# Silicon Carbide Schottky Diode, Dual Common Cathode, 650 V, 20 A, 14.5 nC, TO-247

![Product image](https://novapart.co/image/farnell:4266790/)

**URL**: https://novapart.co/products/BSDW20G65C2/silicon-carbide-schottky-diode-dual-common-cathode
**SKU**: BSDW20G65C2
**Manufacturer**: BOURNS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €3.0400
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (04-Feb-2026) |
| No. Of Pins | 3 Pin |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-247 |
| Diode Configuration | Dual Common Cathode |
| Average Forward Current | 20A |
| Total Capacitive Charge | 14.5nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4266790/)

## **Features** 

- High efficiency with low power loss 

- Low reverse leakage current 

- High peak forward surge current (IFSM) 

- Reduced EMI 

- Maximum operating TJ up to 175 °C 

- Epoxy compound is flame retardant to the UL 94V-0 standard 

## **Applications** 

   - Switched-Mode Power Supplies (SMPS) 

   - Power Factor Correction (PFC) 

   - PV inverters 

   - DC-DC converters 

   - Telecommunications 

   - Motor drives 

- RoHS compliant*, Pb free and halogen free** 

## BOURNS (is **BSDW20G65C2 Silicon Carbide Schottky Diode** 

## ~~**General Information**~~ 

Bourns[®] Model BSDW20G65C2 Silicon Carbide (SiC) Schottky Diode provides excellent current carrying capacity. This advanced, high efficiency power component is suitable for applications such as converters requiring a high peak forward surge capability, a very low forward voltage drop, reduced thermal resistance and low power loss. 

Bourns offers Silicon Carbide Schottky Diodes for rectification applications in assorted styles. The Model BSDW20G65C2 is available in a TO247-3 package, well-suited for high frequency Switched-Mode Power Supplies. 

## ~~**Additional Information**~~ 

Click these links for more information: 

PRODUCT TECHNICAL INVENTORY SAMPLES CONTACT 

SELECTOR LIBRARY 

~~**Absolute Maximum Ratings (@ T**~~ **J** ~~**= 25 °C Unless Otherwise Noted)**~~ 

~~CO~~ **Parameter Symbol BSDW20G65C2 Unit** ~~GO~~ Repetitive Peak Reverse Voltage VRRM 650 V Average Forward Current ~~es~~ (Square Wave Pulse, D = 0.5, Tmb ≤114 °C, dual diodes conducting, Fig. Zth ~~(~~ J-mb)) IF(AV) ~~es ee~~ 20 ~~ee~~ A Repetitive Peak Forward Current IFRM 20 A ~~es~~ (Square Wave Pulse, D = 0.5, Tmb ≤119 °C, tp = 25 μs, per diode, Fig. Zth(J-mb)) ~~es ee ee~~ Non-Repetitive Peak Forward Surge Current ~~ee~~ (10 ms, Single Sine-Wave Pulse) I ~~es~~ FSM ~~ee~~ 60 ~~ee~~ A ~~a~~ Total Power Dissipation (dual diodes conducting, per device) Ptot 157.8 W ~~a~~ Operating Junction Temperature Range TJ -55 to +175 °C ~~ef~~ Storage Temperature TSTG -55 to +175 °C 

## ~~**Thermal Characteristics**~~ 

|**Parameter**|**Parameter**|**Symbol**|**Condition or Model**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|Thermal<br>Resistance|Junction to Ambient|Rθ(J-A)|In ambient air||60||°C/W|
||Junction to Mounting Base|Rθ(J-mb)|Transient thermal impedance curves, per diode||1.37|1.75||
||||Transient thermal impedance curves, per device||0.75|0.95||



## ~~**Electrical Characteristics (@ T**~~ **J** ~~**= 25 °C Unless Otherwise Noted)**~~ 

|**Parameter**|**Symbol**|**Condition or Model**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Forward Voltage|VF|IF= 10 A, TJ= 25 °C, per diode<br>IF= 10 A, TJ= 175 °C, per diode||1.45<br>2.0|1.7<br>2.3|V|
|Reverse Leakage Current|IR|VR= 650 V, TJ= 25 °C, per diode<br>VR= 650 V, TJ= 175 °C, per diode||0.5<br>25|50<br>250|μA|
|Recovered Charge|Qr|dIF/dt = 500 A/μs, VR= 400 V, IF= 10 A, per diode||14.5||nC|
|Diode Capacitance|Cd|VR= 1 V, f = 1 MHz, per diode||328||pF|
|Capacitance Stored Energy|Ec|VR= 400 V||3.8||μJ|



## **WARNING  Cancer and Reproductive Harm -** www.P65Warnings.ca.gov 

*RoHS Directive 2015/863, Mar 31, 2015 and Annex. 

