# Power MOSFET, N Channel, 25 V, 82 A, 2600 µohm, TDSON, Surface Mount

![Product image](https://novapart.co/image/farnell:2781052/)

**URL**: https://novapart.co/products/BSC026NE2LS5ATMA1/power-mosfet-n-channel-25-v-82-a-2600-ohm-tdson
**SKU**: BSC026NE2LS5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3930
**Stock**: 500+
**Lead Time**: 358 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:82A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 5 |
| Qualification | - |
| Power Dissipation | 29W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TDSON |
| Drain Source Voltage Vds | 25V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 82A |
| Drain Source On State Resistance | 2600µohm |
| Gate Source Threshold Voltage Max | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781052/)

## MOSFET 

**OptiMOS[TM]** OptiMOS[TM] 5 BSC026NE2LS5 

Final 

## 5 Power-MOSFET, BSC026NE2LS5 25 V 

## **OptiMOS[TM]** 

## **Features** 

¢ Optimized for high performance buck converters _R_ DS(on) _V_ GS 

1) 

|**Parameter**<br>~~Table~~<br>~~1~~<br>~~Key~~<br>~~Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|25|V|
|_R_DS(on),max|2.6|mΩ|
|_I_D|82|A|
|_Q_OSS|7.6|nC|
|_Q_G(0V..4.5V)|5.6|nC|



**==> picture [151 x 218] intentionally omitted <==**

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||**Package**|**Marking**||
|---|---|---|---|
|BSC026NE2LS5|PG-TDSON-8|26NE2LS5|-|



1) J-STD20 and JESD22 

Final Data Sheet 

2 

**OptiMOS[TM] 5�Power-MOSFET,�25�V** 

BSC026NE2LS5 

**==> picture [146 x 65] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 

Final Data Sheet 

3 

Rev.�2.0,��2015-03-10 

**OptiMOS[TM] 5�Power-MOSFET,�25�V** 

BSC026NE2LS5 

**==> picture [146 x 65] intentionally omitted <==**

**2�����Maximum�ratings** at� _T_ j�=�25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|82<br>52<br>66<br>42<br>24|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50K/W1)|
|Pulsed drain current2)|_I_D,pulse|-|-|328|A|_T_C=25°C|
|Avalanche current, single pulse3)|_I_AS|-|-|35|A|_T_C=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|14|mJ|_I_D=35A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-16|-|16|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|29<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|



## **3�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|4.3|K/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-|
|Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|50|K/W|-|



> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 2) See figure 3 for more detailed information 

> 3) See figure 13 for more detailed information 

Final Data Sheet 

Rev.�2.0,��2015-03-10 

4 

**OptiMOS[TM] 5�Power-MOSFET,�25�V** 

BSC026NE2LS5 

**==> picture [146 x 65] intentionally omitted <==**

## **4�����Electrical�characteristics** 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|25|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.2|1.6|2|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=20V,_V_GS=0V,_T_j=25°C<br>_V_DS=20V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=16V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|3.0<br>2.2|4.0<br>2.6|mΩ|_V_GS=4.5V,_I_D=30A<br>_V_GS=10V,_I_D=30A|
|Gate resistance|_R_G|-|0.7|1.2|Ω|-|
|Transconductance|_g_fs|55|110|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=30A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|780|1100|pF|_V_GS=0V,_V_DS=12V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|390|530|pF|_V_GS=0V,_V_DS=12V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|38|-|pF|_V_GS=0V,_V_DS=12V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|3|-|ns|_V_DD=12V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|3|-|ns|_V_DD=12V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|13|-|ns|_V_DD=12V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|2|-|ns|_V_DD=12V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|2.0|-|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate charge at threshold|_Q_g(th)|-|1.2|-|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate to drain charge|_Q_gd|-|1.4|-|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Switchingcharge|_Q_sw|-|2.2|-|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate charge total|_Q_g|-|5.6|7.8|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate plateau voltage|_V_plateau|-|2.6|-|V|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate charge total|_Q_g|-|12|16|nC|_V_DD=12V,_I_D=30A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|4.8|-|nC|_V_DS=0.1V,_V_GS=0to4.5V|
|Output charge|_Q_oss|-|7.6|-|nC|_V_DD=12V,_V_GS=0V|



- 1) Defined by design. Not subject to production test 

> 2) See ″ Gate charge waveforms ″ for parameter definition 

Final Data Sheet 

Rev.�2.0,��2015-03-10 

5 

BSC026NE2LS5 

**==> picture [146 x 65] intentionally omitted <==**

## **OptiMOS[TM] 5�Power-MOSFET,�25�V** 

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|29|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|328|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.84|1|V|_V_GS=0V,_I_F=30A,_T_j=25°C|
|Reverse recoverycharge|_Q_rr|-|7|-|nC|_V_R=12V,_I_F=_I_S,d_i_F/d_t_=400A/µs|



