# Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.3 A, 2.3 A, 0.044 ohm

![Product image](https://novapart.co/image/farnell:4319162/)

**URL**: https://novapart.co/products/BSL308CH6327XTSA1/dual-mosfet-complementary-n-and-p-channel-30-v-23
**SKU**: BSL308CH6327XTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.1470
**Stock**: 10+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | Complementary N and P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Transistor Case Style | TSOP |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 500mW |
| Power Dissipation P Channel | 500mW |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 30V |
| Continuous Drain Current Id N Channel | 2.3A |
| Continuous Drain Current Id P Channel | 2.3A |
| Drain Source On State Resistance N Channel | 0.044ohm |
| Drain Source On State Resistance P Channel | 0.044ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4319162/)

**BSL308C** 

## **OptiMOS™ P3 + Optimos™ 2 Small Signal Transistor** 

|**OptiMOS™ P3 + Optimos™ 2 Small Signal Transistor**|**OptiMOS™ P3 + Optimos™ 2 Small Signal Transistor**|**OptiMOS™ P3 + Optimos™ 2 Small Signal Transistor**|**OptiMOS™ P3 + Optimos™ 2 Small Signal Transistor**|**OptiMOS™ P3 + Optimos™ 2 Small Signal Transistor**|
|---|---|---|---|---|
|**Product Summary**|||||
||||||
|||**P**|**N**||
||||||
|_V_DS||-30|30|V|
||_V_GS=±10 V||||
|_R_DS(on),max||80|57|mW|
||_V_GS=±4.5 V||||
|||130|93||
||||||
|_I_D||-2.0|2.3|A|



## **Features** 

- Complementary P + N channel 

- · Enhancement mode · Logic level (4.5V rated) 

- · Avalanche rated 

- Qualified according to AEC Q101 

- 100% Lead-free; RoHS compliant 

**==> picture [439 x 96] intentionally omitted <==**

**----- Start of picture text -----**<br>
PG-TSOP-6<br>·<br> Halogen free according to IEC61249-2-21<br>6<br>5<br>4<br>3  1<br>2<br>3<br>**----- End of picture text -----**<br>


|Kegs*|*S/&|**3**<br>&Halogen-Free<br>:|2|2<br>3||
|---|---|---|---|---|---|
|||**Tape and Reel Information**||||
|**Type**|**Package**||**Marking**|**Lead Free**|**Packing**|
|||H6327: 3000 pcs / reel||||
|BSL308C|PG-TSOP6||sPS|Yes|Non dry|



|**Parameter**|**Symbol **<br>~~_ |~~<br>~~EES~~|**Conditions**<br>~~|-{—~~<br>~~EES~~|**Value**<br>~~Po~~<br>~~-{—~~|**Value**<br>~~Po~~<br>~~-{—~~|**Unit**<br>~~Po~~<br>~~-{—~~|
|---|---|---|---|---|---|
||||**P**<br>~~Po~~<br>~~-{—~~<br>~~EES~~|**N**<br>~~Po~~<br>~~-{—~~<br>~~EES~~||
|Continuous drain current|_I_D<br>~~|~~<br>~~EES~~|_T_A=25 °C<br>~~|~~<br>~~EES~~|-2.0<br><br>~~EES~~|2.3<br><br>~~EES~~|A<br><br>~~ee~~<br>~~re~~|
|||_T_A=70 °C<br>~~EES~~<br>~~ee~~|-1.6<br>~~EES~~<br>~~ee~~<br>~~ee~~|1.8<br>~~EES~~<br>~~ee~~||
|Pulsed drain current|_I_D,pulse<br>~~EES~~<br>~~re~~|_T_A=25 °C<br>~~EES~~<br>~~re~~|-8.0<br>~~EES~~<br>~~re~~<br>~~ee~~|9<br>~~EES~~<br>~~re~~||
|Avalanche energy, single pulse|_E_AS|P:_I_D=-2.0 A,<br>N:_I_D=2.3 A,<br>_R_GS=25W|10.7<br>~~ee~~|10.8|mJ|
|Gate source voltage|_V_GS<br>~~ee~~<br>~~es~~|~~ee~~<br>~~es~~|±20<br>~~ee~~<br>~~ee~~||V<br>~~ee~~<br>~~ee~~|
|Power dissipation2)|_P_tot<br>~~es~~|_T_A=25 °C<br>~~es~~|0.5<br>~~ee~~||W<br>~~ee~~|
|Operating and storage temperature|_T_j,_T_stg<br>~~es~~<br>~~ee~~<br>~~es~~|~~es~~<br>~~ee~~<br>~~es~~|-55 ... 150<br>~~ee~~<br>~~ee~~<br>~~ee~~||°C<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|ESD class|~~es~~|JESD22-A114-HBM<br>~~es~~|class 0 (<250V)<br>~~ee~~||~~ee~~|
|Soldering temperature|_T_solder<br>~~es~~<br>~~ee~~|~~es~~<br>~~ee~~|260<br>~~ee~~<br>~~ee~~||°C<br>~~ee~~<br>~~ee~~|
|IEC climatic category; DIN IEC 68-1|~~a ~~|~~a~~|55/150/56<br>~~ee~~||~~ee~~|



