# Power MOSFET, N Channel, 60 V, 360 mA, 1 ohm, SOT-23, Surface Mount
**URL**: https://novapart.co/products/BSS138BK/power-mosfet-n-channel-60-v-360-ma-1-ohm-sot-23
**SKU**: BSS138BK
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0420
**Stock**: 10+
**Lead Time**: 78 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | Multicomp Pro MOSFETs N-Channel |
| Qualification | AEC-Q101 |
| Power Dissipation | 350mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 360mA |
| Drain Source On State Resistance | 1ohm |
| Gate Source Threshold Voltage Max | 1.6V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:4140856/)
## **N Channel MOSFET**
## **Features**
- High density cell design for extremely low RDS(on)
- Rugged and Reliable
## **Application**
- Direct Logic-Level Interface: TTL/CMOS
- Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories,Transistors, etc.
- Battery Operated Systems
- Solid-State Relays
**Absolute Maximum Ratings** (Ta = 25°C Unless otherwise specified)
|**Absolute Maximum Ratings**(Ta = 25°C Unless otherwise specified)|**Absolute Maximum Ratings**(Ta = 25°C Unless otherwise specified)|(Ta = 25°C Unless otherwise specified)|(Ta = 25°C Unless otherwise specified)||
|---|---|---|---|---|
|**Parameter**
~~a~~||**Symbol**
~~a~~|**Value**
~~a~~|**Unit**
~~a~~|
|Drain-Source Voltage
~~pf~~||Vdss
~~pf~~|60
~~pf~~|V
~~pf~~|
|Gate-Source Voltage
~~pf~~
~~ee~~||Vgss
~~pf~~
~~ee~~|±20
~~pf~~
~~ee~~||
|Continuous Drain Current
~~ee~~|Vgs =10V|Id
~~|~~
~~eee~~|0.36
~~|~~|A
~~ee~~|
|Continuous Drain Current Tamb = 100°C*
~~ee~~|Vgs =10V||0.23
~~|~~
~~ee~~||
|Peak Drain Current Tamb = 25°C;
singlepulse; tp≤ 10μs
~~ee~~
~~ee~~||Idm
~~|~~
~~ee~~
~~eee~~|1.2
~~|~~
~~ee~~
~~ee~~||
|Total Power Dissipation**
~~pe~~||Ptot
~~eee ~~
~~|~~
~~|~~
~~oo~~|350
~~ee~~
~~|~~|mW
~~ee~~
~~Oe~~|
|Total Power Dissipation*
~~pe~~
~~————~~~~**e**~~|||420
~~|~~
~~|~~
||
|Total Power Dissipation Tsp = 25°C
~~pe~~
~~————~~~~**e**~~|||1140
~~|~~
~~|~~
~~oo~~||
|Junction temperature
~~pe~~
~~————~~~~**e**~~||Tj
~~|~~
~~|~~
~~oo~~|-55 to +150
~~|~~
~~|~~
~~oo~~|°C
~~Oe~~|
|Ambient temperature
~~————~~~~**e**~~
~~a~~||Tamb
~~|~~
~~oo~~
~~a~~
~~es~~|-55 to +150
~~|~~
~~oo~~
~~a~~||
|Storage temperature
~~————~~~~**e**~~
~~e~~||Tstg
~~|~~
~~oo~~
~~es~~|-65 to +150
~~|~~
~~oo~~||
|Source current
~~————~~~~**e** ~~
~~a~~||Is
~~|~~
~~oo ~~
~~es~~
~~a~~|0.36
~~|~~
~~oo ~~
~~a~~|A
~~Oe~~
~~a~~|
|Electrostatic discharge voltage HBM
~~ee~~||Vesd
~~ee~~|1500
~~ee~~|V
~~ee~~|
## **Thermal Resistance**
|**Parameter**|**Parameter**|**Symbol**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|Thermal resistance fromjunction to ambient*|in free air|Rth(j-a)|310|370|K/W|
|Thermal resistance fromjunction to ambient**|||-|300||
|Thermal resistance fromjunction to solderpoint||Rth(j-sp)|-|115||
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Page <1> 03/01/23 V1.0
## **N Channel MOSFET**
## **Electrical Characteristics at** (Ta = 25 °C Unless otherwise specified)
|**Parameter**|**Symbol**|**Test Conditions**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
||||**Min.**|**Typ.**|**Max.**||
|**Static characteristics**|||||||
|Drain-Source Breakdown Voltage|V(BR)DSS|Id = 250μA; Vgs = 0V; Tj = 25°C|60|-|-||
|Gate-Source Threshold Voltage|VGSth|Id = 250μA; Vds = Vgs; Tj = 25°C|0.48|1.1|1.6|V|
|Drain Leakage Current|Idss|Vds = 60V; Vgs = 0V; Tj = 25°C|-|-|1|μA|
|||Vds = 60V; Vgs = 0V; Tj = 150°C|-|-|10||
|Gate Leakage Current|Igss|Vgs = 20V; Vds = 0V; Tj = 25°C|-|-|10|μA|
|||Vgs = -20V; Vds = 0V; Tj = 25°C|-|-|10||
|||Vgs = 10V; Vds = 0V; Tj = 25°C|-|-|1.0||
|||Vgs = -10V; Vds = 0V; Tj = 25°C|-|-|1.0||
|Drain-Source On-State Resistance|RDSon|Vgs = 10V; Id = 350mA; Tj = 25°C|-|1.1|1.6|Ω|
|||Vgs = 10V; Id = 350mA; Tj = 150°C|-|2|3.2||
|||Vgs = 4.5V; Id = 200mA; Tj = 25°C|-|1.2|2.2||
