# Dual MOSFET, Dual N Channel, 25 V, 50 A, 3500 µohm

![Product image](https://novapart.co/image/farnell:4344016RL/)

**URL**: https://novapart.co/products/BSG0812NDATMA1/dual-mosfet-n-channel-25-v-50-a-3500-ohm
**SKU**: BSG0812NDATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.6340
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | Dual N Channel |
| Product Range | OptiMOS 5 Series |
| Qualification | - |
| Transistor Case Style | TISON |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 6.25W |
| Power Dissipation P Channel | - |
| Drain Source Voltage Vds N Channel | 25V |
| Drain Source Voltage Vds P Channel | - |
| Continuous Drain Current Id N Channel | 50A |
| Continuous Drain Current Id P Channel | - |
| Drain Source On State Resistance N Channel | 3500µohm |
| Drain Source On State Resistance P Channel | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4344016RL/)

## **BSG0812ND** 

**==> picture [474 x 323] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||
|---|---|---|---|---|---|---|
|Product Summary|
|Power Block|
|Q1|Q2|
|Features|
|V|DS|25|25|V|
|• Dual asymmetric N-channel OptiMOS™5 MOSFET|
|R|DS(on),max|V|GS=10 V|3.5|0.9|mW|
|• Logic level (4.5V rated)|
|V|GS=4.5 V|4.6|1.3|
|• Pb-free lead  plating; RoHS compliant|
|I|D|50|50|A|
|• Optimized for high performance buck converters|
|• Halogen-free according to IEC61249-2-21|S1/D2  (VPhase)|(5)|Q1|(9)|(4)|D1  (Vin)|
|S1/D2  (VPhase)|a|(6)|le|(3)|D1  (Vin)|
|• Qualified according to JEDEC|[1)]|for target applications|
|S1/D2  (VPhase)|(7)|(2)|S1  (VPhase)|
|=a|Q2|)|ae|
|G2  (GLS)|(8)|(1)|G1  (GHS)|
|5_|]|(10)|G@t)|S2  (GND)|Ld||_|e|
|Top view|
|Pin1|G1|s1|D1|D1|
|I|Ne|(GHS)|(VPhase)|(Vin)|(Vin)|
|es|aa|"||
|.|(GBs|Halogen-Free|Boomers|
|Pb-Free|pO|
|$2|
|Type|Package|Marking|™|
|BSG0812ND|PG-TISON8-4|0812ND|
|—|(GND)|(9)|

**----- End of picture text -----**<br>


## **Maximum ratings,** at _T_ j=25 °C, unless otherwise specified[2)] 

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**----- Start of picture text -----**<br>
|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Value|Unit|
|Q1|Q2|
|Continuous drain current|I|D|T|C=70 °C,|V|GS=10 V|50|50|A|
|T|C=70 °C,|V|GS=4.5 V|49|50|
|T|A=25 °C,|
|29|50|
|V|GS=4.5 V|[3)]|
|T|A=25 °C,|
|18|37|
|V|GS=4.5 V|[4)]|
|Pulsed drain current|I|D,pulse|T|C=70 °C|160|160|
|Q1:|I|D=10 A,|
|Avalanche energy, single pulse|E|AS|Q2:|I|D=20 A,|26|137|mJ|
|R|GS=25 W|
|Gate source voltage|V|GS|±16|V|
|Power dissipation|P|tot|T|A=25 °C|[3)]|6.25|6.25|W|
|T|A=25 °C|[4)]|2.5|2.5|
|Operating and storage temperature|T|j,|T|stg|-55 ... 150|°C|
|IEC climatic category; DIN IEC 68-1|55/150/56|

**----- End of picture text -----**<br>


1) J-STD20 and JESD22 

Rev.2.2 

page 1 

2017-08-11 

|**BSG0812ND**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>Cinfineon~~rer~~|**BSG0812ND**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>Cinfineon~~rer~~|**BSG0812ND**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>Cinfineon~~rer~~|**BSG0812ND**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>Cinfineon~~rer~~|**BSG0812ND**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>Cinfineon~~rer~~|**BSG0812ND**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>Cinfineon~~rer~~|**BSG0812ND**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>Cinfineon~~rer~~|**BSG0812ND**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>Cinfineon~~rer~~|
|---|---|---|---|---|---|---|---|
|**Thermal characteristics**||||||||
|Thermal resistance, junction -|Q1|_R_thJC||-|-|4.3|K/W|
|case|Q2|||-|-|1.8||
|Thermal resistance, junction -<br>ambient2)|Q1 <br>Q2|_R_thJA|Application specific<br>board3)|-|-|20||
||Q1<br>Q2||6 cm2cooling area4)|-|-|50||



