# Bipolar (BJT) Single Transistor, NPN, 300 V, 50 mA, 500 mW, SOT-80, Surface Mount

![Product image](https://novapart.co/image/farnell:1757915/)

**URL**: https://novapart.co/products/BF620,115/bipolar-bjt-single-transistor-npn-300-v-50-ma-500
**SKU**: BF620,115
**Manufacturer**: NEXPERIA
**Price**: €0.2920
**Stock**: 10+
**Lead Time**: 373 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:60MHz; Power Dissipation Pd:500mW; DC Collector Current:50mA; DC Current Gain hFE:50hFE; Transistor Ca

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 500mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 60MHz |
| Transistor Case Style | SOT-80 |
| Dc Current Gain Hfe Min | 50hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 50mA |
| Collector Emitter Voltage Max | 300V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1757915/)

## **DISCRETE SEMICONDUCTORS** 

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DATA SHEET<br>book, halfpage<br>M3D109<br>**----- End of picture text -----**<br>


## **BF620; BF622** NPN high-voltage transistors 

Supersedes data of 1999 Apr 21 

2004 Dec 14 

**Philips Semiconductors** 

## **NPN high-voltage transistors** 

## **BF620; BF622** 

## **FEATURES** 

- Low current (max. 50 mA) 

- High voltage (max. 300 V). 

## **APPLICATIONS** 

## **PINNING** 

|**PINNING**||
|---|---|
|**PIN**|**DESCRIPTION**|
|1|emitter|
|2|collector|
|3|base|



- Video output stages. 

## **DESCRIPTION** 

NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BF621 and BF623. 

## **MARKING** 

|**MARKING**||
|---|---|
|**TYPE NUMBER**|**MARKING CODE**|
|BF620|DC|
|BF622|DA|



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2<br>3<br>1<br>sym042<br>3 2 1<br>**----- End of picture text -----**<br>


Fig.1  Simplified outline (SOT89) and symbol. 

## **ORDERING INFORMATION** 

|**TYPE NUMBER**|**PACKAGE**|**PACKAGE**|**PACKAGE**|
|---|---|---|---|
||**NAME**|**DESCRIPTION**|**VERSION**|
|BF620|SC-62|plastic surface mounted package; collector pad for good heat<br>transfer; 3 leads|SOT89|
|BF622||||



2004 Dec 14 

2 

Philips Semiconductors 

## NPN high-voltage transistors 

## BF620; BF622 

## **LIMITING VALUES** 

In accordance with the Absolute Maximum Rating System (IEC 60134). 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|VCBO|collector-base voltage<br>BF620<br>BF622|open emitter|−<br>−|300<br>250|V<br>V|
|VCEO|collector-emitter voltage<br>BF620<br>BF622|open base|−<br>−|300<br>250|V<br>V|
|VEBO|emitter-base voltage|open collector|−|5|V|
|IC|collector current (DC)||−|50|mA|
|ICM|peak collector current||−|100|mA|
|IBM|peak base current||−|50|mA|
|Ptot|total power dissipation|Tamb≤25°C<br>note 1<br>note 2<br>note 3|−<br>−<br>−|0.5<br>0.8<br>1.1|W<br>W<br>W|
|Tstg|storage temperature||−65|+150|°C|
|Tj|junction temperature||−|150|°C|
|Tamb|ambient temperature||−65|+150|°C|



## **Notes** 

1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 

2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm[2] . 

3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm[2] . 

2004 Dec 14 

3 

Philips Semiconductors 

## NPN high-voltage transistors 

## BF620; BF622 

**==> picture [234 x 244] intentionally omitted <==**

**----- Start of picture text -----**<br>
006aaa238<br>1600<br>Ptot<br>(mW)<br>1200<br>(1)<br>(2)<br>800<br>(3)<br>400<br>0<br>−75 −25 25 75 125 175<br>Tamb (°C)<br>(1) FR4 PCB; 6 cm [2]  mounting pad for collector.<br>(2) FR4 PCB; 1 cm [2]  mounting pad for collector.<br>(3) FR4 PCB; standard footprint.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig.2  Power derating curves.<br>**----- End of picture text -----**<br>


2004 Dec 14 

4 

Philips Semiconductors 

## NPN high-voltage transistors 

## BF620; BF622 

## **THERMAL CHARACTERISTICS** 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|---|---|---|---|---|
|Rth(j-a)<br>t<br>|hermal resistance from junction to<br>ambient|in free air<br>note 1<br>note 2<br>note 3|250<br>156<br>113|K/W<br>K/W<br>K/W|
|Rth(j-s)<br>t<br>|hermal resistance from junction to<br>soldering point||30|K/W|



## **Notes** 

1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 

2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm[2] . 

3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm[2] . 

