# Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 1.4 A, 1.4 A, 0.119 ohm

![Product image](https://novapart.co/image/farnell:2617475RL/)

**URL**: https://novapart.co/products/BSL316CH6327XTSA1/dual-mosfet-complementary-n-and-p-channel-30-v-14
**SKU**: BSL316CH6327XTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.1510
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N and P Complement; Continuous Drain Current Id:1.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.119ohm; Rds(on) Test Voltage Vgs:10V; Threshold Vo

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | Complementary N and P Channel |
| Product Range | OptiMOS 2 Series |
| Qualification | AEC-Q101 |
| Transistor Case Style | TSOP |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 500mW |
| Power Dissipation P Channel | 500mW |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 30V |
| Continuous Drain Current Id N Channel | 1.4A |
| Continuous Drain Current Id P Channel | 1.4A |
| Drain Source On State Resistance N Channel | 0.119ohm |
| Drain Source On State Resistance P Channel | 0.119ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2617475RL/)

**BSL316C** 

## **OptiMOS™ 2 + OptiMOS™-P 2 Small Signal Transistor** 

## **Product Summary** 

## **Features** 

|**2 + OptiMOS™-P 2 Small Signal Transistor**|**2 + OptiMOS™-P 2 Small Signal Transistor**|**2 + OptiMOS™-P 2 Small Signal Transistor**|**2 + OptiMOS™-P 2 Small Signal Transistor**|**2 + OptiMOS™-P 2 Small Signal Transistor**|
|---|---|---|---|---|
|**Product Summary**|||||
||||||
|||**P**|**N**||
||||||
|_V_DS||-30|30|V|
||||||
|_R_DS(on),max|_V_GS=±10 V|150|160|mW|
||||||
||_V_GS=±4.5 V|270|280||
||||||
|_I_D||-1.5|1.4|A|



|**Features**|**Features**|**Features**|**Features**||||||||||||**P**|||**N**|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|·Complementary P + N channel<br>·Enhancement mode||||_V_DS|||||||||||-30|||30|||V|V|
|·Logic level (4.5V rated)<br>·Avalanche rated||||_R_DS(on),max||||_V_GS=±10 V<br>_V_GS=±4.5 V|||||||150<br>270|||160<br>280|||m|m|
|||||_I_D|||||||||||-1.5|||1.4|||A|A|
|·Qualified according to AEC Q101|Qualified according to AEC Q101||||||||||||||||||||||
|·100% lead-free; RoHS compliant|||||||||||PG-TSOP6|||||PG-TSOP6|||||||
||||||||||||||||||||||||
|·Halogen free according to IEC61249-2-21|||||||||||||||||||||||
||||||||||||||||6||5||||||
|||||||||||||||||||4|||||
|||||||||||||1|||1||||||||
|KegS/@®Halogen-Free||||5||||.|||||||2<br>3||||||||
||||||||||||||||||||||||
|**Type**<br>**Package**|||**Tape and Reel Information**||||**Marking**|||**Lead Free**||||||||**Packing**|||||
||||||||||||||||||||||||
|BSL316C<br>PG-TSOP-6|||H6327: 3000 pcs / reel|H6327: 3000 pcs / reel|||sPJ|||Yes|||Yes|||||Non dry||||Non dry|



