# Bipolar - RF Transistor, NPN, 4 V, 46 GHz, 200 mW, 50 mA, SOT-343
**URL**: https://novapart.co/products/BF776H6327XTSA1/bipolar-rf-transistor-npn-4-v-46-ghz-200-mw-50-ma
**SKU**: BF776H6327XTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar RF Transistors
**Price**: €0.1570
**Stock**: 1000+
**Lead Time**: 190 days (indicative)
## Description
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4V; Transition Frequency ft:46GHz; Power Dissipation Pd:200mW; DC Collector Current:50mA; DC Current Gain hFE:180hFE; RF
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 200mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 46GHz |
| Transistor Case Style | SOT-343 |
| Dc Current Gain Hfe Min | 180hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 50mA |
| Collector Emitter Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2726094RL/)
**BF776**
## **High Performance NPN Bipolar RF Transistor**
- High performance low noise amplifier
- Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz
- For a wide range of non automotive applications
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3
2
4
1
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- such as WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB, UMTS/LTE and ISM bands
- Easy to use standard package with visible leads
- Pb-free (RoHS compliant) package
**ESD** ( **E** lectro **s** tatic **d** ischarge) sensitive device, observe handling precaution!
|**Maximum Ratings**at_T_A= 25 °C, unless otherwise specified|= 25 °C, unless otherwise specified|= 25 °C, unless otherwise specified||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Collector-emitter voltage
_T_A= 25 °C
_T_A= -55 °C|_V_CEO
S||4.0
3.5
S||V|
|Collector-emitter voltage|_V_CES
es|13
es||
|Collector-base voltage|_V_CBO
es
ee|13
es
eee||
|Emitter-base voltage|_V_EBO
ee|1.2
eee||
|Collector current|_I_C
ee
es|50
eee
es|mA|
|Base current|_I_B
es|3
es||
|Total power dissipation1)
_T_S ≤90°C|_P_tot
||200
||mW|
|Junction temperature|_T_J
es|150
es|°C|
|Ambient temperature|_T_A
a eee|-55 ... 150
eee||
|Storage temperature|_TS_tg
es|-55 ... 150
es||
> 1 _T_ S is measured on the emitter lead at the soldering point to the pcb
> 2For calculation of _R_ thJA please refer to Application Note Thermal Resistance
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**BF776**
## **Electrical Characteristics** at _T_ A = 25°C, unless otherwise specified
|**Electrical Characteristics**at_T_A= 25°C,unless o|therwise s|pecified|pecified|pecified||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**DC Characteristics**||||||
|Collector-emitter breakdown voltage
_I_C= 1 mA,_I_B= 0|_V_(BR)CEO|4|4.7|-|V|
|Collector-emitter cutoff current
_V_CE= 5 V,_V_BE= 0|_I_CES|-|1|-|nA|
|Collector-base cutoff current
_V_CB= 5 V,_I_E= 0|_I_CBO|-|1|-||
|Emitter-base cutoff current
_V_EB= 0.5 V,_I_C= 0|_I_EBO|-|10|-||
|DC current gain
_I_C= 30 mA,_V_CE= 3 V,pulse measured|_h_FE|-|180|-|-|
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**BF776**
|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified|
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**AC Characteristics**(verified by random sampling)||||||
|Transition frequency
_I_C= 30 mA,_V_CE= 3 V,_f_= 1 GHz|_f_T|-|46|-|GHz|
|Collector-base capacitance
_V_CB= 3 V,_f_= 1 MHz,_V_BE= 0 ,
emitter grounded|_C_cb|-|0.09|-|pF|
|Collector emitter capacitance
_V_CE= 3 V,_f_= 1 MHz,_V_BE= 0 ,
base grounded|_C_ce|-|0.25|-||
|Emitter-base capacitance
_V_EB= 0.5 V,_f_= 1 MHz,_V_CB= 0 ,
collector grounded|_C_eb|-|0.5|-||
|Noise figure
_I_C= 5 mA,_V_CE= 3 V,_f_= 1.8 GHz,_Z_S=_Z_Sopt
_I_C= 5 mA,_V_CE= 3 V,_f_= 6 GHz,_Z_S=_Z_Sopt|_F_|-
-|0.8
1.3|-
-|dB|
|Power gain, maximum stable1)
_I_C= 30 mA,_V_CE= 3 V,_Z_S=_Z_Sopt,
_Z_L=_Z_Lopt,_f_= 1.8 GHz|_G_ms|-|24|-|dB|
|Power gain, maximum available1)
_I_C= 30 mA,_V_CE= 3 V,_Z_S=_Z_Sopt,
_Z_L=_Z_Lopt,_f_= 6 GHz|_G_ma|-|12.5|-|dB|
|Transducer gain
_I_C= 30 mA,_V_CE= 3 V,_Z_S=_Z_L= 50Ω,
_f_= 1.8 GHz
_f_= 6 GHz||_S_21e|2|-
-|21.5
11|-
-|dB|
|Third order intercept point at output2)
_V_CE= 3 V,_I_C= 30 mA,_Z_S=_Z_L=50 Ω,_f_=1.8 GHz|_IP_3|-|28|-|dBm|
|1dB Compression point at output
_I_C= 30 mA,_V_CE= 3 V,_Z_S=_Z_L=50 Ω,_f_=1.8 GHz|_P_-1dB|-|13|-||
> 1 _G_ ma = | _S_ 21e / _S_ 12e| (k-(k²-1)1/2), _G_ ms = | _S_ 21e / _S_ 12e|
2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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**BF776**
## **SPICE Parameter**
For the SPICE model as well as for S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually starting your design.
The simulation data have been generated and verified using typical devices. The BF776 SPICE model reflects the typical DC- and RF-performance with high accuracy.
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**Package SOT343**
**BF776**
## Package Outline
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**----- Start of picture text -----**
0.9 ±0.1
2 [±0.2]
0.1 MAX.
1.3
0.1
A
4 3
0.15
1 2
0.3 [+0.1] -0.05 0.15 [+0.1] -0.05
4x 0.6 -0.05+0.1
0.1 M 0.2 M A
±0.1 ±0.1
2.1 0.1 MIN. 1.25
**----- End of picture text -----**
Foot Print
**==> picture [201 x 429] intentionally omitted <==**
**----- Start of picture text -----**
0.6
1.15
0.9
Manufacturer
2005, June
Date code (YM)
BGA420
Pin 1 Type code
4 0.2
Pin 1 2.15 1.1
0.8
1.6
8
2.3
**----- End of picture text -----**
## Marking Layout (Example)
## Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel
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**BF776**
## **Edition 2009-11-16**
**Published by Infineon Technologies AG 81726 Munich, Germany**
## **2009 Infineon Technologies AG All Rights Reserved.**
## **Legal Disclaimer**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## **Information**
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ().
## **Warnings**
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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## Links
- [View this product on Novapart](https://novapart.co/products/BF776H6327XTSA1/bipolar-rf-transistor-npn-4-v-46-ghz-200-mw-50-ma)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/bf776h6327xtsa1/rf-transistor-npn-4v-46ghz-sot/dp/2726094RL)
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