# Bipolar (BJT) Single Transistor, Darlington, PNP, 100 V, 10 A, 70 W, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:1015774/)

**URL**: https://novapart.co/products/BDX34C/bipolar-bjt-single-transistor-darlington-pnp-100-v
**SKU**: BDX34C
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.4180
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 70W |
| Dc Current Gain Hfe | 750hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transistor Case Style | TO-220 |
| Dc Current Gain Hfe Min | 750hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 10A |
| Collector Emitter Voltage Max | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1015774/)

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## **BDX33B BDX33C BDX34B BDX34C** COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 

## **DESCRIPTION** 

The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BDX34B and BDX34C respectively. 

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3<br>2<br>1<br>TO-220<br>**----- End of picture text -----**<br>


## **INTERNAL  SCHEMATIC  DIAGRAM** 

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R1 Typ. = 10 KΩ          R2 Typ. = 150 Ω<br>**----- End of picture text -----**<br>


## **ABSOLUTE  MAXIMUM  RATINGS** 

|**Symbol**|**Parameter**||||**Unit**|
|---|---|---|---|---|---|
|||**NPN**|**BDX33B**|**BDX33C**||
|||**PNP**|**BDX34B**|**BDX34C**||
|VCBO|Collector-Base Voltage(IE= 0)||80|100|V|
|VCEO|Collector-Emitter Voltage(IB= 0)||80|100|V|
|IC|Collector Current||10||A|
|ICM|Collector Peak Current||15||A|
|IB|Base Current||0.25||A|
|Ptot|Total Dissipation at Tc ≤25 oC||70||W|
|Tstg|Storage Temperature||-65 to 150||oC|
|Tj|Max. OperatingJunction Temperature||150||oC|



For PNP types voltage and current values are negative. 

1/4 

October 1999 

**BDX33B BDX33C BDX34B BDX34C** 

## **THERMAL  DATA** 

Rthj-case Thermal  Resistance  Junction-case 1.78 oC/W 

## **ELECTRICAL  CHARACTERISTICS** (Tcase = 25[o] C unless otherwise specified) 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ICBO|Collector Cut-off Current<br>(IE= 0)<br>f<br>f<br><br>f<br>f|or**BDX33B/34B**VCB= 80 V<br>or**BDX33C/34C**VCB= 100V<br>Tcase= 100oC<br>or**BDX33B/34B**VCB= 80 V<br>or**BDX33C/34C**VCB= 100 V|||0.2<br>0.2<br>5<br>5|mA<br>mA<br>mA<br>mA|
|ICEO|Collector Cut-off Current<br>(IB= 0)<br>f<br>f<br><br>f<br>f|or**BDX33B/34B**VCE= 40 V<br>or**BDX33C/34C**VCE= 50V<br>Tcase= 100oC<br>or**BDX33B/34B**VCE= 40 V<br>or**BDX33C/34C**VCE= 50 V|||0.5<br>0.5<br>10<br>10|mA<br>mA<br>mA<br>mA|
|IEBO|Emitter Cut-off Current<br>(IC= 0)<br>|VEB= 5 V|||5|mA|
|VCEO(sus)∗|Collector-Emitter Sustaining<br>Voltage  (IB= 0)<br>I<br>|C=100 mA   for**BDX33B/34B**<br>for**BDX33C/34C**|80<br>100|||V<br>V|
|VCER(sus)∗|Collector-emitter Sustaining<br>Voltage(RBE=100Ω)<br>I<br>|C= 100 mA  for**BDX33B/34B**<br>for**BDX33C/34C**|80<br>100|||V<br>V|
|VCEV(sus)∗|Collector-emitter Sustaining<br>Voltage  (VBE=-1.5 V)<br>I<br>|C= 100 mA  for**BDX33B/34B**<br> for**BDX33C/34C**|80<br>100|||V<br>V|
|VCE(sat)∗|Collector-emitter Saturation<br>Voltage<br>I|C= 3 A                 IB= 6 mA|||2.5|V|
|VBE∗|Base-emitter Voltage<br>I|C= 3 A                 VCE= 3 V|||2.5|V|
|hFE∗|DC Current Gain<br>I|C= 3 A                 VCE= 3 V|750|||V|
|VF∗|Parallel-Diode Forward<br>Voltage<br>I|F= 8 A|||4|V|
|hfe|Small Signal Current Gain<br>I|C= 1 A   VCE= 5 V    f = 1MHz|100||||



∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. 

## Safe Operating Area 

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**BDX33B BDX33C BDX34B BDX34C** 

## **TO-220 MECHANICAL DATA** 

|**DIM.**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.40||4.60|0.173||0.181|
|C|1.23||1.32|0.048||0.051|
|D|2.40||2.72|0.094||0.107|
|D1||1.27|||0.050||
|E|0.49||0.70|0.019||0.027|
|F|0.61||0.88|0.024||0.034|
|F1|1.14||1.70|0.044||0.067|
|F2|1.14||1.70|0.044||0.067|
|G|4.95||5.15|0.194||0.203|
|G1|2.4||2.7|0.094||0.106|
|H2|10.0||10.40|0.393||0.409|
|L2||16.4|||0.645||
|L4|13.0||14.0|0.511||0.551|
|L5|2.65||2.95|0.104||0.116|
|L6|15.25||15.75|0.600||0.620|
|L7|6.2||6.6|0.244||0.260|
|L9|3.5||3.93|0.137||0.154|
|DIA.|3.75||3.85|0.147||0.151|



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**BDX33B BDX33C BDX34B BDX34C** 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 

- © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES 

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**http://www.st.com** 

. 

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