# JFET Transistor, JFET, -30 V, 13 mA, -8 V, TO-92, 3 Pin, 150 °C ![Product image](https://novapart.co/image/farnell:2453364/) **URL**: https://novapart.co/products/BF256B/jfet-transistor-30-v-13-ma-8-to-92-3-pin-150-c **SKU**: BF256B **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || JFETs **Price**: €0.0690 **Stock**: 1000+ **Lead Time**: 373 days (indicative) ## Description Breakdown Voltage Vbr:-30V; Zero Gate Voltage Drain Current Idss Min:6mA; Zero Gate Voltage Drain Current Idss Max:13mA; Gat; Available until stocks are exhausted Alternative available ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3 Pin | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-92 | | Operating Temperature Max | 150°C | | Gate Source Cutoff Voltage Max | -8V | | Gate Source Breakdown Voltage Max | -30V | | Zero Gate Voltage Drain Current Max | 13mA | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2453364/) **DATA SHEET www.onsemi.com** ## N-Channel JFET RF Amplifier ## BF256B ## **Features** This Device is Designed for VHF / UHF Amplifiers Sourced from Process 50 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant **==> picture [117 x 56] intentionally omitted <==** **----- Start of picture text -----**
1:Gate
1 2 3 2:Source
3:Drain
TO−92−3
CASE 135AN
**----- End of picture text -----**
## **ABSOLUTE MAXIMUM RATINGS** ## **MARKING DIAGRAM** Values are at TA = 25 ° C unless otherwise noted. |Values are at TA = 25|Values are at TA = 25A = 25= 25°C unless otherwise noted.||| |---|---|---|---| |**Symbol**|**Parameter**|**Value**|**Unit**| |VDG|Drain−Gate Voltage|30|V| |VGS|Gate−Source Voltage|−30|V| |IGF|Forward Gate Current|10|mA| |TJ, TSTG|Operating and Storage
Temperature Range|−55 to 150|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **==> picture [153 x 110] intentionally omitted <==** **----- Start of picture text -----**
ABF
256B
YWW
A = Assembly Site
BF256B = Specific Device Code
Y = Year of Production
WW = Work Week Number
**----- End of picture text -----**
## **THERMAL CHARACTERISTICS** ## **ORDERING INFORMATION** Values are at TA = 25 ° C unless otherwise noted. |Values are at TA = 25|Values are at TA = 25A = 25= 25°C unless otherwise noted.||| |---|---|---|---| |**Symbol**|**Parameter**|**Value**|**Unit**| |PD|Total Device Dissipation at TA= 25°C|350|mW| ||Derate Above 25°C|2.8|mW/°C| |**Device**|**Package**|**Shipping**| |---|---|---| |BF256B|TO−92−3|10,000 Bulk/Bag| **ELECTRICAL CHARACTERISTICS** Values are at TA = 25 ° C unless otherwise noted. |**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**Values are at TA = 25A = 25= 25°C unless otherwise noted.|C unless otherwise noted.|||| |---|---|---|---|---|---| |**Symbol**
~~a~~|**Parameter**|**Conditions**|**Min**|**Max**|**Unit**| |V(BR)GSS
~~a~~|Gate−Source Breakdown Voltage
|VDS= 0, IG= 1 A
|−30
|−
|V
| |VGS
~~OO~~|Gate−Source Voltage
~~OO~~|VDS= 15 V, ID= 200 A
~~OO~~|−0.5
~~OO~~|−7.5
~~OO~~|V
~~OO~~| |VGS(off)
~~a~~|Gate−Source Cut−Off Voltage|VDS= 15 V, ID= 10 nA|−0.5|−8.0|V| |IGSS
~~a~~|Gate Reverse Current|VGS= −20 V, VDS= 0|−|−5|nA| |IDSS
~~a~~|Zero−Gate Voltage Drain Current
|VDS= 15 V, VGS= 0
|6
|13
|mA
| |gfs
~~GC~~|Common Source Forward Transconductance
~~GC~~|VDS= 15 V, VGS= 0,f = 1 kHz
~~GC~~|4.5
~~GC~~|−
~~GC~~|mmhos
~~GC~~| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2003 **September, 2021 − Rev. 2** **BF256B/D** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **TO−92 3 4.825x4.76** CASE 135AN ISSUE O DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13880G** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: TO−92 3 4.825X4.76 PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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