BFU580GX

Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 1 W, 30 mA, SOT-223

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Manufacturer: NXP
Product type:
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:11GHz; Power Dissipation Pd:1W; DC Collector Current:30mA; DC Current Gain hFE:95hFE; RF Tra
MSL: MSL 1 - Unlimited
SVHC: No SVHC (27-Jun-2024)
No. of Pins: 4Pins
Product Range: BFU580G
Qualification: AEC-Q101
Power Dissipation: 1W
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 11GHz
Transistor Case Style: SOT-223
DC Current Gain hFE Min: 95hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 30mA
Collector Emitter Voltage Max: 12V

Delivery and price
Units per pack	500
Price	0.314 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 30, 2026