# Bipolar - RF Transistor, NPN, 9 V, 14 GHz, 210 mW, 35 mA, TSFP

![Product image](https://novapart.co/image/farnell:2617419/)

**URL**: https://novapart.co/products/BFR360FH6765XTSA1/bipolar-rf-transistor-npn-9-v-14-ghz-210-mw-35-ma
**SKU**: BFR360FH6765XTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar RF Transistors
**Price**: €0.0510
**Stock**: 10+
**Lead Time**: 358 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:9V; Transition Frequency ft:14GHz; Power Dissipation Pd:210mW; DC Collector Current:35mA; DC Current Gain hFE:120hFE; RF

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 210mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 14GHz |
| Transistor Case Style | TSFP |
| Dc Current Gain Hfe Min | 120hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 35mA |
| Collector Emitter Voltage Max | 9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2617419/)

**BFR360F** 

## **NPN Silicon RF Transistor** 

- Low noise amplifier for low current applications 

- Collector design supports 5V supply voltage 

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- For oscillators up to 3.5 GHz 

- Low noise figure 1.0 dB at 1.8 GHz 

- Pb-free (RoHS compliant) package 

- Qualified according AEC Q101 

## **ESD** ( **E** lectro **s** tatic **d** ischarge) sensitive device, observe handling precaution! 

|**Maximum Ratings**at_T_A= 25 °C, unless otherwise specified|= 25 °C, unless otherwise specified|= 25 °C, unless otherwise specified||
|---|---|---|---|
|**Parameter**|**Symbol**<br>~~es~~<br>ee|**Value**<br>~~es~~<br>eee|**Unit**|
|Collector-emitter voltage|_V_CEO<br>ee<br>ee|6<br>eee<br>eee|V|
|Collector-emitter voltage|_V_CES<br>ee <br>ee<br>ee|15<br> eee<br>eee<br>eee||
|Collector-base voltage|_V_CBO<br>ee <br>ee|15<br> eee<br>eee||
|Emitter-base voltage|_V_EBO<br>ee <br>eee|2<br> eee<br>eee||
|Collector current|_I_C<br>a eee<br>ee|35<br>eee<br>eee|mA|
|Base current|_I_B<br>ee|4<br>eee||
|Total power dissipation1)<br>_T_S ≤98°C|_P_tot<br>ee <br>ee|210<br> eee<br>eee|mW|
|Junction temperature|_T_J<br>ee<br>ee|150<br>eee<br>ee|°C|
|Storage temperature|_T_Stg<br>ee <br>ee|-55 ... 150<br> eee<br>ee||



> 1 _T_ S is measured on the collector lead at the soldering point to the pcb 

> 2For calculation of _R_ thJA please refer to Application Note AN077 Thermal Resistance 

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**BFR360F** 

## **Electrical Characteristics** at _T_ A = 25°C, unless otherwise specified 

|**Electrical Characteristics**at_T_A= 25°C,unless o|therwise s|pecified|pecified|pecified||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**DC Characteristics**||||||
|Collector-emitter breakdown voltage<br>_I_C= 1 mA,_I_B= 0|_V_(BR)CEO|6|9|-|V|
|Collector-emitter cutoff current<br>_V_CE= 4 V,_V_BE= 0<br>_V_CE= 10 V,_V_BE= 0,_T_A= 85°C<br>Verified by random sampling|_I_CES|-<br>-|1<br>2|30<br>50|nA|
|Collector-base cutoff current<br>_V_CB= 4 V,_I_E= 0|_I_CBO|-|1|30||
|Emitter-base cutoff current<br>_V_EB= 1 V,_I_C= 0|_I_EBO|-|1|500||
|DC current gain<br>_I_C= 15 mA,_V_CE= 3 V, pulse measured|_h_FE|90|120|160|-|



