# Power MOSFET, N Channel, 100 V, 83 A, 5000 µohm, WDSON, Surface Mount

![Product image](https://novapart.co/image/farnell:2443415RL/)

**URL**: https://novapart.co/products/BSB056N10NN3GXUMA1/power-mosfet-n-channel-100-v-83-a-5000-ohm-wdson
**SKU**: BSB056N10NN3GXUMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.8900
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:83A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 78W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | WDSON |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 83A |
| Drain Source On State Resistance | 5000µohm |
| Gate Source Threshold Voltage Max | 2.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2443415RL/)

## n-Channel Power MOSFET 

OptiMOS™ BSB056N10NN3 G 

## Data Sheet 

2.5, 2011-05-27 Final 

Industrial & Multimarket 

**OptiMOS™ Power-MOSFET BSB056N10NN3 G** 

## **1 Description** 

OptiMOS™100V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 100V the best choice forthe demanding requirements of voltage regulator solutions in Solar, Drives, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS™ products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space- efficiency and cost. 

## **Features** 

- Optimized for high switching frequency DC/DC converter 

- Excellent Qg x RDS(on) product (FOM) 

- Very low on-resistance RDS(on) 

- Pb-free plating; RoHS compliant 

- Halogen-free according to IEC61249-2-21 

- Double sided cooling 

- Compatible with DirectFET® package MN footprint and outline 

- Low parasitic inductance 

- Low profile (<0.7 mm) 

## **Applications** 

- Synchronous rectification 

- Primary side switches 

- Power management for high performance computing 

- High power density point of load converters 

**Table 1 Key Performance Parameters Parameter Value Unit** ~~ee ee ee~~ _V_ DS 100 V ~~ee ee ee~~ RDS(on),max 5.6 mΩ ~~ee ee ee es~~ _I_ D 83 ~~ee~~ A ~~ee~~ QOSS 73 nC Qg.typ 56 ~~ee ee~~ 

## **Related Links** 

IFX OptiMOS webpage IFX OptiMOS product brief IFX OptiMOS spice models 

IFX Design tools 

**Type Package Marking** BSB056N10NN3 G MG-WDSON-2 0110 ~~——_—~~ 

Final Data Sheet 

1 

2.5, 2011-05-27 

**OptiMOS™ Power-MOSFET BSB056N10NN3 G** 

**==> picture [131 x 63] intentionally omitted <==**

## **2 Maximum ratings** 

at _T_ j = 25 °C, unless otherwise specified. 

## **Table 2 Maximum ratings** 

|**Table 2**<br>**Maximum ratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note / Test Condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-|-|83|A|_V_GS=10 V,_T_C=25 °C|
|||||52||_V_GS=10 V,_T_C=100 °C|
|||||9||_V_GS=10 V,_T_A=25 °C,<br>_R_thJA=45 K/W)1)|
|Pulsed drain current2)|_I_D,pulse|-|-|332||_T_C=25 °C|
|Avalanche energy, single pulse|_E_AS|-|-|450|mJ|_I_D=30 A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V||
|Power dissipation|_P_tot|-|-|78|W|_T_C=25 °C|
|||||2.8||_T_A=25 °C,_R_thJA=451)K/W|
|Operating and storage temperature|_T_j,_T_stg|-40|-|150|°C||
|IEC climatic category; DIN IEC 68-1||55/150/56|||||



- 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

- 2) See figure 3 for more detailed information 

## **3 Thermal characteristics** 

## **Table 3 Thermal characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case|_R_thJC|-|-|1.6|K/W|top|
|||-|1|-||bottom|
|Device on PCB|_R_thJA|-|-|45||6 cm2cooling area1)|



- 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µ, thick) copper area for drain conneciton. PCB is vertical in still air. 

Final Data Sheet 

2 

2.5, 2011-05-27 

**OptiMOS™ Power-MOSFET BSB056N10NN3 G** 

**==> picture [131 x 63] intentionally omitted <==**

**Electrical characteristics** 

## **4 Electrical characteristics** 

Electrical characteristics, at _T_ j=25 °C, unless otherwise specified. 

