# Power MOSFET, P Channel, 100 V, 680 mA, 1.8 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2480637RL/)

**URL**: https://novapart.co/products/BSP316PH6327XTSA1/power-mosfet-p-channel-100-v-680-ma-18-ohm-sot-223
**SKU**: BSP316PH6327XTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2060
**Stock**: 1000+
**Lead Time**: 85 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-680mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vg

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.8W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 680mA |
| Drain Source On State Resistance | 1.8ohm |
| Gate Source Threshold Voltage Max | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2480637RL/)

**BSP316P** 

## **SIPMOS[] Small-Signal-Transistor** 

## **Feature** 

- P-Channel 

- Enhancement mode 

- Logic Level 

- d _v_ /d _t_ rated 

- Pb-free lead plating; ROHS compliant 

- Qualified according to AEC Q101 

- Halogen­free according to IEC61249­2­21 

|**Product Summar**|**Product Summar**|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|
|---|---|---|---|---|---|---|
|_V_DS|||-100|||V|
|_R_DS(on)|||1.8|||Ω|
|_I_D|||-0.68|||A|



**==> picture [169 x 85] intentionally omitted <==**

**----- Start of picture text -----**<br>
PG-SOT223-4-1<br>Drain<br>pin 2/4<br>S [.]<br>Gate<br>pin1<br>Source<br>pin 3<br>**----- End of picture text -----**<br>


|**Type**|**Package**|**Tape and Reel Information**|**Marking**|**Packaging**|
|---|---|---|---|---|
|BSP316P|PG-SOT223-4-1|H6327: 1000pcs/reel|BSP316P|Non dry|



## **Maximum Ratings** , at _T_ j = 25 °C, unless otherwise specified 

|**Maximum Ratingsgss**, atat_T_j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specified||
|---|---|---|---|
|j = 25 °C, unless otherwise specified<br>**Parameter**|j = 25 °C, unless otherwise specified<br>**Symbol**|j = 25 °C, unless otherwise specified<br>**Value**|**Unit**|
|Continuous drain current<br>_T_A=25°C<br>_T_A=70°C|_I_D|-0.68<br>-0.54|A|
|Pulsed drain current<br>_T_A=25°C|_I_D puls|-2.72||
|Reverse diode d_v_/d_t_<br>_I_S=-0.68A,_V_DS=-48V, d_i_/d_t_=-200A/µs,_T_jmax=150°C|d_v_/d_t_|6|kV/µs|
|Gate source voltage|_V_GS|±20|V|
|Power dissipation<br>_T_A=25°C|_P_tot|1.8|W|
|Operatingand storage temperature|_T_j,_T_stg|-55... +150|°C|
|IEC climatic category; DIN IEC 68-1||55/150/56||
|ESD Class<br>JESD22-A114-HBM||Class 1a||



2016-05-30 

Rev. 2.0 Page 1 

|**Thermal Characteristics**<br>**Parameter**<br>**Characteristics**<br>Cafineon~~ee ~~|**Thermal Characteristics**<br>**Parameter**<br>**Characteristics**<br>Cafineon~~ee ~~|**Thermal Characteristics**<br>**Parameter**<br>**Characteristics**<br>Cafineon~~ee ~~||**BSP316P**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|**BSP316P**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|**BSP316P**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|**BSP316P**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|**BSP316P**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|**BSP316P**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|**BSP316P**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|**BSP316P**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|**BSP316P**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||
||Thermal resistance, junction - soldering point|||_R_thJS||-||15||25||K/W|
||(Pin 4)||||||||||||
||||||||||||||
||SMD version, device on PCB:|||_R_thJA|||||||||
||@ min. footprint|||||-||80||115|||
||@ 6 cm2cooling area1)|||||-||48||70|||



