BSN20-7

**BSN20** [ 

## **N-CHANNEL ENHANCEMENT MODE FIELD MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(ON)**|**ID **<br>**TA = +25°C**|
|50V|1.8 @VGS= 10V|500mA|
||2.0 @VGS= 4.5V|450mA|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Description and Applications** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Backlighting 

- DC-DC Converters 

- Power Management Functions 

## **Mechanical Data** 

- Case: SOT23 

- Case Material: Molded Plastic “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 **e3** 

- Terminal Connections: See Diagram 

- Weight: 0.008 grams (Approximate) 

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D<br>SOT23<br>D<br>G<br>@ &) G S<br>S<br>Top View  Internal Schematic  Top View<br>**----- End of picture text -----**<br>


## Top View 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
|---|---|---|---|
|||||
|**Part Number**|**Qualification**|**Case**|**Packaging**|
|BSN20-7|Standard|SOT23|3000/Tape & Reel|



Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

|Date CodeKey<br>**Year**<br>**2009**<br>-<br>**2019**<br>**2020**<br>**2021**<br>**Code**<br>W<br>-<br>G<br>H<br>I<br>**N20**<br>**YM**<br>~~[——}— +}~~|Date CodeKey<br>**Year**<br>**2009**<br>-<br>**2019**<br>**2020**<br>**2021**<br>**Code**<br>W<br>-<br>G<br>H<br>I<br>**N20**<br>**YM**<br>~~[——}— +}~~|Date CodeKey<br>**Year**<br>**2009**<br>-<br>**2019**<br>**2020**<br>**2021**<br>**Code**<br>W<br>-<br>G<br>H<br>I<br>**N20**<br>**YM**<br>~~[——}— +}~~|Date CodeKey<br>**Year**<br>**2009**<br>-<br>**2019**<br>**2020**<br>**2021**<br>**Code**<br>W<br>-<br>G<br>H<br>I<br>**N20**<br>**YM**<br>~~[——}— +}~~|Date CodeKey<br>**Year**<br>**2009**<br>-<br>**2019**<br>**2020**<br>**2021**<br>**Code**<br>W<br>-<br>G<br>H<br>I<br>**N20**<br>**YM**<br>~~[——}— +}~~|Date CodeKey<br>**Year**<br>**2009**<br>-<br>**2019**<br>**2020**<br>**2021**<br>**Code**<br>W<br>-<br>G<br>H<br>I<br>**N20**<br>**YM**<br>~~[——}— +}~~|Date CodeKey<br>**Year**<br>**2009**<br>-<br>**2019**<br>**2020**<br>**2021**<br>**Code**<br>W<br>-<br>G<br>H<br>I<br>**N20**<br>**YM**<br>~~[——}— +}~~|Date CodeKey<br>**Year**<br>**2009**<br>-<br>**2019**<br>**2020**<br>**2021**<br>**Code**<br>W<br>-<br>G<br>H<br>I<br>**N20**<br>**YM**<br>~~[——}— +}~~|Date CodeKey<br>**Year**<br>**2009**<br>-<br>**2019**<br>**2020**<br>**2021**<br>**Code**<br>W<br>-<br>G<br>H<br>I<br>**N20**<br>**YM**<br>~~[——}— +}~~|Date CodeKey<br>**Year**<br>**2009**<br>-<br>**2019**<br>**2020**<br>**2021**<br>**Code**<br>W<br>-<br>G<br>H<br>I<br>**N20**<br>**YM**<br>~~[——}— +}~~|Date CodeKey<br>**Year**<br>**2009**<br>-<br>**2019**<br>**2020**<br>**2021**<br>**Code**<br>W<br>-<br>G<br>H<br>I<br>**N20**<br>**YM**<br>~~[——}— +}~~|**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>J<br>K<br>L<br>M<br>N<br>N20 = Product Type Marking Code<br>YM = Date Code Marking<br>Y or Y = Year (ex: G = 2019)<br>M = Month (ex: 9 = September)<br>~~| — |} ~~|**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>J<br>K<br>L<br>M<br>N<br>N20 = Product Type Marking Code<br>YM = Date Code Marking<br>Y or Y = Year (ex: G = 2019)<br>M = Month (ex: 9 = September)<br>~~| — |} ~~|**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>J<br>K<br>L<br>M<br>N<br>N20 = Product Type Marking Code<br>YM = Date Code Marking<br>Y or Y = Year (ex: G = 2019)<br>M = Month (ex: 9 = September)<br>~~| — |} ~~|**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>J<br>K<br>L<br>M<br>N<br>N20 = Product Type Marking Code<br>YM = Date Code Marking<br>Y or Y = Year (ex: G = 2019)<br>M = Month (ex: 9 = September)<br>~~| — |} ~~|**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>J<br>K<br>L<br>M<br>N<br>N20 = Product Type Marking Code<br>YM = Date Code Marking<br>Y or Y = Year (ex: G = 2019)<br>M = Month (ex: 9 = September)<br>~~| — |} ~~|**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>J<br>K<br>L<br>M<br>N<br>N20 = Product Type Marking Code<br>YM = Date Code Marking<br>Y or Y = Year (ex: G = 2019)<br>M = Month (ex: 9 = September)<br>~~| — |} ~~|**2027**<br>O<br> ~~—~~||**2028**<br>P|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Month**<br>**Jan**<br>**Feb**<br>**Code**<br>1<br>2<br>~~ee~~|**Mar**<br>3|||||**Apr**<br>4|||||**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>5<br>6<br>7<br>8||**Sep**<br>9||**Oct**<br>O||**Nov**<br>N||**Dec**<br>D|
|BSN20|||||||||||1 of 7||||||December 2019|||
|Document number: DS31898 Rev. 10 - 2||||||||||**www.diodes.com**|||||||© Diodes Incorporated||© Diodes Incorporated|