|||Vgs = 2.5V; Id = 10mA; Tj = 25°C|-|1.9|6.5||
|Forward Trans conductance|gfs|Vds = 10V; Id = 200mA; Tj = 25°C|-|700|-|mS|
|**Dynamic Characteristics**|||||||
|Total Gate Charge|QG(tot)|Vds = 30V; Id = 300mA;
Vgs = 4.5V; Tj = 25°C|-|0.6|0.7|nC|
|Gate-Source Charge|Qgs||-|0.1|-||
|Gate-Drain Charge|Qgd||-|0.2|-||
|Input Capacitance|Ciss|Vds = 10V; f = 1MHz; Vgs = 0V;
Tj = 25°C|-|42|56|pF|
|Output Capacitance|Coss||-|7|-||
|Reverse Transfer Capacitance|Crss||-|4|-||
|Turn-on DelayTime|td(on)|Vds = 40V; Rl = 250Ω; Vgs = 10V;
RG(ext)= 6Ω; Tj = 25°C|-|5|10|ns|
|Rise Time|tr||-|5|-||
|Turn-of DelayTime|td(of)||-|38|76||
|Fall time|tf||-|20|-||
|**Source-Drain Diode**|||||||
|Source-Drain Voltage|Vsd|Is = 300mA; Vgs =0V; Tj = 25°C|0.47|0.8|1.2|V|
## **Note:**
*Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
**Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1cm[2] .
## **Recommended Reflow Solder Profiles**
The recommended reflow solder profiles for Pb and Pb-free devices are shown below. Figure 1 shows the recommended solder profile for devices that have Pb-free terminal plating, and where a Pb free solder is used.
Figure 2 shows the recommended solder profile for devices with Pb-free terminal plating used with leaded solder, or for devices with leaded terminal plating used with a leaded solder.
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03/01/23 V1.0
Page <2>
## **N Channel MOSFET**
## **Reflow Profiles in Tabular Form**
|**Profile Feature**|**Sn-Pb System**|**Pb-Free System**|
|---|---|---|
|Average Ramp-UpRate|~3°C/second|~3°C/second|
|**Preheat**
Temperature Range
Time|150-170°C
60-180 seconds|150-200°C
60-180 seconds|
|**Time maintained above:**
Temperature
Time|200°C
30-50 seconds|217°C
60-150 seconds|
|Peak Temperature|235°C|260°C max.|
|Time within +0 -5°C of actual Peak|10 seconds|40 seconds|
|Ramp-Down Rate|3°C/second max.|6°C/second max.|
## **Recommended Wave Solder Profiles**
The Recommended solder Profile For Devices with Pb-free terminal plating where a Pb-free solder is used
The Recommended solder Profile For Devices with Pb-free terminal plating used with leaded solder, or for devices with leaded terminal plating used with leaded solder
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03/01/23 V1.0
Page <3>
## **N Channel MOSFET**
## **Wave Profiles in Tabular Form**
|**Profile Feature**|**Sn-Pb System**|**Pb-Free System**|
|---|---|---|
|Average Ramp-UpRate|~200°C/second|~200°C/second|
|Heatingrate during preheat|Typical 1-2, Max 4°C/sec|Typical 1-2, Max 4°C/Sec|
|Finalpreheat Temperature|Within 125°C of Solder Temp.|Within 125°C of Solder Temp.|
|Peak Temperature|235°C|260°C max.|
|Time within +0 -5°C of actual Peak|10 seconds|10 seconds|
|Ramp-Down Rate|5°C/second max.|5°C/second max.|
## **Typical Characteristics Curves**
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## **N Channel MOSFET**
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## **N Channel MOSFET**
## **Diagram**
## **SOT-23 SMD Package**
## **Suggested Pad Layout**
**==> picture [123 x 84] intentionally omitted <==**
**----- Start of picture text -----**
Pin configuration
)
1. Gate
2. Source
S 3. Drain
**----- End of picture text -----**
## **Part Number Table**
## Dimensions : Millimetres
|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|N Channel Plastic Encapsulate MOSFET, SOT 23|BSS138BK|
**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019.
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## Links
- [View this product on Novapart](https://novapart.co/products/BSS138BK/power-mosfet-n-channel-60-v-360-ma-1-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/multicomp-pro/bss138bk/mosfet-n-ch-60v-0-36a-sot-23/dp/4140856)
---
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