|Drain-source breakdown voltage<br>_V_GS=0,_I_D=-250µA<br>~~p~~<br>~~|~~|_V_(BR)DSS<br>~~p~~t<br>~~|~~|tt|-100<br>ttf<br>tt|-<br>tf<br>tt|-<br>tf<br>tt|V|
|---|---|---|---|---|---|
|Gate threshold voltage,_V_GS=_V_DS<br>_I_D=-170µA<br>~~p~~<br>~~|~~|_V_GS(th)<br>~~p~~t<br>~~|~~|tt|-1<br>t tf<br>tt|-1.5<br>tf<br>tt|-2<br>tf<br>tt||
|Zero gate voltage drain current<br>_V_DS=-100V,_V_GS=0,_T_j=25°C<br>_V_DS=-100V,_V_GS=0,_T_j=150°C<br>~~|~~<br>~~t~~<br>~~|~~|_I_DSS<br>~~|~~ |tt<br>~~t~~<br>~~|~~<br>||-<br>-<br>tt<br>~~t~~ty<br>**|**|-0.1<br>-10<br>tt<br>ty|-0.2<br>-100<br>tt<br>ty|µA|
|Gate-source leakage current<br>_V_GS=-20V,_V_DS=0<br>~~|~~<br>~~p~~|_I_GSS<br>~~|~~<br>|<br>~~p~~<br>~~|tt~~|-<br>**|**<br>~~tt~~|-10<br>~~tt~~|-100<br>~~tt~~|nA|
|Drain-source on-state resistance<br>_V_GS=-4.5V,_I_D=-0.61A<br>~~|~~<br>~~p~~|_R_DS(on)<br>~~|~~<br>|<br>~~p~~<br>~~|tt~~|-<br>**|**<br>~~tt~~|1.5<br>~~tt~~|2.3<br>~~tt~~|Ω|
|Drain-source on-state resistance<br>_V_GS=-10V,_I_D=-0.68A<br>~~p~~<br>~~|~~|_R_DS(on)<br>~~p~~<br>~~|tt~~<br>~~| ~~|-<br>~~tt~~<br> ~~tt~~|1.4<br>~~tt~~<br>~~tt~~|1.8<br>~~tt~~<br>~~tt~~||



1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 

2016-05-30 

Rev.2.0 Page 2 

|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Dynamic Characteristics**|||||||||||||||||||
|Transconductance|||_g_fs<br>|_V_DS|≥2*|_I_D|*_R_DS(on)max,<br>_I_D=-0.54A<br>0.5<br>1<br>-<br>~~|~~|||||||||||||||S|
|Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delaytime<br>Rise time<br>Turn-off delaytime<br>Fall time|||_C_iss<br>_V_GS=0,_V_DS=-25V,<br>_f_=1MHz<br>-<br>117<br>146<br>_C_oss<br>-<br>27.7<br>34.5<br>_C_rss<br>-<br>12<br>15<br>_t_d(on)<br>_V_DD=-50V,_V_GS=-10V,<br>_I_D=-0.68A,_R_G=6Ω<br>-<br>4.7<br>7<br>_t_r<br>-<br>7.5<br>11.2<br>_t_d(off)<br>-<br>67.4<br>101<br>_t_f<br>-<br>25.9<br>38.9<br>SEE<br>~~=—~~i~~===~~|||||||||||||||pF<br>ns|
|**Gate Charge Characteristics**|||||||||||||||||||
|Gate to source charge||||_Q_gs|||_V_DD=-80V,_I_D=-0.68A|||-||-0.2|||-0.3|||nC|
|Gate to drain charge||||_Q_gd||||||-||-1.87|||-2.8||||
|Gate charge total||||_Q_g|||_V_DD=-80V,_I_D=-0.68A,|||-||-5.1|||-6.4||||
||||||||_V_GS=0 to -10V||||||||||||
|Gateplateau voltage||||_V_(plateau)|||_V_DD=-80V,_I_D=-0.68A|||-||-2.7|||-|||V|
|**Reverse Diode**|||||||||||||||||||
|Inverse diode continuous||||_I_S|||_T_A=25°C|||-||-|||-0.68|||A|
|forward current|||||||||||||||||||
|Inv. diode direct current,|Inv. diode direct current,pulsed|||_I_SM||||||-||-|||-2.72||||
|Inverse diode forward voltage||||_V_SD|||_V_GS=0,_I_F=-0.68A|||-||-0.85|||-1.2|||V|
|Reverse recoverytime||||_t_rr|||_V_R=-50V,_I_F=_l_S,|||-||44.2|||55.3|||ns|
||||||||||||||||||||
|Reverse recoverycharge||||_Q_rr|||d_i_F/d_t_=100A/µs|||-||56.3|||70.4|||nC|



2016-05-30 

Rev.2.0 Page 3 

**BSP316P** 

## **1 Power dissipation** 

_P_ tot = _f_ ( _T_ A) 

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**----- Start of picture text -----**<br>
1.9<br>W PTET T TTT TTT TT<br>BERCCECCEC EEE<br>1.6  PEPREPEE<br>EET<br>PCCPXEEEEPOCO<br>1.4  NCEE<br>Hitt IN tt<br>1.2<br>FERENCE<br>PECLCEAIY EE<br>1  FEC ENC EEE<br>PPT<br>0.8  PTT TTT TP NET<br>f CCCEEEEEEN TT TTT TQ yyy<br>0.6  FECEEEEPEEPENE<br>0.4  PieF{{f{{{{FECEECCEECECENEPPT TPttPrint tt tN ttTe<br>0.2<br>PEELE<br>0 PEEP EENEEN<br>0 20 40 60 80 100 120 °C 160<br>T A<br>tot<br>P<br>**----- End of picture text -----**<br>


