# Dual MOSFET, N Channel, 25 V, 25 V, 50 A, 50 A, 0.003 ohm

![Product image](https://novapart.co/image/farnell:3703508/)

**URL**: https://novapart.co/products/BSG0810NDIATMA1/dual-mosfet-n-channel-25-v-50-a-0003-ohm
**SKU**: BSG0810NDIATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.8680
**Stock**: 200+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 5 Series |
| Qualification | - |
| Transistor Case Style | TISON |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 6.25W |
| Power Dissipation P Channel | 6.25W |
| Drain Source Voltage Vds N Channel | 25V |
| Drain Source Voltage Vds P Channel | 25V |
| Continuous Drain Current Id N Channel | 50A |
| Continuous Drain Current Id P Channel | 50A |
| Drain Source On State Resistance N Channel | 0.003ohm |
| Drain Source On State Resistance P Channel | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3703508/)

**BSG0810NDI** 

## **Product Summary** 

## **Power Block** 

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**----- Start of picture text -----**<br>
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Q1|Q2|
|Features|
|• Dual asymmetric N-channel OptiMOS™5 MOSFET|V|DS|25|25|V|
|• Logic level (4.5V rated)Logic level (4.5V rated)|R|DS(on),max|V|GS=10 V|3|0.85|mW|
|• Pb-free lead  plating; RoHS compliant|V|GS=4.5 V|4|1.2|
|• Optimized for high performance Buck converter|I|D|50|50|A|
|• Qualified according to JEDEC|[1)]|for target applications|S1/D2  (VPhase)|(5)|Q1|(9)|(4)|D1  (Vin)|
|S1/D2  (VPhase)|al|(6)|(3)|D1  (Vin)|
|• Halogen-free according to IEC61249-2-21|S1/D2  (VPhase)|=a|(7)|)ih|mee|(2)|S1  (VPhase)|
|Q2|
|• Monolithic integrated Schottky like diode|G2  (GLS)||P|(8)||a|(10)|ytGt)|S2  (GND)|—E||_||(1)|e|G1  (GHS)|
|Top view|

**----- End of picture text -----**<br>


- Logic level (4.5V rated)Logic level (4.5V rated) 

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||||
|---|---|---|
|Type|Package|Marking|
|BSG0810NDI|PG-TISON8-4|0810NDI|

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**Maximum ratings,** at Tj=25°C, unless otherwise specified[2)] 

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|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Value|Unit|
|Q1|Q2|
|Continuous drain current|I|D|T|C=70 °C,|V|GS=10 V|50|50|A|
|T|C=70 °C,|V|GS=4.5 V|50|50|
|T|A=25 °C,|
|31|50|
|V|GS=4.5 V|[3)]|
|T|A=25 °C,|
|19|39|
|V|GS=4.5 V|[4)]|
|Pulsed drain current|I|D,pulse|T|C=70 °C|160|160|
|Q1:|I|D=10 A,|
|Avalanche energy, single pulse|E|AS|Q2:|I|D=20 A,|30|90|mJ|
|R|GS=25 W|
|Gate source voltage|V|GS|T|j=25 °C|±16|V|
|Power dissipation|P|tot|T|A=25 °C|[3)]|6.25|6.25|W|
|T|A=25 °C|[4)]|2.5|2.5|
|Operating and storage temperature|T|j,|T|stg|-55 ... 150|°C|
|IEC climatic category; DIN IEC 68-1|55/150/56|

