# Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1843676/)

**URL**: https://novapart.co/products/BSS123TA/power-mosfet-n-channel-100-v-170-ma-6-ohm-sot-23
**SKU**: BSS123TA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1100
**Stock**: 10+
**Lead Time**: 293 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:170mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 300mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 170mA |
| Drain Source On State Resistance | 6ohm |
| Gate Source Threshold Voltage Max | 2.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1843676/)

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 

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ISSUE 3 - JANUARY 1996 o 

PARTMARKING DETAIL ~SA 

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DB Ss<br>G<br>ABSOLUTE MAXIMUM RATINGS. $OT23<br>PARAMETER | SYMBOL L VALUE UNIT<br>Drain-Source Voltage T Vos 100 V<br>Drain-Gate Voltageremnant A Nt ' VogaA tr' 100er nn ann Une etreVv dene urn vemmre nah<br>a Se ar eee ected<br>Continuous Drain Current at Tap y228°C Llp i 170 mA<br>iactehhasiihtaGeahcinesnicdaanacieA SARIN. Lea SE<br>PulsedttheDrain Current en mene mt Ren rhea' tom rarer et nr|{eAlerts680Hirt dns rate ene snnenearemAtna €hentia<br>Gate-Source Voitage | Ves +20 | v<br>Peak Gate-Source Voltage Vesa £20 Vv<br>Power Dissipation at T,,,4y=25°C Prot 360 mW<br>Operating and Storage Ternperature Range i TT stg -§5 to +150 °C<br>ELECTRICAL CHARACTERISTICS (at Tamp = 25°C unless otherwise stated).<br>PARAMETER | SYMBOL [ MIN. | MIN. | MAX. UNIT) CONDITIONS.<br>Drain-Source | BVogs 100 | Vv Ip=0.25MA, Vgg=0V<br>BreakdownVoltage|<br>Gate-Source Threshold | Vggyn, | 0.8 12.2 128 | V | Ip=1MA. Vos= Vg<br>Voltage ne ee ae 7 nl Ahora TORTI ee<br>Gate-Body Leakage Ioss | M0 BO | A | Vig 20, [VgeOV]<br>Zero Gate Voltage | lose i 1 118 pA T Vog= 100V, Vagg=0V<br>Drain Current i 12 | 60 HA | Vng=100V, Vag=O0V, T=125°C(2)<br>Static Drain-Source :i Rosten) ff15 Té20 Q[RA ia| Vpge20V, VggOVIp=100mMA<br>lLForward rra a<br>Transconductance(1H2) On [e riz | mS | Voe=25V, 1p-100mA<br>input Capacitancea(2) |aCie eae|: 30| pF cove nent ascent ne mente seamen ine<br>Common Source CS rn es pF7<br>Output Capacitance (2) es ee es ee : Vig25V, Vgg2OV, f= IMHz<br>Reverse Transfer 1 Cue a ra pF:<br>Riseen Time {2)(3) it a moenenteommennns ViBOV, Iy=280MA<br>Turn-O f Delay Time (23) | tao HB fs<br>Fall Time (2)(3) it 25 ns<br>(1) Measured under pulsed conditions. Width=300us. Duty cycle <2% (2) Sample test.<br>ae3)  typicalSwitching characteristicsti a graphsd with see500 AUERsourceTiteimpedance datasheet, and <5Sns rise time on a p pulse ggenerator<br>**----- End of picture text -----**<br>


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