## **Table 4 Static characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|100|-|-|V|_V_GS=0 V,_I_D=1 mA|
|Gate threshold voltage|_V_GS(th)|2|2.7|3.5||_V_DS=_V_GS,_I_D=100 µA|
|Zero gate voltage drain current|_I_DSS|-|0.1|10|µA|_V_DS=100V,_V_GS=0 V,<br>_T_j=25 °C|
|||-|10|100||_V_DS=100 V,_V_GS=0 V,<br>_T_j=125 °C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20 V,_V_DS=0 V|
|Drain-source on-state resistance|_R_DS(on)|-|5|5.6|mΩ|_V_GS=10 V,_I_D=30A|
||||6.2|8.1||_V_GS=6 V,_I_D=15A|
|Gate resistance|_R_G|-|0.5|-|Ω||
|Transconductance|_g_fs|34|69||S||_V_DS|>2|_I_D|RDS(on)max,<br>_I_D=30 A|



## **Table 5 Dynamic characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|4100|5500|pF|_V_GS=0 V,_V_DS=50 V,<br>_f_=1 MHz|
|Output capacitance|_C_oss|-|750|1000|||
|Reverse transfer capacitance|_C_rss|-|27|-|||
|Turn-on delay time|_t_d(on)|-|15|-|ns|_V_DD=50V,_V_GS=10 V,<br>_I_D=30 A,_R_G= 1.6Ω|
|Rise time|_t_r|-|9|-|||
|Turn-off delay time|_t_d(off)|-|25|-|||
|Fall time|_t_f|-|8|-|||



Final Data Sheet 

3 

2.5, 2011-05-27 

**OptiMOS™ Power-MOSFET BSB056N10NN3 G** 

**==> picture [131 x 63] intentionally omitted <==**

**Electrical characteristics** 

## **Table 6 Gate charge characteristics[1)]** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|17|-|nC<br>V|_V_DD=50 V,<br>_I_D=30 A,<br>_V_GS=0 to 10 V|
||_Q_gd||9.7||||
|Gate to drain charge|_Q_sw|-|20|-|||
|Switching charge|_Q_g|-|56|74|||
|Gate charge total|_V_plateau|-|4.2|-|||
|Output charge|_Q_oss||73|97|nC|_V_DD=50 V,_V_GS=0 V|



1) See figure 16 for gate charge parameter definition 

## **Table 7 Reverse diode characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_s|||65|A|_T_C=25 °C|
|Diode pulse current|_I_S,pulse|||316|||
|Diode forward voltage|_V_SD|-|0.9|1.2|V|_V_GS=0 V,_I_F=_I_S,<br>_T_j=25 °C|
|Reverse recovery charge|_Q_rr|-|174|-|nC|_V_R=50V,_I_F=_30A_,<br>d_i_F/d_t_=100 A/µs|
|Reverse recovery time|trr|-|64|-|ns||



Final Data Sheet 

4 

2.5, 2011-05-27 

**OptiMOS™ Power-MOSFET BSB056N10NN3 G** 

**5 Electrical characteristics diagrams** 

## **Electrical characteristics diagrams** 

## **Table 8** 

## **1 Power dissipation** 

_P_ tot = f( _T_ C) 

## **2 Drain current** 

_ID=f(TC);_ parameter _:V_ GS 

## **Table 9** 

## **3 Safe operating area** _**T**_ **C=25 °C** 

_I_ D=f( _V_ DS); _T_ j=25 °C; D=0; parameter: _T_ p 

**==> picture [178 x 284] intentionally omitted <==**

**----- Start of picture text -----**<br>
 4 Max. transient thermal impedance<br>10"<br>a<br>40° SH<br>Su 7<br>Bi BA?ct<br>o<br>407 =f BEE<br>WN 0.02<br>0.01<br>107 single pulse<br>1o* 10° 40 10° 107<br>t, [s]<br> Z (thJC)=f( t p); parameter: D= t p/ T<br>**----- End of picture text -----**<br>


