# Bipolar - RF Transistor, NPN, 4.5 V, 30 GHz, 250 mW, 80 mA, TSFP
**URL**: https://novapart.co/products/BFP540FESDH6327XTSA1/bipolar-rf-transistor-npn-45-v-30-ghz-250-mw-80-ma
**SKU**: BFP540FESDH6327XTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar RF Transistors
**Price**: €0.2370
**Stock**: 10+
**Lead Time**: 358 days (indicative)
## Description
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.5V; Transition Frequency ft:30GHz; Power Dissipation Pd:250mW; DC Collector Current:80mA; DC Current Gain hFE:50hFE; RF
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 250mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 30GHz |
| Transistor Case Style | TSFP |
| Dc Current Gain Hfe Min | 50hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 80mA |
| Collector Emitter Voltage Max | 4.5V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2480670/)
## **BFP540FESD**
## **Low profile robust silicon NPN RF bipolar transistor**
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## **Product description**
The BFP540FESD is a low noise device based on a grounded emitter (SIEGET[™] ) that is part of Infineon’s established fifth generation RF bipolar transistor family. Its high gain and ESD structure make the device suitable for applications that requires highly robustness and high performance. It remains cost competitive without compromising on ease of use.
## **Feature list**
- Minimum noise figure _NF_ min = 0.9 dB at 1.8 GHz, 2 V, 5 mA
- High gain _G_ ms = 20 dB at 1.8 GHz, 2 V, 20 mA
- _OIP_ 3 = 24.5 dBm at 1.8 GHz, 2 V, 20 mA
- High ESD robustness, typical 1 kV (HBM)
## **Product validation**
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
## **Potential applications**
- Radio-frequency oscillators such as local oscillator in LNB
- Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio
- LNAs for wireless communications such as cordless phones
## **Device information**
|**Table 1**
**Part information**||||||||
|---|---|---|---|---|---|---|---|
|**Product name / Ordering code**|**Package**|**Pin configuration**||||**Marking**|**Pieces / Reel**|
|BFP540FESD / BFP540FESDH6327XTSA1|TSFP-4-1|1 = B|2 = E|3 = C|4 = E|AUs|3000|
_**Attention** :_ _**ESD (Electrostatic discharge) sensitive device, observe handling precautions**_
Please read the Important Notice and Warnings at the end of this document
Datasheet **www.infineon.com**
Revision 2.0 2019-01-25
**BFP540FESD Low profile robust silicon NPN RF bipolar transistor**
**==> picture [105 x 47] intentionally omitted <==**
## **Table of contents**
## **Table of contents**
||**Product description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|---|---|
||**Feature list**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Device information**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|**1**|**Absolute maximum ratings**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3|
|**2**|**Thermal characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4|
|**3**|**Electrical characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|3.1|DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|3.2|General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|3.3|Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6|
|**4**|**Package information TSFP-4-1**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
Datasheet
Revision 2.0 2019-01-25
2
**BFP540FESD Low profile robust silicon NPN RF bipolar transistor**
**==> picture [105 x 47] intentionally omitted <==**
## **Absolute maximum ratings**
## **1 Absolute maximum ratings**
|**Table 2**
**Absolute maximum ratings at****_T_A**|**Table 2**
**Absolute maximum ratings at****_T_A**|**= 25 °C (unless otherwise specified)**|**= 25 °C (unless otherwise specified)**|**= 25 °C (unless otherwise specified)**|**= 25 °C (unless otherwise specified)**|
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**||**Unit**|**Note or test condition**|
|||**Min.**|**Max.**|||
|Collector emitter voltage|_V_CEO|–|4.5|V|Open base|
||||4||_T_A= -55 °C, open base|
|Collector emitter voltage|_V_CES||10||E-B short circuited|
|Collector base voltage|_V_CBO||10||Open emitter|
|Emitter base voltage|_V_EBO||1||Open collector|
|Base current|_I_B||8|mA|–|
|Collector current|_I_C||80|||
|Total power dissipation**_1)_**|_P_tot||250|mW|_T_S≤ 80 °C|
|Junction temperature|_T_J||150|°C|–|
|Storage temperature|_T_Stg|-55||||
_**Attention** :_ _**Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit.**_
> 1 _T_ S is the soldering point temperature. _T_ S is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 Revision 2.0
Revision 2.0 2019-01-25
**BFP540FESD Low profile robust silicon NPN RF bipolar transistor**
**==> picture [105 x 47] intentionally omitted <==**
## **Thermal characteristics**
## **2 Thermal characteristics**
## **Table 3 Thermal resistance**
**==> picture [512 x 372] intentionally omitted <==**
**----- Start of picture text -----**
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Junction - soldering point R thJS – 280 – K/W –
300
mW
200
150
100
50
0
0 30 60 90 °C 150
T S
TOT
P