**Maximum ratings,** at _T_ j=25 °C, unless otherwise specified[1)] 

||||~~eee~~|~~eee~~||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **<br>~~2~~<br>~~EES~~|**Conditions**<br>~~EES~~|**Unit**<br>**Value**<br>~~PO~~<br>~~eee~~||**Unit**|
||||**P**<br>~~PO~~<br>~~eee~~<br>~~EES~~|**N**<br>~~PO~~<br>~~eee~~<br>~~EES~~||
|Continuous drain current|_I_D<br>~~EES~~<br>~~re~~|_T_A=25 °C<br>~~EES~~|-1.5<br>~~eee~~<br>~~EES~~|1.4<br>A<br>~~eee~~<br>~~EES~~|A|
|||_T_A=70 °C<br>~~EES~~<br>~~ee~~<br>~~ee~~|-1.2<br>~~EES~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.1<br>~~EES~~<br>~~ee~~<br>~~ee~~||
|Pulsed drain current|_I_D,pulse<br>~~EES~~<br>~~re~~|_T_A=25 °C<br>~~EES~~<br>~~ee~~|-6.0<br>~~EES~~<br>~~ee~~<br>~~ee~~|5.6<br>~~EES~~<br>~~ee~~||
|Avalanche energy, single pulse|_E_AS<br>~~re~~|P:_I_D=-1.5 A,<br>N:_I_D=1.4 A,<br>_R_GS=25W<br>~~ee~~|11<br>~~ee~~<br>~~ee ~~|3.7<br>mJ<br> ~~ee~~|mJ|
|Gate source voltage|_V_GS<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|V<br>±20<br>~~ee~~<br>~~ee~~||V|
|Power dissipation1)|_P_tot<br>~~ee~~|_T_A=25 °C<br>~~ee~~|W<br>0.5<br>~~ee~~||W|
|Operating and storage temperature|_T_j,_T_stg<br>~~ee~~<br>~~aee~~|~~ee~~<br>~~ee~~|°C<br>-55 ... 150<br>~~ee~~<br>~~ee~~||°C|
|ESD class|~~ee~~|JESD22-A114-HBM<br>~~ee~~|0 (<250V)<br>~~ee~~|||
|Soldering temperature|_T_solder<br>~~ee~~<br>~~a~~|~~ee~~<br>~~a~~|°C<br>260<br>~~ee~~<br>~~a~~||°C|
|IEC climatic category; DIN IEC 68-1|~~a~~|~~a~~|55/150/56<br>~~a~~|||



