 2 ee p<br>a ee ee ee) ee ee ee ee<br>a ee ey A ee 2 ee ee 110 SA,<br>ga ___| | | | [fi7/ | | y<br>a ee ee ee 2 2<br>a ee ee Ae ee ee ee ee 105 /<br>=. pf ft TA S 4<br>>g gi a| ee[| |27 Aov i | ee =a 4<br>a ee ee ee A 2 ee ee ee ee 2 400 VA<br>aee2 2 ee ee ee ee ee g Wi<br>go +_|---| Afy |2| | | | | )<br>a A ee ee ee ee ee VA<br>Lf  T ot 95 7<br>ee ee ee ee ee ee /<br>a ee e eee ee ee<br>oi f | | | [| | [| | | | 4<br>| a es 90 VA<br>|aa a esee es<br>a aeeeeeeeseeeeee eeee<br>4 l[ [| [ fT oT ofpty 85<br>0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 - 80 - 40 0 40 80 120 160<br>Qgate [nC] Tj [°C]<br>Vos=f(Qgate), Ip=0 . 12 A pulsed, Tj=25 °C Veripss)=f(7}), Ip=250 yA<br>**----- End of picture text -----**<br>


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Diagram Gate charge waveforms<br>Vos<br>Q g<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17 

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Small ~~-S~~ ignal Transistor BSS169I 

~~Te~~ 

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_<br>n neon<br>**----- End of picture text -----**<br>


## Revision History 

## BSS1691 

## Revision: 2021 ~~-0~~ 3 ~~-1~~ 7, Rev ~~.~~ 2.1 

|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Revision|||||||Subjects (major changes since last revision)|||||||||||
|2.0||||2021~~-~~01~~-~~26||||Release of final version|||||||||||
|2.1||||2021~~-0~~3~~-~~17||||Updatetechnologynaming|||||||||||



Trademarks All referenced product or service names and trademarks are the property of their respective owners. 

## We Listen to Your Comments 

Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document ~~.~~ Please send your proposal (including a reference to this document) to: erratum@infineo ~~n.~~ com 

Published by Infineon Technologies AG 81726 Miinchen, Germany © 2020 Infineon Technologies AG All Rights Reserved ~~.~~ 

## Legal Disclaimer 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie’) ~~.~~ 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non ~~-i~~ nfringement of intellectual property rights of any third party ~~.~~ 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications ~~.~~ 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application ~~.~~ 

## Information 

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www. ~~i~~ nfineon ~~.~~ com). 

## Warnings 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office ~~.~~ 

The Infineon Technologies component described in this Data Sheet may be used in lif ~~e~~ -support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lif ~~e~~ -support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system ~~.~~ Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ~~.~~ If they fail, it is reasonable to assume that the health of the user or other persons may be endangered ~~.~~ 

Final Data Sheet 

10 

Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17 



## Links

- [View this product on Novapart](https://novapart.co/products/BSS169IXTSA1/power-mosfet-n-channel-100-v-190-ma-29-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/bss169ixtsa1/mosfet-n-ch-100v-0-19a-sot-23/dp/3755136)
---

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