- ** Bourns considers a product to be “halogen free” if (a) the Bromine (Br) content is 900 ppm or less; (b) the Chlorine (Cl) content is 900 ppm or less; and (c) the total Bromine (Br) and Chlorine (Cl) content is 1500 ppm or less. 

Specifications are subject to change without notice. 

Users should verify actual device performance in their specific applications. 

The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BSDW20G65C2 Silicon Carbide Schottky Diode** 

## ~~**Rating and Characteristic Curves (T**~~ **J** ~~**= 25 °C unless otherwise noted)**~~ 

~~**Typical Forward Characteristics, per Diode**~~ 

**==> picture [230 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
16<br>TJ = -55 °C<br>T J  = 0 °C<br>TJ = 25 °C<br>12 T J  = 100 °C<br>TJ = 150 °C<br>T J  = 175 °C<br>8<br>4<br>0<br>0 0.5 1.0 1.5 2.0 2.5 3.0<br>Forward Voltage (V)<br>Forward Current (A)<br>**----- End of picture text -----**<br>


## ~~**Forward Power Dissipation, per Diode**~~ 

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**----- Start of picture text -----**<br>
40<br>D = 1<br>D = 0.5<br>32<br>D = 0.2<br>D = 0.1<br>24<br>16<br>8<br>0<br>0 3 6 9 12 15<br>Average Forward Current (A)<br>Total Power Dissipation (W)<br>**----- End of picture text -----**<br>


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Typical Reverse Characteristics, per Diode<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [2]<br>10<br>1<br>10 [-1]<br>10 [-2]<br>TJ = -55  ° C<br>10 [-3] TJ = 0 °C<br>TJ = 25 °C<br>10 [-4] TJ = 100 °C<br>TJ = 150 °C<br>TJ = 175  ° C<br>10 [-5]<br>150 250 350 450 550 650<br>Reverse Voltage (V)<br>Forward Current Derating, per Diode<br>90<br>D = 0.1<br>75<br>60 D = 0.2<br>45<br>D = 0.5<br>30<br>D = 1<br>15<br>0<br>25 75 125 175<br>Mounting Base Temperature (°C)<br>Reverse Leakage Current (µA)<br>Peak Forward Current (A)<br>**----- End of picture text -----**<br>


Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BSDW20G65C2 Silicon Carbide Schottky Diode** 

## ~~**Rating and Characteristic Curves (Continued)**~~ 

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**----- Start of picture text -----**<br>
Power Derating, per Diode<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
120<br>R th(J-mb)  typ.<br>Rth(J-mb) max.<br>100<br>80<br>60<br>40<br>20<br>0<br>25 50 75 100 125 150 175<br>Mounting Base Temperature (°C)<br>Total Power Dissipation (W)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Typical Recovered Charge vs V R , per Diode<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
15<br>10<br>5<br>0<br>0 100 200 300 400<br>Reverse Voltage (V)<br>Recovered Charge (nC)<br>**----- End of picture text -----**<br>


## ~~**Typical Diode Capacitance vs V**~~ **R** ~~**, per Diode**~~ 

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**----- Start of picture text -----**<br>
400<br>300<br>200<br>100<br>0 He<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3]<br>Reverse Voltage (V)<br>Diode Capacitance (pF)<br>**----- End of picture text -----**<br>


## ~~**Typical Capacitance Stored Energy vs V**~~ **R** ~~**, per Diode**~~ 

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**----- Start of picture text -----**<br>
10<br>8<br>6<br>4<br>2<br>Vr<br>Ec = ∫0  Cd(V)VdV<br>0<br>0 100 200 300 400 500 600<br>Reverse Voltage (V)<br>Capacitance Stored Energy (µJ)<br>**----- End of picture text -----**<br>


Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BSDW20G65C2 Silicon Carbide Schottky Diode** 

## ~~**Transient Thermal Impedance, Zth**~~ **(J-mb)** ~~**, per Diode**~~ 

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**----- Start of picture text -----**<br>
10<br>1<br>10 [-1]<br>P D = tp<br>T<br>D = 0.5<br>10 [-2]<br>D = 0.1<br>D = 0.05<br>D = 0.01 t p t<br>single pulse T<br>10 [-3]<br>10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>Transient Thermal Impedance (°C/W)<br>**----- End of picture text -----**<br>


Pulse Duration (s) 

## ~~**Product Dimensions**~~ 

Package Version: TO247N-3 

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**----- Start of picture text -----**<br>
15.70 - 15.90<br>(.618 - .626)<br>13.10 - 13.50<br>(.516 - .531)<br>4.70 - 5.20 7.40 DIA. 1.05 - 1.35<br>(.185 - .205) (.291) MAX. (.041 - .053)<br>2.40 - 2.60 1.90 - 2.10<br>(.094 - .102) (.075 - .083)<br>5.60 - 6.00<br>(.220 - .236)<br>6.05 - 6.25<br>4.80 - 5.20 3.50 - 3.70 (.238 - .246)<br>(.189 - .205) (.138 - .146)<br>20.90 - 21.10 DIA. 16.25 - 16.85<br>(.823 - .831) (.640 - .663)<br>2.20 - 2.60<br>(.087 - .102)<br>4.75<br>(.187)<br>MAX.<br>19.80 - 20.10<br>(.780 - .791) DIMENSIONS: MM<br>(INCHES)<br>5.45 1.80 - 2.20 0.50 - 0.70<br>(.215) [NOM.] (.071 - .087) (.020 - .028)<br>2.80 - 3.20 1.00 - 1.40<br>(.110 - .126) (.039 - .055)<br>**----- End of picture text -----**<br>


Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BSDW20G65C2 Silicon Carbide Schottky Diode** 

## ~~**Typical Part Marking**~~ 

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**----- Start of picture text -----**<br>
MANUFACTURER’S<br>TRADEMARK<br>DEVICE CODE<br>SDW20G<br>65C2<br>***YYWW***<br>XXXX<br>LOT ID DATE CODE<br>1ST~3RD CHARACTERS INDICATE<br>INTERNAL PRODUCTION CODE<br>4TH~5TH CHARACTERS INDICATE<br>YEAR<br>6TH~7TH CHARACTERS INDICATE<br>WEEK<br>8TH~10TH CHARACTERS INDICATE<br>INTERNAL SERIAL NO.<br>**----- End of picture text -----**<br>


## ~~**Environmental Specifications**~~ 

ESD Classification (HBM)...............................................................3B 

## ~~**How to Order**~~ 

## **B  SD  W  20  G  65  C  2** 

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**----- Start of picture text -----**<br>
Manufacturer<br>B = Bourns<br>Product Type<br>SD = SiC Diodes<br>Package Code<br>W = TO247-3<br>Current Rating<br>20 = 20 A<br>Device Type<br>G = General VF<br>Nominal Voltage<br>65 = 650 V<br>Configuration<br>C = Common Cathode<br>Version Number<br>**----- End of picture text -----**<br>


**Asia-Pacific:** Tel: +886-2 2562-4117 Email: asiacus@bourns.com **EMEA:** Tel: +36 88 885 877 Email: eurocus@bourns.com **The Americas:** Tel: +1-951 781-5500 Email: americus@bourns.com **www.bourns.com** 

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Pin Information<br>MOUNTING BASE (mb)<br>1 2 3<br>Anode<br>1<br>Cathode<br>2 mb<br>Anode<br>3<br>**----- End of picture text -----**<br>


## ~~**Packaging Specifications**~~ 

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30 pcs./tube<br>0.75<br>(.030)<br>LENGTH<br>533.5 46<br>(21.004) (1.811)<br>MM<br>DIMENSIONS:<br>(INCHES)<br>7.7<br>(.303)<br>**----- End of picture text -----**<br>


## REV. 08/23 

Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

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