**==> picture [483 x 248] intentionally omitted <==**

**----- Start of picture text -----**<br>
006aaa235<br>10 [3]<br>Zth<br>(K/W) (1)<br>(2)<br>(3)<br>10 [2]<br>(4)<br>(5)<br>(6)<br>(7)<br>10<br>(8)<br>(9)<br>(10)<br>1<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]<br>tp (s)<br>Mounted on FR4 printed-circuit board; standard footprint.<br>(1) δ = 1. (3) δ = 0.5. (5) δ = 0.2. (7) δ = 0.05. (9) δ = 0.01.<br>(2) δ = 0.75. (4) δ = 0.33. (6) δ = 0.1. (8) δ = 0.02. (10) δ = 0.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig.3  Transient thermal impedance as a function of pulse time; typical values.<br>**----- End of picture text -----**<br>


2004 Dec 14 

5 

Philips Semiconductors 

## NPN high-voltage transistors 

## BF620; BF622 

**==> picture [483 x 247] intentionally omitted <==**

**----- Start of picture text -----**<br>
006aaa236<br>10 [3]<br>Zth<br>(K/W)<br>(1)<br>10 [2] (2)<br>(3)<br>(4)<br>(5)<br>(6)<br>10 (7)<br>(8)<br>(9)<br>(10)<br>1<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]<br>tp (s)<br>Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm [2] .<br>(1) δ = 1. (3) δ = 0.5. (5) δ = 0.2. (7) δ = 0.05. (9) δ = 0.01.<br>(2) δ = 0.75. (4) δ = 0.33. (6) δ = 0.1. (8) δ = 0.02. (10) δ = 0.<br>**----- End of picture text -----**<br>


Fig.4  Transient thermal impedance as a function of pulse time; typical values. 

**==> picture [483 x 248] intentionally omitted <==**

**----- Start of picture text -----**<br>
006aaa237<br>10 [3]<br>Zth<br>(K/W)<br>(1)<br>10 [2]<br>(2)<br>(3)<br>(4)<br>(5)<br>(6)<br>10<br>(7)<br>(8)<br>(9)<br>(10)<br>1<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]<br>tp (s)<br>Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm [2] .<br>(1) δ = 1. (3) δ = 0.5. (5) δ = 0.2. (7) δ = 0.05. (9) δ = 0.01.<br>(2) δ = 0.75. (4) δ = 0.33. (6) δ = 0.1. (8) δ = 0.02. (10) δ = 0.<br>**----- End of picture text -----**<br>


Fig.5  Transient thermal impedance as a function of pulse time; typical values. 

2004 Dec 14 

6 

Philips Semiconductors 

## NPN high-voltage transistors 

## BF620; BF622 

## **CHARACTERISTICS** 

Tamb = 25 ° 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|ICBO|collector-base cut-off current|IE= 0 A; VCB= 200 V|−|10|nA|
|||IE= 0 A; VCB= 200 V; Tj= 150°C|−|10|µA|
|IEBO|emitter-base cut-off current|IC= 0 A; VEB= 5 V|−|50|nA|
|hFE|DC current gain|IC= 25 mA; VCE= 20 V|50|−||
|VCEsat|collector-emitter saturation voltage|IC= 30 mA; IB= 5 mA|−|600|mV|
|Cre|feedback capacitance|IC= ic= 0 A; VCE= 30 V; f = 1 MHz|−|1.6|pF|
|fT|transition frequency|IC=−10 mA; VCE= 10 V; f = 100 MHz|60|−|MHz|



2004 Dec 14 

7 

Philips Semiconductors 

## NPN high-voltage transistors 

## BF620; BF622 

## **PACKAGE OUTLINE** 

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Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
D B<br>A<br>bp3<br>E<br>HE<br>Lp<br>1 2 3<br>bp2 c<br>w M bp1<br>e1<br>e<br>0 2 4 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w<br>1.6 0.48 0.53 1.8 0.44 4.6 2.6 4.25 1.2<br>mm 3.0 1.5 0.13<br>1.4 0.35 0.40 1.4 0.23 4.4 2.4 3.75 0.8<br>OUTLINE  REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  JEITA PROJECTION<br>99-09-13<br> SOT89 TO-243 SC-62<br>04-08-03<br>**----- End of picture text -----**<br>


2004 Dec 14 

8 

Philips Semiconductors 

## NPN high-voltage transistors 

## BF620; BF622 

## **DATA SHEET STATUS** 

|**LEVEL**|**DATA SHEET**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)(3)|**DEFINITION**|
|---|---|---|---|
|I|Objective data|Development|This data sheet contains data from the objective specifcation for product<br>development. Philips Semiconductors reserves the right to change the<br>specifcation in any manner without notice.|
|II|Preliminary data|Qualifcation|This data sheet contains data from the preliminary specifcation.<br>Supplementary data will be published at a later date. Philips<br>Semiconductors reserves the right to change the specifcation without<br>notice, in order to improve the design and supply the best possible<br>product.|
|III|Product data|Production|This data sheet contains data from the product specifcation. Philips<br>Semiconductors reserves the right to make changes at any time in order<br>to improve the design, manufacturing and supply. Relevant changes will<br>be communicated via a Customer Product/Process Change Notifcation<br>(CPCN).|



## **Notes** 

1. Please consult the most recently issued data sheet before initiating or completing a design. 

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 

## **DEFINITIONS** 

**Short-form specification**  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. 

**Limiting values definition**  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Application information**  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

## **DISCLAIMERS** 

**Life support applications**  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. 

**Right to make changes**  Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 

2004 Dec 14 

9 

## **Philips Semiconductors – a worldwide company** 

## **Contact information** 

For additional information please visit **http://www.semiconductors.philips.com** . Fax: **+31 40 27 24825** For sales offices addresses send e-mail to: **sales.addresses@www.semiconductors.philips.com** . 

© Koninklijke Philips Electronics N.V. 2004 

SCA76 

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 

**==> picture [214 x 95] intentionally omitted <==**

Printed in The Netherlands 

Date of release: 2004 Dec 14 Document order number: 9397 750 13867 

R75/04/pp10 



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- [Supplier page](https://es.farnell.com/nexperia/bf620-115/trans-npn-300v-0-05a-sot89/dp/1757915)
---

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