# Power MOSFET, P Channel, 60 V, 1.9 A, 0.3 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2480629RL/)

**URL**: https://novapart.co/products/BSP171PH6327XTSA1/power-mosfet-p-channel-60-v-19-a-03-ohm-sot-223
**SKU**: BSP171PH6327XTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2710
**Stock**: 1000+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-1.9A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.21ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.8W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.9A |
| Drain Source On State Resistance | 0.3ohm |
| Gate Source Threshold Voltage Max | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2480629RL/)

**BSP171P** 

## **SIPMOS[®] Small-Signal-Transistor** 

## **Features** 

- P-Channel 

- Enhancement mode 

## **Product Summary** 

|_V_DS||-60||V|
|---|---|---|---|---|
||||||
|_R_DS(on),max||0.3||Ω|
||||||
|_I_D||-1.9||A|



- Logic level 

- Avalanche rated 

- d _v_ /d _t_ rated 

- Pb-free lead plating; RoHS compliant 

**==> picture [56 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
PG-SOT223<br>**----- End of picture text -----**<br>


- Qualified according to AEC Q101 

- Halogen­free according to IEC61249­2­21 

||(GS) Halogen-Free|i _<br>Halogen-Free aA|!|3|
|---|---|---|---|---|
|||||**Packaging**|
|**Type**|**Package**|**Tape and Reel Information**|**Marking**||
|||||Non dry|
|BSP171P|PG-SOT223|H6327: 1000 pcs/reel|BSP171P||



|**Parameter**|**Symbol **|**Conditions**<br>~~—__~~<br>~~—__~~|**Unit**<br>**Value**<br>**steady state**<br>~~—__~~<br>~~—__~~|**Unit**|
|---|---|---|---|---|
|Continuous drain current|_I_D|_T_A=25 °C1)<br>~~—__~~<br>~~ee~~|A<br>-1.9<br>-1.5<br>-7.6<br>~~—__~~<br>~~ee~~<br>~~es~~<br>~~es~~|A|
|||_T_A=70 °C1)<br>~~es~~|||
|Pulsed drain current|_I_D,pulse<br>~~_~~<br>~~__~~|_T_A=25 °C<br>~~es~~|||
|Avalanche energy, single pulse|_E_AS<br>~~__~~<br>~~rf~~<br>~~|_|~~|_I_D=-1.9 A,_R_GS=25Ω<br>~~rf~~<br>~~|_|~~|mJ<br>70<br>~~rf~~<br>~~|_|~~|mJ|
|Reverse diode d_v_/d_t_|d_v_/d_t_<br>~~__~~<br>~~rf~~<br>~~|_|~~|_I_D=-1.9 A,<br>_V_DS=-48 V,<br>d_i_/d_t_=-200 A/µs,<br>_T_j,max=150 °C<br>~~rf~~<br>~~|_|~~|kV/µs<br>-6<br>~~rf~~<br>~~|_|~~|kV/µs|
|Gate source voltage|_V_GS<br>~~|_|~~|~~|_|~~|V<br>±20<br>~~|_|~~|V|
|Power dissipation|_P_tot<br>~~|_|~~<br>~~Ss~~|_T_A=25 °C1)<br>~~|_|~~<br>~~Ss~~|W<br>1.8<br>~~|_|~~<br>~~Ss~~|W|
|Operating and storage temperature|_T_j,_T_stg<br>~~|_|~~<br>~~Ss~~<br>~~a~~|~~|_|~~<br>~~Ss~~<br>~~a~~|°C<br>-55 ... 150<br>~~|_|~~<br>~~Ss~~<br>~~a~~|°C|
|IEC climatic category; DIN IEC 68-1|~~a~~<br>~~ee~~|~~a~~<br>~~ee~~|55/150/56<br>~~a~~<br>~~ee~~||
|ESD Class; JESD22-A114-HBM|~~ee~~|~~ee~~|Class 1a<br>~~ee~~||



