# Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 250 mW, 35 mA, SOT-23

![Product image](https://novapart.co/image/farnell:2443524/)

**URL**: https://novapart.co/products/BFR182E6327HTSA1/bipolar-rf-transistor-npn-12-v-8-ghz-250-mw-35-ma
**SKU**: BFR182E6327HTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar RF Transistors
**Price**: €0.1240
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:250mW; DC Collector Current:35mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 250mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 8GHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 35mA |
| Collector Emitter Voltage Max | 12V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2443524/)

SIEMENS 

BFR 182 

## NPN Silicon RF Transistor 

- ¢ For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA 

- fy = BGHz F = 1.2dB at 900MHz 

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3<br>a<br><<br>we me<br>SyZA<br>\ YPS051 61<br>**----- End of picture text -----**<br>


ESD: Electrostatic discharge sensitive device, observe handling precaution! 

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||||
|---|---|---|
|Type|Package|
|BFR|182|SOT-23|

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|||||||
|---|---|---|---|---|---|
|Maximum|Ratings|
|Parameter|symboi|||[Values]|[[Unit]|
|Collector-emitter|voltage|12|Vv|
|Collector-emitter|voltage|20|
|Collector-base|voltage|20|
|Emitter-base|voltage|2|
|“Collectorcurrent|mA|
|TotalBase currentpower|dissipation|Csa|mw|
|Junction|temperature|150|°C|
|Ambient|temperature|-|65|...+|150|
|Storage|temperature|-|65...|+|150|
|Thermal|Resistance|
|Junction|- soldering point|1)|[Finis _||< 230|[Kw|

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1) Tg is measured on the collector lead at the soldering point to the pcb. 

Semiconductor Group 

1371 

09.96 

SIEMENS 

BFR 182 

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|||||||||
|---|---|---|---|---|---|---|---|
|Electrical|Characteristics|at|T, =|25°C,|unless|otherwise|specified.|
|||[min|typ.max.|
|DC|Characteristics|
|Collector-emitter|breakdown|voltage|ViBryCcEO|Vv|
|Collector-emitter|cutoff current|loes|yA|
|Collector-base|cutoff|current|IcBo|nA|
|Emitter-base cutoff current|feof|pA|
|DC current gain|rel|:|

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Semiconductor Group 

1372 

09.96 

BFR 182 

## SIEMENS 

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Electrical Characteristics at T, = 25°C, unless otherwise specified.<br>Parameter Values Unit<br>_ | min typ. [[max]<br>AC Characteristics<br>Transition frequency fr GHz<br>Collector-baseVop= 10 V, Vee capacitance = tbe = 0, f= 1 MHz coCob toe0.33  _| pF<br>Collector-emitterVoge= 10 V, Vee capacitance= Vbe = 0, f= 1 MHz m@ | ol0.2 ||<br>Emitter-base capacitanceVeg= 0.5 V, Vog= Vb= 0, f=1MHz |e<br>Noise figure F dB<br>Io=3MA, VoE= 8 V, Zg = Sgopt<br>f= 900 MHz<br>f= 1.8 GHz<br>Power gain 2) Gma<br>Ig = 10 MA, Vee = 8 V, Zs = Zgop1<br>a= ZLopt<br>f= 900 MHz 17.5<br>f= 1.8 GHz 11.5<br>Transducer gain 1Sot¢l?<br>lo = 10 MA, Voge= 8 V, Zyg =2Z,= 0 2<br>f= 900 MHz 14.5<br>f= 1.8 GHz 9<br>**----- End of picture text -----**<br>


2) Gna = 1S21/Syal (-(k?-1)"/2) 