**----- End of picture text -----**<br>


1) J-STD20 and JESD22 

Rev.2.1 

page 1 

2016-03-08 

|**BSG0810NDI**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>Cinfineon~~2~~|**BSG0810NDI**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>Cinfineon~~2~~|**BSG0810NDI**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>Cinfineon~~2~~|
|---|---|---|
|**Thermal characteristics**|||
|Thermal resistance, junction -|Q1 _R_thJC<br>-<br>-<br>4.3|K/W|
|case|Q2<br>-<br>-<br>1.8||
|Thermal resistance, junction -<br>ambient2)|Q1 _R_thJA<br>Q2<br>Application specific<br>board3)<br>-<br>20<br>-||
||Q1<br>Q2<br>-<br>-<br>6 cm2cooling area4)<br>50||
|**Electrical characteristics,**at_T_j=25 °C, unless otherwise specified|||
|**Static characteristics**|||
|Drain-source breakdown voltage|Q1<br>Q2<br>-<br>-<br>256)<br>_V_(BR)DSS _V_GS=0 V,_I_D=1 mA<br>~~TTT~~|V|
|Breakdown voltage temperature<br>coefficient|Q1<br>Q2<br>15<br>d_V_(BR)DSS<br>/d_T_j<br>_I_D=10 mA, referenced<br>to 25 °C<br>-<br>-<br>~~yp~~|mV/K|
|Gate threshold voltage<br>Zero gate voltage drain current|Q1<br>Q2<br>Q1 _I_DSS<br>-<br>-<br>1<br>Q2<br>-<br>-<br>500<br>Q1<br>-<br>-<br>100<br>Q2<br>-<br>3<br>-<br>_V_DS=20 V,_V_GS=0 V,<br>_T_j=125 °C<br>_V_DS=25 V,_V_GS=0 V,<br>_T_j=25 °C<br>2<br>1.2<br>1.6<br>_V_GS(th)<br>_V_DS=_V_GS,_I_D=250 µA<br>~~oe~~<br>~~oon~~<br>~~a eo~~|µA<br>mA<br>V|
|Gate-source leakage current<br>Gate resistance<br>Transconductance<br>Drain-source on-state<br>resistance|Q1 _I_GSS<br>Q2<br>Q1 _R_DS(on)<br>-<br>3.2<br>4.0<br>Q2<br>-<br>1.0<br>1.1<br>Q1<br>-<br>2.4<br>3.0<br>Q2<br>-<br>0.7<br>0.9<br>Q1 _R_G<br>-<br>0.7<br>1.2<br>Q2<br>-<br>0.8<br>1.3<br>Q1 _g_fs<br>47<br>94<br>-<br>Q2<br>55<br>110<br>-<br>_V_GS=4.5 V,_I_D=20 A<br>_V_GS=10 V,_I_D=20 A<br>|_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=20 A<br>-<br>_V_GS=16 V,_V_DS=0 V<br>-<br>100<br>~~oe~~<br>~~fee~~<br>~~eee~~<br>~~eee~~<br>~~==~~|mW<br>W<br>S<br>nA|



2) Remark: only one of both transistors active Rev.2.1 

page 2 

2016-03-08 

|Cinfineon|||||
|---|---|---|---|---|
|Cinfineon||**BSG0810NDI**|**BSG0810NDI**||
||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|**Unit**|
||||**min.**<br>**typ.**<br>**max.**||
|**Dynamic characteristics**|||||
|Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time<br>**Gate Charge Characteristics**|Q1 _C_iss<br>Q2<br>Q1 _C_oss<br>Q2<br>Q1 Crss<br>Q2<br>Q1 _t_d(on)<br>Q2<br>Q1 _t_r<br>Q2<br>Q1 _t_d(off)<br>Q2<br>Q1 _t_f<br>Q2<br>~~a~~<br>~~|~~<br>~~a~~<br>~~|~~<br>~~4~~<br>~~|~~<br>~~4~~<br>~~|~~<br>~~4~~<br>~~|~~<br>~~4~~<br>~~|~~<br>~~4~~<br>~~|~~|_V_GS=0 V,<br>_V_DS= 12 V,_f_=1 MHz<br>_V_IN=12 V,<br>_V_DRV=5 V,<br>_F_SW=500 KHz,<br>_I_OUT=30 A5)|-<br>770<br>1040<br>-<br>2300<br>3100<br>-<br>390<br>520<br>-<br>1400<br>1900<br>-<br>33<br>-<br>-<br>110<br>-<br>-<br>4.3<br>-<br>5.1<br>-<br>-<br>4.7<br>-<br>-<br>4.0<br>-<br>-<br>4.3<br>-<br>-<br>8<br>-<br>-<br>1.4<br>-<br>-<br>2.4<br>-<br>5)<br>~~Pt ~~~~**|**~~<br>~~Pt~~<br>~~Pt ~~~~**|**~~<br>~~Pt~~<br>~~Pt ~~~~**|**~~<br>~~Pt~~<br>~~Pt ~~~~**|**~~<br>~~Pt~~<br>~~Pt ~~~~**|**~~<br>~~Pt~~<br>~~Pt ~~~~**|**~~<br>~~Pt~~<br>~~Pt ~~~~**|**~~<br>~~Ft~~|pF<br>ns|
|Gate to source charge<br>Gate to drain charge<br>Gate charge total<br>Gate plateau voltage<br>Gate to source charge<br>Gate to drain charge<br>Gate charge total|Q1 _Q_gs<br>-<br>2.2<br>-<br>_Q_gd<br>-<br>1.6<br>-<br>_Q_g<br>-<br>5.6<br>8.4<br>_V_plateau<br>-<br>2.9<br>-<br>Q2 _Q_gs<br>-<br>5.9<br>-<br>_Q_gd<br>-<br>4.2<br>-<br>_Q_g<br>-<br>16<br>25<br>_V_DD=12 V,<br>_I_D=20 A,<br>_V_GS=0 to 4.5 V<br>~~|~~<br>~~Pt |~~<br>~~|~~<br>~~Pt |~~<br>~~|~~<br>~~Pt |~~<br>~~|~~<br>~~Pt |~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**P**t |~~<br>~~|~~<br>~~|~~|||nC<br>V<br>nC<br>~~|~~|
|Gate plateau voltage<br>Output charge|_V_plateau<br>Q1 _Q_oss<br>Q2<br>~~+~~<br>~~oe~~|_V_DD=12 V,_V_GS=0 V|-<br>2.6<br>-<br>-<br>8<br>-<br>-<br>26<br>-<br>~~=~~|V<br>nC|