December 2019 © Diodes Incorporated 

**BSN20** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

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|||||||
|---|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Drain-Source Voltage|VDSS|50|V|
|Gate-Source Voltage|VGSS|20|V|
|Continuous Drain Current|Steady|TA = +25°C|500|
|@ TSP = +25°C (Note 5)|State|TA = +100°C|ID|300|mA|
|Pulsed Drain Current @ TSP = +25°C (Notes 5 & 6)|IDM|1.2|A|

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## **Thermal Characteristics** 

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|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Power Dissipation, @TA = +25°C (Note 5)|PD|600|mW|
|Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)|RJA|200|C/W|
|Power Dissipation, @TSP = +25°C (Note 5)|PD|920|mW|
|Thermal Resistance, @TSP = +25°C (Note 5)|RJSP|136|°C/W|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|

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. 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|TD|Characteristic|Symbol|Min|ID|(I|Typ|(I|Max|Unit|(OU|Test Condition|
|OFF CHARACTERISTICS (Note 7)|
|ee|Drain-Source Breakdown Voltage|BVDSS|50|—|—|V|VGS = 0V, ID = 250µA|
|Zero Gate Voltage Drain Current TJ = +25°C|IDSS|—|—|0.5|µA|VDS = 50V, VGS = 0V|
|oe|Gate-Body Leakage|IGSS|—|—|100|nA|VGS = 20V, VDS = 0V|
|ON CHARACTERISTICS (Note 7)|
|I|Gate Threshold Voltage|VGS(TH)|0.4|I|1.0|TD|(OU|1.5|V|S(O|VDS = VGS, ID = 250µA|
|1.3|1.8|VGS = 10V, ID = 0.22A|
|A|Static Drain-Source On-Resistance|RDS(ON)|—|1.6|2.0||VGS = 4.5V, ID = 0.1A|
|I|Forward Transfer Admittance|I||Yfs||I|40|320|—|mS|VDS = 10V, ID = 0.1A|
|I|Diode Forward Voltage|VSD|—|1.0|ND|(I|1.5|V|(|VGS = 0V, IS = 180mA|
|Source (Diode Forward) Current|IS|—|—|194|mA|TSP = +25°C|
|———|Peak Source (Diode Forward) Current|ISM|—|—|1.2|A|TSP = +25°C|
|DYNAMIC CHARACTERISTICS (Note 8)|
|nN|Input Capacitance|DI|Ciss|I|—|I|21.8|40|pF|
|Output Capacitance|Coss|—|5.6|15|pF|VDS = 10V, VGS = 0V, f = 1.0MHz|
|ee|Reverse Transfer Capacitance|Crss|—|3.3|10|pF|
|Gate Resistance|Rg|—|49|—||VDS =0V, VGS = 0V, f = 1MHz|
|Total Gate CharGate-Source Charge  ge|QQggs|——|800 100|——|ppC C|VIDGS = 250mA   = 10V, VDD = 25V,|
|eer|Gate-Drain Charge|Qgd|—|100|—|pC|
|Turn-On Delay Time|tD(ON)|—|2.93|—|ns|
|———nn|Turn-On Rise Time|I|tR|I|—|I|2.99|—|ns|VRDDL = 150 = 30V, V, RGENGEN = 10V,   = 50,|
|Turn-Off Delay Time|tD(OFF)|—|9.45|—|ns|ID = 0.2A|
|Turn-Off Fall Time|tF|—|8.3|—|ns|
|—<——_—|ee|

