# Power MOSFET, P Channel, 45 V, 90 mA, 14 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1843731/)

**URL**: https://novapart.co/products/BS250FTA/power-mosfet-p-channel-45-v-90-ma-14-ohm-sot-23
**SKU**: BS250FTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2580
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-90mA; Drain Source Voltage Vds:-45V; On Resistance Rds(on):9ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3.5V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 330mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 45V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 90mA |
| Drain Source On State Resistance | 14ohm |
| Gate Source Threshold Voltage Max | 3.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1843731/)

SOT23 P-CHANNEL ENHANCEMENT 

MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 

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PARTMARKING DETAIL — MX 

ABSOLUTE MAXIMUM RATINGS. 

SOT23 

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## **TYPICAL CHARACTERISTICS** 

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-1.2<br>VGS=-20V -1.0 VGS=<br>-1.0 -16V -16V<br>-14V<br>-14V -0.8<br>-0.8 -12V -12V<br>-0.6 -10V -0.6 -10V<br>-9V -9V<br>-0.4 -8V -0.4 -8V<br>-7V -6V -7V<br>-0.2 -5V -0.2 -6V<br>-5V<br>-4V -4.5V<br>   0   0<br>0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10<br>VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)<br>Output Characteristics  Saturation Characteristics<br>-10 -1.0<br>-8 -0.8<br>VDS=-10V<br>ID=<br>-6 -400mA -0.6<br>-4 -0.4<br>-2 -200mA -0.2<br>   0 -100mA    0<br>0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10<br>VGS-Gate Source Voltage  (Volts) VGS-Gate Source Voltage (Volts)<br>Voltage Saturation Characteristics  Transfer Characteristics<br>100 2.6<br>    VGS=-5V      -6V 2.4 VGS=-10V<br>-7V 2.2 ID=0.37A<br>2.0<br>-10V  1.8<br>  10 -15V  1.6<br>1.4<br>-20V<br>1.2 VGS=VDS<br>1.0 ID=-1mA<br>0.8<br>   1 0.6<br>-10 -100 -1000 -40 -20 0 20 40 60 80 100 120 140 160 180<br>ID-Drain Current (mA) Junction Temperature (°C)<br> On-resistance vs Drain Current  Normalised RDS(on) and VGS(th) vs Temperature<br>Gate Threshold Voltage VGS(TH)<br>DS(on)<br>Drain-Source Resistance R<br>Voltage (Volts)<br>Drain Source<br>DS-<br>V<br>)(Ω<br>RDS(on)-Drain Source On Resistance<br>- Drain Current (Amps) - Drain Current (Amps)<br> ID   ID<br>On-State Drain Current  (Amps)<br>D(On)-<br> I<br>GS(th)<br> and V<br>DS(on)<br>Normalised R<br>**----- End of picture text -----**<br>


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## **TYPICAL CHARACTERISTICS** 

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120 120<br>100 100<br>80 80<br>Note:VDS=-10V Note:VDS=-10V<br>60 60<br>40 40<br>20 20<br>   0    0<br>0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10<br>ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)<br> Transconductance v drain current  Transconductance v gate-source voltage<br>60 2<br>50 Note:VGS=0V 1 Note:ID=- 0.2A<br>0<br>f=1MHz<br>40 -2<br>30 Ciss -4     -20VVDS=  -40V  -60V<br>-6<br>20 -8<br>Coss -10<br>10 -12<br>Crss<br>-14<br>0<br>-16<br>0 -10 -20 -30 -40 -50 -60 -70 0 0.5 1.0 1.5<br>VDS-Drain Source Voltage (Volts) Q-Gate Charge (nC)<br>Capacitance v drain-source voltage  Gate charge v gate-source voltage<br>-Transconductance (mS)  -Transconductance (mS)<br>fs fs<br>g g<br>C-Capacitance (pF)<br>-Gate Source Voltage (Volts)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **������** 

## **TYPICAL CHARACTERISTICS** 

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-1.2<br>VGS=-20V -1.0 VGS=<br>-1.0 -16V -16V<br>-14V<br>-14V -0.8<br>-0.8 -12V -12V<br>-0.6 -10V -0.6 -10V<br>-9V -9V<br>-0.4 -8V -0.4 -8V<br>-7V -6V -7V<br>-0.2 -5V -0.2 -6V<br>-5V<br>-4V -4.5V<br>   0   0<br>0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10<br>VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)<br>Output Characteristics  Saturation Characteristics<br>-10 -1.0<br>-8 -0.8<br>VDS=-10V<br>ID=<br>-6 -400mA -0.6<br>-4 -0.4<br>-2 -200mA -0.2<br>   0 -100mA    0<br>0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10<br>VGS-Gate Source Voltage  (Volts) VGS-Gate Source Voltage (Volts)<br>Voltage Saturation Characteristics  Transfer Characteristics<br>100 2.6<br>    VGS=-5V      -6V 2.4 VGS=-10V<br>-7V 2.2 ID=0.37A<br>2.0<br>-10V  1.8<br>  10 -15V  1.6<br>1.4<br>-20V<br>1.2 VGS=VDS<br>1.0 ID=-1mA<br>0.8<br>   1 0.6<br>-10 -100 -1000 -40 -20 0 20 40 60 80 100 120 140 160 180<br>ID-Drain Current (mA) Junction Temperature (°C)<br> On-resistance vs Drain Current  Normalised RDS(on) and VGS(th) vs Temperature<br>Gate Threshold Voltage VGS(TH)<br>DS(on)<br>Drain-Source Resistance R<br>Voltage (Volts)<br>Drain Source<br>DS-<br>V<br>)(Ω<br>RDS(on)-Drain Source On Resistance<br>- Drain Current (Amps) - Drain Current (Amps)<br> ID   ID<br>On-State Drain Current  (Amps)<br>D(On)-<br> I<br>GS(th)<br> and V<br>DS(on)<br>Normalised R<br>**----- End of picture text -----**<br>


## **������** 

## **TYPICAL CHARACTERISTICS** 

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120 120<br>100 100<br>80 80<br>Note:VDS=-10V Note:VDS=-10V<br>60 60<br>40 40<br>20 20<br>   0    0<br>0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10<br>ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)<br> Transconductance v drain current  Transconductance v gate-source voltage<br>60 2<br>50 Note:VGS=0V 1 Note:ID=- 0.2A<br>0<br>f=1MHz<br>40 -2<br>30 Ciss -4     -20VVDS=  -40V  -60V<br>-6<br>20 -8<br>Coss -10<br>10 -12<br>Crss<br>-14<br>0<br>-16<br>0 -10 -20 -30 -40 -50 -60 -70 0 0.5 1.0 1.5<br>VDS-Drain Source Voltage (Volts) Q-Gate Charge (nC)<br>Capacitance v drain-source voltage  Gate charge v gate-source voltage<br>-Transconductance (mS)  -Transconductance (mS)<br>fs fs<br>g g<br>C-Capacitance (pF)<br>-Gate Source Voltage (Volts)<br>GS<br>V<br>**----- End of picture text -----**<br>




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