- 3) 8 Layers copper 70μm thickness. PCB in still air 

- 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air. 

Rev.2.1 

page 3 

2016-03-08 

**BSG0810NDI Parameter Symbol Conditions Values Unit min. typ. max. Reverse Diode** Diode continuous forward current Q1 _I_ S - - 29 A Q2 50 _T_ C=25 °C Diode pulse current Q1 _I_ S,pulse - - 160 Q2 - - 160 Diode forward voltage Q1 _V_ SD _V_ GS=0 V, _I_ F=20 A, - 0.85 1 V _T_ =25 °C j Q2 _V_ GS=0 V, _I_ F=11 A, - 0.49 0.7 _T_ =25 °C j Reverse recovery charge Q1 _Q_ rr _V_ R=12 V, _I_ F= _I_ S, - 10 - nC d _i_ F/d _t_ =100 A/µs Q2 ~~SHE~~ 5) For more information see application note n° TBD 6) The device can withstand a pulse of not more than 30V for a duration of up to 2ns at a frequency of 600KHz with maximum buck converter input voltage VIN=16 V 

Rev.2.1 

page 4 

2016-03-08 

## **1 Power dissipation (Q1) 2 Power dissipation (Q2)** _P_ tot=f( _T_ A)[4)] _P_ tot=f( _T_ A)[4)] 

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3 3<br>2.5 2.5<br>2 2<br>1.5 1.5<br>1 1<br>0.5 0.5<br>0 0<br>0 40 80 120 160 0 40 80 120 160<br>T A [°C]  T A [°C]<br> [W]   [W]<br>tot tot<br>P P<br>**----- End of picture text -----**<br>


## **3 Drain current (Q1)** 

_I_ D=f( _T_ C) 

parameter: _V_ GS≥10 V 

## **4 Drain current (Q2)** 

_I_ D=f( _T_ C) parameter: _V_ GS≥10 V 

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**----- Start of picture text -----**<br>
60 60<br>50 50<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0 40 80 120 160 0 40 80 120 160<br>T C [°C]  T C [°C]<br> [A]   [A]<br>I D I D<br>**----- End of picture text -----**<br>


Rev.2.1 

page 5 

2016-03-08 

## **5 Safe operating area (Q1)** 

_I_ D=f( _V_ DS); _T_ C=25 °C; _D_ =0 parameter: _t_ p 

## **6 Safe operating area (Q2)** 

_I_ D=f( _V_ DS); _T_ C=25 °C; _D_ =0 parameter: _t_ p 

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10 [3 ] 10 [3 ]<br>1 µs  1 µs<br>10 [2 ] 10 µs  10 [2 ] 10 µs<br>100 µs  100 µs<br>1 ms<br>1 ms<br>10 ms<br>10 [1 ] 10 [1 ]<br>10 ms<br>DC<br>DC<br>10 [0 ] 10 [0 ]<br>10 [-1 ] “y 10 [-1 ]<br>10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10<br>V DS [V]  V DS [V]<br>7 Max. transient thermal impedance (Q1) 8 Max. transient thermal impedance (Q2)<br>Z  thJC=f( t  p) Z  thJC=f( t  p)<br>parameter:  D  = t  p/ T parameter:  D  = t  p/ T<br>10 [1 ] 10 [1 ]<br>0.5  10 [0 ] 0.5<br>0.2  0.2<br>10 [0 ]<br>0.1<br>0.1<br>0.05<br>0.05  0.02<br>10 [-1 ]<br>0.02  0.01<br>single pulse<br>0.01<br>single pulse<br>10 [-1 ] 10 [-2 ]<br>10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10<br>t p [s]  t p [s]<br>[A]   [A]<br>I D I D<br> [K/W]   [K/W]<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br>


