# IGBT, 80 A, 1.65 V, 300 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:4350084/)

**URL**: https://novapart.co/products/BIDW40N65H5/igbt-80-a-165-v-300-w-650-to-247-3-pins
**SKU**: BIDW40N65H5
**Manufacturer**: BOURNS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.7200
**Stock**: 500+
**Lead Time**: 120 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (04-Feb-2026) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.65V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4350084/)

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W40N65H5<br>**----- End of picture text -----**<br>


## **Features** 

n 650 V, 40 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) 

n Novel trench-gate field-stop technology n Optimized for conduction n High-speed switching 

n Maximum operating Tj = 175 °C n RoHS compliant* 

## **Applications** 

n Switched-Mode Power Supplies (SMPS) n Uninterruptible Power Sources (UPS) n Power Factor Correction (PFC) 

n Inverters 

n Welding converters n Photovoltaic 

## **BIDW40N65H5 Insulated Gate Bipolar Transistor (IGBT)** BOURNS Eee 

## ~~**General Information**~~ 

The Bourns[®] Model BIDW40N65H5 IGBT device combines technology from a MOS gate and a bipolar transistor, resulting in an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics while resulting in a lower CollectorEmitter Saturation Voltage (VCE(sat)) and fewer switching losses. 

## ~~**Additional Information**~~ 

Click these links for more information: 

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PRODUCT  TECHNICAL INVENTORY SAMPLES CONTACT<br>SELECTOR LIBRARY<br>**----- End of picture text -----**<br>


## ~~**Maximum Electrical Ratings (TC = 25 °C, unless otherwise specified)**~~ 

|**Parameter**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Collector-Emitter Voltage|VCES|650|V|
|Continuous Collector Current (TC= 25 °C), limited by Tjmax|IC|80|A|
|Continuous Collector Current (TC= 100 °C), limited by Tjmax|IC|40|A|
|Pulsed Collector Current, tplimited by Tjmax|ICP|120|A|
|Gate-Emitter Voltage|VGE|±20|V|
|Gate-Emitter Voltage (tp≤10 µs, D < 1 %)|VGE|±30|V|
|Continuous Forward Current (TC= 100 °C), limited by Tjmax|IF|20|A|
|Total Power Dissipation|Ptotal|300|W|
|Storage Temperature|TSTG|-55 to +150|°C|
|Operating Junction Temperature|Tj|-40 to +175|°C|



## ~~**Thermal Resistance**~~ 

|**Parameter**|**Symbol**|**Max**|**Unit**|
|---|---|---|---|
|IGBT Thermal Resistance Junction - Case|Rth(j-c)_IGBT|0.5|°C/W|
|Diode Thermal Resistance Junction - Case|Rth(j-c)_Diode|1.4|°C/W|



## ~~**Typical Part Marking**~~ 

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MFR’S W40N65H5<br>TRADEMARK<br>YYYYYYY<br>**----- End of picture text -----**<br>


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DEVICE CODE<br>**----- End of picture text -----**<br>


## LOT ID: 

- 1ST CHARACTER INDICATES PRODUCTION LINE 

- 2ND CHARACTER INDICATES GRADE 

- 3RD CHARACTER INDICATES YEAR OF MANUFACTURE 

- 4TH CHARACTER INDICATES MONTH OF MANUFACTURE 5TH, 6TH & 7TH CHARACTERS INDICATE SERIAL NO. 

- (7TH CHARACTER COULD BE OMITTED) 

## ~~**Internal Circuit**~~ 

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2<br>FOL<br>1 – GATE<br>2 – COLLECTOR<br>*1 3 – EMITTER<br>1<br>*1 – BUILT-IN FRD<br>BACK SIDE TAB<br>– COLLECTOR<br>3<br>1 2 3<br>**----- End of picture text -----**<br>


*RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. 

Users should verify actual device performance in their specific applications. 

