# Bipolar - RF Transistor, NPN, 6 V, 14 GHz, 60 mW, 10 mA, TSLP
**URL**: https://novapart.co/products/BFR340L3E6327XTMA1/bipolar-rf-transistor-npn-6-v-14-ghz-60-mw-10-ma
**SKU**: BFR340L3E6327XTMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar RF Transistors
**Price**: €0.1040
**Stock**: 10+
**Lead Time**: 64 days (indicative)
## Description
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:6V; Transition Frequency ft:14GHz; Power Dissipation Pd:60mW; DC Collector Current:10mA; DC Current Gain hFE:90hFE; RF Tran
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 60mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 14GHz |
| Transistor Case Style | TSLP |
| Dc Current Gain Hfe Min | 90hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 10mA |
| Collector Emitter Voltage Max | 6V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2480681/)
## **BFR340L3**
## **Low profile silicon NPN RF bipolar transistor**
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## **Product description**
The BFR340L3 is a low noise device based on Si that is part of Infineon’s established third generation RF bipolar transistor family. Its transition frequency _f_ T of 14 GHz, low current and low voltage characteristics make the device suitable for low current amplifiers. It remains cost competitive without compromising on ease of use.
## **Feature list**
- Minimum noise figure _NF_ min = 1.15 dB at 1.8 GHz, 3 V, 1 mA
- High gain _G_ ms = 17.5 dB at 1.8 GHz, 3 V, 5 mA
- _OIP_ 3 = 12.5 dBm at 1.8 GHz, 3 V, 5 mA
## **Product validation**
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
## **Potential applications**
- Low noise amplifiers (LNAs) for FM and AM radio
- LNAs for sub-1 GHz ISM band applications
## **Device information**
|**Table 1**
**Part information**|||||||
|---|---|---|---|---|---|---|
|**Product name / Ordering code**|**Package**|**Pin configuration**|||**Marking**|**Pieces / Reel**|
|BFR340L3 / BFR340L3E6327XTMA1|TSLP-3-1|1 = B|2 = E|3 = C|FA|15000|
_**Attention** :_ _**ESD (Electrostatic discharge) sensitive device, observe handling precautions**_
Please read the Important Notice and Warnings at the end of this document
Datasheet **www.infineon.com**
Revision 2.0 2019-01-25
**BFR340L3 Low profile silicon NPN RF bipolar transistor**
**==> picture [105 x 47] intentionally omitted <==**
## **Table of contents**
## **Table of contents**
||**Product description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|---|---|
||**Feature list**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Device information**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|**1**|**Absolute maximum ratings**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3|
|**2**|**Thermal characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4|
|**3**|**Electrical characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|3.1|DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|3.2|General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|3.3|Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6|
|**4**|**Package information TSLP-3-1**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
Datasheet
Revision 2.0 2019-01-25
2
**BFR340L3 Low profile silicon NPN RF bipolar transistor**
**==> picture [105 x 47] intentionally omitted <==**
## **Absolute maximum ratings**
## **1 Absolute maximum ratings**
|**Table 2**
**Absolute maximum ratings at****_T_A**|**Table 2**
**Absolute maximum ratings at****_T_A**|**= 25 °C (unless otherwise specified)**|**= 25 °C (unless otherwise specified)**|**= 25 °C (unless otherwise specified)**|**= 25 °C (unless otherwise specified)**|
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**||**Unit**|**Note or test condition**|
|||**Min.**|**Max.**|||
|Collector emitter voltage|_V_CEO|–|6|V|Open base|
|Collector emitter voltage|_V_CES||15||E-B short circuited|
|Collector base voltage|_V_CBO||15||Open emitter|
|Emitter base voltage|_V_EBO||2||Open collector|
|Base current|_I_B||2|mA|–|
|Collector current|_I_C||10|||
|Total power dissipation**_1)_**|_P_tot||60|mW|_T_S≤ 120 °C|
|Junction temperature|_T_J||150|°C|–|
|Storage temperature|_T_Stg|-55||||
_**Attention** :_ _**Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit.**_
> 1 _T_ S is the soldering point temperature. Datasheet
_T_ S is the soldering point temperature. _T_ S is measured on the emitter lead at the soldering point of the PCB.