Semiconductor Group 

1373 

09.96 

BFR 182 

## SIEMENS 

## SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : 

|Transistor Chip Data|Transistor Chip Data||||||||
|---|---|---|---|---|---|---|---|---|
|IS=|4.8499|fA|BF=|84.113|-|NF=|0.56639|—_-|
|VAF=|21.742|Vv|IKF =|0.14414|A|ISE=|8.4254|fA|
|NE =|0.91624|-|BR =|10.004|-|NR =|0.54818|-|
|VAR =|2.2595|Vv|IKR =|0.03978|A|ISC =|§.9438|fA|
|NC =|0.5641|-|RB =|2.8263|Q|IRB =|0.071955|mA|
|RBM =|3.4217|Q|RE =|2.1858|Q|RC =|1.8159|Q|
|CJE =|8.8619|fF|VWE=|1.0378|Vv|MJE =|0.40796|-|
|TF =|22.72|ps|XTF =|0.43147|-|VIF=|0.34608|V|
|ITF =|6.5523|mA|PTF =|0|deg|CJC =|490.25|fF|
|VJC =|1.0132|Vv|MJC =|0.31068|-|XCJC=|0.19281|-|
|TR=|1.7541|ns|CJS =|0|fF|VJS =|0.75|Vv|
|MJS =|0|:|XTB =|O|-|EG =|1.14|eV|
|XTI =|3|-|FC =|0.64175|-|TNOM|300|K|
|All parameters are ready to||use, no scaling is necessary.|||||||
|Extracted on behalfofSIEMENS Small Signal Semiconductors|||||by:||||
|Institut ftir Mobil-und Satellitenfunktechnik (IMST)|||||||||
|© 1996 SIEMENS AG|||||||||
|Package|Equivalent Circuit:||||||||
|||||||LBI =|0.85|nH|
||||beg|||LBO =|0.51|nH|
||—_—_———|+-__—-|||||LEl=|0.69|nH|
||qT"||F’<br>be|y"||LCO **=**<br>CBE<br>CCB =|0.49<br>73<br>84|nH<br>fF<br>fF|
|||||||CCE =|165|fF|
||||Leo||||||
||||||EHAQT222||||
|||||||Validupto6GHz|||



For examples and ready to use parameters please contact your focal Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://Awww.siemens.de/Semiconductor/products/35/357.htm 

Semiconductor Group 

1374 

09.96 

BFR 182 

## SIEMENS 

## Total power dissipation Pig, = f(Ta*, Ts) 

* Package mounted on epoxy 

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Permissible Pulse Load Pulse Load Load Piotmax/Protoc = = F (fp) 

Semiconductor Group 

1375 

09.96 

SIEMENS 

BFR 182 

Collector-base capacitance C,p = f (Vcp) VBE= “Ye= 0, f= 1MHz 

## Transition frequency f; = f (ic) 

Voce = Parameter 

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Power Gain Gma, Gms = Alc) f=0.9GHz Voge = Parameter 

Power Gain Gma, Gms = Kilc) f= 1.8GHz 

Voge = Parameter 

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Semiconductor Group 

1376 

09.96 

BFR 182 

## SIEMENS 

Power Gain Gain Gma, Gms = = 4Vce): 1Sp4l2 = = KVog—)i--- 

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Power Gain Gain Gma, Gms = = 4Vce): Intermodulation Intercept Point /P3=f(/c)<br>1Sp4l2 = = KVog—)i--- (3rd order, Output, Z,=2Z =500)<br>Parameter Vcr = Parameter, f= 900MHz<br>MT201201 =10mA 30TeI<br>5<br>|_| 0.9GH2 pom AA sy<br>at T<br>re _fe<br>14 [[0.9GHz]] yy,<br>— [[—~]] pe<br>oo 1.8GHz fren{| 4v<br>eee AY<br>8 7 5<br>etTyTy _ _ of _<br>ty) 2 4 6 8 vo 12 0 5 10 15 Vv 25<br>——m Vor ——m Veg<br>Power Gain Gma, Gms= Gms== Kf Power Gain |S54/2= Af<br>= Parameter Vcore = Parameter<br>32<br>ml pF | | mi pF |ft<br>co why | tT TTTg IA |<br>a \ WES<br>7 WEE wR<br>START A<br>12 aNei P |__| 8NWx. |<br>“TRY 7 Sa<br>a po | 10V. 4 ps _| |<br>a_ SSS SSE mia<br>ftTo) oa | | tf | !<br>: 00 OF 10 15 20 25 GHz 35 00 05 #10 15 20 25 GHz 35<br>——p f oe ff<br>**----- End of picture text -----**<br>


f= Parameter 

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Power Gain Gma, Gms= Gms== Kf 

Voge = Parameter 

Semiconductor Group 

1377 

09.96 



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