1) Remark: only one of both transistors active 

Rev.2.1 

page 1 

2013-11-07 

|**Static characteristics**||||||||
|---|---|---|---|---|---|---|---|
|Drain-source breakdown voltage|P<br>~~ee~~|_V_(BR)DSS <br>~~ee~~|_V_GS=0 V,_I_D=-250 µA<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|-30<br>~~ee~~|V<br>~~fe~~|
||N<br>~~ee~~|~~ee~~|_V_GS=0 V,_I_D=250 µA<br>~~ee~~|30<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~||
|Gate threshold voltage|P<br>~~{|~~|_V_GS(th)<br>~~{||__|~~<br>|_V_DS=_V_GS,_I_D=-11µA<br>~~|__|~~|-2<br>~~|__|~~|-1.5<br>~~}—~~|-1<br>~~}—~~||
||N<br>~~{|~~<br>~~ee ~~||_V_DS=_V_GS,_I_D=11 µA<br>~~|__|~~<br> ~~ee~~|1.2<br>~~|__|~~<br>~~ee~~<br>~~|~~|1.6<br>~~}—~~<br>~~ee~~<br>~~|fe~~|2<br>~~}—~~<br>~~ee~~<br>~~fe~~||
|Zero gate voltage drain current|P<br>~~{|~~<br>~~| ~~|_I_DSS<br>~~{| |__|~~<br> <br>~~ee~~<br>~~ee~~|_V_DS=-30 V,_V_GS=0 V,<br>_T_j=25 °C<br>~~|__|~~<br> ~~if]~~|-<br>~~|__| ~~<br>~~if]~~<br>~~|~~|-<br> ~~}—~~<br>~~if]~~<br>~~|fe~~|-1<br>~~}—~~<br>~~if]~~<br>~~fe~~|µA<br>~~fe~~|
||N<br>~~ee~~||_V_DS=30 V,_V_GS=0 V,<br>_T_j=25 °C<br>~~ee~~|-<br>~~|~~<br>~~ee~~|-<br>~~| fe~~<br>~~ee~~|1<br>~~fe~~<br>~~ee~~||
||P<br>~~ee~~<br>~~a~~||_V_DS=-30 V,_V_GS=0 V,<br>_T_j=150 °C<br>~~ee ~~<br>~~ee~~|-<br> ~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|-100<br>~~ee~~||
||N<br>~~a~~||_V_DS=30 V,_V_GS=0 V,<br>_T_j=150 °C<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|100<br>~~ee~~||
|Gate-source leakage current|P<br>~~a~~<br>~~a~~|_I_GSS<br>~~fT~~|_V_GS=±20 V,_V_DS=0 V<br>~~ee~~<br>~~fT~~|-<br>~~ee ~~<br>~~fT~~|-<br> ~~ee~~<br>~~fT~~|±100<br>~~ee~~<br>~~fT~~|nA|
||N<br>~~a~~|||||||
|Drain-source on-state<br>resistance|P<br>~~PoE~~|_R_DS(on)<br>~~PoE~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|_V_GS=-4.5 V,<br>_I_D=-1.7 A<br>~~PoE~~|-<br>~~PoE~~<br>~~ee~~|88<br>~~PoE~~<br>~~ee~~|130<br>~~PoE~~|mW|
||N<br>~~ee~~||_V_GS=4.5 V,_I_D=1.85 A<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|67<br>~~ee~~<br>~~ee~~|93<br>~~ee~~||
||P<br>~~ee~~||_V_GS=-10 V,<br>_I_D=-2.0 A<br>~~ee~~|-<br>~~ee ~~<br>~~ee~~<br>~~ee~~|62<br> ~~ee~~<br>~~ee~~|80<br>~~ee~~||
||N<br>~~ee~~||_V_GS=10 V,_I_D=2.3 A<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|44<br>~~ee~~|57<br>~~ee~~||
|Transconductance|P<br>~~fp~~<br>~~ie~~|_g_fs<br>~~fp~~||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=-1.6 A<br>~~fp~~<br>~~ee~~|-<br>~~|~~<br>~~ee~~|4.6<br>~~ee~~|-<br>~~ee~~|S|
||N<br>~~fp~~<br>~~ie~~|||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=1.8 A<br>~~fp~~<br>~~ee~~|-<br>~~|~~<br>~~ee~~|5<br>~~ee~~|-<br>~~ee~~||