## **2 Drain current** 

_I_ D = _f_ ( _T_ A) parameter: | _V_ GS| ≥ 10V 

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**----- Start of picture text -----**<br>
-0.75<br>A<br>SR EeeRRGGRnne<br>Ss i<br>TPN<br>-0.6 PILLINGTT TTT<br>-0.55-0.5 PTTPTT TINETNETE EEE<br>CCAS<br>-0.45 \<br>-0.35-0.4 PTT ET LETT ENEELLE<br>PTT TT ETT NET<br>-0.3<br>PTT TTpT TTX<br>-0.25 \<br>-0.15-0.2 PTETPTT TTTTTT TTT TT TN<br>-0.1 PT T TTTTT<br>-0.050 SCOPTT TTT TET TTT [TTT]<br>0 20 40 60 80 100 120 °C 160<br>T A<br>D<br>I<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

_I_ D = _f_ ( _V_ DS ) 

parameter : _D_ = 0 , _T_ A = 25°C 

## **4 Transient thermal impedance** 

_Z_ thJA = _f_ ( _t_ p) 

## parameter : _D_ = _t_ p/ _T_ 

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**----- Start of picture text -----**<br>
-10 1  10 2<br>e T K/W A=<br>A a ee a eerie<br>t p = 250.0µs<br>Te TT<br>AT S 10 1  | ome TT TTT<br>FHTTT I SCENT mn suZaIts 4<br>-10 0   1 ms<br>F A SREP ET<br> 10 ms 10 0<br>D = 0.50<br>0.20<br>-10 -1  | AW LS ANINS NA TT CTIST T TTISSUESFH EST T S TTT TITS 0.10 Im|<br>NN tt i AN A<br>0.05<br>10 -1  single pulse<br>Seti meeiitimec eit meet a Se 0.02<br>N fl hy 0.01<br>DC<br>-10 -2  Co C o 10 -2  =<br>-10  [-1 ] -10  [0 ] -10  [1 ] -10  [2 ] V -10  [3 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] 10  [-1 ] 10  [0 ] 10  [1 ] 10  [2 ] s 10  [4 ]<br>— V DS — 1 t p<br>I  D<br>  /<br>DS<br>V<br>  =<br>DS(on)<br>R<br>thJA<br>D<br>I Z<br>**----- End of picture text -----**<br>


2016-05-30 

Rev.2.0 Page 4 

**BSP316P** 

## **6 Typ. drain-source on resistance** 

## **5 Typ. output characteristic** 

_R_ DS(on) = _f_ ( _I_ D) 

_I_ D = _f_ ( _V_ DS) parameter: _T_ j =25°C, - _V_ GS 

parameter: _T_ j =25°C, - _V_ GS 

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**----- Start of picture text -----**<br>
2.4 7<br>A 10V 2.2V<br>5V 2.4V<br>Ω<br>4.4V 2.8V<br>2<br>3.6V Ge = IEE 3.2V<br>3.2V 3.6V<br>1.8<br>2.8V 5 4.4V<br>2.4V 5V<br>1.6 saay 6//4un e en ean<br>2.2V 10V<br>1.4 C= 4 [Le<br>1.2<br>1 3<br>A I<br>0.8<br>2<br>0.6<br>0.4<br>1<br>LSS<br>0.2<br>nnnnnennnAie<br>0 0<br>0 | [cauuunmmmnee] 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0.4 0.8 1.2 1.6 | A 2.4<br>-V DS - I D<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>D==  f  (  V GS ); | ); | V DS| ≥  2 x | I D| x | x  R DS(on)max g fs = f( I D)<br>parameter:  T j = 25 °C = 25 °C parameter:  T j =25°C<br>3.5 1.8<br>A<br>S<br>TUT) §= 6[[<br>TTT [LAT<br>2.5<br>1.2<br>2<br>He spre<br>0.9<br>TT ATT<br>1.5<br>0.6<br>ICO .  eee<br>1<br>PO 0.3 A<br>0.5<br>TOV ELLE<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 0 0.4 0.8 1.2 1.6 2 2.4 A 3.2<br>- V GS - I D<br>D DS(on)<br>I - R<br>I D- g fs<br>**----- End of picture text -----**<br>


## **7 Typ. transfer characteristics** 

_I_ D== _f_ ( _V_ GS ); | ); | _V_ DS| ≥ 2 x | _I_ D| x | x _R_ DS(on)max parameter: _T_ j = 25 °C = 25 °C 

Rev.2.0 Page 5 

2016-05-30 

**BSP316P** 

## **10 Typ. gate threshold voltage** 

## **9 Drain-source on-state resistance** 

_V_ GS(th) = _f_ ( _T_ j) 

