# Power MOSFET, N Channel, 400 V, 500 mA, 2.2 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2480633RL/)

**URL**: https://novapart.co/products/BSP298H6327XUSA1/power-mosfet-n-channel-400-v-500-ma-22-ohm-sot-223
**SKU**: BSP298H6327XUSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2980
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Channel Type | N Channel |
| Power Dissipation | 1.8W |
| Drain Source On State Resistance | 2.2ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2480633RL/)

**BSP298** 

## **SIPMOS[ ®] Small-Signal Transistor** 

- N channel 

- Enhancement mode 

- Avalanche rated 

- _V_ = 2.1 ... 4.0 V GS(th) 

- Pb-free lead plating; RoHS compliant 

- Qualified according to AEC Q101 

• Halogen­free according to IEC61249­2­21 aa 

1 Pin 1 Pin 2 Pin 3 Pin 4 G D S D source pin3 +++ 

|**Type**|**_V_DS**|**_I_D**|**_R_DS(on)**|**Package**||**Marking**|
|---|---|---|---|---|---|---|
|BSP298|400 V|0.5 A|3Ω|PG-SOT223||BSP298|
||||||||
|**Type**|**Pb-free**||**Tape and Reel Information**||**Packaging**||
|BSP298|Yes||H6327||Dry||



## **Maximum Ratings** 

|**Maximum Ratings**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|**Unit**|
|Continuous drain current<br>_T_A= 26 °C|_I_D|0.5|A|
|DC drain current, pulsed<br>_T_A= 25 °C|_I_Dpuls|2||
|Avalanche energy, single pulse<br>_I_D= 1.35 A,_V_DD= 50 V,_R_GS= 25Ω<br>_L_= 125 mH,_T_j= 25 °C|_E_AS|130|mJ|
|Gate source voltage|_V_GS|±20|V|
|Power dissipation<br>_T_A= 25 °C|_P_tot|1.8|W|
|ESD Class<br>JESD22-A114-HBM||Class 1b||



2012-11-29 

Rev. 2.6 

1 

**BSP298** 

## **Maximum Ratings** 

|**Parameter**|**Symbol**<br>ee<br>ee|**Values**<br>ee<br>eee|**Unit**<br>ee<br>eee|
|---|---|---|---|
|Chip or operating temperature|_T_j<br>ee<br>ee<br>ee|-55 ... + 150<br>ee<br>eee<br>eee|°C<br>ee<br>eee<br>eee<br>eee|
|Storage temperature|_T_stg<br>ee <br>ee<br>ee|-55 ... + 150<br> eee<br>eee<br>eee||
|Thermal resistance, chip to ambient air|_R_thJA<br>ee <br>ee|≤70<br> eee<br>eee|K/W<br>eee<br>eee<br>eee|
|Therminal resistance, junction-soldering point1)|_R_thJS<br>ee <br>a <br>ee|≤10<br> eee<br> eee<br>eee||
|DIN humidity category, DIN 40 040|ee<br>ee|E<br>eee<br>ee|eee<br>ee|
|IEC climatic category, DIN IEC 68-1|ee <br>ee|55 / 150 / 56<br> eee<br>ee||



1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm[2] copper area for drain connection 

|Drain- source breakdown voltage<br>_V_GS= 0 V,_I_D= 0.25 mA,_T_j= 0 °C|_V_(BR)DSS<br>~~|~~|400<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~|V<br>~~|~~<br>~~|~~|
|---|---|---|---|---|---|
|Gate threshold voltage<br>_V_GS=_V_DS,_I_D= 1 mA|_V_GS(th)|2.1<br>~~|~~|3<br>~~|~~|4<br>~~|~~||
|Zero gate voltage drain current<br>_V_DS= 400 V,_V_GS= 0 V,_T_j= 25 °C<br>_V_DS= 400 V,_V_GS= 0 V,_T_j= 125 °C|_I_DSS|-<br>-<br>||10<br>0.1<br>|||100<br>1<br>||µA|
|Gate-source leakage current<br>_V_GS= 20 V,_V_DS= 0 V|_I_GSS<br>||-<br>|<br>|<br>||10<br>|<br>||<br>||100<br>|<br>||nA|
|Drain-Source on-state resistance<br>_V_GS= 10 V,_I_D= 0.5 A|_R_DS(on)<br>||-<br>|<br>|<br>||2.2<br>| |<br>|<br>||3<br>|<br>||Ω|