Rev.2.1 

page 6 

2016-03-08 

## **9 Typ. output characteristics (Q1)** 

_I_ D=f( _V_ DS); _T_ j=25 °C 

parameter: _V_ GS 

## **10 Typ. output characteristics (Q2)** 

_I_ D=f( _V_ DS); _T_ j=25 °C 

parameter: _V_ GS 

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160 400<br>10 V  4 V  10 V  3.5 V<br>3.3 V<br>4.5 V<br>4.5 V<br>4 V<br>120 300<br>3.5 V<br>3 V<br>80 200<br>2.8 V<br>3.3 V<br>40 100<br>3 V<br>2.8 V<br>0 0<br>0 1 2 3 0 1 2 3<br>V DS [V]  V DS [V]<br> [A]   [A]<br>I D I D<br>**----- End of picture text -----**<br>


## **11 Typ. drain-source on resistance (Q1)** 

_R_ DS(on)=f( _I_ D); _T_ j=25 °C parameter: _V_ GS 

## **12 Typ. drain-source on resistance (Q2)** 

_R_ DS(on)=f( _I_ D); _T_ j=25 °C parameter: _V_ GS 

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**----- Start of picture text -----**<br>
10 2<br>3 V<br>3.3 V<br>8<br>1.5<br>3.3 V<br>3.5 V<br>6 3.5 V<br>4 V<br>1 4.5 V<br>5 V<br>4 4 V<br>10 V<br>4.5 V<br>5 V<br>10 V  0.5<br>2<br>0 0<br>0 20 40 60 80 0 20 40 60 80<br>I D [A]  I D [A]<br>]  ]<br>W W<br> [m  [m<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


Rev.2.1 

page 7 

2016-03-08 

## **13 Typ. transfer characteristics (Q1)** 

_I_ D=f( _V_ GS); | _V_ DS |>2 | _I_ D| _R_ DS(on)max parameter: _T_ j 

## **14 Typ. transfer characteristics (Q2)** 

_I_ D=f( _V_ GS); _|V_ DS |>2 | _I_ D _| R_ DS(on)max parameter: _T_ j 

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**----- Start of picture text -----**<br>
160 400<br>120 | 300 |<br>80 200<br>40 100<br>150 °C  150 °C<br>25 °C<br>25 °C<br>)<br>0 0<br>0 1 2 3 4 0 1 2 3 4<br>WV) ll<br>V GS [V]  V GS [V]<br>15 Drain-source on-state resistance (Q1) 16 Drain-source on-state resistance (Q2)<br> DS(on)=f(=f( T  j); );  I  D=20 A; =20 A;  V  GS=10 V=10 V R  DS(on)=f( T  j);  I  D=20 A;  V  GS=10 V<br>7 2<br>6<br>1.5<br>5<br>4<br>1<br>3<br>typ<br>typ<br>2<br>0.5<br>1<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C]  T j [°C]<br> [A]   [A]<br>I D I D<br>]  ]<br>W W<br>[m  [m<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


## **15 Drain-source on-state resistance (Q1)** 

_R_ DS(on)=f(=f( _T_ j); ); _I_ D=20 A; =20 A; _V_ GS=10 V=10 V 

Rev.2.1 

page 8 

2016-03-08 

## **17 Typ. gate threshold voltage (Q1)** 

_V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=250 µA 

## **18 Typ. gate threshold voltage (Q2)** 

_V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=10 mA 

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**----- Start of picture text -----**<br>
2.8 2.8<br>2.4 2.4<br>2 2<br>1.6 1.6<br>1.2 1.2<br>0.8 0.8<br>0.4 0.4<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C]  T j [°C]<br> [V]   [V]<br>GS(th) GS(th)<br>V V<br>**----- End of picture text -----**<br>


## **19 Typ. capacitances (Q1)** 

_C_ =f( _V_ DS); _V_ GS=0 V; _f_ =1 MHz 

## **20 Typ. capacitances (Q2)** 

_C_ =f( _V_ DS); _V_ GS=0 V; _f_ =1 MHz 

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**----- Start of picture text -----**<br>
10 [4] 10 [4 ]<br>Ciss<br>Ciss<br>10 [3 ]<br>ee ) |<br>10 [3 ]<br>Coss<br>Coss<br>10 [2 ]<br>Crss  Crss<br>10 [2 ]<br>10 [1 ]<br>10 [0 ] 10 [1 ]<br>0 5 10 15 20 25 0 5 10 15 20 25<br>V DS [V]  V DS [V]<br> [pF]   [pF]<br>C C<br>**----- End of picture text -----**<br>