> 2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70 μ m thick and 20mm long; they are present on both sides of the PCB 

Rev.2.1 

page 2 

2013-11-07 

|cinfineon||||||
|---|---|---|---|---|---|
|cinfineon||||**BSL308C**||
|||||||
|**Parameter**||**Symbol **|**Conditions**|**Values**|**Unit**|
|||||**min.**<br>**typ.**<br>**max.**||
|**Dynamic characteristics**||||||
|Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|P<br>_C_iss<br>N<br>P<br>_C_oss<br>N<br>P<br>Crss<br>N<br>P<br>_t_d(on)<br>N<br>P<br>_t_r<br>N<br>P<br>_t_d(off)<br>N<br>P<br>_t_f<br>N<br>~~a~~<br>~~-~~<br>~~fp~~<br>~~4~~<br>~~a~~<br>~~yf~~<br>~~a~~<br>~~yf~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~||_V_GS=0 V,<br>P:_V_DS=-15 V,<br>N:_V_DS= 15 V,<br>_f_=1 MHz<br>P:_V_DD=-15 V,<br>_V_GS=-10 V,_R_G=6W,<br>_I_D=-2 A<br>N:_V_DD=15 V,<br>_V_GS=10 V,_R_G=6W,<br>_I_D=2.3 A|-<br>376<br>500<br>-<br>207<br>275<br>-<br>196<br>261<br>-<br>75<br>100<br>-<br>12<br>18<br>-<br>12<br>17<br>-<br>5.6<br>-<br>-<br>4.4<br>-<br>-<br>7.7<br>-<br>-<br>2.3<br>-<br>-<br>15.3<br>-<br>-<br>8.3<br>-<br>-<br>2.8<br>-<br>-<br>1.4<br>-<br>=-2 A<br>=15 V,<br>~~[| fo~~<br>~~T=~~<br>~~[| |~~<br>~~**[**| ft~~<br>~~|~~<br>~~|~~<br>~~**[**| ft~~<br>~~|~~<br>~~**|**~~<br>~~**[**|~~<br>~~|~~<br>~~|~~<br>~~[|~~<br>~~|~~<br>~~[|~~<br>~~|~~<br>~~[|~~<br>~~ft~~<br>~~[|~~<br>~~|~~|pF<br>ns|
|Gate Charge Characteristics||||||
|Gate to source charge|P|_Q_gs||-<br>-1.2<br>-|nC|
|Gate to drain charge||_Q_gd|_V_DD=-15 V,|-<br>-0.6<br>-||
||||_I_D=-2 A,_V_GS=0 to|||
|Switching charge||_Q_g|-10 V|-<br>-5.0<br>-||
|Gate plateau voltage||_V_plateau||-<br>-3.1<br>-||
|Gate to source charge|N|_Q_gs||-<br>0.65<br>-||
|Gate to drain charge||_Q_gd|_V_DD=15 V,<br>_I_D=2.3 A,|-<br>0.45<br>-||
|Switching charge||_Q_g|_V_GS=0 to 10 V|1.5<br>-||
|Gate plateau voltage||_V_plateau||3.1<br>-||