1) Remark: only one of both transistors active 

Rev. 2.3 

page 1 

2014-07-21 

|Drain-source breakdown voltage|P<br>~~[|~~|_V_(BR)DSS <br>~~[|~~|_V_GS=0 V,_I_D=-250 µA<br>~~[|~~<br>~~J~~<br>~~fT~~|-<br>~~[|~~<br>~~J~~<br>~~J~~<br>~~fT~~<br>~~tT~~|-<br>~~[|~~<br>~~Jff~~<br>~~tT~~|-30<br>~~[|~~<br>~~ff~~|V<br>~~ff~~|
|---|---|---|---|---|---|---|---|
||N<br>~~[|~~|~~[|~~|_V_GS=0 V,_I_D=250 µA<br>~~J~~<br>~~[|~~<br>~~fT~~|30<br>~~J~~<br>~~J~~<br>~~[|~~<br>~~fT~~<br>~~tT~~|-<br>~~J ff~~<br>~~[|~~<br>~~tT~~|-<br>~~ff~~<br>~~[|~~||
|Gate threshold voltage|P<br>~~ee~~|_V_GS(th)<br>~~ee~~|_V_DS=_V_GS,_I_D=-11 µA<br>~~fT~~<br>~~ee~~|-2<br>~~fT~~<br>~~tT~~<br>~~ee~~|-1.5<br>~~tT~~<br>~~ee~~|-1<br>~~ee~~||
||N<br>~~ee~~||_V_DS=_V_GS,_I_D=3.7 µA<br>~~ee~~|1.2<br>~~ee~~|1.6<br>~~ee~~|2<br>~~ee~~||
|Zero gate voltage drain current|P<br>~~| ~~|_I_DSS<br> <br>~~ee~~<br> <br>~~Poy~~|_V_DS=-30 V,_V_GS=0 V,<br>_T_j=25 °C<br> ~~Ef]~~|-<br>~~Ef]~~<br>~~|~~|-<br>~~Ef]~~<br>~~|fe~~|-1<br>~~Ef]~~<br>~~fe~~|µA|
||N<br>~~ee~~||_V_DS=30 V,_V_GS=0 V,<br>_T_j=25 °C<br>~~ee~~|-<br>~~|~~<br>~~ee~~|-<br>~~| fe~~<br>~~ee~~|1<br>~~fe~~<br>~~ee~~||
||P<br>|||_V_DS=-30 V,_V_GS=0 V,<br>_T_j=150 °C<br> ~~pt~~|-<br>~~pt~~<br>~~ff~~|-<br>~~pt~~<br>~~ff~~|-100<br>~~pt~~<br>~~ff~~||
||N<br>~~Poy~~||_V_DS=30 V,_V_GS=0 V,<br>_T_j=150 °C<br>~~Poy~~|-<br>~~ff~~<br>~~Poy~~|-<br>~~ff~~<br>~~Poy~~|100<br>~~ff~~<br>~~Poy~~||
|Gate-source leakage current|P<br>~~oe~~|_I_GSS<br>~~oe~~|_V_GS=±20 V,_V_DS=0 V<br>~~ee~~|-<br>~~ee~~|-|±100|nA|
||N<br>~~oe~~|||||||
|Drain-source on-state<br>resistance|P<br>~~oe~~<br>~~re~~<br>~~f~~|_R_DS(on)<br>~~oe ~~<br>~~re~~<br> <br> <br>|_V_GS=-4.5 V,_I_D=-<br>1.1 A<br> ~~ee ~~<br>~~re~~<br>~~EEE~~|-<br> ~~ee~~<br>~~re~~<br>~~EEE~~|177<br>~~re~~<br>~~EEE~~|270<br>~~re~~<br>~~EEE~~|mW|
||N<br>~~f~~||_V_GS=4.5 V,_I_D=-1.1 A<br>~~EEE~~|-<br>~~EEE~~|191<br>~~EEE~~|280<br>~~EEE~~||
||P<br>~~f~~<br>~~i ~~||_V_GS=-10 V,_I_D=-1.5 A<br>~~EEE~~<br> ~~ee~~|-<br>~~EEE~~<br>~~ee~~<br>~~ft~~|113<br>~~EEE~~<br>~~ee~~<br>~~ft~~|150<br>~~EEE~~<br>~~ee~~||
||N<br>~~f ~~<br>~~| ~~||_V_GS=10 V,_I_D=1.4 A<br> ~~EEE~~<br> ~~[ft~~|-<br>~~EEE~~<br>~~[ft~~<br>~~ft~~|119<br>~~EEE~~<br>~~[ft~~<br>~~ft~~|160<br>~~EEE~~<br>~~[ft~~||
|Transconductance|P<br>~~fh}~~<br>~~|~~|_g_fs<br>~~fh}~~<br>~~|~~||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=-1.18 A<br>~~fh}~~<br>~~|~~<br>~~ft~~|-<br>~~ft~~<br>~~fh}~~<br>~~ft~~<br>~~|~~|2.7<br>~~ft~~<br>~~fe~~|-<br>~~fe~~|S|
||N<br>~~fh}~~<br>~~|~~|||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=1.1 A<br>~~fh}~~<br>~~|~~<br>~~ft~~|-<br>~~fh}~~<br>~~ft~~<br>~~|~~|2.3<br>~~fe~~|-<br>~~fe~~||



> 2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70 μ m thick and 20mm long; they are present on both sides of the PCB 

