# Power MOSFET, N Channel, 25 V, 100 A, 2000 µohm, TDSON, Surface Mount

![Product image](https://novapart.co/image/farnell:2480709/)

**URL**: https://novapart.co/products/BSC024NE2LSATMA1/power-mosfet-n-channel-25-v-100-a-2000-ohm-tdson
**SKU**: BSC024NE2LSATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2600
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 48W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TDSON |
| Drain Source Voltage Vds | 25V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 2000µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2480709/)

## n-Channel Power MOSFET 

OptiMOS™ BSC024NE2LS 

## Data Sheet 

2.1, 2011-09-20 Final 

Industrial & Multimarket 

**OptiMOS™ Power-MOSFET BSC024NE2LS** 

## **1 Description** 

OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS™ products are available in high performancepackages to tackle your most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. 

## **Features** 

- Optimized for high performance buck converters 

- 100% avalanche tested 

- Very low on-resistance RDS(on) @ VGS=4.5 V 

- N-channel 

- Qualified according to JEDEC[1)] for target applications 

- Superior thermal resistance 

- Pb-free plating; RoHS compliant 

- Halogen-free according to IEC61249-2-21 

## **Applications** 

- On board power for server 

- Power managment for high performance computing 

- Synchronous rectification 

- High power density point of load converters 

**Table 1 Key Performance Parameters** 

**Parameter Value Unit Related Links** ~~oo YL ee~~ _V_ DS 25 V IFX OptiMOS webpage ~~ee~~ RDS(on),max 2.4 mΩ IFX OptiMOS product brief ~~ee~~ _I_ D 100 A IFX OptiMOS spice models QOSS 13 nC IFX Design tools Q ~~es~~ g.typ 23 ~~rs rr ——~~ **Type Package Marking** BSC024NE2LS PG-TDSON-8 024NE2LS 

1) J-STD20 and JESD22 

Final Data Sheet 

1 

2.1, 2011-09-20 

**OptiMOS™ Power-MOSFET BSC024NE2LS** 

**==> picture [131 x 63] intentionally omitted <==**

## **2 Maximum ratings** 

at _T_ j = 25 °C, unless otherwise specified. 

## **Table 2 Maximum ratings** 

|**Table 2**<br>**Maximum ratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note / Test Condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-|-|100|A|_V_GS=10 V,_T_C=25 °C|
|||-|-|70||_V_GS=10 V,_T_C=100 °C|
|||-|-|93||_V_GS=4.5 V,_T_C=25 °C|
|||-|-|59||_V_GS=4.5 V,_T_C=100 °C|
|||-|-|25||_V_GS=10 V,_T_A=25 °C,<br>_R_thJA=50 K/W1))|
|Pulsed drain current2)|_I_D,pulse|-|-|400||_T_C=25 °C|
|Avalanche current, single pulse3)|_I_AS|-|-|50|||
|Avalanche energy, single pulse|_E_AS|-|-|40|mJ|_I_D=40 A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V||
|Power dissipation|_P_tot|-|-|48|W|_T_C=25 °C|
|||-|-|2.5||_T_A=25 °C,_R_thJA=50 K/W1))|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C||
|IEC climatic category; DIN IEC 68-1||55/150/56|||||



1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm[2] (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

2) See figure 3 for more detailed information 

- 3) See figure 13 for more detailed information 

## **3 Thermal characteristics** 

## **Table 3 Thermal characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case|_R_thJC|-|-|2.6|K/W||
|||-|-|20||top|
|Device on PCB|_R_thJA|-|-|50||6 cm2cooling area1)|



1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm[2] (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air 

Final Data Sheet 

2 

2.1, 2011-09-20 

**OptiMOS™ Power-MOSFET BSC024NE2LS** 

**==> picture [131 x 63] intentionally omitted <==**

**Electrical characteristics** 

## **4 Electrical characteristics** 

Electrical characteristics, at _T_ j=25 °C, unless otherwise specified. 