20 12 - 11 -26 

Rev 2. 7 

page 1 

|**BSP171P**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Thermal characteristics**<br>**Values**<br>Gatineon~~es~~<br>~~ee ee~~|
|---|
|Thermal resistance,<br>junction - soldering point<br>_R_thJS<br>-<br>-<br>25<br>K/W|
|Thermal resistance,<br>junction - ambient<br>_R_thJA<br>minimal footprint,<br>steady state<br>-<br>-<br>110|
|6 cm2cooling area1),<br>steady state<br>-<br>-<br>70|
|**Electrical characteristics,**at_T_j=25 °C, unless otherwise specified|
|**Static characteristics**|
|Drain-source breakdown voltage<br>_V_(BR)DSS _V_GS=0 V,_I_D=-250 µA<br>-60<br>-<br>-<br>V<br>Gate threshold voltage<br>_V_GS(th)<br>_V_DS=_V_GS,<br>_I_D=-460 µA<br>-1<br>-1.5<br>-2<br>Zero gate voltage drain current<br>_I_DSS<br>_V_DS=-60 V,_V_GS=0 V,<br>_T_j=25 °C<br>-<br>-0.1<br>-1<br>µA<br>_V_DS=-60 V,_V_GS=0 V,<br>_T_j=125 °C<br>-<br>-10<br>-100<br>Gate-source leakage current<br>_I_GSS<br>_V_GS=-20 V,_V_DS=0 V<br>-<br>-10<br>-100<br>nA<br>Drain-source on-state resistance<br>_R_DS(on)<br>_V_GS=-4.5 V,<br>_I_D=-1.5 A<br>-<br>0.3<br>0.45<br>Ω<br>_V_GS=-10 V,<br>_I_D=-1.9 A<br>-<br>0.21<br>0.3<br>Transconductance<br>_g_fs<br>|_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=-1.5 A<br>1.4<br>2.7<br>-<br>S<br>1)2<br>~~a ee~~<br>~~ee ee~~<br>~~p|tT~~<br>~~care~~<br>~~pt~~<br>~~| |~~<br>~~a ee~~<br>~~ee ee~~<br>~~een~~<br>~~pf~~<br>~~| |~~<br>~~pi~~<br>~~otTt~~|



1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

20 12 - 11 -26 

Rev 2. 7 

page 2 

||Gafineon|||||||
|---|---|---|---|---|---|---|---|
||Gafineon|||||**BSP171P**||
|||||||||
||**Parameter**|**Symbol **|**Conditions**||**Values**||**Unit**|
|||||**min.**|**typ.**|**max.**||
||**Dynamic characteristics**|||||||
|Input capacitance<br>_C_iss<br>-<br>365<br>460<br>pF<br>Output capacitance<br>_C_oss<br>-<br>105<br>135<br>Reverse transfer capacitance<br>_C_rss<br>-<br>40<br>55<br>Turn-on delay time<br>_t_d(on)<br>-<br>6<br>8<br>ns<br>Rise time<br>_t_r<br>-<br>25<br>33<br>Turn-off delay time<br>_t_d(off)<br>-<br>208<br>276<br>Fall time<br>_t_f<br>-<br>87<br>130<br>Gate Charge Characteristics2)<br>_V_GS=0 V,<br>_V_DS=-25 V,_f_=1 MHz<br>_V_DD=-25 V,<br>_V_GS=-10 V,<br>_I_D=-1.9 A,_R_G=6Ω<br>~~oe~~||||||||
||Gate to source charge|_Q_gs||-|-1.2|-1.6|nC|
||Gate to drain charge|_Q_gd|_V_DD=-48 V,_I_D=1.9 A,|-|-5|-7||
||Gate charge total|_Q_g|_V_GS=0 to -10 V|-|-13|-20||
||Gate plateau voltage|_V_plateau||-|-3|-|V|
||Output charge|_Q_oss|_V_DD=-15 V,_V_GS=0 V|-|-5|-7||



|**Reverse Diode**|||||||
|---|---|---|---|---|---|---|
|Diode continuous forward current|_I_S|_T_A=25 °C|-|-|-1.9|A|
|Diode pulse current|_I_S,pulse||-|-|-7.6||
|Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=1.9 A,<br>_T_j=25 °C|-|-0.84|-1.1|V|
|Reverse recovery time|_t_rr|_V_R=-30 V,_I_F=|_I_S|,<br>d_i_F/d_t_=100 A/µs|-|80|120|ns|
|Reverse recovery charge|_Q_rr||-|-125|-190|nC|



2) See figure 16 for gate charge parameter definition 

20 12 - 11 -26 

Rev 2. 7 

page 3 

**BSP171P** 

## **1 Power dissipation** 

_P_ tot=f( _T_ A) 

## **2 Drain current** 

_I_ D=f( _T_ A); | _V_ GS|≥10 V 

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**----- Start of picture text -----**<br>
2 2<br>1.5 1.5<br>1 1<br>0.5 0.5<br>0 ND 0<br>0 40 80 120 160 0 40 80 120 160<br>T  A [°C] T  A [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>I  D=f( V  DS);  T  A=25 °C [1)] ;  D  =0 Z  thJA=f( t  p)<br>parameter:  t  p parameter:  D  = t  p/ T<br>10 [1] 10 [2]<br>10 µs<br>100 µs<br>1 ms 0.5<br>10 ms<br>0.2<br>10 [0] 10 [1]<br>100 ms<br>0.1<br>0.05<br>limited by on-state 0.02<br>resistance<br>DC<br>10 [-1] 10 [0] 0.01<br>single pulse<br>10 [-2] AR 10 [-1]<br>0.1 1 10 100 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2]<br>-V  DS [V] t  p [s]<br>Rev 2. 7 page 4  20 12 - 11 -26<br> [W]  [A]<br> tot -I  D<br>P<br> [A]  [K/W]<br> D<br>-I<br> thJS<br>Z<br>**----- End of picture text -----**<br>