Rev. 2.3 

page 2 

2014-07-21 

|Cinfineon||||||
|---|---|---|---|---|---|
|Cinfineon||||**BSL316C**||
|||||||
|**Parameter**||**Symbol **|**Conditions**|**Values**|**Unit**|
|||||**min.**<br>**typ.**<br>**max.**||
|**Dynamic characteristics**||||||
|Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|P<br>_C_iss<br>N<br>P<br>_C_oss<br>N<br>P<br>Crss<br>N<br>P<br>_t_d(on)<br>N<br>P<br>_t_r<br>N<br>P<br>_t_d(off)<br>N<br>P<br>_t_f<br>N<br>~~a~~<br>~~-~~<br>~~fp~~<br>~~4~~<br>~~a~~<br>~~yf~~<br>~~a~~<br>~~yf~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~||_V_GS=0 V,<br>P:_V_DS=-15 V,<br>N:_V_DS= 15 V,<br>_f_=1 MHz<br>P:_V_DD=-15 V,<br>_V_GS=-10 V,_R_G=6W,<br>_I_D=-1.5 A<br>N:_V_DD=15 V,<br>_V_GS=10 V,_R_G=6W,<br>_I_D=1.4 A|-<br>212<br>282<br>-<br>71<br>94<br>-<br>69<br>91<br>-<br>26<br>35<br>-<br>56<br>84<br>-<br>5<br>7<br>-<br>5.0<br>-<br>-<br>3.4<br>-<br>-<br>6.5<br>-<br>-<br>2.3<br>-<br>-<br>14.3<br>-<br>-<br>5.8<br>-<br>-<br>7.5<br>-<br>-<br>1.0<br>-<br>=-1.5 A<br>=15 V,<br>~~[| fo~~<br>~~T=~~<br>~~[| |~~<br>~~**[**| ft~~<br>~~|~~<br>~~|~~<br>~~**[**| ft~~<br>~~|~~<br>~~**|**~~<br>~~**[**|~~<br>~~|~~<br>~~|~~<br>~~[|~~<br>~~|~~<br>~~[|~~<br>~~|~~<br>~~[|~~<br>~~ft~~<br>~~[|~~<br>~~|~~|pF<br>ns|
|Gate Charge Characteristics||||||
|Gate to source charge|P|_Q_gs||-<br>-0.6<br>-|nC|
|Gate to drain charge||_Q_gd|_V_DD=-15 V,<br>_I_D=-1.5 A,|-<br>-1.2<br>-||
|Switching charge||_Q_g|_V_GS=0 to -5 V|-<br>-2.4<br>-||
|Gate plateau voltage||_V_plateau||-<br>-2.9<br>-||
|Gate to source charge|N|_Q_gs||-<br>0.3<br>-||
|Gate to drain charge||_Q_gd|_V_DD=15 V,<br>_I_D=1.4 A,|-<br>0.2<br>-||
|Switching charge||_Q_g|_V_GS=0 to 5 V|0.6<br>-||
|Gate plateau voltage||_V_plateau||-<br>3.4<br>-||



Rev. 2.3 

page 3 

2014-07-21 

**BSL316C Parameter Symbol Conditions Values Unit min. typ. max. Reverse Diode** Diode continuous forward current P _I_ S - - -0.5 A N - - 0.5 ~~oo~~ _T_ C=25 °C ~~|~~ Diode pulse current P _I_ S,pulse - - -6.0 N - - 5.6 Diode forward voltage P _V_ SD _V_ GS=0 V, _I_ F=-1.5 A, - -0.8 -1.1 V _T_ =25 °C j ~~-~~ N ~~|_FEE~~ _V_ GS=0 V, _I_ F=1.4 A, - 0.86 1.1 _T_ =25 °C j ~~oan~~ Reverse recovery time P _t_ rr - 8.2 - ns ~~- Ee|| |~~ N _V_ R=±15 V, _I_ F= _I_ S, - 9.1 - Reverse recovery charge P _Q_ rr d _i_ F/d _t_ =100 A/µs - 2.1 - nC ~~L =o~~ N - 2.6 - ~~iC ===po|~~ 

Rev. 2.3 

page 4 

2014-07-21 

**BSL316C** 

## **1 Power dissipation (P)** 

_P_ tot=f( _T_ A) 

## **2 Power dissipation (N)** 

_P_ tot=f( _T_ A) 