2012-11-29 

Rev. 2.6 

2 

**BSP298** 

> **Electrical Characteristics,** at _T_ j = 25°C, unless otherwise specified 

|Transconductance<br>_V_DS≥2*_I_D *_R_DS(on)max,_I_D= 0.5 A|_g_fs<br>~~|~~|0.5<br>~~|~~<br>|<br>||1.2<br>~~|~~<br>|<br>|||-<br>~~|~~<br>||S|
|---|---|---|---|---|---|
|Input capacitance<br>_V_GS= 0 V,_V_DS= 25 V,_f_= 1 MHz|_C_iss<br>ef|-<br>|<br>ef<br>|<br>||300<br>|<br>ef<br>||<br>||400<br>ef<br>||pF|
|Output capacitance<br>_V_GS= 0 V,_V_DS= 25 V,_f_= 1 MHz|_C_oss<br>||-<br>|<br>|<br>||50<br>| |<br>|<br>||75<br>|<br>|||
|Reverse transfer capacitance<br>_V_GS= 0 V,_V_DS= 25 V,_f_= 1 MHz|_C_rss|-<br>||20<br>||30||
|Turn-on delay time<br>_V_DD= 30 V,_V_GS= 10 V,_I_D= 0.3 A<br>_R_GS= 50Ω|_t_d(on)|-|10|15|ns|
|Rise time|_t_r|||||
|||||||
|||-|25|40||
||_t_d(off)|||||
|||||||
|||-|30|40||
||_t_f|||||
|||||||
|||-|20|30||



3                                                                2012-11-2 

Rev. 2.6 

**BSP298** 

> **Electrical Characteristics,** at _T_ j = 25°C, unless otherwise specified 

|Inverse diode continuous forward current<br>_T_A= 25 °C|_I_S<br>~~|~~|-<br>~~|~~<br>||-<br>~~|~~<br>||0.5<br>~~|~~|A|
|---|---|---|---|---|---|
|Inverse diode direct current,pulsed<br>_T_A= 25 °C|_I_SM<br>eT|-<br>|<br>eT<br>||-<br>|<br>eT<br>||2<br>eT||
|Inverse diode forward voltage<br>_V_GS= 0 V,_I_F= 1 A,_T_j= 25 °C|_V_SD<br>ef]|-<br>ef]<br>||0.95<br>ef]<br>||1.2<br>ef]|V|
|Reverse recovery time<br>_V_R= 100 V,_I_F=_l_S,d_i_F/d_t_= 100 A/µs|_t_rr<br>ef]|-<br>|<br>ef]|300<br>|<br>ef]|-<br>ef]|ns|
|Reverse recovery charge<br>_V_R= 100 V,_I_F=_l_S,d_i_F/d_t_= 100 A/µs|_Q_rr<br>et|-<br>et|2.5<br>et|-<br>et|µC|



4                                                            2012-11-29 

Rev. 2.6 

**BSP298** 

## **Power dissipation** 

_P_ tot = ƒ( _T_ A) 

## **Drain current** 

_I_ D = ƒ( _T_ A) parameter: _V_ GS ≥ 10 V 

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**Safe operating area** _I_ D=f( _V_ DS) parameter : _D_ = 0, _T_ C=25°C 

## **Transient thermal impedance** 

_Z_ th JA = ƒ( _t_ p) parameter: _D = t_ / _T_ p 

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2012-11-29 

5 

Rev. 2.6 

**BSP298** 

## **Typ. output characteristics** 

_I_ D = ƒ( _V_ DS) 

parameter: _t_ p = 80 µs , _T_ j = 25 °C 

## **Typ. drain-source on-resistance** 

_R_ DS (on) = ƒ( _I_ D) 

parameter: _t_ p = 80 µs, _T_ j = 25 °C 

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Typ. transfer characteristics _I_ D _= f_ ( _V_ GS) parameter: _t_ p = 80 µs 

Typ. forward transconductance _g_ fs = _f_ ( _I_ D) parameter: _t_ p = 80 µs, 

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6                                                            2012-11-29 

Rev. 2.6 

**BSP298** 

## **Drain-source on-resistance** 

_R_ DS (on) = ƒ( _T_ j) 

## parameter: _I_ D = 0.5 A, _V_ GS = 10 V 

## **Gate threshold voltage** 

_V_ GS (th) = ƒ( _T_ j) parameter: _V_ GS = _V_ DS, _I_ D = 1 mA 

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## **Typ. capacitances** 

_C_ = _f_ ( _V_ DS) 

parameter: _V_ GS=0V, _f_ = 1 MHz 

## **Forward characteristics of reverse diode** 

_I_ F = ƒ( _V_ SD) parameter: _T_ j _, t_ p = 80 µs 

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7                                                                      2012-11-29 

Rev. 2.6 

**BSP298** 

## **Avalanche energy** _E_ AS = ƒ( _T_ j) parameter: _I_ D = 1.35 A, _V_ DD = 50 V _R_ GS = 25 Ω, _L_ = 125 mH 

## **Drain-source breakdown voltage** 

_V_ (BR)DSS = ƒ( _T_ j) 

**==> picture [484 x 260] intentionally omitted <==**

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**Safe operating area** _I_ D=f( _V_ DS) parameter : _D_ = 0.01, _T_ C=25°C 

8 

2012-11-29 

Rev. 2.6 

**BSP298** 

## **Package outlines** 

SOT-223 Dimensions in mm 

9                                                               2012-11-29 

Rev. 2.6 

**BSP298** 

10 

Rev. 2.6 

2012-11-29 



## Links

- [View this product on Novapart](https://novapart.co/products/BSP298H6327XUSA1/power-mosfet-n-channel-400-v-500-ma-22-ohm-sot-223)
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- [Supplier page](https://es.farnell.com/en-ES/infineon/bsp298h6327xusa1/mosfet-n-ch-400v-0-5a-sot-223/dp/2480633RL)
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