BFP183E7764HTSA1

**BFP183** 

## **Low Noise Silicon Bipolar RF Transistor** 

- For low noise, high-gain broadband amplifiers at 

- collector currents from 2 mA to 30 mA 

- _f_ T = 8 GHz, _NF_ min = 0.9 dB at 900 MHz 

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- Pb-free (RoHS compliant) package 

- Qualification report according to AEC-Q101 available 

## **ESD** ( **E** lectro **s** tatic **d** ischarge) sensitive device, observe handling precaution! 

|**Maximum Ratings**at_T_A= 25 °C, unless otherwise specified|= 25 °C, unless otherwise specified|= 25 °C, unless otherwise specified||
|---|---|---|---|
|**Parameter**|**Symbol**<br>es<br>ee|**Value**<br>es<br>ee|**Unit**<br>es<br>ee|
|Collector-emitter voltage|_V_CEO<br>ee|12<br>ee|V<br>ee<br>es<br>ee<br>eee<br>ee|
|Collector-emitter voltage|_V_CES<br>ee<br>es<br>ee|20<br>ee<br>es<br>ee||
|Collector-base voltage|_V_CBO<br>ee<br>ee|20<br>ee<br>eee||
|Emitter-base voltage|_V_EBO<br>ee<br>ee<br>ee|2<br>ee<br>eee<br>ee||
|Collector current|_I_C<br>ee <br>ee<br>ee|65<br> eee<br>ee<br>ee|mA<br>eee<br>ee<br>ee|
|Base current|_I_B<br>ee<br>ee|5<br>ee<br>ee||
|Total power dissipation1)<br>_T_S ≤76 °C|_P_tot<br>ee<br>ee|250<br>ee<br>ee|mW<br>ee<br>ee|
|Junction temperature|_T_J<br>ee|150<br>ee|°C<br>ee<br>es|
|Storage temperature|_T_Stg<br>ee<br>es|-55 ... 150<br>ee<br>es||



- 1 _T_ S is measured on the collector lead at the soldering point to the pcb 

> 2For the definition of _R_ thJS please refer to Application Note AN077 (Thermal Resistance Calculation) 

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**BFP183** 

## **Electrical Characteristics** at _T_ A = 25 °C, unless otherwise specified 

|**Electrical Characteristics**at_T_A= 25 °C,unless|otherwise|specified|specified|specified||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**DC Characteristics**||||||
|Collector-emitter breakdown voltage<br>_I_C= 1 mA,_I_B= 0|_V_(BR)CEO|12|-|-|V|
|Collector-emitter cutoff current<br>_V_CE= 20 V,_V_BE= 0|_I_CES|-|-|100|µA|
|Collector-base cutoff current<br>_V_CB= 10 V,_I_E= 0|_I_CBO|-|-|100|nA|
|Emitter-base cutoff current<br>_V_EB= 1 V,_I_C= 0|_I_EBO|-|-|1|µA|
|DC current gain<br>_I_C= 15 mA,_V_CE= 8 V,pulse measured|_h_FE|70|100|140|-|



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|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**AC Characteristics**(verified by random sampling)||||||
|Transition frequency<br>_I_C= 25 mA,_V_CE= 8 V,_f_= 500 MHz|_f_T|6|8|-|GHz|
|Collector-base capacitance<br>_V_CB= 10 V,_f_= 1 MHz,_V_BE= 0 ,<br>emitter grounded|_C_cb|-|0.3|0.5|pF|
|Collector emitter capacitance<br>_V_CE= 10 V,_f_= 1 MHz,_V_BE= 0 ,<br>base grounded|_C_ce|-|0.27|-||
|Emitter-base capacitance<br>_V_EB= 0.5 V,_f_= 1 MHz,_V_CB= 0 ,<br>collector grounded|_C_eb|-|1.1|-||
|Minimum noise figure<br>_I_C= 5 mA,_V_CE= 8 V,_Z_S=_Z_Sopt,<br>_f_= 900 MHz<br>_f_= 1.8 GHz|_NF_min|-<br>-|0.9<br>1.4|-<br>-|dB|
|Power gain, maximum stable1)<br>_I_C= 15 mA,_V_CE= 8 V,_Z_S=_Z_Sopt,_Z_L=_Z_Lopt,<br>_f_= 900 MHz|_G_ms|-|22|-|dB|
|Power gain, maximum available1)<br>_I_C= 15 mA,_V_CE= 8 V,_Z_S=_Z_Sopt,_Z_L=_Z_Lopt,<br>_f_= 1.8 GHz|_G_ma|-|15.5|-|dB|
|Transducer gain<br>_I_C= 15 mA,_V_CE= 8 V,_Z_S=_Z_L= 50Ω,<br>_f_= 900 MHz<br>_f_= 1.8 GHz||_S_21e|2|-<br>-|17.5<br>11.5|-<br>-|dB|



> 1 _G_ ma = | _S_ 21e / _S_ 12e| (k-(k²-1)1/2), _G_ ms = | _S_ 21 / _S_ 12| 

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## **Total power dissipation** _P_ tot = ƒ( _T_ S) 

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300<br>mW<br>200<br>150<br>100<br>50<br>0<br>0 20 40 60 80 100 120 °C 150<br> T S<br>tot<br>P<br>**----- End of picture text -----**<br>


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**Package SOT143** 

**BFP183** 

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**BFP183** 

## **Edition 2009-11-16** 

**Published by Infineon Technologies AG 81726 Munich, Germany** 

##  **2009 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

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