**==> picture [466 x 268] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.6 0.6<br>0.5 0.5<br>0.4 0.4<br>0.3 0.3<br>0.2 0.2<br>0.1 0.1<br>0 0<br>0 40 80 120 160 0 40 80 120 160<br>T A [°C]  T A [°C]<br> [W]   [W]<br>tot tot<br>P P<br>**----- End of picture text -----**<br>


## **3 Drain current (P)** 

_I_ D=f( _T_ A) parameter: _V_ GS≤-10 V 

## **4 Drain current (N)** 

_I_ D=f( _T_ A) parameter: _V_ GS≥10 V 

**==> picture [466 x 268] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.6 1.6<br>1.4 1.4<br>1.2 1.2<br>1 1<br>0.8 0.8<br>0.6 0.6<br>0.4 0.4<br>0.2 0.2<br>0 0<br>0 40 80 120 160 0 40 80 120 160<br>T A [°C]  T A [°C]<br> [A]  -I D  [A]  I D<br>**----- End of picture text -----**<br>


Rev. 2.3 

2014-07-21 

page 5 

**BSL316C** 

## **5 Safe operating area (P)** 

_I_ D=f( _V_ DS); _T_ A=25 °C; _D_ =0 parameter: _t_ p 

## **6 Safe operating area (N)** 

_I_ D=f( _V_ DS); _T_ A=25 °C; _D_ =0 parameter: _t_ p 

**==> picture [467 x 611] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [1 ] 10 [1 ]<br>1 µs  1 µs<br>10 µs  10 µs<br>100 µs  100 µs<br>1 ms<br>10 [0 ] 10 [0 ]<br>1 ms<br>10 ms  10 ms<br>DC  DC<br>10 [-1 ] 10 [-1 ]<br>10 [-2 ] 10 [-2 ]<br>10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ]<br>-V DS [V]  V DS [V]<br>7 Max. transient thermal impedance (P) 8 Max. transient thermal impedance (N)<br> thJA=f(=f( t  p)) Z  thJA=f( t  p)<br>parameter:  D  = t  p// T parameter:  D  = t  p/ T<br>10 [3 ] 10 [3 ]<br>0.5  0.5<br>10 [2 ] 10 [2 ]<br>0.2  0.2<br>0.1  0.1<br>0.05  0.05<br>10 [1 ] 0.02  10 [1 ]<br>0.02<br>0.01<br>0.01<br>single pulse  single pulse<br>10 [0 ] 10 [0 ]<br>10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ]<br>t p [s]  t p [s]<br> [A]  -I D  [A]  I D<br> [K/W]   [K/W]<br>thJA thJA<br>Z Z<br>**----- End of picture text -----**<br>


## **7 Max. transient thermal impedance (P)** 

_Z_ thJA=f(=f( _t_ p)) 

parameter: _D_ = _t_ p// _T_ 

Rev. 2.3 

page 6 

2014-07-21 

**BSL316C** 

## **9 Typ. output characteristics (P)** 

_I_ D=f( _V_ DS); _T_ j=25 °C 

parameter: _V_ GS 

**==> picture [223 x 609] intentionally omitted <==**

**----- Start of picture text -----**<br>
6<br>-10 V  -5 V  -4.5 V  -4 V<br>5<br>4<br>-3.5 V<br>3<br>2<br>-3 V<br>|<br>1<br>-2.5 V<br>0<br>0 1 2 3<br>-V DS [V]<br>11 Typ. drain-source on resistance (P)<br> DS(on)=f(=f( I  D); );  T  j=25 °C=25 °C<br>parameter:  V  GS<br>400<br>350<br>-3 V<br>-3.5 V<br>300<br>250<br>-4 V<br>200<br>-4.5 V<br>-5 V<br>150<br>-10 V<br>100<br>50<br>0<br>0 1 2 3 4 5<br>-I D [A]<br> [A]<br>D<br>-I<br>]<br>W<br> [m<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **11 Typ. drain-source on resistance (P)** 