Rev.2.1 

page 3 

2013-11-07 

||Cinfineon||
|---|---|---|
||Cinfineon|**BSL308C**|
|**Parameter**<br>~~ee~~||**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~|
||**Reverse Diode**||
||Diode continuous forward current|P<br>_I_S<br>-<br>-<br>-0.4<br>A|
||Diode pulse current<br>Diode forward voltage<br>Reverse recovery time<br>Reverse recovery charge|N<br>-<br>-<br>0.5<br>P<br>_I_S,pulse<br>-<br>-<br>-8.4<br>N<br>-<br>-<br>9<br>P<br>_V_SD<br>_V_GS=0 V,_I_F=-2 A,<br>_T_j=25 °C<br>-<br>-0.8<br>-1.1<br>V<br>N<br>_V_GS=0 V,_I_F=2.3 A,<br>_T_j=25 °C<br>-<br>0.83<br>1.1<br>P<br>_t_rr<br>-<br>14<br>-<br>ns<br>_Q_rr<br>-<br>-5.9<br>-<br>nC<br>N<br>_t_rr<br>-<br>14.4<br>-<br>ns<br>_Q_rr<br>-<br>2.9<br>-<br>nC<br>_V_R=-15 V,_I_F=-2A,<br>d_i_F/d_t_=-100 A/µs<br>_V_R=15 V,_I_F=2.3A<br>d_i_F/d_t_=100 A/µs<br>_T_C=25 °C<br>~~a~~<br>~~|~~<br>~~|~~<br>~~4~~<br>~~|~~<br>~~|~~<br>~~a~~<br>~~|~~<br>~~|~~<br>~~eee~~<br>~~Pfft~~<br>~~|~~<br>~~ED EEE~~<br>~~ee~~|
|Rev.2.1|Rev.2.1|page 4<br>2013-11-07|



Rev.2.1 

2013-11-07 

**BSL308C** 

## **1 Power dissipation (P)** 

_P_ tot=f( _T_ A) 

## **2 Power dissipation (N)** 

_P_ tot=f( _T_ A) 

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**----- Start of picture text -----**<br>
0.6  0.6<br>0.5  0.5<br>0.4  0.4<br>0.3  0.3<br>0.2  0.2<br>0.1  0.1<br>0  0<br>0  40  80  120  160  0  40  80  120  160<br>T A [°C]  T A [°C]<br> [W]   [W]<br>tot tot<br>P P<br>**----- End of picture text -----**<br>


## **3 Drain current (P)** 

_I_ D=f( _T_ A) parameter: _V_ GS≤-10 V 

## **4 Drain current (N)** 

_I_ D=f( _T_ A) parameter: _V_ GS≥10 V 

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**----- Start of picture text -----**<br>
2.4  2.4<br>2.2  2.2<br>2  2<br>1.8  1.8<br>1.6  1.6<br>1.4  1.4<br>1.2  1.2<br>1  1<br>\<br>0.8  A 0.8<br>0.6  0.6<br>0.4  0.4<br>0.2  0.2<br>“\|<br>0  0<br>0  40  80  120  160  0  40  80  120  160<br>T A [°C]  T A [°C]<br> [A]  -I D  [A]  I D<br>**----- End of picture text -----**<br>


Rev.2.1 

2013-11-07 

page 5 

**BSL308C** 

## **5 Safe operating area (P)** 

_I_ D=f( _V_ DS); _T_ A=25 °C; _D_ =0 

parameter: _t_ p 

## **6 Safe operating area (N)** 

_I_ D=f( _V_ DS); _T_ A=25 °C; _D_ =0 

parameter: _t_ p 

**==> picture [466 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [1 ] 10 [1 ]<br>1 µs  1 µs<br>10 µs  100 µs  10 µs<br>100 µs  1 ms<br>10 ms<br>1 ms<br>10 [0 ] 10 [0 ]<br>10 ms<br>DC<br>10 [-1 ] DC  10 [-1 ]<br>10 [-2 ] 10 [-2 ]<br>10 [-3 ] 10 [-3 ]<br>10 [-4 ] 10 [-4 ]<br>10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ]<br>V DS [V]  V DS [V]<br> [A]  I D  [A]  I D<br>**----- End of picture text -----**<br>


## **7 Max. transient thermal impedance (P)** 

_Z_ thJA=f( _t_ p) 

parameter: _D_ = _t_ p/ _T_ 

**8 Max. transient thermal impedance (N)** 

_Z_ thJA=f( _t_ p) 

parameter: _D_ = _t_ p/ _T_ 

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**----- Start of picture text -----**<br>
10 [3 ] 10 [3 ]<br>0.5  0.5<br>10 [2 ] 10 [2 ]<br>0.2  0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>0.05<br>10 [1 ] 10 [1 ]<br>0.02  0.01<br>0.01  single pulse<br>single pulse<br>10 [0 ] 10 [0 ]<br>10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ]<br>t p [s]  t p [s]<br> [K/W]   [K/W]<br>thJA thJA<br>Z Z<br>**----- End of picture text -----**<br>