**Electrical characteristics,** at _T_ j=25 °C, unless otherwise specified 

## **Static characteristics** 

Drain-source breakdown voltage Q1 _V_ (BR)DSS _V_ GS=0 V, _I_ D=1 mA 25[6)] - - V Q2 ~~TT~~ Gate threshold voltage Q1 _V_ GS(th) _V_ DS= _V_ GS, _I_ D=250 µA 1.2 1.6 2 Q2 ~~Te~~ Zero gate voltage drain current Q1 _I_ DSS _V_ DS=25 V, _V_ GS=0 V, - - 1 µA _T_ =25 °C Q2 j ~~eee~~ Q1 _V_ DS=25 V, _V_ GS=0 V, - - 100 _T_ =150 °C Q2 j ~~A~~ Gate-source leakage current Q1 _I_ GSS _V_ GS=20 V, _V_ DS=0 V - - 100 nA Q2 ~~cee~~ Drain-source on-state Q1 _R_ DS(on) - 3.7 4.6 mW _V_ GS=4.5 V, _I_ D=20 A ~~||~~ resistance Q2 - 1.1 1.3 ~~oe~~ Q1 - 2.8 3.5 _V_ GS=10 V, _I_ D=20 A Q2 - 0.8 0.9 ~~a: =—===~~ Gate resistance Q1 _R_ G - 0.7 1.2 W Q2 - 0.7 1.2 ~~eee=~~ Transconductance Q1 _g_ fs | _V_ DS|>2| _I_ D| _R_ DS(on)max, 47 94 ~~.~~ - S Q2 _I_ D=20 A 90 180 - ~~**=** ==~~ 

- 2) Only one of both transistors active 

- 3) 8 Layers copper 70µm thickness. PCB in still air. 

4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

Rev.2.2 

page 2 

2017-08-11 

|Cinfineon|||||
|---|---|---|---|---|
|Cinfineon|||**BSG0812ND**||
||||||
|**Parameter**||**Symbol **|**Conditions**<br>**Values**|**Unit**|
||||**min.**<br>**typ.**<br>**max.**||
|**Dynamic characteristics**|||||
|Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|Q1 _C_iss<br>Q2<br>Q1 _C_oss<br>Q2<br>Q1 Crss<br>Q2<br>Q1 _t_d(on)<br>Q2<br>Q1 _t_r<br>Q2<br>Q1 _t_d(off)<br>Q2<br>Q1 _t_f<br>Q2<br>~~Sy~~<br>~~|~~<br>~~Sy~~<br>~~|~~<br>~~Sy~~<br>~~|~~<br>~~Sy~~<br>~~|~~<br>~~4~~<br>~~|~~<br>~~4~~<br>~~|~~<br>~~4~~<br>~~|~~||-<br>780<br>1100<br>-<br>2700<br>3700<br>-<br>390<br>520<br>-<br>1400<br>1900<br>-<br>38<br>-<br>-<br>130<br>-<br>-<br>4.3<br>-<br>5.6<br>-<br>-<br>4.7<br>-<br>-<br>4.3<br>-<br>-<br>4.3<br>-<br>-<br>8.8<br>-<br>-<br>1.4<br>-<br>-<br>2.6<br>-<br>_V_GS=0 V,<br>_V_DS= 12 V,_f_=1 MHz<br>_V_IN=12 V,<br>_V_DRV=5 V,<br>_f_SW=500 kHz,<br>_I_OUT=30 A5)<br>~~**F**t~~<br>~~t~~<br>~~**F**t~~<br>~~t~~<br>~~Ft~~<br>~~PFtT~~<br>~~PF tT~~<br>~~PFtT~~<br>~~**F**t~~<br>~~t~~<br>~~**F**t~~<br>~~t~~<br>~~**F**t~~<br>~~t~~|pF<br>ns|
|Gate Charge Characteristics|||||
|Gate to source charge<br>Gate to drain charge|Q1 _Q_gs<br>_Q_gd<br>~~S|~~<br>~~|~~||-<br>2.0<br>-<br>-<br>1.4<br>-<br>~~Ft~~<br>~~Pt~~|nC|
|Gate charge total||_Q_g<br>~~|~~|-<br>5.6<br>8.4<br>~~Ft~~||
|Gate plateau voltage<br>Gate to source charge|Q2|_V_plateau<br> _Q_gs<br>~~|~~<br>~~|~~|-<br>2.6<br>-<br>-<br>6.4<br>-<br>_V_DD=12 V,<br>_I_D=30 A,<br>_V_GS=0 to 4.5 V<br>~~Pt~~<br>~~Ft~~|V<br>nC|
|Gate to drain charge||_Q_gd<br>~~|~~|-<br>4.7<br>-<br>~~Pt~~||
|Gate charge total||_Q_g<br>~~|~~|-<br>20<br>29<br>~~Ft~~||
|Gate plateau voltage<br>Output charge<br>5)For more information see application note n° TBD|_V_plateau<br>-<br>2.3<br>-<br>Q1 _Q_oss<br>-<br>8<br>-<br>Q2<br>-<br>27<br>-<br>For more information see application note n° TBD<br>_V_DD=12 V,_V_GS=0 V<br>~~}-—E~~<br>~~ee~~|||V<br>nC|