_R_ DS(on) = _f_ ( _T_ j) 

parameter: _V_ GS = _V_ DS 

parameter : _I_ D = -0.68 A, _V_ GS = -10 V 

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5<br>Ω<br>PTL ELL EELEL TI<br>4<br>POA)<br>3.5<br>Toor<br>3 CCECEECECEEL) =<br>2.5 PELL EEL ee<br>SEeaeeapeda 98%<br>2<br>1<br>cere of<br>1.5 typ<br>Seer TTT<br>1<br>—<br>0.50 LEEPELL EEELEELL<br>-60 -20 20 60 100 °C 180<br>_ T j<br>DS(on) GS(th)<br>R V<br>**----- End of picture text -----**<br>


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2.4<br>V<br>98%<br>re<br>2<br>PRS<br>1.8<br>EE typ.<br>1.6<br>FRRARK, HEME<br>1.4<br>1.2 ef<br>2%<br>1 EER<br>PSE ESS<br>0.8<br>of GES<br>0.6<br>~E EEE<br>EEE EE<br>0.4<br>Seeeeeeeeen<br>0.2<br>0 ~EEELELELL<br>-60 -20 20 60 100 °C 160<br>= T j<br>GS(th)<br>V<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

## _C_ = _f_ ( _V_ DS) 

parameter: _V_ GS=0, _f_ =1 MHz, _T_ j = 25 °C 

## **12 Forward character. of reverse diode** 

_I_ F = _f_ (VSD) 

parameter: _T_ j 

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10 3  -10 1<br>pF A<br>=== EEE<br>C iss<br>S e EEESEES<br>10 2  -10 0<br>i YefA<br>C oss<br>PX\P | Se | i tf YF | | | tt | | tf<br>C rss<br>| 10 1  Po AS -10 -1  PT TA AALE LE EET<br>COPEERZEE of (Te<br>T j = 25 °C typ<br>T j = 150 °C typ<br>eeP| | | | | | [| ff _OetT PEN TT jj = 25 °C (98%) = 150 °C (98%) Lnae|tt<br>10 0  ========—PLT ELE -10 -2  q Th e LL<br>0 4 8 12 16 20 24 28 V 36 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3<br>= - V DS _ V SD<br>F<br>C I<br>**----- End of picture text -----**<br>


2016-05-30 

Rev.2.0 Page 6 

**BSP316P** 

## **13 Typ. gate charge** 

## _V_ GS = _f_ ( _Q_ Gate) 

## **14 Drain-source breakdown voltage** 

_V_ (BR)DSS = _f_ ( _T_ j) 

parameter: _I_ D = -0.68 A pulsed, _T_ j = 25 °C 

**==> picture [226 x 261] intentionally omitted <==**

**----- Start of picture text -----**<br>
-16  PTO L LL<br>V<br>P CO<br>PEECELELEEL<br>-12  FOECCLELET VA<br>BRA<br>-10  SORGGGeey// one<br>POCA<br>-8<br>COOOL<br>POECCLZECLEE<br>-6<br>POCO Aer<br>POCA<br>-4  SKKaane// 0.2 0.5  VV DS maxDS max PEELPPP<br>-2  PeZN 0.8  V DS max FEEL<br>EEE POE<br>PEEL FEEL<br>0<br>0 1 2 3 4 5 6 7 nC 8.5<br>|Q G |<br>GS<br>V<br>**----- End of picture text -----**<br>


**==> picture [227 x 260] intentionally omitted <==**

**----- Start of picture text -----**<br>
-120<br>V<br>SEEeEGeEneee<br>CEE EET<br>-114  FEE eee<br>-112<br>ase<br>-110<br>EEA<br>-108<br>ae<br>-106<br>aeSEaneee<br>-104<br>SRGEaeeeee<br>-102<br>SAGA<br>-100  /<br>-98  pt] TAT<br>-96  P| yA LT TT Ty ty<br>-94  PITALALLELE TTT<br>-92 -90  PEEELL L L L<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br>


2016-05-30 

Rev.2.0 Page 7 

**BSP316P** 

## **Package Outline SOT-223** 

## **Footprint** 

Soldering type: Reflow soldering 

Soldering type: Wave soldering 

## **Tape and Reel** 

## Dimensions in mm 

2016-05-30 

Rev.2.0 Page 8 

**BSP316P** 

## BSP316P 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2016-06-10|Release of final version|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

9 



## Links

- [View this product on Novapart](https://novapart.co/products/BSP316PH6327XTSA1/power-mosfet-p-channel-100-v-680-ma-18-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/bsp316ph6327xtsa1/mosfet-p-ch-100v-0-68a-sot-223/dp/2480637RL)
---

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