**----- End of picture text -----**
**Figure 1 Total power dissipation** _**P**_ **tot = f(** _**T**_ **s)**
Datasheet
Revision 2.0 2019-01-25
4
**BFP540FESD Low profile robust silicon NPN RF bipolar transistor**
**==> picture [105 x 47] intentionally omitted <==**
## **Electrical characteristics**
## **3 Electrical characteristics**
## **3.1 DC characteristics**
|**Table 4**
**DC characteristics at****_T_A = 25 °C**|**Table 4**
**DC characteristics at****_T_A = 25 °C**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Collector emitter breakdown voltage|_V_(BR)CEO|4.5|5|–|V|_I_C= 1 mA,_I_B= 0,
open base|
|Collector emitter leakage current|_I_CES|–|–|10**_2)_**|μA|_V_CE= 10 V,_V_BE= 0,
E-B short circuited|
|Collector base leakage current|_I_CBO|||100**_2)_**|nA|_V_CB= 5 V,_I_E= 0,
open emitter|
|Emitter base leakage current|_I_EBO|||10**_2)_**|μA|_V_EB= 0.5 V,_I_C= 0,
open collector|
|DC current gain|_h_FE|50|110|170||_V_CE= 3.5 V,_I_C= 20 mA,
pulse measured|
## **3.2 General AC characteristics**
|**Table 5**
**General AC characteristics at****_T_A =**|**Table 5**
**General AC characteristics at****_T_A =**|**25 °C**|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note or test condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Transition frequency|_f_T|21|30|–|GHz|_V_CE= 4 V,_I_C= 50 mA,
_f_= 1 GHz|
|Collector base capacitance|_C_CB|–|0.16|0.26|pF|_V_CB= 2 V,_V_BE= 0,
_f_= 1 MHz,
emitter grounded|
|Collector emitter capacitance|_C_CE||0.4|–||_V_CE= 2 V,_V_BE= 0,
_f_= 1 MHz,
base grounded|
|Emitter base capacitance|_C_EB||0.55|||_V_EB= 0.5 V,_V_CB= 0,
_f_= 1 MHz,
collector grounded|
> 2 Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 5
Revision 2.0 2019-01-25
**BFP540FESD Low profile robust silicon NPN RF bipolar transistor**
**==> picture [105 x 47] intentionally omitted <==**
## **Electrical characteristics**
## **3.3 Frequency dependent AC characteristics**
Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, _T_ A = 25 °C.
|IN|||B
(Pin 1)
E
C
E
Top View
VB|B
(Pin 1)
E
C
E
Top View
VB|B
(Pin 1)
E
C
E
Top View
VB||VC|VC||OUT|
|---|---|---|---|---|---|---|---|---|---|---|
|||||||||Bias-T|||
||||||||||||
||||||||||||
|||Bias-T|||||||||
||||||||||||
||||||||||||
|**Figure 2**
**Testing circuit**|||||||||||
|**Table 6**
**AC characteristics,****_V_CE = 2 V,****_f_ = 1.8 GHz**|||||||||||
|**Parameter**||||**Symbol**||**Values**|||**Unit**|**Note or test condition**|
||||||**Min.**|**Typ.**|**Max.**||||
|Power gain
•
Maximum stable power gain
•
Transducer gain||||_G_ms
|_S_21|2|–
15.5|20
18|–||dB|_I_C= 20 mA|
|Noise figure
•
Minimum noise figure||||_NF_min|–|0.9|1.4|||_I_C= 5 mA|
|Linearity
•
3rd order intercept point at output
•
1 dB gain compression point at output||||_OIP_3
_OP_1dB||24.5
11|–||dBm|_I_C= 20 mA,_Z_S=_Z_L= 50 Ω|
## **AC characteristics,** _**V**_ **CE = 2 V,** _**f**_ **= 3 GHz**
||||||||
|---|---|---|---|---|---|---|
|**Table 7**
**AC characteristics,****_V_CE = 2 V,****_f_ = 3 GHz**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note or test condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Power gain
•
Maximum available power gain
•
Transducer gain|_G_ma
|_S_21|2|–|14.5
13|–|dB|_I_C= 20 mA|
|Noise figure
•
Minimum noise figure|_NF_min||1.3|||_I_C= 5 mA|
_Note: G_ ms _= IS_ 21 _/ S_ 12 _I for k < 1; G_ ma _= IS_ 21 _/ S_ 12 _I(k-(k_[2] _-1)_[1/2] _) for k > 1. In order to get the NF_ min _values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP_ 3 _value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz._
Datasheet
Revision 2.0 2019-01-25
6
**BFP540FESD Low profile robust silicon NPN RF bipolar transistor**
**4 Package information TSFP-4-1**
**==> picture [105 x 47] intentionally omitted <==**
## **Package information TSFP-4-1**
**==> picture [174 x 104] intentionally omitted <==**
## **Figure 3 Package outline**
**==> picture [174 x 127] intentionally omitted <==**
|**Figure 4**
**Foot print**|||
|---|---|---|
||||
|**Figure 5**
**Marking layout example**|||
||||
||||
||||
||||
|**Figure 6**
**Tape dimensions**|||
Datasheet
Revision 2.0 2019-01-25
7
**BFP540FESD Low profile robust silicon NPN RF bipolar transistor**
**==> picture [105 x 47] intentionally omitted <==**
## **Revision history**
## **Revision history**
|**Document**
**version**|**Date of**
**release**|**Description of changes**|
|---|---|---|
|Revision 2.0|2019-01-25|New datasheet layout.|
Datasheet
Revision 2.0 2019-01-25
8
## **Trademarks**
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**Edition 2019-01-25 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”) . **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding the **© 2019 Infineon Technologies AG** application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of **All Rights Reserved.** any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
**Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-pcg1525441545262** Infineon Technologies in customer’s applications.
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Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury
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