# Bipolar - RF Transistor, NPN, 15 V, 5.5 GHz, 1 W, 120 mA, SOT-89

![Product image](https://novapart.co/image/farnell:2726101RL/)

**URL**: https://novapart.co/products/BFQ19SH6327XTSA1/bipolar-rf-transistor-npn-15-v-55-ghz-1-w-120-ma
**SKU**: BFQ19SH6327XTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar RF Transistors
**Price**: €0.1820
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:5.5GHz; Power Dissipation Pd:1W; DC Collector Current:120mA; DC Current Gain hFE:70hFE; RF

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 5.5GHz |
| Transistor Case Style | SOT-89 |
| Dc Current Gain Hfe Min | 70hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 120mA |
| Collector Emitter Voltage Max | 15V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726101RL/)

**BFQ19S** 

## **Low Noise Silicon Bipolar RF Transistor** 

• For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz 

**==> picture [126 x 34] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>2<br>3<br>2<br>**----- End of picture text -----**<br>


at collector currents from 10 mA to 70 mA 

- Pb-free (RoHS compliant) package 

- Qualification report according to AEC-Q101 available 

**ESD** ( **E** lectro **s** tatic **d** ischarge) sensitive device, observe handling precaution! 

**Type Marking Pin Configuration Package** BFQ19S FG 1 = B 2 = C 3 = E SOT89 ~~ToT~~ **Maximum Ratings** at _T_ A = 25 °C, unless otherwise specified **Parameter** ~~ee~~ **Symbol Value Unit** Collector-emitter voltage es _V_ CEO 15 V Collector-emitter voltage es _V_ CES 20 Collector-base voltage _V_ CBO 20 ee ee Emitter-base voltage _V_ EBO 3 ee eee Collector current _I_ C 120 mA ee ee Base current es _I_ B 12 Total power dissipation[1)] _P_ tot 1 W _T_ S ≤ 85°C | Junction temperature _T_ J 150 °C ee ee Ambient temperature _T_ A -65 ... 150 ee eee Storage temperature ee _T_ Stg -65 ... 150 ee **Thermal Resistance Parameter Symbol Value Unit** > Junction - soldering point[2)] _R_ thJS 65 K/W 

> 1 _T_ S is measured on the collector lead at the soldering point to the pcb 

> 2For the definition of _R_ thJS please refer to Application Note AN077 (Thermal Resistance Calculation) 

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**BFQ19S** 

## **Electrical Characteristics** at _T_ A = 25 °C, unless otherwise specified 

|**Electrical Characteristics**at_T_A= 25 °C,unless|otherwise|specified|specified|specified||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**DC Characteristics**||||||
|Collector-emitter breakdown voltage<br>_I_C= 1 mA,_I_B= 0|_V_(BR)CEO|15|-|-|V|
|Collector-emitter cutoff current<br>_V_CE= 20 V,_V_BE= 0|_I_CES|-|-|10|µA|
|Collector-base cutoff current<br>_V_CB= 10 V,_I_E= 0|_I_CBO|-|-|100|nA|
|Emitter-base cutoff current<br>_V_EB= 2 V,_I_C= 0|_I_EBO|-|-|100|µA|
|DC current gain<br>_I_C= 70 mA,_V_CE= 8 V,pulse measured|_h_FE|70|100|140|-|



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**BFQ19S** 

|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**AC Characteristics**(verified by random sampling)||||||
|Transition frequency<br>_I_C= 70 mA,_V_CE= 8 V,_f_= 500 MHz|_f_T|4|5.5|-|GHz|
|Collector-base capacitance<br>_V_CB= 10 V,_f_= 1 MHz,_V_BE= 0 ,<br>emitter grounded|_C_cb|-|1.05|1.35|pF|
|Collector emitter capacitance<br>_V_CE= 10 V,_f_= 1 MHz,_V_BE= 0 ,<br>base grounded|_C_ce|-|0.4|-||
|Emitter-base capacitance<br>_V_EB= 0.5 V,_f_= 1 MHz,_V_CB= 0 ,<br>collector grounded|_C_eb|-|3.9|-||
|Minimum noise figure<br>_I_C= 20 mA,_V_CE= 6 V,_Z_S=_Z_Sopt,<br>_f_= 900 MHz<br>_f_= 1.8 GHz|_NF_min|-<br>-|1.8<br>3|-<br>-|dB|
|Power gain, maximum available1)<br>_I_C= 70 mA,_V_CE= 8 V,_Z_S=_Z_Sopt,_Z_L=_Z_Lopt,<br>_f_= 900 MHz<br>_f_= 1.8 GHz|_G_ma|-<br>-|11.5<br>7|-<br>-||
|Transducer gain<br>_I_C= 30 mA,_V_CE= 8 V,_Z_S=_Z_L= 50Ω,<br>_f_= 900 MHz<br>_f_= 1.8 GHz||_S_21e|2|-<br>-|9.5<br>4|-<br>-|dB|
|Third order intercept point at output2)<br>_V_CE= 8 V,_I_C= 70 mA,_Z_S=_Z_Sopt,_Z_L=_Z_Lopt,<br>_f_= 1.8 GHz|_IP_3|-|32|-|dBm|
|1dB Compression point<br>_V_CE= 8 V,_I_C= 70 mA,_Z_S=_Z_Sopt,_Z_L=_Z_Lopt,<br>_f_= 1.8 GHz|_P_-1dB|-|22|-||



> 1Gma = |S21/S12| (k-(k2-1)1/2) 

> 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.2 MHz to 12 GHz 

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**BFQ19S** 

## **Total power dissipation** _P_ tot = ƒ( _T_ S) 

## **Permissible Pulse Load** _R_ thJS =  ƒ( _t_ p) 

**==> picture [488 x 273] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 2<br>1200<br>mW<br>1000<br>K/W<br>900<br>800<br>700<br>0.5<br>600 10 1  0.2<br>0.1<br>500 0.05<br>0.02<br>400 0.01<br>0.005<br>300 D = 0<br>200<br>100<br>0 10 0<br>0 20 40 60 80 100 120 °C 150 10  [-7 ] 10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br> T S t p<br>tot thJS<br>P R<br>**----- End of picture text -----**<br>


## **Permissible Pulse Load** 

_P_ totmax/ _P_ totDC =  ƒ( _t_ p) 

**==> picture [233 x 273] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 2<br>-<br>D = 0<br>0.005<br>0.01<br>10 1  0.02<br>0.05<br>0.1<br>0.2<br>0.5<br>10 0<br>10  [-7 ] 10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>t<br>p<br>totDC<br>/ P totmax<br>P<br>**----- End of picture text -----**<br>


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**BFQ19S** 

## **SPICE GP model** 

For the SPICE model as well as for S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. 

Please consult our website and download the latest versions before actually starting your design. 

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**Package SOT89** 

**BFQ19S** 

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**BFQ19S** 

## **Edition 2009-11-16** 

**Published by Infineon Technologies AG 81726 Munich, Germany** 

##  **2009 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

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