_R_ DS(on)=f(=f( _I_ D); ); _T_ j=25 °C=25 °C 

parameter: _V_ GS 

## **10 Typ. output characteristics (N)** 

_I_ D=f( _V_ DS); _T_ j=25 °C 

parameter: _V_ GS 

**==> picture [223 x 266] intentionally omitted <==**

**----- Start of picture text -----**<br>
6<br>10 V<br>5 V<br>4.5 V<br>5<br>4<br>4 V<br>3<br>2<br>3.5 V<br>1<br>3 V<br>0 2.5 V<br>0 1 2 3<br>V DS [V]<br> [A]<br>I D<br>**----- End of picture text -----**<br>


**12 Typ. drain-source on resistance (N)** 

_R_ DS(on)=f( _I_ D); _T_ j=25 °C parameter: _V_ GS 

**==> picture [221 x 266] intentionally omitted <==**

**----- Start of picture text -----**<br>
400<br>350 3.5 V<br>300<br>4 V<br>250<br>4.5 V<br>200<br>5 V<br>150<br>10 V<br>100<br>50<br>0<br>0 1 2 3 4 5<br>I D [A]<br>]<br>W<br> [m<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


Rev. 2.3 

2014-07-21 

page 7 

**BSL316C** 

## **13 Typ. transfer characteristics (P)** 

_I_ D=f( _V_ GS); | _V_ DS |>2 | ID| RDS(on)max 

parameter: _T_ j 

**==> picture [223 x 266] intentionally omitted <==**

**----- Start of picture text -----**<br>
6<br>5<br>25 °C<br>4<br>3 |<br>150 °C<br>/<br>2<br>1 |<br>Vin<br>0<br>0 1 2 3 4 5<br>-V GS [V]<br> [A]<br>D<br>-I<br>**----- End of picture text -----**<br>


## **14 Typ. transfer characteristics (N)** 

_I_ D=f( _V_ GS); _|V DS  |>2 | I D | R DS(on)max_ parameter: _T_ j 

**==> picture [223 x 268] intentionally omitted <==**

**----- Start of picture text -----**<br>
6<br>5<br>25 °C<br>150 °C<br>4<br>3<br>2<br>1<br>0<br>0 1 2 3 4 5<br>V GS [V]<br> [A]<br>I D<br>**----- End of picture text -----**<br>


## **15 Drain-source on-state resistance (P)** 

_R_ DS(on)=f( _T_ j); _I_ D=-1.5 A; _V_ GS=-10 V 

## **16 Drain-source on-state resistance (N)** 

_R_ DS(on)=f( _T_ j); _I_ D=1.4 A; _V_ GS=10 V 

**==> picture [465 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
300 300<br>250 250<br>200 200<br>98%<br>98%<br>150 150<br>typ<br>100 typ  100<br>50 50<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C]  T j [°C]<br>]  ]<br>W W<br>[m  [m<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


Rev. 2.3 

page 8 

2014-07-21 

**BSL316C** 

## **17 Typ. gate threshold voltage (P)** 

_V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=-11 µA 

## **18 Typ. gate threshold voltage (N)** 

_V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=3.7 µA 

**==> picture [471 x 609] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.8 2.8<br>2.4 2.4<br>2 min  2 max<br>1.6 1.6<br>typ<br>typ<br>1.2 1.2<br>min<br>0.8 max  0.8<br>0.4 0.4<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C]  T j [°C]<br>19 Typ. capacitances (P) 20 Typ. capacitances (N)<br>C  =f( V  DS);  V  GS=0 V;  f  =1 MHz C  =f( V  DS);  V  GS=0 V;  f  =1 MHz<br>10 [3 ] 10 [2 ]<br>Ciss<br>Coss<br>Too<br>Ciss<br>10 [2 ] 10 [1 ]<br>Coss<br>Crss<br>Crss<br>a i e te<br>10 [1 ] 10 [0 ]<br>0 ro 10 a 20 d 30 0 f 10 e 20 30<br>-V DS [V]  V DS [V]<br> [V]   [V]<br>GS(th) GS(th)<br>-V V<br> [pF]   [pF]<br>C C<br>**----- End of picture text -----**<br>