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- Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 

   6. Repetitive rating, pulse width limited by junction temperature. 

   7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to production testing. 

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120 120<br>100 100<br>80 80<br>60 60<br>40 40<br>20 20<br>0 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>TS, SOLDER POINT TEMPERATURE  ( 癈°C ) TS, SOLDER POINT TEMPERATURE  ( 癈°C )<br>Fig 1. Normalized Total Power Dissipation  Fig 2. Normalized Continuous Current<br>as a Function of Solder Point Temperature vs. Solder Point Temperature<br>D<br>, POWER DISSIPATION (%)<br>P<br>, NORMALIZED CONTINUOUS CURRENT (%)<br>IDER<br>**----- End of picture text -----**<br>


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1<br>eee R Limitedds(on) eeHNNeerNENETNGENOtens Seer <  STSeti<br>PW = DC \ LAANONIN STNGL<br>PW = 10s<br>0.1 AKAN TL<br>reao PW = 1s ENEEXCENGETAY NFERSE<br>Kot PW = 100ms TRACE Eytt<br>[tt TT PW = 10ms AINE<br>ill MONEE<br>PW = 1ms<br>0.01 SSpeelllAE GO SS PW =  100 AN 祍µs NJ> UeINpree<br>a PW =  10 祍µs PT<br>Fetta A FreBERLE<br>|_ TJ(MAX) = 150150°C癈 [TTT ET<br>T A  = 25 25 癈° C<br>Single Pulse<br>0.001<br>0.1 1 10 100<br>VDS, DRAIN-SOURE VOLTAGE (V)<br>Fig. 3 SOA, Safe Operation Area<br>1,000 Ft<br>eae ee<br>a GO OO OG ON GO<br>fof Th TITTY<br>| TTT PTT TT TT<br>TTT le<br>100 Ieee<br>———— er rrr<br>Eee8 D = 0.5 as es er Oc tt<br>D = 0.3<br>bee Or<br>a a 9 e<br>RK D = 0.1 I KH<br>10 amrBee D = 0.05 [0] 2c4<br>[ttt<br>a a on ce a 8<br>D = 0.02<br>Fett ttt Duty Cycle, D = t1/t2 HH<br>D = Single Pulse<br>1 CAI CCM CEN EM nT<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t1, PULSE DURATION TIME (s)<br>Fig. 4 Transient Thermal Response<br>, DRAIN CURRENT (A)<br>ID<br>, TRANSIENT THERMAL RESISTANCE (°C/W)<br>Z<br>th(j-sp)<br>**----- End of picture text -----**<br>