- 5) For more information see application note n° TBD 

6) The device can withstand a pulse of not more than 30 V for a duration of up to 2 ns at a frequency of 600 kHz with maximum buck converter input voltage _V_ IN=16 V. 

Rev.2.2 

page 3 

2017-08-11 

|**Parameter**||**Symbol **|**Conditions**||**Values**||**Unit**|
|---|---|---|---|---|---|---|---|
|||||**min.**|**typ.**|**max.**||
|**Reverse Diode**||||||||
|Diode continuous forward current<br>Q1 _I_S<br>Q2<br>Diode pulse current<br>Q1 _I_S,pulse<br>Q2<br>Diode forward voltage<br>Q1 _V_SD<br>Q2<br>Reverse recovery charge<br>Q1 _Q_rr<br>Q2<br>_T_C=25 °C<br>_V_GS=0 V,_I_F=20 A,<br>_T_j=25 °C<br>_V_R=12 V,_I_F=_I_S,<br>d_i_F/d_t_=100 A/µs<br>~~I~~||||-<br>-<br>-<br>-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>0.84<br>0.77<br>10<br>20|29<br>50<br>160<br>160<br>1<br>1<br>-<br>-|A<br>V<br>nC|



Rev.2.2 

page 4 

2017-08-11 

## **1 Power dissipation (Q1) 2 Power dissipation (Q2)** _P_ tot=f( _T_ A)[4)] _P_ tot=f( _T_ A)[4)] 

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3 3<br>2.5 2.5<br>2 2<br>1.5 1.5<br>1 1<br>0.5 0.5<br>0 0<br>0 40 80 120 160 0 40 80 120 160<br>T A [°C]  T A [°C]<br>3 Drain current (Q1) 4 Drain current (Q2)<br>=f( T  C)) I  D=f( T  C)<br>parameter:  V  GS≥10 V≥10 V parameter:  V  GS≥10 V<br>60 60<br>50 50<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0 40 80 120 160 0 40 80 120 160<br>T C [°C]  T C [°C]<br> [W]   [W]<br>tot tot<br>P P<br> [A]   [A]<br>I D I D<br>**----- End of picture text -----**<br>


## **3 Drain current (Q1)** 

_I_ D=f( _T_ C)) 

parameter: _V_ GS≥10 V≥10 V 

Rev.2.2 

page 5 

2017-08-11 

## **5 Safe operating area (Q1)** 

_I_ D=f( _V_ DS); _T_ C=25 °C; _D_ =0 

parameter: _t_ p 

## **6 Safe operating area (Q2)** 

_I_ D=f( _V_ DS); _T_ C=25 °C; _D_ =0 

parameter: _t_ p 

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10 [3 ]<br>1 µs<br>10 [2 ]<br>10 µs<br>100 µs<br>1 ms<br>10 [1 ]<br>10 ms<br>DC<br>10 [0 ]<br>10 [-1 ]<br>10 [-1 ] 10 [0 ] 10 [1 ] 10<br>V DS [V]<br>[A]<br>I D<br>**----- End of picture text -----**<br>


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10 [3 ]<br>1 µs<br>10 [2 ] 10 µs<br>10 ms<br>100 µs<br>1 ms<br>10 [1 ]<br>DC<br>10 [0 ]<br>10 [-1 ]<br>10 [-1 ] 10 [0 ] 10 [1 ] 10<br>V DS [V]<br> [A]<br>I D<br>**----- End of picture text -----**<br>


