# Power MOSFET, N Channel, 60 V, 100 A, 1450 µohm, TDSON, Surface Mount

![Product image](https://novapart.co/image/farnell:2986392/)

**URL**: https://novapart.co/products/BSC014N06NSTATMA1/power-mosfet-n-channel-60-v-100-a-1450-ohm-tdson
**SKU**: BSC014N06NSTATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.2300
**Stock**: 1000+
**Lead Time**: 358 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS |
| Qualification | - |
| Power Dissipation | 188W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TDSON |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 1450µohm |
| Gate Source Threshold Voltage Max | 2.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2986392/)

**BSC014N06NST** 

## **MOSFET** 

## **OptiMOS[TM]** 

## **Features** 

1) 

|**Parameter**<br>~~1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|60|V|
|_R_DS(on),max|1.45|mΩ|
|_I_D|100|A|
|_Q_OSS|100|nC|
|_Q_G(0V..10V)|89|nC|



**==> picture [143 x 204] intentionally omitted <==**

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|~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links|
|---|---|---|---|
|BSC014N06NST<br>~~Type/OrderingCode |~~|TDSON-8 FL<br>~~|~~|014N06NT<br>|-<br>|



1) J-STD20 and JESD22 

Final Data Sheet 

1 

**OptiMOS[TM] �Power-Transistor,�60�V BSC014N06NST** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 

Final Data Sheet 

2 

Rev.�2.0,��2017-03-01 

**OptiMOS[TM] �Power-Transistor,�60�V BSC014N06NST** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|100<br>100<br>31|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_C=25°C,_R_thJA=50K/W1)|
|Pulsed drain current2)|_ID,pulse_|-|-|400|A|_T_C=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|580|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|188<br>3.0|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W1)|
|Operatingand storage temperature|_T_j,_T_stg|-55|-|175|°C|-|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.5|0.8|K/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-|
|Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|50|K/W|-|



> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 2) See Diagram 3 for more detailed information 

> 3) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.0,��2017-03-01 

**OptiMOS[TM] �Power-Transistor,�60�V BSC014N06NST** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|60|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.1|2.8|3.3|V|_V_DS=_V_GS,_I_D=120µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.5<br>10|1<br>100|µA|_V_DS=60V,_V_GS=0V,_T_j=25°C<br>_V_DS=60V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|1.2<br>1.6|1.45<br>2.2|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=6V,_I_D=12.5A|
|Gate resistance1)|_R_G|-|2|3|Ω|-|
|Transconductance|_g_fs|75|150|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=50A|



## **Table�5�����Dynamic�characteristics[1)]** 

|**Table5Dynamiccharacterist**|**ics1)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|6500|8125|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Output capacitance|_C_oss|-|1500|1875|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|59|118|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|23|-|ns|_V_DD=30V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=2Ω|
|Rise time|_t_r|-|10|-|ns|_V_DD=30V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=2Ω|
|Turn-off delay time|_t_d(off)|-|43|-|ns|_V_DD=30V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=2Ω|
|Fall time|_t_f|-|11|-|ns|_V_DD=30V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=2Ω|
|**Table6Gatechargecharacteristics2)**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|28|-|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|18|-|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|16|21|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|26|-|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|89|104|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.3|-|V|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|78|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|100|125|nC|_V_DD=30V,_V_GS=0V|



> 1) Defined by design. Not subject to production test 

> 2) See ″ Gate charge waveforms ″ for parameter definition 

Final Data Sheet 

Rev.�2.0,��2017-03-01 

4 

**OptiMOS[TM] �Power-Transistor,�60�V BSC014N06NST** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|100|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|400|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.84|1.2|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|52|83|ns|_V_R=30V,_I_F=50A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge|_Q_rr|-|139|-|nC|_V_R=30V,_I_F=50A,d_i_F/d_t_=100A/µs|



1) Defined by design. Not subject to production test Final Data Sheet 

Rev.�2.0,��2017-03-01 

5 

**OptiMOS[TM] BSC014N06NST** 

**==> picture [539 x 284] intentionally omitted <==**

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Final Data Sheet 

6 

**OptiMOS[TM] BSC014N06NST** 

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**----- Start of picture text -----**<br>
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Final Data Sheet 

7 

**OptiMOS[TM] BSC014N06NST** 

**==> picture [528 x 282] intentionally omitted <==**

**----- Start of picture text -----**<br>
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Final Data Sheet 

8 

**OptiMOS[TM] BSC014N06NST** 

**==> picture [528 x 634] intentionally omitted <==**

**----- Start of picture text -----**<br>
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TT Gate charge waveforms 

Final Data Sheet 

9 

**OptiMOS[TM] BSC014N06NST** 

Final Data Sheet 

10 

**OptiMOS[TM] BSC014N06NST** 

Final Data Sheet 

11 

**OptiMOS[TM] BSC014N06NST** 

Final Data Sheet 

12 

**OptiMOS[TM] BSC014N06NST** 

## BSC014N06NST 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2017-03-01|Release of final version|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

13 



## Links

- [View this product on Novapart](https://novapart.co/products/BSC014N06NSTATMA1/power-mosfet-n-channel-60-v-100-a-1450-ohm-tdson)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/bsc014n06nstatma1/mosfet-n-ch-60v-100a-188w-tdson/dp/2986392)
---

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