Rev. 2.3 

page 9 

2014-07-21 

**BSL316C** 

## **21 Forward characteristics of reverse diode (P) 22 Forward characteristics of reverse diode (N)** 

_I_ F=f( _V_ SD) 

parameter: _T_ j 

_I_ F=f( _V_ SD) 

parameter: _T_ j 

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**----- Start of picture text -----**<br>
10 [1 ] 10 [1 ]<br>10 [0 ] 10 [0 ]<br>150 °C  25 °C  150 °C<br>25 °C<br>10 [-1 ] 10 [-1 ]<br>25 °C, 98%<br>98%, 150°C<br>150 °C, 98%  98%, 25 °C<br>10 [-2 ] 10 [-2 ]<br>0 0.5 1 1.5 2 0 0.5 1 1.5 2<br>-V SD [V]  V SD [V]<br>23 Avalanche characteristics (P) 24 Avalanche characteristics (N)<br>I  AS=f( t  AV);  R  GS=25 W I  AS=f( t  AV);  R  GS=25 W<br>parameter:  T  j(start) parameter:  T  j(start)<br>10 10<br>1 25 °C  1 25 °C<br>100 °C  125 °C  100 °C<br>125 °C<br>0.1 NR 0.1<br>1 10 100 1000 1 10 100 1000<br>t AV [µs]  t AV [µs]<br>Rev. 2.3 page 10 2014-07-21<br> [A]  -I F  [A]  I F<br> [A]   [A]<br>-I AV I AV<br>**----- End of picture text -----**<br>


Rev. 2.3 

2014-07-21 

**BSL316C** 

## **25 Typ. gate charge (P)** 

_V_ GS=f( _Q_ gate); _I_ D=-1.5 A pulsed parameter: _V_ DD 

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10<br>8<br>-6 V  -15 V  -24 V<br>6<br>4<br>2<br>0 fccty<br>0 1 2 3 4 5<br>-Q gate [nC]<br> [V]<br>GS<br>-V<br>**----- End of picture text -----**<br>


## **27 Drain-source breakdown voltage (P)** 

_V_ BR(DSS)=f( _T_ j); _I_ D=-250 µA 

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36<br>34<br>32<br>30<br>28<br>26<br>24<br>-60 -20 20 60 100 140 180<br>T j [°C]<br> [V]<br>BR(DSS)<br>-V<br>**----- End of picture text -----**<br>


## **26 Typ. gate charge (N)** 

_V_ GS=f( _Q_ gate); _I_ D=1.4 A pulsed parameter: _V_ DD 

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10<br>8<br>6 V  15 V  24 V<br>6<br>4<br>2<br>Yee<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2<br>Q gate [nC]<br> [V]<br>GS<br>V<br>**----- End of picture text -----**<br>


## **28 Drain-source breakdown voltage (N)** 

_V_ BR(DSS)=f( _T_ j); _I_ D=250 µA 

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36<br>34<br>32<br>30<br>28<br>26<br>24<br>-60 -20 20 60 100 140 180<br>T j [°C]<br> [V]<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Rev. 2.3 

page 11 

2014-07-21 

**BSL316** 

## **Package Outline:** 

## **TSOP6** 

**Footprint: Packaging:** 

Dimensions in mm 

**Note: For symmetric types there is no defined Pin 1 orientation in the reel.** 

Rev. 2.3 

page 12 

2014-07-21 

**BSL316C** 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Rev. 2.3 

page 13 

2014-07-21 



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- [Supplier page](https://es.farnell.com/infineon/bsl316ch6327xtsa1/mosfet-aec-q101-complement-n-p/dp/2617475RL)
---

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