Rev.2.1 

page 9 

2016-03-08 

**BSG0810NDI** 

**21 Forward characteristics of reverse diode (Q1)** 

_I_ F=f( _V_ SD) 

## **22 Forward characteristics of reverse diode (Q2)** 

_I_ F=f( _V_ SD) 

**==> picture [483 x 668] intentionally omitted <==**

**----- Start of picture text -----**<br>
parameter:  T  j parameter:  T  j<br>10 [3 ] 10 [3 ]<br>10 [2 ] 10 [2 ]<br>150 °C  25 °C<br>10 [1 ] 10 [1 ]<br>10 [0 ] 10 [0 ]<br>-55 °C<br>25 °C<br>150 °C<br>10 [-1 ] 10 [-1 ]<br>100 °C<br>10 [-2 ] 10 [-2 ]<br>0 0.4 0.8 1.2 0 0.4 0.8 1.2<br>V SD [V]  V SD [V]<br>23 Avalanche characteristics (Q1) 24 Avalanche characteristics (Q2)<br>I  AS=f( t  AV);  R  GS=25 W I  AS=f( t  AV);  R  GS=25 W<br>parameter:  T  j(start) parameter:  T  j(start)<br>10 [2 ] 10 [2 ]<br>25 °C<br>125 °C  100 °C<br>10 [1 ] 25 °C  10 [1 ]<br>100 °C<br>125 °C<br>10 [0 ] 10 [0 ]<br>10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ] 10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ]<br>t AV [µs]  t AV [µs]<br>Rev.2.1 [_] page 10 2016-03-08<br> [A]   [A]<br>I F I F<br> [A]   [A]<br>I AV I AV<br>**----- End of picture text -----**<br>


Rev.2.1 

## **25 Typ. gate charge (Q1)** 

_V_ GS=f( _Q_ gate); _I_ D=20 A pulsed parameter: _V_ DD 

## **26 Typ. gate charge (Q2)** 

_V_ GS=f( _Q_ gate); _I_ D=20 A pulsed parameter: _V_ DD 

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**----- Start of picture text -----**<br>
10<br>8 VA<br>12 V<br>5 V<br>6 20 V<br>4<br>2<br>0 aaa<br>0 2 4 6 8 10 12 14<br>Q gate [nC]<br>27 Drain-source breakdown voltage (Q1)<br> BR(DSS)=f(=f( T  j); );  I  D=1 mA=1 mA I  DSS=f(<br>28<br>27<br>26<br>25<br>24<br>23<br>22<br>21<br>20 _<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>page 11<br> [V]   [V]<br>GS GS<br>V V<br> [V]<br> [A]<br>BR(DSS) I DSS<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10<br>8 VA<br>20 V<br>12 V<br>6 5 V<br>4<br>2<br>0 ae<br>0 10 20 30 40<br>Q gate [nC]<br> [V]<br>GS<br>V<br>**----- End of picture text -----**<br>


## **27 Drain-source breakdown voltage (Q1)** 

## **28 Typ. drain-source leakage current (Q2)** 

_I_ DSS=f( _V DS_ ); _V_ GS=0 V parameter: _T_ j 

_V_ BR(DSS)=f(=f( _T_ j); ); _I_ D=1 mA=1 mA 

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**----- Start of picture text -----**<br>
10 [-2 ]<br>125 °C<br>10 [-3 ]<br>100 °C<br>75 °C<br>10 [-4 ]<br>25 °C<br>10 [-5 ]<br>10 [-6 ] el<br>0 5 10 15 20<br>V DS [V]<br> [A]<br>I DSS<br>**----- End of picture text -----**<br>


Rev.2.1 

2016-03-08 

**BSG0810NDI** 

**Package Outline PG-TISON8-4** 

Rev.2.1 

page 12 

2016-03-08 

## **Boardpads & Apertures** 

## **PG-TISON8-4** 

**All the dimensions in mm** 

Rev.2.1 

page 13 

2016-03-08 

**BSG0810NDI** 

## BSG0810NDI 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2015-11-11|Release of final version|
|2.1|2016-03-24|Update package drawing|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

15 



## Links

- [View this product on Novapart](https://novapart.co/products/BSG0810NDIATMA1/dual-mosfet-n-channel-25-v-50-a-0003-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/bsg0810ndiatma1/mosfet-dual-n-ch-25v-50a-tison/dp/3703508)
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