**7 Max. transient thermal impedance (Q1)** _Z_ thJC=f( _t_ p) 

parameter: _D_ = _t_ p/ _T_ 

**8 Max. transient thermal impedance (Q2)** _Z_ thJC=f( _t_ p) 

parameter: _D_ = _t_ p/ _T_ 

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**----- Start of picture text -----**<br>
10 [1 ] 10 [1 ]<br>0.5  10 [0 ] 0.5<br>0.2  0.2<br>10 [0 ]<br>0.1<br>0.1<br>0.05<br>0.05  0.02<br>10 [-1 ] 0.01<br>0.02<br>single pulse<br>0.01<br>single pulse<br>10 [-1 ] 10 [-2 ]<br>10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10<br>t p [s]  t p [s]<br> [K/W]   [K/W]<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br>


Rev.2.2 

page 6 

2017-08-11 

## **9 Typ. output characteristics (Q1)** 

## **10 Typ. output characteristics (Q2)** 

_I_ D=f( _V_ DS); ); _T_ j=25 °C=25 °C 

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**----- Start of picture text -----**<br>
=f( V  DS); );  T  j=25 °C=25 °C I  D=f( V  DS);  T  j=25 °C<br>parameter:  V  GS parameter:  V  GS<br>160 4 V  400<br>4.5 V<br>10 V<br>10 V<br>3.5 V  4 V<br>3.3 V<br>4.5 V  wl<br>3.5 V<br>120 300<br>3.3 V<br>3 V<br>3 V<br>2.8 V<br>80 200<br>2.8 V<br>40 100<br>0 | 0 E-<br>0 1 2 3 0 1 2 3<br>V DS [V]  V DS [V]<br>11 Typ. drain-source on resistance (Q1) 12 Typ. drain-source on resistance (Q2)<br> DS(on)=f(=f( I  D); );  T  j=25 °C=25 °C R  DS(on)=f( I  D);  T  j=25 °C<br>parameter:  V  GS parameter:  V  GS<br> [A]   [A]<br>I D I D<br>**----- End of picture text -----**<br>


parameter: _V_ GS 

## **11 Typ. drain-source on resistance (Q1)** 

_R_ DS(on)=f(=f( _I_ D); ); _T_ j=25 °C=25 °C parameter: _V_ GS 

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**----- Start of picture text -----**<br>
10 2<br>3 V<br>8<br>3.3 V<br>1.5<br>3.5 V<br>6 3 V  4 V<br>4.5 V<br>3.3 V<br>1 5 V<br>3.5 V<br>4 4 V  10 V<br>4.5 V<br>5 V<br>10 V<br>0.5<br>2<br>0 0<br>0 20 40 60 80 0 20 40 60 80<br>I D [A]  I D [A]<br>]  ]<br>W W<br> [m  [m<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


Rev.2.2 

page 7 

2017-08-11 

## **13 Typ. transfer characteristics (Q1)** 

_I_ D=f( _V_ GS); | _V_ DS |>2 | _I_ D| _R_ DS(on)max parameter: _T_ j 

## **14 Typ. transfer characteristics (Q2)** 

_I_ D=f( _V_ GS); _|V_ DS |>2 | _I_ D _| R_ DS(on)max parameter: _T_ j 

**==> picture [466 x 611] intentionally omitted <==**

**----- Start of picture text -----**<br>
160 400<br>120 | 300 |<br>80 200<br>150 °C<br>40 25 °C  100<br>150 °C<br>25 °C<br>i t d<br>0 0<br>0 1 2 3 4 0 1 2 3 4<br>V GS [V]  V GS [V]<br>15 Drain-source on-state resistance (Q1) 16 Drain-source on-state resistance (Q2)<br> DS(on)=f(=f( T  j); );  I  D=20 A; =20 A;  V  GS=10 V=10 V R  DS(on)=f( T  j);  I  D=20 A;  V  GS=10 V<br>7 2<br>6<br>1.5<br>5<br>4<br>1<br>typ  typ<br>3<br>2<br>0.5<br>1<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C]  T j [°C]<br> [A]   [A]<br>I D I D<br>]  ]<br>W W<br>[m  [m<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


