# Bipolar - RF Transistor, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, SOT-23

![Product image](https://novapart.co/image/farnell:1056522/)

**URL**: https://novapart.co/products/BFS17PE6327HTSA1/bipolar-rf-transistor-npn-15-v-25-ghz-280-mw-ma
**SKU**: BFS17PE6327HTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar RF Transistors
**Price**: €0.0600
**Stock**: 10+

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:2.5GHz; Power Dissipation Pd:280mW; DC Collector Current:25mA; DC Current Gain hFE:70hFE; RF Transistor

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 280mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 2.5GHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 70hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 25mA |
| Collector Emitter Voltage Max | 15V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1056522/)

**BFS17P** 

## **NPN Silicon RF Transistor** 

• For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • Pb-free (RoHS compliant) package 

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**ESD** ( **E** lectro **s** tatic **d** ischarge) sensitive device, observe handling precaution! 

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|||||||
|---|---|---|---|---|---|
|Type|Marking|Pin Configuration|Package|
|BFS17P|MCs|1 = B|2 = E|3 = C|SOT23|
|a|
|Maximum Ratings|at|T|A = 25 °C, unless otherwise specified|
|Parameter|Symbol|Value|Unit|
|ee|eee|
|Collector-emitter voltage|V|CEO|15|V|
|ee eee|
|Collector-base voltage|V|CBO|25|
|ee|ee|
|Emitter-base voltage|V|EBO|2.5|
|ee|eee|
|Collector current|I|C|25|mA|
|ee ee|
|Peak collector current|eee|I|CM|50|
|Total power dissipation|[1)]|P|tot|280|mW|
|T|S|≤ 55 °C|||
|Junction temperature|Pf|T|J|150|°C|
|Ambient temperature|T|A|-65 ... 150|
|ee|eee|
|Storage temperature|ee|T|Stg|eee|-65 ... 150|
|Thermal Resistance|
|Parameter|Symbol|Value|Unit|
|Junction - soldering point|[2)]|R|thJS|≤ 340|K/W|
|—|

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> 1 _T_ S is measured on the collector lead at the soldering point to the pcb 

> 2For calculation of _R_ thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 

2011-07-20 

1 

**BFS17P** 

## **Electrical Characteristics** at _T_ A = 25°C, unless otherwise specified 

|**Electrical Characteristics**at_T_A= 25°C,unless o|therwise s|pecified|pecified|pecified||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**DC Characteristics**||||||
|Collector-emitter breakdown voltage<br>_I_C= 1 mA,_I_B= 0|_V_(BR)CEO|15|-|-|V|
|Collector-base cutoff current<br>_V_CB= 10 V,_I_E= 0<br>_V_CB= 25 V,_I_E= 0|_I_CBO|-<br>-|-<br>-|0.05<br>10|µA|
|Emitter-base cutoff current<br>_V_EB= 2.5 V,_I_C= 0|_I_EBO|-|-|100||
|DC current gain<br>_I_C= 2 mA,_V_CE= 1 V, pulse measured<br>_I_C= 25 mA,_V_CE= 1 V, pulse measured|_h_FE|40<br>20|-<br>70|150<br>-|-|
|Collector-emitter saturation voltage<br>_I_C= 10 mA,_I_B= 1 mA|_V_CEsat|-|0.1|0.4|V|



2011-07-20 

2 

**BFS17P** 

**Electrical Characteristics** at _T_ ~~A~~ = 25°C, unless otherwise specified 

|**Electrical Characteristics**at_T_~~A~~ =25°C, unless o|therwise s|pecified|pecified|pecified||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**AC Characteristics**(verified byrandom sampling)||||||
|Transition frequency<br>_I_C= 2 mA,_V_CE= 5 V,_f_= 200 MHz<br>_I_C= 25 mA,_V_CE= 5 V,_f_= 200 MHz|_f_T|1<br>1.3|1.4<br>2.5|-<br>-|GHz|
|Collector-base capacitance<br>_V_CB= 5 V,_f_= 1 MHz,_V_BE= 0 ,<br>emitter grounded|_C_cb|-|0.55|0.8|pF|
|Collector emitter capacitance<br>_V_CE= 5 V,_f_= 1 MHz,_V_BE= 0 ,<br>base grounded|_C_ce|-|0.27|-||
|Emitter-base capacitance<br>_V_EB= 0.5 V,_f_= 1 MHz,_V_CB= 0 ,<br>collector grounded|_C_eb|-|0.9|1.45||
|Minimum noise figure<br>_I_C= 2 mA,_V_CE= 5 V,_Z_S= 50Ω,<br>_f_= 800 MHz|_NF_min|-|3.5|5|dB|
|Transducer gain<br>_I_C= 20 mA,_V_CE= 5 V,_Z_S=_Z_L= 50Ω,<br>_f_= 500 MHz||_S_21e|2|-|13|-|dB|
|Third order intercept point at output<br>_V_CE= 5 V,_I_C= 20 mA,_f_= 800 MHz,<br>_Z_S=_Z_Sopt,_Z_L=_Z_Lopt|_IP_3|-|21.5|-|dBm|
|1dB compression point<br>_I_C= 20 mA,_V_CE= 5 V,_Z_S=_Z_L= 50Ω,<br>_f_= 800 MHz|_P_-1dB|-|10|-|-|