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**BFR360F** 

|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**AC Characteristics**(verified by random sampling)||||||
|Transition frequency<br>_I_C= 15 mA,_V_CE= 3 V,_f_= 1 GHz|_f_T|11|14|-|GHz|
|Collector-base capacitance<br>_V_CB= 5 V,_f_= 1 MHz,_V_BE= 0 ,<br>emitter grounded|_C_cb|-|0.32|0.5|pF|
|Collector emitter capacitance<br>_V_CE= 5 V,_f_= 1 MHz,_V_BE= 0 ,<br>base grounded|_C_ce|-|0.2|-||
|Emitter-base capacitance<br>_V_EB= 0.5 V,_f_= 1 MHz,_V_CB= 0 ,<br>collector grounded|_C_eb|-|0.4|-||
|Minimum noise figure<br>_I_C= 3 mA,_V_CE= 3 V,_Z_S=_Z_Sopt,<br>_f_= 1.8 GHz|NFmin|-|1|-|dB|
|Power gain, maximum available1)<br>_I_C= 15 mA,_V_CE= 3 V,_Z_S=_Z_Sopt,_Z_L=_Z_Lopt,<br>_f_= 1.8 GHz<br>_f_= 3 GHz|_G_ma|-<br>-|15.5<br>11|-<br>-||
|Transducer gain<br>_I_C= 15 mA,_V_CE= 3 V,_Z_S=_Z_L= 50Ω,<br>_f_= 1.8 GHz<br>_f_= 3 GHz||_S_21e|2|-<br>-|13<br>9|-<br>-|dB|
|Third order intercept point at output2)<br>_V_CE= 3 V,_I_C= 15 mA,_f_= 1.8 GHz,<br>_Z_S=_Z_L= 50Ω|_IP_3|-|24|-|dBm|
|1dB compression point at output<br>_I_C= 15 mA,_V_CE= 3 V,_Z_S=_Z_L= 50Ω,<br>_f_= 1.8 GHz|_P_-1dB|-|9|-||



> 1 _G_ ma = | _S_ 21e / _S_ 12e| (k-(k²-1)1/2) 

2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 

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**BFR360F** 

**Total power dissipation** _P_ tot = ƒ( _T_ S) 

**Collector-base capacitance** _C_ cb= ƒ( _V_ CB) _f_ = 1MHz 

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240<br>mW<br>180<br>150<br>120<br>90<br>60<br>30<br>0<br>0 15 30 45 60 75 90 105 120 °C 150<br>T S<br>tot<br>P<br>**----- End of picture text -----**<br>


## **Third order Intercept Point** _IP_ 3=ƒ( _I_ C) (Output, ZS=ZL=50Ω) 

## _V_ CE = parameter, _f_ = 1.8GHz 

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0.8<br>pF<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0<br>0 2 4 6 8 10 12 V 16<br>V CB<br>cb<br>C<br>**----- End of picture text -----**<br>


## **Transition frequency** _f_ T= ƒ( _I_ C) 

_f_ = 1GHz 

## _V_ CE = parameter 

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30  17<br>GHz<br>dBm<br>14<br>5V<br>20  12<br>3V<br>10<br>15  2V<br>8<br>10<br>6V 1V<br>4V 6<br>3V 0.7V<br>5<br>2V<br>1V 4<br>0<br>2<br>-5 0<br>0 5 10 15 20 25 30 mA 40 0 5 10 15 20 25 30 mA 40<br>I C I C<br>3<br>IP f T<br>**----- End of picture text -----**<br>


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**BFR360F** 

**Power gain** _G_ ma, _G_ ms = ƒ( _I_ C) 

## _f_ = 0.9GHz 

## _V_ CE = parameter 

**Power gain** _G_ ma, _G_ ms =  ƒ( _I_ C) _f_ = 1.8GHz 

## _V_ CE = parameter 

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**----- Start of picture text -----**<br>
24  18<br>dB<br>5V<br>22  dB<br>5V<br>3V<br>21<br>2V 3V<br>20<br>14  2V<br>19<br>18<br>1V<br>17<br>12<br>1V<br>16<br>15  0.7V<br>10<br>14<br>0.7V<br>13<br>12  8<br>0 5 10 15 20 25 30 mA 40 0 5 10 15 20 25 30 mA 40<br>I C I C<br>G G<br>**----- End of picture text -----**<br>


**Power Gain** _G_ ma, _G_ ms =  ƒ( _f_ ) _V_ CE = parameter 

**Insertion Power Gain** | _S_ 21|² =  ƒ( _f_ ) _V_ CE = parameter 

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49<br>dB<br>Ic = 15mA<br>39<br>34<br>29<br>24<br>19<br>5V<br>14<br>2V<br>1V<br>9 0.7V<br>4<br>0 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5<br>f<br>G<br>**----- End of picture text -----**<br>