## **15 Drain-source on-state resistance (Q1)** 

_R_ DS(on)=f(=f( _T_ j); ); _I_ D=20 A; =20 A; _V_ GS=10 V=10 V 

Rev.2.2 

page 8 

2017-08-11 

## **17 Typ. gate threshold voltage (Q1)** 

_V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=250 µA 

## **18 Typ. gate threshold voltage (Q2)** 

_V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=250 µA 

**==> picture [473 x 610] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.8 2.8<br>2.4 2.4<br>2 2<br>1.6 1.6<br>1.2 1.2<br>0.8 0.8<br>0.4 0.4<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C]  T j [°C]<br>19 Typ. capacitances (Q1) 20 Typ. capacitances (Q2)<br>C  =f( V  DS);  V  GS=0 V;  f  =1 MHz C  =f( V  DS);  V  GS=0 V;  f  =1 MHz<br>10 [4] 10 [4 ]<br>Ciss  Ciss<br>10 [3 ] = g l<br>10 [3 ]<br>Coss<br>Coss<br>10 [2 ]<br>Crss<br>Crss<br>‘ t a m cue<br>10 [2 ]<br>10 [1 ]<br>10 [0 ] 10 [1 ]<br>0 5 10 15 20 25 0 5 10 15 20 25<br>V DS [V]  V DS [V]<br> [V]   [V]<br>GS(th) GS(th)<br>V V<br> [pF]   [pF]<br>C C<br>**----- End of picture text -----**<br>


Rev.2.2 

page 9 

2017-08-11 

**BSG0812ND** 

## **21 Forward characteristics of reverse diode (Q1)** 

**==> picture [468 x 705] intentionally omitted <==**

**----- Start of picture text -----**<br>
21 Forward characteristics of reverse diode (Q1) 22 Forward characteristics of reverse diode (Q2)<br>I  F=f( V  SD) I  F=f( V  SD)<br>parameter:  T  j parameter:  T  j<br>10 [3 ] 10 [3 ]<br>10 [2 ] 10 [2 ]<br>25 °C<br>150 °C  25 °C  150 °C<br>10 [1 ] 10 [1 ]<br>10 [0 ] 10 [0 ]<br>10 [-1 ] 10 [-1 ]<br>10 [-2 ] ae 10 [-2 ] ge<br>0 0.4 0.8 1.2 0 0.4 0.8 1.2<br>V SD [V]  V SD [V]<br>23 Avalanche characteristics (Q1) 24 Avalanche characteristics (Q2)<br>I  AS=f( t  AV);  R  GS=25 W I  AS=f( t  AV);  R  GS=25 W<br>parameter:  T  j(start) parameter:  T  j(start)<br>10 [2 ] 10 [2 ]<br>25 °C<br>125 °C<br>100 °C<br>10 [1 ] 25 °C  10 [1 ]<br>100 °C<br>125 °C<br>10 [0 ] NES 10 [0 ]<br>10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ] 10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ]<br>t AV [µs]  t AV [µs]<br>Rev.2.2 page 10<br> [A]   [A]<br>I F I F<br> [A]   [A]<br>I AV I AV<br>**----- End of picture text -----**<br>


Rev.2.2 

2017-08-11 

## **25 Typ. gate charge (Q1)** 

_V_ GS=f( _Q_ gate); _I_ D=20 A pulsed parameter: _V_ DD 

## **26 Typ. gate charge (Q2)** 

_V_ GS=f( _Q_ gate); _I_ D=20 A pulsed parameter: _V_ DD 

**==> picture [464 x 268] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 10<br>8 8<br>20 V<br>12 V<br>5 V<br>12 V<br>6 20 V  6 5 V<br>4 4<br>2 2<br>ft ie<br>0 0<br>0 2 4 6 8 10 12 14 0 10 20 30 40 50<br>Q gate [nC]  Q gate [nC]<br> [V]   [V]<br>GS GS<br>V V<br>**----- End of picture text -----**<br>


## **27 Drain-source breakdown voltage (Q1)** 

_V_ BR(DSS)=f( _T_ j); _I_ D=1 mA 

## **28 Drain-source breakdown voltage (Q2)** 

_V_ BR(DSS)=f( _T_ j); _I_ D=1 mA 

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**----- Start of picture text -----**<br>
28 28<br>27 27<br>26 26<br>25 25<br>24 24<br>23 23<br>22 22<br>21 21<br>20 20<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C]  T j [°C]<br> [V]   [V]<br>BR(DSS) BR(DSS)<br>V V<br>**----- End of picture text -----**<br>


Rev.2.2 

page 11 

2017-08-11 

## **Package Outline PG-TISON8-4** 

Rev.2.2 

page 12 

2017-08-11 

## **Boardpads & Apertures** 

## **PG-TISON8-4** 

**All the dimensions in mm** 

Rev.2.2 

page 13 

2017-08-11 

**BSG0812ND** 

## BSG0812ND 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.2|2017-08-29|Update package outline|



## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

14 



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- [View this product on Novapart](https://novapart.co/products/BSG0812NDATMA1/dual-mosfet-n-channel-25-v-50-a-3500-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/bsg0812ndatma1/mosfet-dual-n-ch-25v-50a-tison/dp/4344016RL)
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