# Power MOSFET, N Channel, 25 V, 479 A, 400 µohm, TDSON, Surface Mount

![Product image](https://novapart.co/image/farnell:3665083/)

**URL**: https://novapart.co/products/BSC004NE2LS5ATMA1/power-mosfet-n-channel-25-v-479-a-400-ohm-tdson
**SKU**: BSC004NE2LS5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0600
**Stock**: 10+
**Lead Time**: 358 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 5 |
| Qualification | - |
| Power Dissipation | 188W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TDSON |
| Drain Source Voltage Vds | 25V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 479A |
| Drain Source On State Resistance | 400µohm |
| Gate Source Threshold Voltage Max | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3665083/)

**BSC004NE2LS5** 

## **MOSFET** 

## **OptiMOS** 

## **Features** 

* Optimized for OR-ing application 

_R_ DS(on) @ _V_ GS 

|**Parameter**<br>~~Table~~ 1<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|25|V|
|_R_DS(on),max|0.45|mΩ|
|_I_D|479|A|
|_Q_oss|70|nC|
|_Q_G(0V..4.5V)|135|nC|



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|~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links|
|---|---|---|---|
|BSC004NE2LS5<br>~~Type/OrderingCode |~~|TDSON-8 FL<br>~~|~~|04NE2LS5<br>|-<br>|



Final Data Sheet 

1 

**OptiMOS[TM�] 5�Power-Transistor,�25�V BSC004NE2LS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 

Final Data Sheet 

2 

Rev.�2.0,��2020-04-23 

**OptiMOS[TM�] 5�Power-Transistor,�25�V BSC004NE2LS5** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-<br>-|-<br>-<br>-|479<br>338<br>40|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_A=25°C,<br>_R_THJA=50°C/W2)|
|Pulsed drain current3)|_I_D,pulse|-|-|1914|A|_T_A=25°C|
|Avalanche energy, single pulse4)|_E_AS|-|-|400|mJ|_I_D=30A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|188<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_THJA=50°C/W2)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|0.8|°C/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|°C/W|-|
|Device on PCB,<br>6 cm² cooling area|_R_thJA|-|-|50|°C/W|-|



> 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher Tcase please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 

> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 3) See Diagram 3 for more detailed information 

> 4) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.0,��2020-04-23 

**OptiMOS[TM�] 5�Power-Transistor,�25�V BSC004NE2LS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|25|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1|1.5|2|V|_V_DS=_V_GS,_I_D=10mA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=20V,_V_GS=0V,_T_j=25°C<br>_V_DS=20V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=16V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.40<br>0.54|0.45<br>0.85|mΩ|_V_GS=10V,_I_D=30A<br>_V_GS=4.5V,_I_D=30A|
|Gate resistance|_R_G|-|0.7|-|Ω|-|
|Transconductance|_g_fs|-|230|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=30A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|11000|-|pF|_V_GS=0V,_V_DS=12.5V,_f_=1MHz|
|Output capacitance|_C_oss|-|3600|-|pF|_V_GS=0V,_V_DS=12.5V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|3100|-|pF|_V_GS=0V,_V_DS=12.5V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|27.5|-|ns|_V_DD=12.5V,_V_GS=4.5V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|88.2|-|ns|_V_DD=12.5V,_V_GS=4.5V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|67.6|-|ns|_V_DD=12.5V,_V_GS=4.5V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|93.4|-|ns|_V_DD=12.5V,_V_GS=4.5V,_I_D=30A,<br>_R_G,ext=1.6Ω|



## **Table�6�����Gate�charge�characteristics[1)]** 

|**Table6Gatechargecharacte**|**ristics1)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|24|-|nC|_V_DD=12.5V,_I_D=30A,_V_GS=0to4.5V|
|Gate charge at threshold|_Q_g(th)|-|15|-|nC|_V_DD=12.5V,_I_D=30A,_V_GS=0to4.5V|
|Gate to drain charge|_Q_gd|-|69|-|nC|_V_DD=12.5V,_I_D=30A,_V_GS=0to4.5V|
|Switchingcharge|_Q_sw|-|78|-|nC|_V_DD=12.5V,_I_D=30A,_V_GS=0to4.5V|
|Gate charge total|_Q_g|-|135|-|nC|_V_DD=12.5V,_I_D=30A,_V_GS=0to4.5V|
|Gate plateau voltage|_V_plateau|-|2.2|-|V|_V_DD=12.5V,_I_D=30A,_V_GS=0to4.5V|
|Gate charge total|_Q_g|-|238|-|nC|_V_DD=12.5V,_I_D=30A,_V_GS=0to10V|
|Output charge|_Q_oss|-|70|-|nC|_V_DS=12.5V,_V_GS=0V|