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**BSN20** 

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0.7 0.8<br>0.6 Tf 0.7 V DS  = 5V Ye<br>0.6<br>0.5 VGS = 10V<br>VGS = 4.5V 0.5<br>0.4 Cfo<br>fe<br>VGS = 4.0V 0.4<br>0.3 VGS = 3.0V<br>0.3<br>0.2 HA et Eee<br>0.2<br>0.1 Foto 0.1 EAA 150°C 25°C<br>0 Ao 0 Ea ee<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.5 1 1.5 2 2.5 3 3.5 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 5 Drain-Source Current vs. Drain-Source Voltage<br>Fig. 6  Transfer Characteristics<br>10 2.5<br>9<br>8 Seeeeee,Pt tf ft tf 2.0 LLL<br>VGS = 10V<br>7 ID = 500mA<br>6 1.5<br>VGS = 4.5V<br>54 es 1.0 ID = 200mA<br>3<br>2 VGS = .5V3 VGS = 4.0V 0.5<br>1 aStee VGS = 4.5V VGS = 10V eTTLL<br>0 PEt 0<br>0 0.1 0.2 0.3 0.4 0.5 tC 0.6 0.7 -50  LI -25 0 25 50 75 L 100 125 150<br>ID, DRAIN-CURRENT (A) TJ, JUNCTION TEMPERATURE  ( 癈°C )<br>Fig. 7 Drain-Source On-Resistance vs. Drain-Current Fig. 8 Drain-Source On-Resistance vs. Junction Temperature<br>2.4 0.5<br>2.0<br>Tie yyy 0.4 TTT TAL<br>1.6<br>0.3<br>1.2 SOS00000 I D = 1.0mA RGRGn/<br>0.2<br>0.8 eeetty =  TT0<br>ID = 250?250µAA<br>150°C<br>0.4 eres) 0.1 COCO 125°C 85°C A<br>25°C<br>-55°C<br>0 Er 0 if<br>-50 PEELE -25 0 25 50 75 EL 100 125 150 0 Fx 0.5 1 1.5 2 2.5 3 3.5 4<br>TJ, JUNCTION TEMPERATURE  ( 癈°C ) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 9 Gate Threshold Voltage vs. Junction Temperature Fig. 10 Transfer Characteristics<br>GS(TH)<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>D<br>, DRAIN-SOURCE CURRENT (A)<br>I<br>, DRAIN-SOURCE CURRENT (A)<br>ID<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**BSN20** 

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0.8<br>0.7<br>0.6 TEEPEae 25°C )<br>0.5<br>CET AE<br>0.4 fom 150°C<br>0.3<br>0.2 Fete][<br>0.1<br>fifty tt tt<br>0<br>0 fp} 0.1 0.2 | 0.3 i} 0.4  ty 0.5 0.6 0.7 0.8<br>ID, DRAIN-CURRENT (A)<br>Fig. 11 Typical Transfer Characteristic<br>1.0<br>0.9<br>| | | | le |<br>0.8<br>| | | |<br>0.7 —<br>0.6<br>| | | | ft ft<br>0.5 150°C<br>0.4 eae 25°C<br>| | pf<br>0.3<br>| | |df |<br>0.2<br>| | | yp |<br>0.1<br>| | | ef A ft<br>0<br>0 | 0.2 |ty) 0.4 0.6 0.8 1.0 tt 1.2 1.4<br>VSD, DIODE FORWARD VOLTAGE (V)<br>Fig. 13 Source Current vs. Diode Forward Voltage<br>, SOURCE CURRENT (A)<br>IS<br>, FORWARD TRANSCONDUCTANCE (s)<br>fs<br>g<br>**----- End of picture text -----**<br>


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40<br>35<br>30 EEE<br>25<br>Kf ttt tt<br>20 “pet<br>Ciss<br>15<br>10 «EEE|<br>5 Coss<br>Qe<br>0 Crss<br>0 TE 5 10 15 20 25 30 35 40<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 12 Capacitance vs. Drain-Source Voltage<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


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**BSN20** —— 

## DsCDES 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT23<br>**----- End of picture text -----**<br>


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All 7°<br>H<br>GAUGE PLANE SOT23<br>0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 K<br>B  1.20  1.40  1.30<br>C  2.30  2.50  2.40<br>a D  0.89  1.03  0.915<br>A M F  0.45  0.60  0.535<br>ne L L1 G  1.78 2.05 1.83<br>H  2.80 3.00 2.90<br>J  0.013 0.10 0.05<br>K  0.890  1.00  0.975<br>C B K1  0.903  1.10  1.025<br>L  0.45  0.61  0.55<br>L1  0.25  0.55  0.40<br>== oe<br>M  0.085 0.150  0.110<br>|} D —— a  0°  8°  --<br>F G SEES All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23** 

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Y<br>Y1 aa C<br>fo<br>PIL X X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



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BSN20 Document number: DS31898 Rev. 10 - 2 

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**BSN20** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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BSN20 Document number: DS31898 Rev. 10 - 2 

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