Final Data Sheet 

2.5, 2011-05-27 

5 

**OptiMOS™ Power-MOSFET BSB056N10NN3 G** 

**Electrical characteristics diagrams** 

**Table 10** 

> **5 Typ. output characteristics** _**T**_ **C=25 °C** 

_I_ D=f( _V_ DS); _T_ j=25 °C; parameter: _V_ GS 

**6 Typ. drain-source on-state resistance** 

_R_ DS(on)=f( _I_ D); _T_ j=25 °C; parameter: _V_ GS 

## **Table 11** 

**7 Typ. transfer characteristics** 

**==> picture [140 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
 I D=f(VGS); | V DS|>2| I D| R DS(on)max<br>**----- End of picture text -----**<br>


**==> picture [161 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
8 Typ. forward transconductance<br>"80 —tYo<br>“60<br>0 +++}<br>0 20 40 60<br>!p [A]<br> g fs=f( I D);  Tj =25 °C<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

2.5, 2011-05-27 

**OptiMOS™ Power-MOSFET BSB056N10NN3 G** 

**Electrical characteristics diagrams** 

## **Table 12** 

## **9 Drain-source on-state resistance** 

RDS(on)=f( _T_ j); _I_ D=30 A; _V_ GS=10 V 

## **10 Typ. gate threshold voltage** 

**==> picture [100 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GS(th)=f( T j);  V GS= V DS;<br>**----- End of picture text -----**<br>


**Table 13** 

**==> picture [457 x 284] intentionally omitted <==**

**----- Start of picture text -----**<br>
11 Typ. capacitances 12 Forward characteristics of reverse diode<br>10° 1000<br>SSeee===<br>rc LC 4100 [ Me<br>= 10° <=<br>oO — f 150 °C, 98%<br>10 ry<br>L<br>10" = 1 H<br>0 20 40 60 80 0.0 0.5 1.0 1.5<br>Vos [V] Vsp [V]<br>C=f( V DS);  V GS=0 V;  f =1 MHz  I F=f( V SD); parameter:  T j<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

Final Data Sheet 

2.5, 2011-05-27 

7 

**OptiMOS™ Power-MOSFET BSB056N10NN3 G** 

**Electrical characteristics diagrams** 

**Table 14** 

## **13 Avalanche characteristics** 

## **14 Typ. gate charge** 

_I_ AS=f( _t_ AV); _R_ GS=25 Ω; parameter: _T_ j(start) _V_ GS=f( _Q_ gate); _I_ D=30 A pulsed; parameter: _V_ DD 

## **Table 15** 

## **15 Drain-source breakdown voltage** 

## **16 Gate charge waveforms** 

_V_ BR(DSS)=f( _T_ j); _I_ D=1 mA 

Final Data Sheet 

8 

2.5, 2011-05-27 

**OptiMOS™ Power-MOSFET BSB056N10NN3 G** 

**6** 

## **Package outlines** 

## **Package outlines** 

**Figure 1 Outlines MG-WDSON-2, dimensions in mm/inches** 

Final Data Sheet 

9 

2.5, 2011-05-27 

**OptiMOS™ Power-MOSFET BSB056N10NN3 G** 

## **Package outlines** 

## **7** 

## **Package outlines** 

**Figure 2 Outlines MG-WDSON-2, dimensions in mm/inches** 

Final Data Sheet 

10 

2.5, 2011-05-27 

**OptiMOS™ Power-MOSFET BSB056N10NN3 G** 

## **Package outlines** 

## **8 Package outlines** 

## **9 Package outlines** 

Final Data Sheet 

11 

2.5, 2011-05-27 

**OptiMOS™ Power-MOSFET BSB056N10NN3 G** 

## **Revision History** 

## **9 Revision History** 

## **Revision History: 2011-05-27, 2.5** 

## **Previous Revision:** 

|**Revision**||**Subjects (major changes since last revision)**|
|---|---|---|
|0.1||Release of target data sheet|
|2.0|Release of Final data sheet||
|2.3|Package outlines errata corrections||
|2.4||DirectFET Disclaimer expired|



## **We Listen to Your Comments** 

Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: **erratum@infineon.com** 

Edition 2011-05-27 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.. 

Final Data Sheet 

12 

2.5, 2011-05-27 



## Links

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