> 1) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet 

Rev.�2.0,��2020-04-23 

4 

**OptiMOS[TM�] 5�Power-Transistor,�25�V BSC004NE2LS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|188|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|1914|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.77|1|V|_V_GS=0V,_I_F=30A,_T_j=25°C|
|Reverse recoverycharge|_Q_rr|-|30|-|nC|_V_R=12.5V,_I_F=_I_S,d_i_F/d_t_=400A/µs|



Final Data Sheet 

Rev.�2.0,��2020-04-23 

5 

**OptiMOS BSC004NE2LS5** 

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Final Data Sheet 

6 

**OptiMOS BSC004NE2LS5** 

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**----- Start of picture text -----**<br>
2000 1.4<br>10 V NV 5 V See) 2.8 V See 3 V 3.5 V<br>4.5 V<br>Lif POA<br>1750<br>tf / 1.2 fi)2Annee2000) Cee<br>) See<br>Ace<br>1500 | / / TTTELL 4 V Venue,A805Sae> 4eee42GedenseGeeseeee<br>7 1.0 BaP40S<br>p/p ee<br>1250 }-}/-5Lf) a CACPOCOeee A<br>0.8<br>_ // y ECOCCCCC CeCe eee 4 V<br>1000 / // ( e Coe<br>3.5 V 4.5 V<br>0.6<br>750 TLMerTTT oerSST 5 V<br>0.4 10 V<br>|W/}/fi PreeSoee<br>500<br>}/ Poo 3 V FEEEEEEEE<br>250 CepooIETEnAnHAEanAtl 2.8 V 0.2 PEPEECEEEE EEEeeeEEE eee EEEEEEEEEEECHEEEeee eee<br>Y a<br>yan F RE EE EE E ECEE eeeEe e e e  eeeeeeee<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 800 1000<br>V DS I D<br>[Vv] [A]<br>I D=f( V DS ), T j =25 °C; parameter: V GS R DS(on)=f( I D ), T j =25 °C; parameter: V GS<br>Diagram 7: Typ. transfer characteristics Diagram 8: Typ. drain-source on resistance<br>2000 ] 1.4 CCECEESSSSS08 OLE heeEEE EEE EEE LE LL<br>1750 / COCOA<br>25 °C 1.2<br>any SSSGe8 Cee<br>SSS008<br>175 °C a Ce<br>| / SSSSSe80) See<br>1500<br>I 1.0 BERERETA<br>/ / EOCCC CC( E s CHN E ETE E RREREIEREee<br>1250 | SSSSee<br>/ 0.8 PEE PSC EEE<br>175 °C<br>_< 1000 | / BEe FoeGoeeeeeceeeee erSS<br>7) See Ce<br>0.6<br>FREE Ce Cee NCEE EEE eee<br>VA FOC C ECC CONC Eee<br>750 ; FECEECCC<br>// CCE SCE 25 °C EEEeee<br>PEREFCCC ee<br>0.4<br>[ PCPC E ECPeeeeeeeeeeeeee eee) CERES<br>500<br>y, FRCP EEE eee eee e e e eeee<br>Y FEC C EEE Cee eee eee eee<br>y 0.2 FEEE EEE Cee ee eee eee eee<br>250<br>WYVA, EEEEEEEeee eeeee eeeeee<br>LYVV ECC P ERCEEPEECCeeee e eee eeeeee eee<br>0 0.0<br>0 1 2 3 4 5 0 2 4 6 8 10<br>V GS V GS<br>IV] IV]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS ),_=30 I D A; parameter: T j<br>] Ω<br>I D<br>DS(on)<br>R<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