**WARNING  Cancer and Reproductive Harm** www.P65Warnings.ca.gov 

The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BIDW40N65H5 Insulated Gate Bipolar Transistor (IGBT)** 

## ~~**Static Electrical Characteristics (TC = 25 °C, Unless Otherwise Specified)**~~ 

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Value<br>Parameter Symbol Conditions Unit<br>Min. Typ. Max.<br>**----- End of picture text -----**<br>


|**Parameter**|**Symbol**|**Conditions**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
||||**Min.**|**Typ.**|**Max.**||
||||||||
|Collector-Emitter Breakdown Voltage|BVCES|VGE= 0 V, IC= 250 µA|650|—|—|V|
|Collector-Emitter Saturation Voltage|VCE(sat)|VGE= 15 V, IC= 40 A,<br>TC= 25 °C|—|1.65|2.1|V|
|||VGE= 15 V, IC= 40 A,<br>TC= 150 °C|—|1.85|—||
|Diode Forward On-Voltage|VF|IF= 20 A, TC= 25 °C|—|1.5|2|V|
|||IF= 20 A, TC= 150 °C|—|1.4|—|V|
|Gate Threshold Voltage|VGE(th)|VCE= VGE, IC= 250 µA|3.2|4.5|5.8|V|
|Collector Cut-off Current|ICES|VGE= 0 V, VCE= 650 V|—|—|200|µA|
|Gate-Emitter Leakage Current|IGES|VCE= 0 V, VGE= ± 20 V|—|—|±400|nA|



## ~~**Dynamic Electrical Characteristics (TC = 25 °C, Unless Otherwise Specified)**~~ 

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Value<br>Parameter Symbol Conditions Unit<br>Min. Typ. Max.<br>**----- End of picture text -----**<br>


|**Parameter**|**Symbol**|**Conditions**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
||||**Min.**|**Typ.**|**Max.**||
||||||||
|Input Capacitance|Cies|VCE= 30 V, VGE= 0 V,<br>f = 1 MHz|—|3150|—|pF|
|Output Capacitance|Coes||—|63|—||
|Reverse Transfer Capacitance|Cres||—|11|—||
|Total Gate Charge|Qg|VCE= 400 V, VGE= 15 V,<br>IC= 40.0 A|—|111|—|nC|
|Gate-Emitter Charge|Qge||—|29|—||
|Gate-Collector Charge|Qgc||—|25|—||



## ~~**IGBT Switching Characteristics (Inductive Load, TC = 25 °C, unless otherwise specified)**~~ 

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Value<br>Parameter Symbol Conditions Unit<br>Min. Typ. Max.<br>**----- End of picture text -----**<br>


|**Parameter**|**Symbol**|**Conditions**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
||||**Min.**|**Typ.**|**Max.**||
||||||||
|Turn-on Delay Time|td(on)|VCE= 400 V, VGE= 15 V,<br>IC= 40.0 A, RG= 10 Ω|—|28|—|ns|
|Current Rise Time|tr||—|80|—|ns|
|Turn-off Delay Time|td(off)||—|116|—|ns|
|Current Fall Time|tf||—|98|—|ns|
|Turn-on Switching Energy|Eon||—|1.9|—|mJ|
|Turn-off Switching Energy|Eoff||—|0.52|—|mJ|
|Total Switching Energy|Ets||—|2.4|—|mJ|



Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BIDW40N65H5 Insulated Gate Bipolar Transistor (IGBT)** 

## ~~**Diode Switching Characteristics (TC = 25 °C, unless otherwise specified)**~~ 

|**Parameter**|**Symbol**|**Conditions**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
||||**Min.**|**Typ.**|**Max.**||
|Reverse Recovery Time|trr|dlF/dt = 200 A/µs,<br>IF= 20.0 A|—|165|—|ns|
|Reverse Recovery Charge|Qrr||—|223|—|nC|