2011-07-20 

3 

**BFS17P** 

## **Total power dissipation** _P_ tot = ƒ( _T_ S) 

## **Permissible Pulse Load** _R_ thJS =  ƒ( _t_ p) 

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10 3<br>320<br>mW<br>K/W<br>240<br>200<br>160 10 2<br>0.5<br>0.2<br>120 0.1<br>0.05<br>0.02<br>80 0.01<br>0.005<br>D = 0<br>40<br>0 10 1<br>0 15 30 45 60 75 90 105 120 °C 150 10  [-7 ] 10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>T S t p<br>tot thJS<br>P R<br>**----- End of picture text -----**<br>


## **Permissible Pulse Load** 

_P_ totmax/ _P_ totDC =  ƒ( _t_ p) 

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10 2<br>-<br>D = 0<br>0.005<br>0.01<br>0.02<br>10 1  0.05<br>0.1<br>0.2<br>0.5<br>10 0<br>10  [-7 ] 10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>t<br>p<br>totDC<br>/ P totmax<br>P<br>**----- End of picture text -----**<br>


**Collector-base capacitance** _C_ cb = ƒ( _V_ CB) **Emitter-base capacitance** _C_ eb = ƒ( _V_ EB) _f_ = 1 MHz 

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1.2<br>pF<br>1<br>0.9<br>0.8<br>0.7<br>CEB<br>0.6<br>0.5 CCB<br>0.4<br>0.3<br>0.2<br>0.1<br>0<br>0 2 4 6 8 10 12 14 16 V 20<br>V CB,  V EB<br>EB<br>C<br>,<br>CB<br>C<br>**----- End of picture text -----**<br>


2011-07-20 

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**BFS17P** 

## **Transition frequency** _f_ T= ƒ( _I_ C) 

_V_ CE = parameter 

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3<br>10V<br>GHz<br>5V<br>3V<br>2<br>2V<br>1.5<br>1<br>1V<br>0.5<br>0.7V<br>0<br>0 5 10 15 20 mA 30<br>I C<br>f T<br>**----- End of picture text -----**<br>


2011-07-20 

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**Package SOT23** 

**BFS17P** 

## Package Outline 

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1±0.1<br>2.9 ±0.1 0.1 MAX.<br>B<br>3<br>1 2<br>+0.1 1)<br>0.4 -0.05 A<br>C<br>0.95<br>1.9<br>0.25 M B C 0.2 M A<br>1) Lead width can be 0.6 max. in dambar area<br>0.8<br>0.8 1.2<br>Manufacturer<br>2005, June<br>EH s Date code (YM)<br>Pin 1 BCW66<br>Type code<br>0...8˚<br>0.08...0.15<br>0.15 MIN.<br> ±0.15 ±0.1<br>2.4 1.3<br>10˚ MAX. 10˚ MAX.<br>0.9<br>1.3<br>0.9<br>**----- End of picture text -----**<br>


Foot Print 

## Marking Layout (Example) 

## Standard Packing 

Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 

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4<br>0.9 0.2<br>Pin 1 3.15 1.15<br>2.13 2.65<br>8<br>**----- End of picture text -----**<br>


2011-07-20 

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**BFS17P** 

## **Edition 2009-11-16** 

**Published by Infineon Technologies AG 81726 Munich, Germany** 

##  **2009 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

2011-07-20 

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- [Supplier page](https://es.farnell.com/infineon/bfs17pe6327htsa1/rf-transistor-npn-sot-23/dp/1056522)
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