Revision 2.0 2019-01-25
3
**BFR340L3 Low profile silicon NPN RF bipolar transistor**
**==> picture [105 x 47] intentionally omitted <==**
## **Thermal characteristics**
## **2 Thermal characteristics**
## **Table 3**
## **Thermal resistance**
**==> picture [512 x 508] intentionally omitted <==**
**----- Start of picture text -----**
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Junction - soldering point R thJS – 500 – K/W –
70
mW
50
40
30
20
10
0
0 15 30 45 60 75 90 105 120 °C 150
T S
tot
P
**----- End of picture text -----**
**Figure 1 Total power dissipation** _**P**_ **tot = f(** _**T**_ **S)**
Datasheet
Revision 2.0 2019-01-25
4
**BFR340L3 Low profile silicon NPN RF bipolar transistor**
**==> picture [105 x 47] intentionally omitted <==**
## **Electrical characteristics**
## **3 Electrical characteristics**
## **3.1 DC characteristics**
## **DC characteristics at** _**T**_ **A = 25 °C (unless otherwise specified)**
||||||||
|---|---|---|---|---|---|---|
|**Table 4**
**DC characteristics at****_T_A = 25 °C (u**||**nless otherwise specified)**|||||
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Collector emitter breakdown voltage|_V_(BR)CEO|6|9|–|V|_I_C= 1 mA,_I_B= 0,
open base|
|Collector emitter leakage current|_I_CES|–|–|10**_2)_**|μA|_V_CE= 15 V,_V_BE= 0,
E-B short circuited|
|Collector base leakage current|_I_CBO|||100**_2)_**|nA|_V_CB= 5 V,_I_E= 0,
open emitter|
|Emitter base leakage current|_I_EBO|||1**_2)_**|μA|_V_EB= 1 V,_I_C= 0,
open collector|
|DC current gain|_h_FE|90|120|160||_V_CE= 3 V,_I_C= 5 mA,
pulse measured|
## **3.2 General AC characteristics**
**Table 5 General AC characteristics at** _**T**_ **A = 25 °C**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note or test condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Transition frequency|_f_T|10|14|–|GHz|_V_CE= 3 V,_I_C= 6 mA,
_f_= 1 GHz|
|Collector base capacitance|_C_CB|–|0.17|0.4|pF|_V_CB= 5 V,_V_BE= 0,
_f_= 1 MHz,
emitter grounded|
|Collector emitter capacitance|_C_CE||0.13|–||_V_CE= 5 V,_V_BE= 0,
_f_= 1 MHz,
base grounded|
|Emitter base capacitance|_C_EB||0.12|||_V_EB= 0.5 V,_V_CB= 0,
_f_= 1 MHz,
collector grounded|
> 2 Maximum values not limited by the device but by the short cycle time of the 100% test.
Datasheet
Revision 2.0 2019-01-25
5
**BFR340L3 Low profile silicon NPN RF bipolar transistor**
**==> picture [105 x 47] intentionally omitted <==**
## **Electrical characteristics**
## **3.3 Frequency dependent AC characteristics**
Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, _T_ A = 25 °C.
**==> picture [301 x 101] intentionally omitted <==**
**----- Start of picture text -----**
3
VB VC
Bias-T
RF-Out Out
Bias-T
In RF- GND
In
1 2
**----- End of picture text -----**
**Figure 2 Testing circuit**
|**Figure 2**
**Testing circuit**|**Figure 2**
**Testing circuit**|**Figure 2**
**Testing circuit**|||||
|---|---|---|---|---|---|---|
|**Table 6**
**AC characteristics,****_V_CE = 3 V,****_f_ = 1.8 GHz**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note or test condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Power gain
•
Maximum power gain
•
Transducer gain|_G_ms
|_S_21|2|–|17.5
14|–|dB|_I_C= 5 mA|
|Noise figure
•
Minimum noise figure|_NF_min||1.15|||_I_C= 1 mA|
|Linearity
•
3rd order intercept point at output
•
1 dB gain compression point at output|_OIP_3
_OP_1dB||12.5
-1||dBm|_I_C= 5 mA,_Z_S_= Z_L= 50 Ω|
|**Table 7**
**AC characteristics,****_V_CE = 3 V,****_f_ = 3 GHz**|**Table 7**
**AC characteristics,****_V_CE = 3 V,****_f_ = 3 GHz**|**Table 7**
**AC characteristics,****_V_CE = 3 V,****_f_ = 3 GHz**|**Table 7**
**AC characteristics,****_V_CE = 3 V,****_f_ = 3 GHz**|**Table 7**
**AC characteristics,****_V_CE = 3 V,****_f_ = 3 GHz**|**Table 7**
**AC characteristics,****_V_CE = 3 V,****_f_ = 3 GHz**|**Table 7**
**AC characteristics,****_V_CE = 3 V,****_f_ = 3 GHz**|
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Power gain
•
Maximum power gain
•
Transducer gain|_G_ma
|_S_21|2|–|13
10|–|dB|_I_C= 5 mA|
_Note: G_ ms _= IS_ 21 _/ S_ 12 _I for k < 1; G_ ma _= IS_ 21 _/ S_ 12 _I(k-(k_[2] _-1)_[1/2] _) for k > 1. In order to get the NF_ min _values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP_ 3 _value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50_ Ω _from 0.1 MHz to 6 GHz._
Datasheet
Revision 2.0 2019-01-25
6
**BFR340L3 Low profile silicon NPN RF bipolar transistor**
## **Package information TSLP-3-1**
## **4 Package information TSLP-3-1**
## **Figure 3 Package outline**
**Figure 4 Foot print**
**Figure 5 Marking layout example**
## **Figure 6 Tape information**
_Note: See our_ _**Recommendations for Printed Circuit Board Assembly of TSLP/TSSLP/TSNP Packages** . The marking layout is an example. For the real marking code refer to the device information on the first page. The number of characters shown in the layout example is not necessarily the real one. The marking layout can consist of less characters._
Datasheet
Revision 2.0 2019-01-25
7
**BFR340L3 Low profile silicon NPN RF bipolar transistor**
**==> picture [105 x 47] intentionally omitted <==**
## **Revision history**
## **Revision history**
|**Document**
**version**|**Date of**
**release**|**Description of changes**|
|---|---|---|
|Revision 2.0|2019-01-25|New datasheet layout.|
Datasheet
Revision 2.0 2019-01-25
8
## **Trademarks**
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**Edition 2019-01-25 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”) . **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding the **© 2019 Infineon Technologies AG** application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of **All Rights Reserved.** any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury
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