## ~~**Electrical Characteristic Performance**~~ 

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Typical Output Characteristics Typical Saturation Voltage Characteristics<br>600 450<br>Common Emitter  Common Emitter<br>500 TC = 25 °C 400 V GE  = 15 V<br>VGE = 9 V 350<br>400 VVGGEE = 11 V = 13 V 300 TC = 25 °C<br>300 VVGE GE  = 15 V= 17 V 250 TC = 150 °C<br>200<br>200 150<br>100<br>100<br>50<br>0 0<br>0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 9 10<br>Collector-emitter Voltage – VCE (V) Collector-emitter Voltage – VCE (V)<br>Typical Transfer Characteristics Typical Saturation Voltage vs VGE @ TC = 25 °C<br>300 15<br>Common Emitter  Common Emitter<br>VCE = 15 V TC = 25 °C<br>250<br>TC = 25  ° C<br>200 10 IICC = 10 A = 20 A<br>IC = 40 A<br>150 TC = 150  ° C<br>100 5<br>50<br>-20 0<br>0 2 4 6 8 10 12 14 4 8 12 16 20<br>Gate-emitter Voltage – VGE (V) Gate-emitter Voltage – VGE (V)<br>Collector Current – I (A)C Collector Current – I (A)C<br> (V)<br> (A) CE(sat)<br>C<br>Collector Current – I<br>Collector-emitter Voltage – V<br>**----- End of picture text -----**<br>


Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BIDW40N65H5 Insulated Gate Bipolar Transistor (IGBT)** 

## ~~**Electrical Characteristic Performance (continued)**~~ 

## ~~**Typical Saturation Voltage vs VGE @ TC = 150 °C**~~ 

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15<br>Common Emitter<br>TC = 150 °C<br>10 IC = 10 A<br>IC = 20 A<br>IC = 40 A<br>5<br>0<br>4 8 12 16 20<br>Gate-emitter Voltage – VGE (V)<br>Typical Capacitance Characteristics<br>4000<br>3600<br>Cies<br>3200<br>2800<br>2400<br>2000<br>1600<br>1200<br>800 Common Emitter<br>VGE = 0 V, f = 1 MHz<br>400 Coes TC = 25 °C<br>Cres<br>0<br>1 10 100<br>Collector-emitter Voltage – VCE (V)<br> (V)<br>CE(sat)<br>Collector-emitter Voltage – V<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


## ~~**Typical Saturation Voltage vs Case Temperature**~~ 

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2.5<br>Common Emitter<br>VGE = 15 V<br>2.0<br>40 A<br>1.5<br>20 A<br>1.0 IC = 10 A<br>0.5<br>25 50 75 100 125 150<br>Case Temperature – TC (°C)<br>Typical Gate Charge Characteristics<br>15<br>TC = 25 °C<br>12<br>9<br>6<br>3 V CC  = 200 V<br>VCC = 300 V<br>VCC = 400 V<br>0<br>0 20 40 60 80 100 120<br>Gate Charge – Qg (nC)<br> (V)<br>CE(sat)<br>Collector-emitter Voltage – V<br> (V)<br>GE<br>Gate-emitter Voltage – V<br>**----- End of picture text -----**<br>


Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BIDW40N65H5 Insulated Gate Bipolar Transistor (IGBT)** 

## ~~**Electrical Characteristic Performance (continued)**~~ 

## ~~**Typical Turn-on Characteristics vs Gate Resistance**~~ 

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1000<br>tr<br>100<br>td(on)<br>10<br>Common Emitter<br>VCC = 400 V, VGE = 15 V<br>I C  = 40 A, T C  = 25 °C<br>1<br>0 10 20 30 40 50 60 70 80 90 100<br>Gate Resistance – RG (Ω)<br>Switching Time (ns)<br>**----- End of picture text -----**<br>


## ~~**Typical Switching Loss vs Gate Resistance**~~ 

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10000<br>Common Emitter<br>VCC = 400 V, VGE = 15 V<br>IC = 40 A, TC = 25 °C E(on)<br>E(off)<br>1000<br>100<br>0 10 20 30 40 50 60 70 80 90 100<br>Gate Resistance – RG (Ω)<br>Switching Loss (µJ)<br>**----- End of picture text -----**<br>


