BFS483H6327XTSA1

Bipolar - RF Transistor, Dual NPN, 12 V, 8 GHz, 450 mW, 65 mA, SOT-363

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Manufacturer: INFINEON
Product type: Bipolar RF Transistors
Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:450mW; DC Collector Current:65mA; DC Current Gain hFE:70hFE;
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: -
Power Dissipation: 450mW
Transistor Mounting: Surface Mount
Transistor Polarity: Dual NPN
Transition Frequency: 8GHz
Transistor Case Style: SOT-363
DC Current Gain hFE Min: 70hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 65mA
Collector Emitter Voltage Max: 12V

Delivery and price
Units per pack	5000
Price	0.211 €
Current stock	500+
Lead time	7 days

Datasheet

Updated at March 13, 2026