Final Data Sheet 

7 

**OptiMOS BSC004NE2LS5** 

**==> picture [528 x 282] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0 PTT TITTLE LLL EEL 2.4 LL ET TT TTT TTT TTT TT EET<br>PELLET LE EET TEE TTT TET TET EET EET<br>Tee Aa LEE TET ETT TTT TET ET TTT EEE EE<br>2.0<br>1.6 TTT TT PA POOREST<br>PETIT a LEIA ET TTT EE ET ET ET TE EEE<br>7 [~~ = IN |<br>1.6<br>ite)° PECEELEEELEELELLE PEELE PITT TT TT TT [PASSE] ET TT<br>a 1.2 PCE AZ| LEE TET TTT TTT PNET~ PSMA~~<br>£ A PEE TET TET TTT ET ANEW EET<br>ha®PEELE 4Va EE percePN LAAN 100000 µA SRS<br>1.2<br>3E A N<br>5OP 0.8 POCdeenaPA FLTTISO TT TT TTT TT TT TTT TT ty 10000 µA rs<br>0.8<br>= PEPER FEET TT TTT TTT TT ET EET EET EE<br>LEE TET ETT TTT ET ETT EEE<br>0.4<br>TTT 0.4 PE EET TET TET ET EEE EE EE<br>ST PE ET TTT TTT TTT TET EET EET EET<br>PETE LEE TET ETT TTT ET TTTEEE<br>0.0 PETE TTT TEE E TEET E TTEE EEE E EEEELE] 0.0 PCCPFEEELEEEPTETELLE ELLE<br>-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>GS(th)<br>V<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [5] 10 [4]<br>A A GG _<br>25 °C<br>EEE EEE EEE EEE EEE EE EEE ; [}-—-~~~~~~} ~~~<br>PEEEEEeeP eee eee et i 25 °C, max COE<br>BRR 1 175 °C FOE<br>SS ' 175 °C, max POPE<br>EEIEEEEEEEEEEEEREEEEEE or o<br>SUA ARUUAAAAMAGAANROAGAAIE EE E<br>PEELE EEE EEE 10 [3] TET vaileer<br>FREE ee<br>ELT BEER EEE EEE EEE EEEEE<br>Coss<br>¢— 10 [4] Ee ee eex fasiiastfasttaat/ J<br>rN TT TT TT yy yy Ciss y,<br>Qa Crss cat (anion ad<br>CNNSEER EEE PELLETA ee<br>Ltt EEE Eee 10 [2] /<br>HLNSS /<br>PCE SEEPREa PRRa ERER REESE REEa aER EEE REEES<br>ATLL ELEY] —a PEP errr eee<br>TT SEGRE RRR REG ee ee<br>10 [3] 10 [1]<br>0 5 10 15 20 25 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS [V] V SD [V]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**OptiMOS BSC004NE2LS5** 

**==> picture [528 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [2] 10<br>ee  ee oT<br>St 5 V TTT ITI TTI ITAL A<br>CT 1 12 V COO<br>Lr | TTTCi fT TT ETT TTT) 1 20 V RR 4a ‘ ane<br>a A A<br>8<br>CATION TIE NT EEE ECE<br>aa STN S EE<br>OLLIE<br>10 [1] PINE EER SNIP} EEEEEEEEEEEEE<br>25 °C<br>a a a ee ee eee 6 /| L<br>Te NEON TTT a Ae easae<br>= PTMICCOMILT TTT TENANT S PEPEPer<br>Ooo/\ 100 °C EECCALET TTT TTT TATPTT<br>4 LTTE TTT TTI YT AE PE EET TE<br>\ TT<br>10 [0] [ee ee = ee \ EEE eH<br>SSS y [|<br>a Nt 150 °C SCO<br>Lr | Ci Tt) 2 US snkJ |l| j//f\lyel to ee<br>SHH<br>HHH HH | GE /| SEEERPEEEEEE<br>LUTEAL AREERLPI TTT TTT TTT Ty ye yey yy TTT<br>10 [-1] EETI CUI | 0 AREER<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [4] 0 40 80 120 160 200 240 280<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j,start V GS=f( Q gate I D T j V DD<br>I AV V GS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
TT Diagram Gate charge waveforms<br>28<br>27 LEEVA py<br>AEE A<br>LEE<br>26<br>5 vA<br> UA<br>25<br>PETTERS<br>ALLEL<br>ELE<br>24<br>Sf<br>LL) ee ant<br>23<br>ATE | fc<br>-80 -40 0 40 80 120 160 200<br>T j [°C]<br>V BR(DSS)=f( T j I D OOCCTCTCTCTCTC—C*Y<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**OptiMOS BSC004NE2LS5** 

Final Data Sheet 

10 

**OptiMOS BSC004NE2LS5** 

Final Data Sheet 

11 

**OptiMOS BSC004NE2LS5** 

## BSC004NE2LS5 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2020-04-23|Release of final version|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **Warnings** 

Final Data Sheet 

12 



## Links

- [View this product on Novapart](https://novapart.co/products/BSC004NE2LS5ATMA1/power-mosfet-n-channel-25-v-479-a-400-ohm-tdson)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/bsc004ne2ls5atma1/mosfet-n-ch-25v-479a-tdson/dp/3665083)
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