~~**Typical Turn-off Characteristics vs Gate Resistance**~~ 

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1000<br>Common Emitter<br>VCC = 400 V, VGE = 15 V<br>IC = 40 A, TC = 25 °C td(off)<br>tf<br>100<br>10<br>0 10 20 30 40 50 60 70 80 90 100<br>Gate Resistance – RG (Ω)<br>Typical Turn-on Characteristics vs Collector Current<br>1000<br>Common Emitter<br>V CC  = 400 V, V GE  = 15 V<br>R G  = 10  Ω , T C  = 25 °C<br>tr<br>100<br>td(on)<br>10<br>1<br>0 10 20 30 40 50 60 70 80<br>Collector Current – IC (A)<br>Switching Time (ns)<br>Switching Time (ns)<br>**----- End of picture text -----**<br>


Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BIDW40N65H5 Insulated Gate Bipolar Transistor (IGBT)** 

## ~~**Electrical Characteristic Performance (continued)**~~ 

## ~~**Typical Turn-off Characteristics vs Collector Current**~~ 

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1000<br>Common Emitter<br>VCC = 400 V, VGE = 15 V<br>RG = 10 Ω, TC = 25 °C<br>td(off)<br>100<br>tf<br>10<br>0 10 20 30 40 50 60 70 80<br>Collector Current – IC (A)<br>Switching Time (ns)<br>**----- End of picture text -----**<br>


## ~~**Typical Switching Loss Characteristics vs Collector Current**~~ 

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10000<br>Common Emitter<br>E(on)<br>VCC = 400 V, VG E  = 15 V<br>R G  = 10  Ω , T C  = 25 °C<br>1000 E(off)<br>100<br>10<br>0 10 20 30 40 50 60 70 80 90<br>Collector Current – IC (A)<br>Switching Loss (µJ)<br>**----- End of picture text -----**<br>


## ~~**Typical Forward Characteristics**~~ 

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100<br>TC = 150 °C TC = 25 °C<br>10<br>1<br>0 0.5 1.0 1.5 2.0 2.5<br>Forward Voltage – VF (V)<br>Forward Current – I (A)F<br>**----- End of picture text -----**<br>


## ~~**Typical Reverse Recovery Time vs Forward Current**~~ 

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250<br>200 di/dt = 100 A/µs<br>150<br>di/dt = 200 A/µs<br>100<br>50<br>0<br>5 10 15 20<br>Forward Current – IF (A)<br> (ns)<br>rr<br>Reverse Recovery Time – t<br>**----- End of picture text -----**<br>


Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BIDW40N65H5 Insulated Gate Bipolar Transistor (IGBT)** 

## ~~**Electrical Characteristic Performance (continued)**~~ 

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**----- Start of picture text -----**<br>
Typical Reverse Recovery Charge vs Forward Current Slope vs Forward Current<br>250<br>200<br>200 di/dt = 200 A/µs<br>dirr/dt = 200 A/µs<br>150 160<br>di/dt = 100 A/µs<br>100<br>120<br>50 dirr/dt = 100 A/µs<br>0 80<br>5 10 15 20 15 25 35 45<br>Forward Current – IF (A) Forward Current – IF (A)<br>Peak Reverse Recovery Current vs Forward Current Forward Bias Safe Operating Area<br>5.0<br>100<br>4.5<br>4.0<br>3.5 Irm = 200 A/µs 10<br>3.0<br>2.5<br>Irm = 100 A/µs 1<br>2.0<br>Notes:<br>1.5 1. Max. junction temperature: 175 °C<br>2. Max. reference temperature: 25 °C<br>1.0 0.1<br>5 15 25 35 45 1 10 100 1000 10000<br>Forward Current – IF (A) Drain Source Voltage – VCE (V)<br>1 ms<br>10<br>µs<br>10<br>ms<br>100<br>µs<br> (nC)<br>rr<br> (A/µs)/dt<br>irr<br>Slope – d<br>Reverse Recovery Charge – Q<br> (A)<br>rm<br>Drain Current – I (A)c<br>Peak Reverse Recovery Current – I<br>**----- End of picture text -----**<br>


Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BIDW40N65H5 Insulated Gate Bipolar Transistor (IGBT)** 