Rev.2.1 

page 6 

2013-11-07 

**BSL308C** 

## **9 Typ. output characteristics (P)** 

_I_ D=f( _V_ DS); _T_ j=25 °C 

parameter: _V_ GS 

## **10 Typ. output characteristics (N)** 

_I_ D=f( _V_ DS); _T_ j=25 °C 

parameter: _V_ GS 

**==> picture [464 x 609] intentionally omitted <==**

**----- Start of picture text -----**<br>
6  6<br>-10 V<br>4.5 V<br>5  -4.5 V  5<br>10 V  4 V<br>3.5 V<br>-4 V  -3.5 V<br>4  4<br>-3.3 V<br>3.3 V<br>3  3<br>2  2<br>-3 V  3 V<br>1  1<br>-2.8 V  2.8 V<br>0  0<br>0  1  2  3  0  1  2  3<br>-V DS [V]  V DS [V]<br>11 Typ. drain-source on resistance (P) 12 Typ. drain-source on resistance (N)<br> DS(on)=f(=f( I  D); );  T  j=25 °C=25 °C R  DS(on)=f( I  D);  T  j=25 °C<br>parameter:  V  GS parameter:  V  GS<br>200  200<br>3.5 V  3 V<br>3.3 V<br>175  175<br>3.3 V<br>150  150<br>3.5 V<br>125  125<br>4 V<br>100  100<br>4.5 V<br>5 V  4 V<br>75  75<br>4.5 V<br>10 V  5 V<br>50  50<br>10 V<br>25  25<br>0  0<br>0  1  2  3  4  5  6  7  8  0  1  2  3  4  5  6  7  8<br>I D [A]  I D [A]<br> [A]  -I D  [A]  I D<br>]  ]<br>W W<br> [m  [m<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


## **11 Typ. drain-source on resistance (P)** 

_R_ DS(on)=f(=f( _I_ D); ); _T_ j=25 °C=25 °C parameter: _V_ GS 

Rev.2.1 

2013-11-07 

page 7 

**BSL308C** 

## **13 Typ. transfer characteristics (P)** 

_I_ D=f( _V_ GS); | _V_ DS |>2 | ID| RDS(on)max parameter: _T_ j 

## **14 Typ. transfer characteristics (N)** 

_I_ D=f( _V_ GS); _|V DS  |>2 | I D | R DS(on)max_ parameter: _T_ j 

**==> picture [467 x 611] intentionally omitted <==**

**----- Start of picture text -----**<br>
5  5<br>4  | 4<br>3 2  | | 25 °C  3 2  |<br>150 °C<br>150 °C<br>25 °C<br>1  | 1  |<br>0  0<br>0  1  DD 2  3  4  5  0  1  J} 2  3  4  5<br>-V GS [V]  V GS [V]<br>15 Drain-source on-state resistance (P) 16 Drain-source on-state resistance (N)<br> DS(on)=f(=f( T  j); );  I  D=-2.0 A; =-2.0 A;  V  GS=-10 V=-10 V R  DS(on)=f( T  j);  I  D=2.3 A;  V  GS=10 V<br>120  120<br>98%<br>80  80<br>2%<br>98%<br>2%<br>40  40<br>0  0<br>-60  -20  20  60  100  140  180  -60  -20  20  60  100  140  180<br>T j [°C]  T j [°C]<br> [A]   [A]<br>-I D I D<br>]  ]<br>W W<br>[m  [m<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


## **15 Drain-source on-state resistance (P)** 

_R_ DS(on)=f(=f( _T_ j); ); _I_ D=-2.0 A; =-2.0 A; _V_ GS=-10 V=-10 V 

Rev.2.1 

page 8 

2013-11-07 

**BSL308C** 

## **17 Typ. gate threshold voltage (P)** 

_V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=-11 µA 

## **18 Typ. gate threshold voltage (N)** 

_V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=11 µA 

**==> picture [467 x 609] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.8  2.8<br>2.4  2.4<br>max<br>2  2<br>max<br>1.6  1.6<br>typ<br>typ<br>1.2  1.2<br>min<br>min<br>0.8  0.8<br>0.4  0.4<br>0  0<br>-60  -20  20  60  100  140  180  -60  -20  20  60  100  140  180<br>T j [°C]  T j [°C]<br>19 Typ. capacitances (P) 20 Typ. capacitances (N)<br> =f( V  DS); );  V  GS=0 V; =0 V;  f  =1 MHz C  =f( V  DS);  V  GS=0 V;  f  =1 MHz<br>10 [3 ] 10 [3 ]<br>Ciss<br>Ciss<br>Coss<br>10 [2 ] 10 [2 ]<br>Coss<br>=<br>10 [1 ] Crss  10 [1 ] Crss<br>m d fe] aeee e<br>10 [0 ]<br>0  10  20  30  0  10  20  30<br>-V DS [V]  V DS [V]<br> [V]   [V]<br>GS(th) GS(th)<br>-V V<br> [pF]   [pF]<br>C C<br>**----- End of picture text -----**<br>


