# Bipolar - RF Transistor, NPN, 2.5 V, 45 GHz, 120 mW, 50 mA, TSFP

![Product image](https://novapart.co/image/farnell:2781213/)

**URL**: https://novapart.co/products/BFP520FH6327XTSA1/bipolar-rf-transistor-npn-25-v-45-ghz-120-mw-50-ma
**SKU**: BFP520FH6327XTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar RF Transistors
**Price**: €0.1380
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.5V; Transition Frequency ft:45GHz; Power Dissipation Pd:120mW; DC Collector Current:50mA; DC Current Gain hFE:70hFE; RF

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 120mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 45GHz |
| Transistor Case Style | TSFP |
| Dc Current Gain Hfe Min | 70hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 50mA |
| Collector Emitter Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781213/)

**BFP520F** 

## **Low Noise Silicon Bipolar RF Transistor** 

- For highest gain and low noise amplifier 

- Outstanding Gms = 22.5 dB at 1.8 GHz 

**==> picture [63 x 26] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2<br>4<br>1<br>**----- End of picture text -----**<br>


- Minimum noise figure _NF_ min = 0.95 dB at 1.8 GHz 

- For oscillators up to 15 GHz 

- Transition frequency _f_ T = 45 GHz 

- Pb-free (RoHS compliant) and halogen-free thin small 

- flat package with visible leads 

- Qualification report according to AEC-Q101 available 

## **ESD** ( **E** lectro **s** tatic **d** ischarge) sensitive device, observe handling precaution! 

|**Type**|**Marking**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Package**|
|---|---|---|---|---|---|---|---|---|
|BFP520F|APs|1=B|2=E|3=C|4=E|-|-|TSFP-4|



**Maximum Ratings** at _T_ A = 25 °C, unless otherwise specified 

|**Parameter**|**Symbol**<br>ee|**Value**<br>ee|**Unit**|
|---|---|---|---|
|Collector-emitter voltage<br>_T_A= 25 °C<br>_T_A= -55 °C|_V_CEO|2.5<br>2.4|V|
|Collector-emitter voltage|_V_CES<br>ee|10<br>ee||
|Collector-base voltage|_V_CBO<br>es<br>ee|10<br>es<br>eee||
|Emitter-base voltage|_V_EBO<br>ee|1<br>eee||
|Collector current|_I_C<br>ee <br>es|50<br> eee<br>es|mA|
|Base current|_I_B|5||
|Total power dissipation1)<br>_T_S ≤98 °C|_P_tot<br>||120<br>||mW|
|Junction temperature|_T_J<br>es|150<br>es|°C|
|Storage temperature|_T_Stg<br>ee|-55 ... 150<br>ee||



> 1 _T_ S is measured on the emitter lead at the soldering point to pcb 

## **Thermal Resistance** 

|**Thermal Resistance**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Junction - soldering point1)|_R_thJS|430|K/W|



1 

2013-09-19 

**BFP520F** 

## **Electrical Characteristics** at _T_ A = 25 °C, unless otherwise specified 

|**Electrical Characteristics**at_T_A= 25 °C,unless|otherwise|specified|specified|specified||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**DC Characteristics**||||||
|Collector-emitter breakdown voltage<br>_I_C= 1 mA,_I_B= 0|_V_(BR)CEO|2.5|3|3.5|V|
|Collector-emitter cutoff current<br>_V_CE= 10 V,_V_BE= 0|_I_CES|-|-|10|µA|
|Collector-base cutoff current<br>_V_CB= 5 V,_I_E= 0|_I_CBO|-|-|200|mA|
|Emitter-base cutoff current<br>_V_EB= 1 V,_I_C= 0|_I_EBO|-|-|35|µA|
|DC current gain<br>_I_C= 20 mA,_V_CE= 2 V,pulse measured|_h_FE|70|110|170|-|



> 1For the definition of _R_ thJS please refer to Application Note AN077 (Thermal Resistance Calculation) 

2 

2013-09-19 

**BFP520F** 

|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**AC Characteristics**(verified by random sampling)||||||
|Transition frequency<br>_I_C= 30 mA,_V_CE= 2 V,_f_= 2 GHz|_f_T|32|45|-|GHz|
|Collector-base capacitance<br>_V_CB= 2 V,_f_= 1 MHz,_V_BE= 0 ,<br>emitter grounded|_C_cb|-|0.07|0.14|pF|
|Collector emitter capacitance<br>_V_CE= 2 V,_f_= 1 MHz,_V_BE= 0 ,<br>base grounded|_C_ce|-|0.25|-||
|Emitter-base capacitance<br>_V_EB= 0.5 V,_f_= 1 MHz,_V_CB= 0 ,<br>collector grounded|_C_eb|-|0.31|-||
|Minimum noise figure<br>_I_C= 2 mA,_V_CE= 2 V,_Z_S=_Z_Sopt,<br>_f_= 1.8 GHz|_NF_min|-|0.95|-|dB|
|Power gain, maximum stable1)<br>_I_C= 20 mA,_V_CE= 2 V,_Z_S=_Z_Sopt,_Z_L=_Z_Lopt,<br>_f_= 1.8 GHz|_G_ms|-|22.5|-|dB|
|Insertion power gain<br>_V_CE= 2 V,_I_C= 20 mA,_f_= 1.8 GHz,<br>_Z_S=_Z_L= 50Ω||_S_21|2|-|20.5|-||
|Third order intercept point at output<br>_V_CE= 2 V,_I_C= 20 mA,_f_= 1.8 GHz,<br>_Z_S=_Z_Sopt,_Z_L=_Z_Lopt|_IP3_|-|23.5|-|dBm|
|1dB compression point<br>_I_C= 20 mA,_V_CE= 2 V,_Z_S=_Z_Sopt,_Z_L=_Z_Lopt,<br>_f_= 1.8 GHz|_P_-1dB|-|10.5|-||



> 1 _G_ ms = |S21 / S12| 

3 

2013-09-19 

**BFP520F** 

## **Total power dissipation** _P_ tot = ƒ( _T_ S) 

**==> picture [230 x 269] intentionally omitted <==**

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130<br>mW<br>110<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 15 30 45 60 75 90 105 120 °C 150<br>T S<br>tot<br>P<br>**----- End of picture text -----**<br>


2013-09-19 

4 

**BFP520F** 

## **Package TSFP-4** 

2013-09-19 

5 

**BFP520F** 

## **Edition 2009-11-16** 

**Published by Infineon Technologies AG 81726 Munich, Germany** 

##  **2009 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

6 

2013-09-19 



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