# Power MOSFET, N Channel, 40 V, 100 A, 1400 µohm, TDSON, Surface Mount

![Product image](https://novapart.co/image/farnell:2450402/)

**URL**: https://novapart.co/products/BSC014N04LSATMA1/power-mosfet-n-channel-40-v-100-a-1400-ohm-tdson
**SKU**: BSC014N04LSATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5260
**Stock**: 1000+
**Lead Time**: 358 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TDSON |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 1400µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2450402/)

**BSC014N04LS** 

## **MOSFET OptiMOS[TM]** 

## **Features** 

* Optimized for synchronous rectification 

_R_ DS(on) 

1) 

|**Parameter**<br>~~1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|40|V|
|_R_DS(on),max|1.4|mΩ|
|_I_D|100|A|
|_Q_oss|54|nC|
|_Q_g(0V..10V)|61|nC|



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|~~Type/OrderingCode|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~|
|---|---|---|---|
|BSC014N04LS<br>~~Type/OrderingCode |~~|TDSON-8 FL<br>~~|~~<br>~~|~~|014N04LS|-<br>~~Related Links~~|



1) J-STD20 and JESD22 

Final Data Sheet 

1 

**OptiMOS[TM] �Power-MOSFET,�40�V BSC014N04LS** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 

Final Data Sheet 

2 

Rev.�2.6,��2020-02-07 

**OptiMOS[TM] �Power-MOSFET,�40�V BSC014N04LS** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|100<br>100<br>100<br>100<br>32|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50K/W1)|
|Pulsed drain current2)|_I_D,pulse|-|-|400|A|_T_C=25°C|
|Avalanche current, single pulse3)|_I_AS|-|-|50|A|_T_C=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|170|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|96<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.8|1.3|K/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-|
|Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|50|K/W|-|



> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 2) See Diagram 3 for more detailed information 

> 3) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.6,��2020-02-07 

**OptiMOS[TM] �Power-MOSFET,�40�V BSC014N04LS** 

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## **3�����Electrical�characteristics** 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.2|-|2|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|1.5<br>1.1|1.9<br>1.4|mΩ|_V_GS=4.5V,_I_D=50A<br>_V_GS=10V,_I_D=50A|
|Gate resistance1)|_R_G|0.45|0.9|1.8|Ω|-|
|Transconductance|_g_fs|120|230|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=50A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|4300|6020|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|1200|1680|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|100|200|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|8|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext,ext=1.6Ω|
|Rise time|_t_r|-|9|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|35|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext,ext=1.6Ω|
|Fall time|_t_f|-|7|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext,ext=1.6Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|11|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|6.9|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|9.8|14|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|14|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|61|85|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|2.5|-|V|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|31|44|nC|_V_DD=20V,_I_D=50A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|24|-|nC|_V_DS=0.1V,_V_GS=0to4.5V|
|Output charge1)|_Q_oss|-|54|76|nC|_V_DD=20V,_V_GS=0V|



> 1) Defined by design. Not subject to production test 

> 2) See ″ Gate charge waveforms ″ for parameter definition 

Final Data Sheet 

Rev.�2.6,��2020-02-07 

4 

**OptiMOS[TM] �Power-MOSFET,�40�V BSC014N04LS** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|96|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|400|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.82|1|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|32|64|ns|_V_R=20V,_I_F=50A,d_i_F/d_t_=400A/µs|
|Reverse recoverycharge|_Q_rr|-|44|-|nC|_V_R=20V,_I_F=50A,d_i_F/d_t_=400A/µs|



1) Defined by design. Not subject to production test Final Data Sheet 

Rev.�2.6,��2020-02-07 

5 

**OptiMOS[TM] BSC014N04LS** 

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Final Data Sheet 

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**OptiMOS[TM] BSC014N04LS** 

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Final Data Sheet 

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**OptiMOS[TM] BSC014N04LS** 

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Final Data Sheet 

8 

**OptiMOS[TM] BSC014N04LS** 

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Final Data Sheet 

9 

**OptiMOS[TM] �Power-MOSFET,�40�V BSC014N04LS** 

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## **5�����Package�Outlines** 

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DOCUMENT NO.<br>Z8B000193699<br>REVISION<br>03<br>MILLIMETERS<br>DIMENSION<br>MIN. MAX. SCALE 10:1<br>A 0.90 1.20<br>A1 0.15 0.35 0 1 2 3mm<br>b 0.26 0.54<br>D 4.80 5.35<br>D1 3.70 4.40 EUROPEAN PROJECTION<br>D2 0.02 0.23<br>E 5.70 6.10<br>E1 5.90 6.42<br>E2 3.88 4.42<br>e 1.27<br>L 0.69 0.90 ISSUE DATE<br>M 0.45 0.69 19.06.2019<br>**----- End of picture text -----**<br>


## **Figure�1�����Outline�TDSON-8�FL,�dimensions�in�mm** 

Final Data Sheet 

10 

Rev.�2.6,��2020-02-07 

**OptiMOS[TM] �Power-MOSFET,�40�V BSC014N04LS** 

**==> picture [120 x 53] intentionally omitted <==**

## PG-TDSON-8­FL: Recommended Boardpads & Apertures 

**==> picture [478 x 270] intentionally omitted <==**

## Figure 2     Outline Boardpads (TDSON-8 FL) 

Final Data Sheet 

11 

Rev.�2.6,��2020-02-07 

OptiMOS[TM] Power-MOSFET , 40 V BSC014N04LS 

Figure 3     Outline Tape (TDSON-8 FL ) 

Rev. 2.6,  2020-02-07 

Final Data Sheet 

12 

OptiMOS[TM] Power-MOSFET , 40 V BSC014N04LS 

**==> picture [120 x 53] intentionally omitted <==**

## Revision History 

## BSC014N04LS 

## Revision: 2020-02-07, Rev. 2.6 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2012-10-11|Release of final version|
|2.1|2012-10-12|New diagram titles.|
|2.2|2013-02-27|Rev. 2.1|
|2.4|2016-05-04|Update footnotes and insert max values|
|2.5|2017-03-27|Update Qrr|
|2.6|2020-02-07|Update package drawings|



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## Published by 

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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Rev. 2.6,  2020-02-07 

Final Data Sheet 

13 



## Links

- [View this product on Novapart](https://novapart.co/products/BSC014N04LSATMA1/power-mosfet-n-channel-40-v-100-a-1400-ohm-tdson)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/bsc014n04lsatma1/mosfet-n-ch-40v-0-1a-tdson-8/dp/2450402)
---

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