## **19 Typ. capacitances (P)** 

_C_ =f( _V_ DS); ); _V_ GS=0 V; =0 V; _f_ =1 MHz 

Rev.2.1 

page 9 

2013-11-07 

**BSL308C** 

## **21 Forward characteristics of reverse diode (P)** 

_I_ F=f( _V_ SD) parameter: _T_ j 

**22 Forward characteristics of reverse diode (N)** 

_I_ F=f( _V_ SD) 

parameter: _T_ j 

**==> picture [466 x 610] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [1 ] 10 [1 ]<br>25 °C<br>10 [0 ] 150 °C, 98%  10 [0 ]<br>150 °C  150 °C<br>25 °C<br> 150°C, 98%<br>10 [-1 ] 10 [-1 ]<br>25 °C, 98%  25 °C, 98%<br>a n ak<br>10 [-2 ] 10 [-2 ]<br>0  0.5  1  1.5  0  0.5  1  1.5<br>-V SD [V]  V SD [V]<br>23 Avalanche characteristics (P) 24 Avalanche characteristics (N)<br>=f( t  AV); );  R  GS=25 W=25 WW I  AS=f( t  AV);  R  GS=25 W<br>parameter:  T  j(start) parameter:  T  j(start)<br>10 [1 ] 10 [1 ]<br>25 °C<br>25 °C<br>100 °C<br>100 °C<br>10 [0 ] 125 °C  10 [0 ] 125 °C<br>10 [-1 ] 10 [-1 ]<br>10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ] 10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ]<br>t AV [µs]  t AV [µs]<br> [A]  -I F  [A]  I F<br> [A]   [A]<br>-I AV I AV<br>**----- End of picture text -----**<br>


## **23 Avalanche characteristics (P)** 

_I_ AS=f( _t_ AV); ); _R_ GS=25 W=25 WW parameter: _T_ j(start) 

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**BSL308C** 

## **25 Typ. gate charge (P)** 

## _V_ GS=f( _Q_ gate); _I_ D=-2.0 A pulsed 

parameter: _V_ DD 

**==> picture [224 x 268] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>8<br>-24 V<br>6  VA<br>-15 V<br>-6 V<br>4<br>UY<br>2<br>0  /<br>0  1  2  3  4  5  6<br>-Q gate [nC]<br> [V]<br>GS<br>-V<br>**----- End of picture text -----**<br>


## **27 Drain-source breakdown voltage (P)** 

_V_ BR(DSS)=f( _T_ j); _I_ D=-250 µA 

**==> picture [228 x 268] intentionally omitted <==**

**----- Start of picture text -----**<br>
36<br>34<br>32<br>30<br>28<br>26<br>24<br>-60  -20  20  60  100  140  180<br>T j [°C]<br> [V]<br>BR(DSS)<br>-V<br>**----- End of picture text -----**<br>


## **26 Typ. gate charge (N)** 

_V_ GS=f( _Q_ gate); _I_ D=2.3 A pulsed 

parameter: _V_ DD 

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**----- Start of picture text -----**<br>
10<br>8<br>15 V<br>A<br>6<br>6 V<br>24 V<br>4<br>/<br>2<br>[<br>0<br>0  1  2  3  4  5  6<br>Q gate [nC]<br> [V]<br>GS<br>V<br>**----- End of picture text -----**<br>


**28 Drain-source breakdown voltage (N)** _V_ BR(DSS)=f( _T_ j); _I_ D=250 µA 

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**----- Start of picture text -----**<br>
36<br>34<br>32<br>30<br>28<br>26<br>24<br>-60  -20  20  60  100  140  180<br>T j [°C]<br> [V]<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Rev.2.1 

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**BSL308C** 

## **TSOP-6** 

## **Package Outline:** 

## **Footprint:** 

## **Packaging:** 

Dimensions in mm 

Rev.2.1 

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2013-11-07 

**BSL308C** 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Rev.2.1 

page 13 

2013-11-07 



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---

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