## ~~**Electrical Characteristic Performance (continued)**~~ 

## ~~**IGBT Transient Thermal Impedance vs tp(on) Duration (D=tp/T)**~~ 

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**----- Start of picture text -----**<br>
10 [0]<br>50 %<br>10 [-1]<br>10 %<br>5 %<br>10 [-2]<br>1 %<br>Single Pulse<br>10 [-3]<br>10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>tp, Pulse Duration (s)<br>p(on) Duration (D=tp/T) Duration (D=tp/T)p/T)/T)<br>10 [1]<br>10 [0]<br>50 %<br>10 %<br>10 [-1]<br>5 %<br>1 %<br>Single Pulse<br>10 [-2]<br>10 [-3]<br>10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>tp, Pulse Duration (s)<br> (°C/W)<br>thJC<br>Transient Thermal Impedance - Z<br> (°C/W)<br>thJC<br>Transient Thermal Impedance - Z<br>**----- End of picture text -----**<br>


## ~~**Diode Transient Thermal Impedance vs tp(on) Duration (D=tp/T) Duration (D=tp/T)p/T)/T)**~~ 

Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BIDW40N65H5 Insulated Gate Bipolar Transistor (IGBT)** 

~~**Inductive Load Test Circuit How to Order**~~ **B I D W 40 N 65 H5** B = Bourns[®] D I = IGBT L Type D = Discrete Package Code IC W = TO-247-3L VCE VCC Current Rating 40 = 40 A RG D.U.T. Device Type N = N-channel Nominal Voltage (divided by 10) 65 = 650 V VGE Optimization H = High Speed Version Number 5 = Revision Control 

## ~~**Environmental Characteristics**~~ 

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L = 200 µH, VCE = 400 V, VGE = 15 V, IC = 40 A, RG = 10 Ω<br>**----- End of picture text -----**<br>


ESD Class (HBM) .......................................................................2 

Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BIDW40N65H5 Insulated Gate Bipolar Transistor (IGBT)** 

## ~~**Product Dimensions**~~ 

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E<br>A<br>P<br>Q DIA. A2<br>E2<br>D<br>L1<br>L<br>b2 b c A1<br>b4<br>e<br>MM<br>DIMENSIONS:<br>(INCHES)<br>**----- End of picture text -----**<br>


## ~~**Packaging Specifications**~~ 

BIDW40N65H5 ............................................... 30 pieces per tube 

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Symbol Min. Nom. Max.<br>**----- End of picture text -----**<br>


|**Symbol**|**Min.**|**Min.**|**Nom.**|**Nom.**|**Max.**|**Max.**|
|---|---|---|---|---|---|---|
||||||||
|A||4.80<br>(.189)||5.00<br>(.197)||5.20<br>(.205)|
|A1||2.21<br>(.087)||2.41<br>(.095)||2.59<br>(.102)|
|A2||1.85<br>(.073)||2.00<br>(.079)||2.15<br>(.085)|
|b||1.11<br>(.044)||—||1.36<br>(.054)|
|b2||1.91<br>(.075)||—||2.25<br>(.089)|
|b4||2.91<br>(.115)||—||3.25<br>(.128)|
|c||0.51<br>(.020)||—||0.75<br>(.030)|
|D||20.80<br>(.819)||21.00<br>(.827)||21.30<br>(.839)|
|E||15.50<br>(.610)||15.80<br>(.622)||16.10<br>(.634)|
|E2||4.40<br>(.173)||5.00<br>(.197)||5.20<br>(.205)|
|e||||5.44  BSC<br>(.214)|||
|L||19.72<br>(.776)||19.92<br>(.784)||20.22<br>(.796)|
|L1||—||—||4.30<br>(.169)|
|P||3.40<br>(.134)||—||3.80<br>(.150)|
|Q||5.60<br>(.220)||5.80<br>(.228)||6.00<br>(.236)|



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REV. 11/23 

Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

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- [View this product on Novapart](https://novapart.co/products/BIDW40N65H5/igbt-80-a-165-v-300-w-650-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/bourns/bidw40n65h5/igbt-single-650v-80a-to-247/dp/4350084)
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