Rev 2. 7 

**BSP171P** 

## **5 Typ. output characteristics** 

## **6 Typ. drain-source on resistance** 

**==> picture [467 x 651] intentionally omitted <==**

**----- Start of picture text -----**<br>
I  D=f( V  DS);  T  j=25 °C R  DS(on)=f( I  D);  T  j=25 °C<br>parameter:  V  GS parameter:  V  GS<br>5 600<br>-5.5 V -4.5 V<br>-4 V<br>-5 V<br>-3 V<br>-10 V 500<br>4<br>-3.5 V<br>400<br>-4 V<br>3<br>-3.5 V -4.5 V<br>300 -5 V<br>-5.5 V<br>2<br>-10 V<br>200<br>-3 V<br>1<br>100<br>-2.5 V<br>0 Ee 0<br>0 1 2 3 4 5 0 1 2 3 4<br>-V  DS [V] -I  D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>I  D=f( V  GS); | V  DS|>2| I  D| R  DS(on)max g  fs=f( I  D);  T  j=25 °C<br>parameter:  T  j<br>6 5<br>5<br>4<br>4<br>3<br>3<br>2<br>2<br>1<br>1<br>C °125 C °25<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4<br>-V  GS [V] -I  D [A]<br>]<br>Ω<br> [m<br> [A]<br> D<br>-I<br> DS(on)<br>R<br> [A]  [S]<br> D  fs<br>-I g<br>**----- End of picture text -----**<br>


20 12 - 11 -26 

Rev 2. 7 

page 5 

**BSP171P** 

## **9 Drain-source on-state resistance** 

_R_ DS(on)=f( _T_ j); _I_ D=-1.9 A; _V_ GS=-10 V 

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**----- Start of picture text -----**<br>
500<br>400<br>98 %<br>300<br>200<br>typ.<br>100<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br>]<br>Ω<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

_C_ =f( _V_ DS); _V_ GS=0 V; _f_ =1 MHz 

## **10 Typ. gate threshold voltage** 

_V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=-460 µA 

**==> picture [226 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2.5<br>2 max.<br>1.5 typ.<br>min.<br>1<br>0.5<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [V]<br> GS(th)<br>-V<br>**----- End of picture text -----**<br>


## **12 Forward characteristics of reverse diode** 

_I_ F=f( _V_ SD) 

parameter: _T_ j 

**==> picture [224 x 266] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [3]<br>Ciss<br>Coss<br>10 [2]<br>Crss<br>10 [1]<br>0 10 20 30<br>-V  DS [V]<br>  [pF]<br>C<br>**----- End of picture text -----**<br>


**==> picture [224 x 266] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [1] 25  ° C, typ<br>150 °C, typ 150 °C, 98%<br>10 [0] 25  ° C, 98%<br>10 [-1]<br>10 [-2]<br>0 0.5 1 1.5<br>-V  SD [V]<br> [A]<br>I  F<br>**----- End of picture text -----**<br>


20 12 - 11 -26 

Rev 2. 7 

page 6 

**BSP171P** 

## **13 Avalanche characteristics** 

## **14 Typ. gate charge** 

_V_ GS=f( _Q_ gate); _I_ D=-1.9 A pulsed parameter: _V_ DD 

_I_ AS=f( _t_ AV); _R_ GS=25 Ω 

parameter: _T_ j(start) 

**==> picture [462 x 610] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 12<br>0.5 VBR(DSS)<br>10<br>C °25 8 0.2 VBR(DSS)<br>0.8 VBR(DSS)<br>1 C °100 6<br>C °125<br>4<br>2<br>0.1 0<br>1 10 100 1000 0 5 10 15<br>t  AV [µs] Q  gate [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br> BR(DSS)=f(=f( T  j); );  I  D=-1 mA=-1 mA<br>70<br>V GS<br>65 Q g<br>60<br>55<br>V<br>gs(th)<br>50<br>45<br>Q  g(th) Q  sw Q gate<br>40 Q  gs Q  gd<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [A]  [V]<br> AV  GS<br>-I V<br> [V]<br> BR(DSS)<br>-V<br>**----- End of picture text -----**<br>


## **15 Drain-source breakdown voltage** 

_V_ BR(DSS)=f(=f( _T_ j); ); _I_ D=-1 mA=-1 mA 

20 12 - 11 -26 

Rev 2. 7 

page 7 

**BSP171P** 

## **Package Outline** 

## **SOT-223: Outline** 

**Footprint** 

**==> picture [51 x 28] intentionally omitted <==**

**----- Start of picture text -----**<br>
Packaging<br>Tape<br>**----- End of picture text -----**<br>


Dimensions in mm 

20 12 - 11 -26 

Rev 2. 7 

page 8 

**BSP171P** 

20 12 - 11 -26 

Rev 2. 7 

page 9 



## Links

- [View this product on Novapart](https://novapart.co/products/BSP171PH6327XTSA1/power-mosfet-p-channel-60-v-19-a-03-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/bsp171ph6327xtsa1/mosfet-p-ch-60v-1-9a-sot-223-4/dp/2480629RL)
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