## **Table 4 Static characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|25|-|-|V|_V_GS=0 V,_I_D=1 mA|
|Gate threshold voltage|_V_GS(th)|1.2|-|2||_V_DS=_V_GS,_I_D=250 µA|
|Zero gate voltage drain current|_I_DSS|-|0.1|1|µA|_V_DS=25 V,_V_GS=0 V,<br>_T_j=25 °C|
|||-|10|100||_V_DS=25 V,_V_GS=0 V,<br>_T_j=125 °C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0 V|
|Drain-source on-state resistance|_R_DS(on)|-|2.7|3.4|mΩ|_V_GS=4.5 V,_I_D=30A,|
|||-|2|2.4||_V_GS=10 V,_I_D=30 A,|
|Gate resistance|_R_G|-|0.9|-|Ω||
|Transconductance|_g_fs|55|110|-|S||_V_DS|>2|_I_D|RDS(on)max,<br>_I_D=30 A|



## **Table 5 Dynamic characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|1700|-|pF|_V_GS=0 V,_V_DS=12 V,<br>_f_=1 MHz|
|Output capacitance|_C_oss|-|650|-|||
|Reverse transfer capacitance|_C_rss|-|71|-|||
|Turn-on delay time|_t_d(on)|-|4.1|-|ns|_V_DD=12 V,_V_GS=10V,<br>_I_D=30 A,_R_G= 1.6Ω|
|Rise time|_t_r|-|3.6|-|||
|Turn-off delay time|_t_d(off)|-|19|-|||
|Fall time|_t_f|-|2.6|-|||



Final Data Sheet 

3 

2.1, 2011-09-20 

**OptiMOS™ Power-MOSFET BSC024NE2LS** 

**==> picture [131 x 63] intentionally omitted <==**

**Electrical characteristics** 

## **Table 6 Gate charge characteristics[1)]** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|4.4|-|nC|_V_DD=12 V,<br>_I_D=30 A,<br>_V_GS=0 to 4.5 V|
|Gate charge at threshold|_Q_g(th)|-|2.7|-|||
|Gate to drain charge|_Q_gd|-|2.6|-|||
|Switching charge|_Q_sw|-|4.3|-|||
|Gate charge total|_Q_g|-|11|-|||
|Gate plateau voltage|_V_plateau|-|2.6|-|V||
|Gate charge total|_Q_g|-|23|-|nC|_V_DD=12 V,<br>_I_D=30 A,<br>_V_GS=0 to 10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|10|-||_V_DS=0.1 V,<br>_V_GS=0 to 4.5 V|
|Output charge|_Q_oss|-|13|-||_V_DD=12 V,_V_GS=0 V|



1) See figure 16 for gate charge parameter definition 

## **Table 7 Reverse diode characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_s|-|-|48|A|_T_C=25 °C|
|Diode pulse current|_I_S,pulse|-|-|192|||
|Diode forward voltage|_V_SD|-|0.85|1|V|_V_GS=0 V,_I_F=30 A,<br>_T_j=25 °C|
|Reverse recovery charge|_Q_rr|-|15|-|nC|_V_R=15 V,_I_F=_I_s,<br>d_I_F/d_t_=400 A/µs|



Final Data Sheet 

4 

2.1, 2011-09-20 

**OptiMOS™ Power-MOSFET BSC024NE2LS** 

**5 Electrical characteristics diagrams** 

## **Electrical characteristics diagrams** 

## **Table 8** 

## **1 Power dissipation** 

_P_ tot = f( _T_ C) 

## **2 Drain current** 

_ID=f(TC);_ parameter _:V_ GS 

**Table 9** 

## **3 Safe operating area** _**T**_ **C=25 °C** 

**==> picture [178 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
I D=f( V DS);  T j=25 °C; D=0; parameter:  T p<br>**----- End of picture text -----**<br>


