BFS483H6327XTSA1

**BFS483** 

## **NPN Silicon RF Transistor*** 

- For low noise, high-gain broadband amplifiers at 

- collector currents from 2 mA to 30 mA 

- _f_ T = 8 GHz, _F_ = 0.9 dB at 900 MHz 

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- Two (galvanic) internal isolated 

- Transistor in one package 

- For orientation in reel see 

package information below 

- Pb-free (RoHS compliant) package[1)] 

- Qualified according AEC Q101 

- Short term description 

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C1 E2 B2<br>6 5 4<br>TR2<br>TR1<br>1 2 3<br>B1 E1 C2<br>EHA07196<br>**----- End of picture text -----**<br>


## **ESD** ( **E** lectro **s** tatic **d** ischarge) sensitive device, observe handling precaution! 

|**Type**|**Marking**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Package**|
|---|---|---|---|---|---|---|---|---|
|BFS483|RHs|1=B|2=E|3=C|4=B|5=E|6=C|SOT363|



1Pb-containing package may be available upon special request 

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**BFS483** 

## **Maximum Ratings** 

|**Maximum Ratings**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Collector-emitter voltage|_V_CEO|12|V|
|Collector-emitter voltage|_V_CES|20||
|Collector-base voltage|_V_CBO|20||
|Emitter-base voltage|_V_EBO|2||
|Collector current|_I_C|65|mA|
|Base current|_I_B|5||
|Total power dissipation1)<br>_T_S ≤40 °C|_P_tot|450|mW|
|Junction temperature|_T_j|150|°C|
|Ambient temperature|_T_A|-65 ... 150||
|Storage temperature|_T_stg|-65 ... 150||
|**Thermal Resistance**||||
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Junction - soldering point2)|_R_thJS|≤245|K/W|



**Electrical Characteristics** at _T_ A = 25°C, unless otherwise specified 

|**Electrical Characteristics**at_T_A= 25°C,unless o|therwise s|pecified|pecified|pecified||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**DC Characteristics**||||||
|Collector-emitter breakdown voltage<br>_I_C= 1 mA,_I_B= 0|_V_(BR)CEO|12|-|-|V|
|Collector-emitter cutoff current<br>_V_CE= 20 V,_V_BE= 0|_I_CES|-|-|100|µA|
|Collector-base cutoff current<br>_V_CB= 10 V,_I_E= 0|_I_CBO|-|-|100|nA|
|Emitter-base cutoff current<br>_V_EB= 1 V,_I_C= 0|_I_EBO|-|-|1|µA|
|DC current gain-<br>_I_C= 15 mA,_V_CE= 8 V,pulse measured|_h_FE|70|100|140|-|



> 1 _T_ S is measured on the collector lead at the soldering point to the pcb 

> 2For calculation of _R_ thJA please refer to Application Note Thermal Resistance 

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**BFS483** 

|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**AC Characteristics**(verified by random sampling)||||||
|Transition frequency<br>_I_C= 25 mA,_V_CE= 8 V,_f_= 500 MHz|_f_T|6|8|-|GHz|
|Collector-base capacitance<br>_V_CB= 10 V,_f_= 1 MHz,_V_BE= 0 ,<br>emitter grounded|_C_cb|-|0.34|0.54|pF|
|Collector emitter capacitance<br>_V_CE= 10 V,_f_= 1 MHz,_V_BE= 0 ,<br>base grounded|_C_ce|-|0.13|-||
|Emitter-base capacitance<br>_V_EB= 0.5 V,_f_= 1 MHz,_V_CB= 0 ,<br>collector grounded|_C_eb|-|1.1|-||
|Noise figure<br>_I_C= 5 mA,_V_CE= 8 V,_Z_S=_Z_Sopt,<br>_f_= 900 MHz<br>_I_C= 5 mA,_V_CE= 8 V,_Z_S=_Z_Sopt,<br>_f_= 1.8 GHz|_F_|-<br>-|0.9<br>1.4|-<br>-|dB|
|Power gain, maximum stable1)<br>_I_C= 15 mA,_V_CE= 8 V,_Z_S=_Z_Sopt,_Z_L=_Z_Lopt,<br>_f_= 900 MHz|_G_ms|-|19|-|dB|
|Power gain, maximum available2)<br>_I_C= 15 mA,_V_CE= 8 V,_Z_S=_Z_Sopt,_Z_L=_Z_Lopt,<br>_f_= 1.8 GHz|_G_ma|-|12.5|-|dB|
|Transducer gain<br>_I_C= 15 mA,_V_CE= 8 V,_Z_S=_Z_L= 50Ω,<br>_f_= 900 MHz<br>_I_C= 15 mA,_V_CE= 8 V,_Z_S=_Z_L= 50Ω,<br>_f_= 1.8 MHz||_S_21e|2|-<br>-|15.5<br>10|-<br>-|dB|



> 1 _G_ ms = | _S_ 21 / _S_ 12| 

> 2 _G_ ma = | _S_ 21e / _S_ 12e| (k-(k²-1)1/2) 

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**BFS483** 

## **Total power dissipation** _P_ tot = ƒ ( _T_ S) 

**Permissible Pulse Load** _R_ thJS = ƒ ( _t_ p) 

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500  10 3<br>mW<br>400  K/W<br>350<br>300<br>250  10 2<br>0.5<br>0.2<br>200<br>0. 1<br>0.05<br>150<br>0.2<br>0.1<br>100  0.005<br>D = 0<br>50<br>0 10 1<br>0 20 40 60 80 100 120 °C 150 10  [-7 ] 10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>T S t p<br>tot thJS<br>P R<br>**----- End of picture text -----**<br>


## **Permissible Pulse Load** 

## _P_ totmax/ _P_ totDC = ƒ ( _t_ p) 

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10 2<br>-<br>D = 0<br>0.005<br>0.01<br>0.02<br>10 1  0.05<br>0.1<br>0.2<br>0.5<br>10 0<br>10  [-7 ] 10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>t<br>p<br>totDC<br>/ P totmax<br> P<br>**----- End of picture text -----**<br>


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**Package SOT363** 

**BFS483** 

## Package Outline 

## Foot Print 

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2 ±0.2 0.9 [±0.1]<br>0.2 +0.1-0.05 6x 0.1 MAX.<br>0.1 M<br>0.1<br>A<br>6 5 4<br>1 2 3<br>Pin 1<br>marking 0.65 0.65 0.15 +0.1-0.05<br>0.2 M A<br>0.3<br>0.65<br>0.65<br>±0.1 ±0.1<br>2.1 0.1 MIN. 1.25<br>0.7<br>0.9 1.6<br>**----- End of picture text -----**<br>


## Marking Layout (Example) 

Small variations  in positioning of Date code, Type code and Manufacture are possible. 

Manufacturer 2005, June Date code (Year/Month) Pin 1 marking BCR108S Laser marking Type code 

## Standard Packing 

Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 

For symmetric types no defined Pin 1 orientation in reel. 

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4 0.2<br>Pin 1 2.15 1.1<br>marking<br>8<br>2.3<br>**----- End of picture text -----**<br>


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**BFS483** 

Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. 

## **Attention please!** 

The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( **www.infineon.com** ). 

## **Warnings** 

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. 

Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

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