Final Data Sheet 

6 

Rev.�2.0,��2015-03-10 

**OptiMOS[TM]** 5 Power-MOSFET, BSC026NE2LS5 25 V 

**==> picture [538 x 272] intentionally omitted <==**

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Final Data Sheet 

7 

5 Power-MOSFET, BSC026NE2LS5 25 V 

## **OptiMOS[TM]** 

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**----- Start of picture text -----**<br>
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Final Data Sheet 

8 

5 Power-MOSFET, 25 V BSC026NE2LS5 

## **OptiMOS[TM]** 

**==> picture [528 x 266] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 ee 2.5 | [| f ~ f fT f ft of ft ft<br>PetEEEEEEEEEEE| fT | Et | EREEREEREEEEes<br>4 2.0<br>EERE EEEEE | BEER RRR REEE<br>ee PASE<br>250 µA<br>3 1.5<br>a _ SARE—<br>a ra pif of ff fy Psst tt<br>= P| ft ft tT ff<br>typ<br>2 1.0<br>STO EET ee ee<br>ee aa a eeeee<br>Pet | tt es ee se<br>1 0.5<br>EERREEEEEERSa ee ee  | SERREeeRRReee<br>Pet P| [ | fF ft fy yt ft fy<br>0 pt | fT| | Et| | | | tT | 0.0 esa<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j Pc] T j Pc]<br>R DS(on)=f( T j ); I D =30A; V GS =10V V GS(th)=f( T j ); V GS= V DS ; I D =250 yA<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>**----- End of picture text -----**<br>


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10 [4] 10 [3]<br>| LI 25 °C a |<br>; | | | | TT TT tT yt yt tT tT eT TT | 150 °C EE ee<br>pepe a _—==pe -----————<br>BRR oi tt<br>PLETE TET TET EEE EEE pt tte et tT tT eet<br>Ciss<br>10 [3] NUT) 10 [2] LE er<br>SE Pf<br>Coss<br>= EEC CCCPPRSEEEE Soccer _ A<br>2 PLT TTT yt | Pree | =x a2<br>STITT Pi tT tT tT TA ye TT<br>10 [2] PNET) 10 [1] JALAL<br>Crss<br>SS LE<br>| [| [| TT TNT TT TT tT TT tT -_a >} AS+ —} — +| +CN CO4 |<br>Pt ty tp PNA a A RG A CR GO GG |<br>i 2<br>PEPE FEC CHOP<br>10 [1] 10 [0]<br>0 CCRT 5 10 15 20 25 | EECA 0.0 0.5 1.0 1.5<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

## **OptiMOS[TM]** 5 Power-MOSFET, BSC026NE2LS5 25 V 

**==> picture [526 x 266] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [2] 12<br>12 V<br>ee 10 L<br>5 V<br>25 °C 20 V<br>10 [1] SO S 8 Seanennnny ae<br>NI N| yr<br>100 °C<br>6<br>x ee eee Uf<br>125 °C<br>10 [0] it SH 4 TTT ET Bry yy yd<br>LIN) E/ A<br>Lt TTT TT ETT 2 f\<br>| VI TTT Ty<br>COI PLT<br>10 [-1] 0<br>10 [0] 10 [1] Ce 10 [2] PPT) 10 [3] | ZEEE 0 4 8 12 16<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>I AV V GS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
TT Gate charge waveforms<br>**----- End of picture text -----**<br>


**==> picture [259 x 265] intentionally omitted <==**

**----- Start of picture text -----**<br>
28 Pt | tT | tT | tT | |<br>27 Pt | tT Et<br>P| | | tT | | | |<br>26 P| | tT | | | ee<br>| | | | | cP Tt<br>25 Pot | |ee<br>-a ~-L_ELeTTT Tt tt<br>el<br>24 iT | | tT ET<br>23 Pt tT | tT ETT Tt<br>Pt | tT | tT | tT | Tt<br>22 Pt | tT | tT | tT | Tt<br>Pt | | te |<br>21<br>Pt tT | tT ETT Tt<br>Pt | tT | tT | tT | Tt<br>20<br>a<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

10 

5 Power-MOSFET, BSC026NE2LS5 25 V 

**OptiMOS[TM]** 

Final Data Sheet 

11 

**OptiMOS[TM]** 

5 Power-MOSFET, BSC026NE2LS5 25 V 

**==> picture [69 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
Dimension in mm<br>**----- End of picture text -----**<br>


Final Data Sheet 

12 

5 Power-MOSFET, BSC026NE2LS5 25 V 

## **OptiMOS[TM]** 

BSC026NE2LS5 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2015-03-10|Release of final version|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

13 



## Links

- [View this product on Novapart](https://novapart.co/products/BSC026NE2LS5ATMA1/power-mosfet-n-channel-25-v-82-a-2600-ohm-tdson)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/bsc026ne2ls5atma1/mosfet-n-ch-25v-82a-tdson/dp/2781052)
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