**==> picture [178 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
 4 Max. transient thermal impedance<br>10°<br>— 0.2 /<br>= 0.1<br>3 iff<br>N 10" 0.02 Y 4<br>0.01<br>:<br>single pulse<br>107<br>10 10° 10% 10° 107<br>ty Is]<br> Z (thJC)=f( t p); parameter: D= t p/ T<br>**----- End of picture text -----**<br>


Final Data Sheet 

2.1, 2011-09-20 

5 

**OptiMOS™ Power-MOSFET BSC024NE2LS** 

**Electrical characteristics diagrams** 

**Table 10** 

## **5 Typ. output characteristics** _**T**_ **C=25 °C 6 Typ. drain-source on-state resistance** 

_I_ D=f( _V_ DS); _T_ j=25 °C; parameter: _V_ GS 

_R_ DS(on)=f( _I_ D); _T_ j=25 °C; parameter: _V_ GS 

**Table 11** 

## **7 Typ. transfer characteristics** 

## **8 Typ. forward transconductance** 

_I_ D=f(VGS); | _V_ DS|>2| _I_ D| _R_ DS(on)max 

**==> picture [81 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
 g fs=f( I D);  Tj =25 °C<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

2.1, 2011-09-20 

**OptiMOS™ Power-MOSFET BSC024NE2LS** 

## **Electrical characteristics diagrams** 

## **Table 12** 

## **9 Drain-source on-state resistance** 

RDS(on)=f( _T_ j); _I_ D=30 A; _V_ GS=10 V 

## **10 Typ. gate threshold voltage** 

**==> picture [148 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GS(th)=f( T j);  V GS= V DS;  I D=250 µA<br>**----- End of picture text -----**<br>


**Table 13** 

## **11 Typ. capacitances 12 Forward characteristics of reverse diode** 

C=f( _V_ DS); _V_ GS=0 V; _f_ =1 MHz _I_ F=f( _V_ SD); parameter: _T_ j 

Final Data Sheet 

2.1, 2011-09-20 

7 

**OptiMOS™ Power-MOSFET BSC024NE2LS** 

**Electrical characteristics diagrams** 

**Table 14** 

**==> picture [141 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
13 Avalanche characteristics<br>**----- End of picture text -----**<br>


_I_ AS=f( _t_ AV); _R_ GS=25 Ω; parameter: _T_ j(start) 

## **14 Typ. gate charge** 

_V_ GS=f( _Q_ gate); _I_ D=30 A pulsed; parameter: _V_ DD 

## **Table 15** 

## **15 Drain-source breakdown voltage** 

## **16 Gate charge waveforms** 

**==> picture [104 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
 V BR(DSS)=f( T j);  I D=1 mA<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

2.1, 2011-09-20 

**OptiMOS™ Power-MOSFET BSC024NE2LS** 

**6** 

**Package outline** 

## **Package outline** 

**Figure 1 Outlines PG-TDSON-8, dimensions in mm/inches** 

Final Data Sheet 

9 

2.1, 2011-09-20 

**OptiMOS™ Power-MOSFET BSC024NE2LS** 

## **Package outline** 

**Figure 2 Outlines PG-TDSON-8 tape, dimension in mm/inches** 

Final Data Sheet 

10 

2.1, 2011-09-20 

**OptiMOS™ Power-MOSFET BSC024NE2LS** 

## **Revision History** 

## **7 Revision History** 

## **Revision History: 2011-09-20, 2.1** 

## **Previous Revision:** 

|**Revision**||**Subjects (major changes since last revision)**|
|---|---|---|
|0.2|Release of Target data sheet||
|1.0|Release of Preliminary Data Sheet||
|2.0|Release of Final data sheet||
|2.1||Update VGS(th)|



## **We Listen to Your Comments** 

Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: **erratum@infineon.com** 

Edition 2011-09-20 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Final Data Sheet 

11 

2.1, 2011-09-20 



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