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36<br>dB<br>Ic = 15mA<br>28<br>5V<br>24  2V<br>1V<br>0.7V<br>20<br>16<br>12<br>8<br>4<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5<br>f<br>G<br>**----- End of picture text -----**<br>


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**BFR360F** 

**Power Gain** _G_ ma, _G_ ms =  ƒ( _V_ CE):  | _S_ 21|² =  ƒ( _V_ CE): - - - - 

_f_ = parameter 

**Power gain** _G_ ma, _G_ ms =  ƒ ( _I_ C) _V_ CE = 3V 

_f_ = parameter 

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**----- Start of picture text -----**<br>
24  22<br>dB 0.9GHz<br>dB Ic = 15mA 0.9GHz<br>19<br>20  0.9GHz<br>18<br>17<br>18<br>1.8GHz 16<br>15<br>16  1.8GHz<br>14<br>1.8GHz 13<br>14<br>12  2.4GHz<br>11<br>12<br>3GHz<br>10<br>10  9<br>4GHz<br>8<br>8 7<br>0 1 2 3 4 5 V 7 0 5 10 15 20 25 30 35 mA 45<br>V CE I C<br>G G<br>**----- End of picture text -----**<br>


**Noise figure** _NF_ =  ƒ ( _I_ C) _V_ CE = 3V, _f_ = 1,8 GHz 

**Noise figure** _F_ =  ƒ( _f_ ) _V_ CE = 3V, _Z_ S = _Z_ Sopt 

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3<br>dB<br>F50<br>2.4<br>2.2<br>2 NFmin<br>1.8<br>1.6<br>1.4<br>1.2<br>1<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 5 10 15 20 25 30 35 mA 45<br>I C<br>F<br>**----- End of picture text -----**<br>


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**BFR360F** 

## **Source impedance** for min. 

noise figure vs. frequency _V_ CE = 3 V 

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**----- Start of picture text -----**<br>
+j50<br>+j25 +j100<br>+j10<br>2.4GHz 1.8GHz<br>0.9GHz<br>3GHz<br>0<br>10 25 50 100<br>4GHz<br>3mA<br>-j10<br>15mA<br>-j25 -j100<br>-j50<br>**----- End of picture text -----**<br>


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**BFR360F** 

## **SPICE Parameter** 

For the SPICE model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. 

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**Package TSFP-3** 

**BFR360F** 

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**----- Start of picture text -----**<br>
Package Outline<br>1.2 ±0.05<br>0.2 ±0.05 0.55 ±0.04<br>3<br>1 2<br>0.2 ±0.05 0.15 ±0.05<br>0.4 [±0.05]<br>0.4 [±0.05]<br>Foot Print<br>0.4<br>0.4 0.4<br>Marking Layout (Example)<br>Manufacturer<br>BCR847BF<br>Pin 1<br>Type code<br>Standard Packing<br>Reel ø180 mm = 3.000 Pieces/Reel<br>Reel ø330 mm = 10.000 Pieces/Reel<br>4<br>0.3 0.2<br>Pin 1 1.35 0.7<br>±0.05<br>0.8<br>±0.05 ±0.05<br>10˚ MAX.<br>1.2 0.2<br>0.45<br>1.05<br>1.2 1.5<br>8<br>**----- End of picture text -----**<br>


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**BFR360F** 

## **Datasheet Revision History: 20 May 2010** 

This datasheet replaces the revision from 30 March 2007. 

The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated. 

|This datasheet replaces the revision from 30 March 2007.<br>The product itself has not been changed and the device characteristics remain unchanged.<br>Only the product description and information available in the datasheet has been expanded<br>and updated.|This datasheet replaces the revision from 30 March 2007.<br>The product itself has not been changed and the device characteristics remain unchanged.<br>Only the product description and information available in the datasheet has been expanded<br>and updated.|
|---|---|
|**Previous Revision: 30 March 2007**||
|**Page **|**Subject(changes since last revision)**|
|1|Datasheethasfinalstatus|
|1|Max. ratings refer to 25°C|
|1|Max. rating for TAremoved|
|1|Lower max. rating for storage temperature TStgchanged|
|2|Typical values for leakage currents included, maximum leakage current values<br>reduced|
|6|Characteristic curve for NFmin vs. frequency included|



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**BFR360F** 

## **Edition 2009-11-16** 

**Published by Infineon Technologies AG 81726 Munich, Germany** 

##  **2009 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( <www.infineon.com>). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

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